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FR2802340B1 - Structure comportant des cellules photovoltaiques et procede de realisation - Google Patents

Structure comportant des cellules photovoltaiques et procede de realisation

Info

Publication number
FR2802340B1
FR2802340B1 FR9915667A FR9915667A FR2802340B1 FR 2802340 B1 FR2802340 B1 FR 2802340B1 FR 9915667 A FR9915667 A FR 9915667A FR 9915667 A FR9915667 A FR 9915667A FR 2802340 B1 FR2802340 B1 FR 2802340B1
Authority
FR
France
Prior art keywords
producing
same
photovoltaic cells
photovoltaic
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9915667A
Other languages
English (en)
Other versions
FR2802340A1 (fr
Inventor
Claude Jaussaud
Michel Bruel
Bernard Aspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9915667A priority Critical patent/FR2802340B1/fr
Priority to JP2001545376A priority patent/JP2003517217A/ja
Priority to EP00993461A priority patent/EP1238435A1/fr
Priority to US10/149,316 priority patent/US20030047289A1/en
Priority to PCT/FR2000/003482 priority patent/WO2001045178A1/fr
Publication of FR2802340A1 publication Critical patent/FR2802340A1/fr
Application granted granted Critical
Publication of FR2802340B1 publication Critical patent/FR2802340B1/fr
Priority to US11/191,290 priority patent/US7368030B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1132—Using vacuum directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
FR9915667A 1999-12-13 1999-12-13 Structure comportant des cellules photovoltaiques et procede de realisation Expired - Fee Related FR2802340B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9915667A FR2802340B1 (fr) 1999-12-13 1999-12-13 Structure comportant des cellules photovoltaiques et procede de realisation
JP2001545376A JP2003517217A (ja) 1999-12-13 2000-12-12 薄膜構造を製造するための中間吸引支持部材およびその利用
EP00993461A EP1238435A1 (fr) 1999-12-13 2000-12-12 Support intermediaire aspirant et son utilisation pour realiser une structure en couche mince
US10/149,316 US20030047289A1 (en) 1999-12-13 2000-12-12 Intermediate suction support and its utilisation or producing a thin film structure
PCT/FR2000/003482 WO2001045178A1 (fr) 1999-12-13 2000-12-12 Support intermediaire aspirant et son utilisation pour realiser une structure en couche mince
US11/191,290 US7368030B2 (en) 1999-12-13 2005-07-27 Intermediate suction support and its utilisation for producing a thin film structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9915667A FR2802340B1 (fr) 1999-12-13 1999-12-13 Structure comportant des cellules photovoltaiques et procede de realisation

Publications (2)

Publication Number Publication Date
FR2802340A1 FR2802340A1 (fr) 2001-06-15
FR2802340B1 true FR2802340B1 (fr) 2003-09-05

Family

ID=9553163

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915667A Expired - Fee Related FR2802340B1 (fr) 1999-12-13 1999-12-13 Structure comportant des cellules photovoltaiques et procede de realisation

Country Status (5)

Country Link
US (2) US20030047289A1 (fr)
EP (1) EP1238435A1 (fr)
JP (1) JP2003517217A (fr)
FR (1) FR2802340B1 (fr)
WO (1) WO2001045178A1 (fr)

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JP2003017723A (ja) * 2001-06-29 2003-01-17 Shin Etsu Handotai Co Ltd 半導体薄膜の製造方法及び太陽電池の製造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US20100203730A1 (en) * 2009-02-09 2010-08-12 Emcore Solar Power, Inc. Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
SG182989A1 (en) * 2007-07-03 2012-08-30 Microlink Devices Inc Methods for fabricating thin film iii-v compound solar cell
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
KR20120108229A (ko) * 2011-03-23 2012-10-05 삼성디스플레이 주식회사 레이저 가공용 워크 테이블
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
US9481566B2 (en) 2012-07-31 2016-11-01 Soitec Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
KR102187752B1 (ko) * 2013-05-07 2020-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 박리 장치
US10978332B2 (en) * 2016-10-05 2021-04-13 Prilit Optronics, Inc. Vacuum suction apparatus
US10170893B1 (en) 2017-08-09 2019-01-01 Waymo Llc Vacuum fixture
US11351677B2 (en) * 2020-06-25 2022-06-07 Oxygen Development LLC Multi-pan insertion tool

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GB1526933A (en) * 1974-09-13 1978-10-04 Johnson Matthey Co Ltd Vacuum head for handling transfers
US4521995A (en) * 1980-05-23 1985-06-11 Disco Co., Ltd. Wafer attracting and fixing device
JPS60103651U (ja) * 1983-12-19 1985-07-15 シチズン時計株式会社 真空吸着台
JPS63210148A (ja) * 1987-02-26 1988-08-31 Nikko Rika Kk 真空チヤツク用プラスチツクス焼結体
JPH0744135B2 (ja) * 1989-08-28 1995-05-15 株式会社東芝 半導体基板の接着方法及び接着装置
US5141212A (en) * 1991-04-08 1992-08-25 Ekstrom Carlson & Co. Vacuum chuck with foam workpiece-supporting surface
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH0851143A (ja) * 1992-07-20 1996-02-20 Nikon Corp 基板保持装置
JPH07110455B2 (ja) * 1992-10-27 1995-11-29 住友電気工業株式会社 ウェハ固定装置
JPH06268051A (ja) * 1993-03-10 1994-09-22 Mitsubishi Electric Corp ウエハ剥し装置
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US5695600A (en) * 1994-10-03 1997-12-09 Goin; Bobby Gene Vacuum table for decal weeding
DE4446546A1 (de) * 1994-12-24 1996-06-27 Philips Patentverwaltung Vakuumhaltevorrichtung
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
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EP0797258B1 (fr) * 1996-03-18 2011-07-20 Sony Corporation Méthode de fabrication de semi-conducteurs à couche mince, cellules solaires et diodes électroluminescentes
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
JP3628108B2 (ja) * 1996-06-10 2005-03-09 株式会社イオン工学研究所 太陽電池の製造方法
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Also Published As

Publication number Publication date
JP2003517217A (ja) 2003-05-20
US20050270867A1 (en) 2005-12-08
WO2001045178A1 (fr) 2001-06-21
US7368030B2 (en) 2008-05-06
FR2802340A1 (fr) 2001-06-15
EP1238435A1 (fr) 2002-09-11
US20030047289A1 (en) 2003-03-13

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090831