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FR2983640B1 - Matrice de detection compacte a conditions de polarisation ameliorees - Google Patents

Matrice de detection compacte a conditions de polarisation ameliorees

Info

Publication number
FR2983640B1
FR2983640B1 FR1103692A FR1103692A FR2983640B1 FR 2983640 B1 FR2983640 B1 FR 2983640B1 FR 1103692 A FR1103692 A FR 1103692A FR 1103692 A FR1103692 A FR 1103692A FR 2983640 B1 FR2983640 B1 FR 2983640B1
Authority
FR
France
Prior art keywords
detection matrix
polarization conditions
improved polarization
compact detection
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1103692A
Other languages
English (en)
Other versions
FR2983640A1 (fr
Inventor
Michel Zecri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lynred SAS
Original Assignee
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS filed Critical Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority to FR1103692A priority Critical patent/FR2983640B1/fr
Priority to US14/361,617 priority patent/US9389119B2/en
Priority to EP12813904.5A priority patent/EP2786413A1/fr
Priority to PCT/FR2012/000498 priority patent/WO2013079826A1/fr
Publication of FR2983640A1 publication Critical patent/FR2983640A1/fr
Priority to IL232876A priority patent/IL232876B/en
Application granted granted Critical
Publication of FR2983640B1 publication Critical patent/FR2983640B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0429—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using polarisation elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H04N25/69—SSIS comprising testing or correcting structures for circuits other than pixel cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/448—Array [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
FR1103692A 2011-12-02 2011-12-02 Matrice de detection compacte a conditions de polarisation ameliorees Expired - Fee Related FR2983640B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1103692A FR2983640B1 (fr) 2011-12-02 2011-12-02 Matrice de detection compacte a conditions de polarisation ameliorees
US14/361,617 US9389119B2 (en) 2011-12-02 2012-11-30 Compact detection array having improved polarization conditions
EP12813904.5A EP2786413A1 (fr) 2011-12-02 2012-11-30 Matrice de détection compacte à conditions de polarisation améliorées
PCT/FR2012/000498 WO2013079826A1 (fr) 2011-12-02 2012-11-30 Matrice de détection compacte à conditions de polarisation améliorées
IL232876A IL232876B (en) 2011-12-02 2014-05-29 Compact detection array having improved polarization conditions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1103692A FR2983640B1 (fr) 2011-12-02 2011-12-02 Matrice de detection compacte a conditions de polarisation ameliorees

Publications (2)

Publication Number Publication Date
FR2983640A1 FR2983640A1 (fr) 2013-06-07
FR2983640B1 true FR2983640B1 (fr) 2014-06-20

Family

ID=47557351

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1103692A Expired - Fee Related FR2983640B1 (fr) 2011-12-02 2011-12-02 Matrice de detection compacte a conditions de polarisation ameliorees

Country Status (5)

Country Link
US (1) US9389119B2 (fr)
EP (1) EP2786413A1 (fr)
FR (1) FR2983640B1 (fr)
IL (1) IL232876B (fr)
WO (1) WO2013079826A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9937124B2 (en) 2014-09-11 2018-04-10 International Business Machines Corporation Microchip substance delivery devices having low-power electromechanical release mechanisms
US9734371B2 (en) * 2015-03-31 2017-08-15 International Business Machines Corporation Hybrid tag for radio frequency identification system
US9755701B2 (en) * 2015-03-31 2017-09-05 International Business Machines Corporation Hybrid tag for radio frequency identification system
US10881788B2 (en) 2015-10-30 2021-01-05 International Business Machines Corporation Delivery device including reactive material for programmable discrete delivery of a substance

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2754107B1 (fr) 1996-10-01 1998-10-30 Commissariat Energie Atomique Detecteur de rayonnement photonique de grandes dimensions
US6504572B2 (en) * 1997-11-05 2003-01-07 Stmicroelectronics, Inc. Circuit for detecting leaky access switches in CMOS imager pixels
JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
US6803555B1 (en) * 2001-09-07 2004-10-12 Indigo Systems Corporation Two-stage auto-zero amplifier circuit for electro-optical arrays
US6593562B1 (en) * 2001-10-04 2003-07-15 Indigo Systems Corporation Electro-optical sensor arrays with reduced sensitivity to defects
US7170143B2 (en) * 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
EP1884978B1 (fr) 2006-08-03 2011-10-19 Creepservice S.à.r.l. Procédé pour la revêtement des substrats avec des couches de carbone de type diamant
JP5150283B2 (ja) * 2008-01-30 2013-02-20 浜松ホトニクス株式会社 固体撮像装置
JP2013089869A (ja) * 2011-10-20 2013-05-13 Canon Inc 検出装置及び検出システム

Also Published As

Publication number Publication date
US20140332663A1 (en) 2014-11-13
WO2013079826A1 (fr) 2013-06-06
EP2786413A1 (fr) 2014-10-08
IL232876B (en) 2018-02-28
IL232876A0 (en) 2014-07-31
FR2983640A1 (fr) 2013-06-07
US9389119B2 (en) 2016-07-12

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Legal Events

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Year of fee payment: 5

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