FR2978291B1 - Dispositif semi-conducteur d'emission d'electrons dans le vide - Google Patents

Dispositif semi-conducteur d'emission d'electrons dans le vide

Info

Publication number: FR2978291B1
Authority: FR; France
Prior art keywords: empty; semiconductor device; electron emission; electron; emission
Prior art date: 2011-07-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR1102286A

Other languages

English (en)

Other versions

FR2978291A1 (fr

Inventor

Jean Claude Jacquet

Raphael Aubry

Marie Antoinette Poisson

Sylvain Delage

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Thales SA

Alcatel Lucent SAS

Original Assignee

Thales SA

Alcatel Lucent SAS

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-07-22

Filing date

2011-07-22

Publication date

2014-02-21

2011-07-22 Application filed by Thales SA, Alcatel Lucent SAS filed Critical Thales SA

2011-07-22 Priority to FR1102286A priority Critical patent/FR2978291B1/fr

2012-07-20 Priority to EP12735920.6A priority patent/EP2735016A1/fr

2012-07-20 Priority to US14/234,328 priority patent/US9305734B2/en

2012-07-20 Priority to PCT/EP2012/064346 priority patent/WO2013014109A1/fr

2012-07-20 Priority to JP2014520682A priority patent/JP6272223B2/ja

2013-01-25 Publication of FR2978291A1 publication Critical patent/FR2978291A1/fr

2014-02-21 Application granted granted Critical

2014-02-21 Publication of FR2978291B1 publication Critical patent/FR2978291B1/fr

Status Expired - Fee Related legal-status Critical Current

2031-07-22 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/04—Cathodes

FR1102286A 2011-07-22 2011-07-22 Dispositif semi-conducteur d'emission d'electrons dans le vide Expired - Fee Related FR2978291B1 (fr)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
FR1102286A FR2978291B1 (fr)	2011-07-22	2011-07-22	Dispositif semi-conducteur d'emission d'electrons dans le vide
EP12735920.6A EP2735016A1 (fr)	2011-07-22	2012-07-20	Dispositif semi-conducteur d'emission d'electrons dans le vide
US14/234,328 US9305734B2 (en)	2011-07-22	2012-07-20	Semiconductor device for electron emission in a vacuum
PCT/EP2012/064346 WO2013014109A1 (fr)	2011-07-22	2012-07-20	Dispositif semi-conducteur d'emission d'electrons dans le vide
JP2014520682A JP6272223B2 (ja)	2011-07-22	2012-07-20	真空中での電子放出のための半導体素子

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR1102286A FR2978291B1 (fr)	2011-07-22	2011-07-22	Dispositif semi-conducteur d'emission d'electrons dans le vide

Publications (2)

Publication Number	Publication Date
FR2978291A1 FR2978291A1 (fr)	2013-01-25
FR2978291B1 true FR2978291B1 (fr)	2014-02-21

Family

ID=46516792

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1102286A Expired - Fee Related FR2978291B1 (fr)	2011-07-22	2011-07-22	Dispositif semi-conducteur d'emission d'electrons dans le vide

Country Status (5)

Country	Link
US (1)	US9305734B2 (fr)
EP (1)	EP2735016A1 (fr)
JP (1)	JP6272223B2 (fr)
FR (1)	FR2978291B1 (fr)
WO (1)	WO2013014109A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US10615599B2 (en)	2018-07-12	2020-04-07	John Bennett	Efficient low-voltage grid for a cathode
US10566168B1 (en)	2018-08-10	2020-02-18	John Bennett	Low voltage electron transparent pellicle

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07111866B2 (ja) *	1986-08-12	1995-11-29	キヤノン株式会社	固体電子ビ−ム発生装置
US5077597A (en) *	1990-08-17	1991-12-31	North Carolina State University	Microelectronic electron emitter
JPH06345736A (ja)	1993-06-14	1994-12-20	Tokuyama Soda Co Ltd	ウレタン化合物を製造する方法
FR2854984B1 (fr) *	2003-05-16	2005-07-01	Thales Sa	Dispositif semi-conducteur d'emission d'electrons dans le vide

2011
- 2011-07-22 FR FR1102286A patent/FR2978291B1/fr not_active Expired - Fee Related
2012
- 2012-07-20 JP JP2014520682A patent/JP6272223B2/ja not_active Expired - Fee Related
- 2012-07-20 EP EP12735920.6A patent/EP2735016A1/fr not_active Withdrawn
- 2012-07-20 US US14/234,328 patent/US9305734B2/en not_active Expired - Fee Related
- 2012-07-20 WO PCT/EP2012/064346 patent/WO2013014109A1/fr not_active Ceased

Also Published As

Publication number	Publication date
JP2014523099A (ja)	2014-09-08
US9305734B2 (en)	2016-04-05
US20140326943A1 (en)	2014-11-06
WO2013014109A1 (fr)	2013-01-31
FR2978291A1 (fr)	2013-01-25
EP2735016A1 (fr)	2014-05-28
JP6272223B2 (ja)	2018-01-31

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Legal Events

Date	Code	Title	Description
2016-06-28	PLFP	Fee payment	Year of fee payment: 6
2017-06-28	PLFP	Fee payment	Year of fee payment: 7
2018-06-28	PLFP	Fee payment	Year of fee payment: 8
2020-06-25	PLFP	Fee payment	Year of fee payment: 10
2021-06-24	PLFP	Fee payment	Year of fee payment: 11
2022-06-23	PLFP	Fee payment	Year of fee payment: 12
2024-04-05	ST	Notification of lapse	Effective date: 20240305