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FR2955204B1 - Cellule memoire dram disposant d'un injecteur bipolaire vertical - Google Patents

Cellule memoire dram disposant d'un injecteur bipolaire vertical

Info

Publication number
FR2955204B1
FR2955204B1 FR1050241A FR1050241A FR2955204B1 FR 2955204 B1 FR2955204 B1 FR 2955204B1 FR 1050241 A FR1050241 A FR 1050241A FR 1050241 A FR1050241 A FR 1050241A FR 2955204 B1 FR2955204 B1 FR 2955204B1
Authority
FR
France
Prior art keywords
memory cell
dram memory
vertical bipolar
injector
bipolar injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1050241A
Other languages
English (en)
Other versions
FR2955204A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1050241A priority Critical patent/FR2955204B1/fr
Priority to EP10187682A priority patent/EP2346077A1/fr
Priority to SG2010077832A priority patent/SG173247A1/en
Priority to TW99136090A priority patent/TWI470771B/zh
Priority to CN201010521914.4A priority patent/CN102130128B/zh
Priority to JP2010242316A priority patent/JP5420517B2/ja
Priority to KR1020100106017A priority patent/KR101135826B1/ko
Priority to US12/942,754 priority patent/US8305803B2/en
Publication of FR2955204A1 publication Critical patent/FR2955204A1/fr
Application granted granted Critical
Publication of FR2955204B1 publication Critical patent/FR2955204B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
FR1050241A 2010-01-14 2010-01-14 Cellule memoire dram disposant d'un injecteur bipolaire vertical Active FR2955204B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1050241A FR2955204B1 (fr) 2010-01-14 2010-01-14 Cellule memoire dram disposant d'un injecteur bipolaire vertical
EP10187682A EP2346077A1 (fr) 2010-01-14 2010-10-15 Cellule mémoire DRAM disposant d'un injecteur bipolaire vertical et son procédé de contrôle
TW99136090A TWI470771B (zh) 2010-01-14 2010-10-22 具有一垂直雙載子注射器之動態隨機存取記憶體胞元
SG2010077832A SG173247A1 (en) 2010-01-14 2010-10-22 Dram memory cell having a vertical bipolar injector
CN201010521914.4A CN102130128B (zh) 2010-01-14 2010-10-25 具有垂直双极注入器的dram存储器单元
JP2010242316A JP5420517B2 (ja) 2010-01-14 2010-10-28 縦型バイポーラインジェクタを有するｄｒａｍメモリセル
KR1020100106017A KR101135826B1 (ko) 2010-01-14 2010-10-28 수직 바이폴라 인젝터를 갖는 ｄｒａｍ 메모리 셀
US12/942,754 US8305803B2 (en) 2010-01-14 2010-11-09 DRAM memory cell having a vertical bipolar injector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1050241A FR2955204B1 (fr) 2010-01-14 2010-01-14 Cellule memoire dram disposant d'un injecteur bipolaire vertical

Publications (2)

Publication Number Publication Date
FR2955204A1 FR2955204A1 (fr) 2011-07-15
FR2955204B1 true FR2955204B1 (fr) 2012-07-20

Family

ID=42289816

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1050241A Active FR2955204B1 (fr) 2010-01-14 2010-01-14 Cellule memoire dram disposant d'un injecteur bipolaire vertical

Country Status (8)

Country Link
US (1) US8305803B2 (fr)
EP (1) EP2346077A1 (fr)
JP (1) JP5420517B2 (fr)
KR (1) KR101135826B1 (fr)
CN (1) CN102130128B (fr)
FR (1) FR2955204B1 (fr)
SG (1) SG173247A1 (fr)
TW (1) TWI470771B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
FR2955200B1 (fr) * 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
KR102084954B1 (ko) 2013-05-02 2020-03-05 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9281022B2 (en) 2013-07-10 2016-03-08 Zeno Semiconductor, Inc. Systems and methods for reducing standby power in floating body memory devices
US9548119B2 (en) 2014-01-15 2017-01-17 Zeno Semiconductor, Inc Memory device comprising an electrically floating body transistor
US9331097B2 (en) 2014-03-03 2016-05-03 International Business Machines Corporation High speed bipolar junction transistor for high voltage applications
TWI646653B (zh) * 2017-12-28 2019-01-01 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體

Family Cites Families (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
KR100213602B1 (ko) * 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US5028810A (en) * 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
JPH04345064A (ja) 1991-05-22 1992-12-01 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2717740B2 (ja) * 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
EP0564204A3 (en) * 1992-03-30 1994-09-28 Mitsubishi Electric Corp Semiconductor device
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5306530A (en) * 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP3488730B2 (ja) * 1993-11-05 2004-01-19 株式会社ルネサステクノロジ 半導体集積回路装置
JP3367776B2 (ja) * 1993-12-27 2003-01-20 株式会社東芝 半導体装置
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JPH08255846A (ja) 1995-03-17 1996-10-01 Nippondenso Co Ltd 半導体装置及びその製造方法
JP3288554B2 (ja) * 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
JPH0982814A (ja) * 1995-07-10 1997-03-28 Denso Corp 半導体集積回路装置及びその製造方法
US6787844B2 (en) * 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JP3265178B2 (ja) 1996-02-20 2002-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JPH10125064A (ja) 1996-10-14 1998-05-15 Toshiba Corp 記憶装置
JPH10208484A (ja) * 1997-01-29 1998-08-07 Mitsubishi Electric Corp 半導体記憶装置のデータ読出回路及び半導体記憶装置
US5889293A (en) * 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
JP3120389B2 (ja) * 1998-04-16 2000-12-25 日本電気株式会社 半導体装置
JP3699823B2 (ja) * 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
FR2779869B1 (fr) 1998-06-15 2003-05-16 Commissariat Energie Atomique Circuit integre de type soi a capacite de decouplage, et procede de realisation d'un tel circuit
US6826730B2 (en) * 1998-12-15 2004-11-30 Texas Instruments Incorporated System and method for controlling current in an integrated circuit
JP3456913B2 (ja) 1998-12-25 2003-10-14 株式会社東芝 半導体装置
US6372600B1 (en) * 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
US6476462B2 (en) * 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6417697B2 (en) * 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6300218B1 (en) * 2000-05-08 2001-10-09 International Business Machines Corporation Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
US6350653B1 (en) 2000-10-12 2002-02-26 International Business Machines Corporation Embedded DRAM on silicon-on-insulator substrate
JP2002164544A (ja) * 2000-11-28 2002-06-07 Sony Corp 半導体装置
US6614190B2 (en) * 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP3982218B2 (ja) * 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6611023B1 (en) * 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US6498057B1 (en) * 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
EP1357603A3 (fr) 2002-04-18 2004-01-14 Innovative Silicon SA Dispositif semiconducteur
US6838723B2 (en) * 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7710771B2 (en) * 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP2004179506A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp Ｓｏｉ構造を有する半導体基板及びその製造方法及び半導体装置
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
JP2004303499A (ja) 2003-03-31 2004-10-28 Hitachi High-Technologies Corp イオン注入装置およびイオン注入方法
JP4077381B2 (ja) * 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US6965143B2 (en) * 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
JP2005158952A (ja) * 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
US7109532B1 (en) * 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
JP4342970B2 (ja) * 2004-02-02 2009-10-14 株式会社東芝 半導体メモリ装置及びその製造方法
US20050255666A1 (en) * 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
US7112997B1 (en) * 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4795653B2 (ja) * 2004-06-15 2011-10-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7196921B2 (en) * 2004-07-19 2007-03-27 Silicon Storage Technology, Inc. High-speed and low-power differential non-volatile content addressable memory cell and array
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7560361B2 (en) 2004-08-12 2009-07-14 International Business Machines Corporation Method of forming gate stack for semiconductor electronic device
JP2006073627A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体集積装置
KR100663359B1 (ko) * 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
US20060267064A1 (en) * 2005-05-31 2006-11-30 Infineon Technologies Ag Semiconductor memory device
US7274618B2 (en) * 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
EP1739738A3 (fr) * 2005-06-30 2009-04-01 STMicroelectronics (Crolles 2) SAS Cellule mémoire à un transistor MOS à corps isolé à effet mémoire renforcé
JP4967264B2 (ja) * 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
US7314794B2 (en) * 2005-08-08 2008-01-01 International Business Machines Corporation Low-cost high-performance planar back-gate CMOS
JP4413841B2 (ja) * 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
JP5054919B2 (ja) * 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100735613B1 (ko) * 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
US7304903B2 (en) * 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
JP4373986B2 (ja) * 2006-02-16 2009-11-25 株式会社東芝 半導体記憶装置
JP4762036B2 (ja) * 2006-04-14 2011-08-31 株式会社東芝 半導体装置
CN101432976A (zh) * 2006-04-24 2009-05-13 松下电器产业株式会社 接收装置、使用该接收装置的电子设备以及接收方法
US7494902B2 (en) * 2006-06-23 2009-02-24 Interuniversitair Microelektronica Centrum Vzw (Imec) Method of fabricating a strained multi-gate transistor
KR100843055B1 (ko) * 2006-08-17 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
US7560344B2 (en) * 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
JP2008130670A (ja) * 2006-11-17 2008-06-05 Seiko Epson Corp 半導体装置、論理回路および電子機器
JP5057430B2 (ja) * 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
JP4869088B2 (ja) * 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
JP5019436B2 (ja) * 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5594927B2 (ja) * 2007-04-11 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
FR2915024A1 (fr) * 2007-04-12 2008-10-17 St Microelectronics Crolles 2 Procede de fabrication permettant l'homogeneisation de l'environnement de transistors et dispositif associe
JP2008263133A (ja) * 2007-04-13 2008-10-30 Toshiba Microelectronics Corp 半導体記憶装置およびその駆動方法
US7729149B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
EP2015362A1 (fr) * 2007-06-04 2009-01-14 STMicroelectronics (Crolles 2) SAS Matrice à semi-conducteurs et procédé de fabrication correspondant
US7449922B1 (en) * 2007-06-15 2008-11-11 Arm Limited Sensing circuitry and method of detecting a change in voltage on at least one input line
US7759714B2 (en) * 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
FR2918823B1 (fr) 2007-07-13 2009-10-16 Ecole Centrale De Lyon Etablis Cellule logique reconfigurable a base de transistors mosfet double grille
FR2919112A1 (fr) * 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
JP5035345B2 (ja) 2007-08-30 2012-09-26 富士通セミコンダクター株式会社 イオン注入装置、基板クランプ機構、及びイオン注入方法
JP2009059931A (ja) * 2007-08-31 2009-03-19 Toshiba Corp 不揮発性半導体記憶装置
KR100884344B1 (ko) * 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
JP5222520B2 (ja) 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20090101940A1 (en) * 2007-10-19 2009-04-23 Barrows Corey K Dual gate fet structures for flexible gate array design methodologies
DE102007052097B4 (de) * 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
FR2925223B1 (fr) 2007-12-18 2010-02-19 Soitec Silicon On Insulator Procede d'assemblage avec marques enterrees
US7593265B2 (en) 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
WO2009104060A1 (fr) 2008-02-20 2009-08-27 S.O.I.Tec Silicon On Insulator Technologies Oxydation après dissolution à l'oxyde
US7808039B2 (en) * 2008-04-09 2010-10-05 International Business Machines Corporation SOI transistor with merged lateral bipolar transistor
JP6053250B2 (ja) * 2008-06-12 2016-12-27 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
WO2010007478A1 (fr) 2008-06-13 2010-01-21 Yale University Dispositifs à semi-conducteurs à oxyde de métal complémentaire améliorés
US8120110B2 (en) * 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
US8012814B2 (en) * 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
KR101623958B1 (ko) 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101522400B1 (ko) * 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자

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EP2346077A1 (fr) 2011-07-20
TWI470771B (zh) 2015-01-21
US20110170343A1 (en) 2011-07-14
FR2955204A1 (fr) 2011-07-15
SG173247A1 (en) 2011-08-29
TW201126699A (en) 2011-08-01
CN102130128B (zh) 2014-01-08
US8305803B2 (en) 2012-11-06
KR20110083470A (ko) 2011-07-20
KR101135826B1 (ko) 2012-04-16
CN102130128A (zh) 2011-07-20
JP5420517B2 (ja) 2014-02-19

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