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FR2975223B1 - Traitement thermique par injection d'un gaz caloporteur. - Google Patents

Traitement thermique par injection d'un gaz caloporteur.

Info

Publication number
FR2975223B1
FR2975223B1 FR1154015A FR1154015A FR2975223B1 FR 2975223 B1 FR2975223 B1 FR 2975223B1 FR 1154015 A FR1154015 A FR 1154015A FR 1154015 A FR1154015 A FR 1154015A FR 2975223 B1 FR2975223 B1 FR 2975223B1
Authority
FR
France
Prior art keywords
caloporant
injection
gas
thermal treatment
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1154015A
Other languages
English (en)
Other versions
FR2975223A1 (fr
Inventor
Gregory Savidand
Daniel Lincot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Original Assignee
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1154015A priority Critical patent/FR2975223B1/fr
Application filed by Electricite de France SA, Centre National de la Recherche Scientifique CNRS filed Critical Electricite de France SA
Priority to AU2012252173A priority patent/AU2012252173B2/en
Priority to JP2014509791A priority patent/JP5795430B2/ja
Priority to EP12725101.5A priority patent/EP2707896A1/fr
Priority to PCT/FR2012/050994 priority patent/WO2012153046A1/fr
Priority to CA2834209A priority patent/CA2834209A1/fr
Priority to CN201280023001.7A priority patent/CN103703550A/zh
Priority to US14/115,664 priority patent/US20140080249A1/en
Priority to KR1020137032641A priority patent/KR20140035929A/ko
Publication of FR2975223A1 publication Critical patent/FR2975223A1/fr
Application granted granted Critical
Publication of FR2975223B1 publication Critical patent/FR2975223B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemical Vapour Deposition (AREA)
FR1154015A 2011-05-10 2011-05-10 Traitement thermique par injection d'un gaz caloporteur. Active FR2975223B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1154015A FR2975223B1 (fr) 2011-05-10 2011-05-10 Traitement thermique par injection d'un gaz caloporteur.
JP2014509791A JP5795430B2 (ja) 2011-05-10 2012-05-03 熱伝導ガスの噴射による熱処理
EP12725101.5A EP2707896A1 (fr) 2011-05-10 2012-05-03 Traitement thermique par injection d'un gaz caloporteur.
PCT/FR2012/050994 WO2012153046A1 (fr) 2011-05-10 2012-05-03 Traitement thermique par injection d'un gaz caloporteur.
AU2012252173A AU2012252173B2 (en) 2011-05-10 2012-05-03 Heat treatment by injection of a heat-transfer gas
CA2834209A CA2834209A1 (fr) 2011-05-10 2012-05-03 Traitement thermique par injection d'un gaz caloporteur
CN201280023001.7A CN103703550A (zh) 2011-05-10 2012-05-03 籍助于喷射传热气体的热处理
US14/115,664 US20140080249A1 (en) 2011-05-10 2012-05-03 Heat treatment by injection of a heat-transfer gas
KR1020137032641A KR20140035929A (ko) 2011-05-10 2012-05-03 열전달가스의 주입에 의한 열처리

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1154015A FR2975223B1 (fr) 2011-05-10 2011-05-10 Traitement thermique par injection d'un gaz caloporteur.

Publications (2)

Publication Number Publication Date
FR2975223A1 FR2975223A1 (fr) 2012-11-16
FR2975223B1 true FR2975223B1 (fr) 2016-12-23

Family

ID=46201724

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1154015A Active FR2975223B1 (fr) 2011-05-10 2011-05-10 Traitement thermique par injection d'un gaz caloporteur.

Country Status (9)

Country Link
US (1) US20140080249A1 (fr)
EP (1) EP2707896A1 (fr)
JP (1) JP5795430B2 (fr)
KR (1) KR20140035929A (fr)
CN (1) CN103703550A (fr)
AU (1) AU2012252173B2 (fr)
CA (1) CA2834209A1 (fr)
FR (1) FR2975223B1 (fr)
WO (1) WO2012153046A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3004466B1 (fr) 2013-04-10 2015-05-15 Electricite De France Procede et dispositif d'electro-depot en geometrie cylindrique
JP2017216397A (ja) * 2016-06-01 2017-12-07 株式会社アルバック アニール処理装置およびアニール処理方法
CN107222165A (zh) * 2017-07-06 2017-09-29 北京铂阳顶荣光伏科技有限公司 具有加热装置的路面发电系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4638148A (en) * 1983-09-21 1987-01-20 Robertshaw Controls Company Control system and control device for controlling a heating unit and method of making the same
EP0181830B1 (fr) * 1984-11-08 1991-06-12 Mitsubishi Jukogyo Kabushiki Kaisha Procédé et dispositif pour chauffer un ruban métallique dans un four de recuit continu
JPH0288713A (ja) * 1988-03-21 1990-03-28 Union Carbide Corp 複数帯域プロセスにおける流れバイアス制御方法および装置
US5361587A (en) * 1993-05-25 1994-11-08 Paul Georgeades Vapor-compression-cycle refrigeration system having a thermoelectric condenser
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
GB0029281D0 (en) * 2000-11-30 2001-01-17 Boc Group Plc Quenching Method & Apparatus
SE521206C2 (sv) * 2002-02-20 2003-10-14 Flow Holdings Sagl Förfarande för kylning av en ugnskammare för varmisostatisk pressning och en anordning härför
KR20050085704A (ko) * 2002-12-17 2005-08-29 이 아이 듀폰 디 네모아 앤드 캄파니 반응 챔버 플라스마 반응기 시스템으로 증발-응축 방법을사용하는 나노입자의 제조 방법
US20070169810A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
JP4652120B2 (ja) * 2004-05-21 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の製造装置、およびパターン形成方法
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
JP2007269589A (ja) * 2006-03-31 2007-10-18 Nagaoka Univ Of Technology 硫化物薄膜の作製方法
US8066863B2 (en) * 2006-12-07 2011-11-29 Solopower, Inc. Electrodeposition technique and apparatus to form selenium containing layers
US8093493B2 (en) * 2007-04-30 2012-01-10 Solyndra Llc Volume compensation within a photovoltaic device
EP2232576A2 (fr) * 2007-12-06 2010-09-29 Craig Leidholm Procédés et dispositifs de traitement d'une couche de précurseur dans un environnement de groupe via
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WO2011066205A1 (fr) * 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company Procédé aqueux de production de nanoparticules de chalcogénures de cuivre cristallines, nanoparticules ainsi produites et encres et substrats revêtus contenant ces nanoparticules

Also Published As

Publication number Publication date
AU2012252173B2 (en) 2014-12-18
CN103703550A (zh) 2014-04-02
KR20140035929A (ko) 2014-03-24
FR2975223A1 (fr) 2012-11-16
WO2012153046A1 (fr) 2012-11-15
EP2707896A1 (fr) 2014-03-19
JP5795430B2 (ja) 2015-10-14
AU2012252173A1 (en) 2013-11-14
CA2834209A1 (fr) 2012-11-15
JP2014519701A (ja) 2014-08-14
AU2012252173A2 (en) 2014-06-05
US20140080249A1 (en) 2014-03-20

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