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FR2892426B1 - Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication - Google Patents

Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Info

Publication number
FR2892426B1
FR2892426B1 FR0510940A FR0510940A FR2892426B1 FR 2892426 B1 FR2892426 B1 FR 2892426B1 FR 0510940 A FR0510940 A FR 0510940A FR 0510940 A FR0510940 A FR 0510940A FR 2892426 B1 FR2892426 B1 FR 2892426B1
Authority
FR
France
Prior art keywords
manufacturing
crystalline materials
silicon tape
same
manufacturing same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0510940A
Other languages
English (en)
Other versions
FR2892426A1 (fr
Inventor
Roland Einhaus
Francois Lissalde
Hubert Lauvray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apollon Solar SAS
Cyberstar
Original Assignee
Apollon Solar SAS
Cyberstar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0510940A priority Critical patent/FR2892426B1/fr
Application filed by Apollon Solar SAS, Cyberstar filed Critical Apollon Solar SAS
Priority to JP2008537131A priority patent/JP2009513469A/ja
Priority to PCT/FR2006/002349 priority patent/WO2007048904A1/fr
Priority to EP06820238A priority patent/EP1941553A1/fr
Priority to CA002626063A priority patent/CA2626063A1/fr
Priority to US11/992,754 priority patent/US20090139445A1/en
Priority to CNA2006800404668A priority patent/CN101300686A/zh
Publication of FR2892426A1 publication Critical patent/FR2892426A1/fr
Application granted granted Critical
Publication of FR2892426B1 publication Critical patent/FR2892426B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
FR0510940A 2005-10-26 2005-10-26 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication Expired - Fee Related FR2892426B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0510940A FR2892426B1 (fr) 2005-10-26 2005-10-26 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
PCT/FR2006/002349 WO2007048904A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
EP06820238A EP1941553A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
CA002626063A CA2626063A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
JP2008537131A JP2009513469A (ja) 2005-10-26 2006-10-19 シリコンまたは他の結晶性物質のリボンを製造する装置および方法
US11/992,754 US20090139445A1 (en) 2005-10-26 2006-10-19 Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication
CNA2006800404668A CN101300686A (zh) 2005-10-26 2006-10-19 用于制造硅或其他晶体材料的带的装置及制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0510940A FR2892426B1 (fr) 2005-10-26 2005-10-26 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2892426A1 FR2892426A1 (fr) 2007-04-27
FR2892426B1 true FR2892426B1 (fr) 2008-01-11

Family

ID=36685772

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0510940A Expired - Fee Related FR2892426B1 (fr) 2005-10-26 2005-10-26 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Country Status (7)

Country Link
US (1) US20090139445A1 (fr)
EP (1) EP1941553A1 (fr)
JP (1) JP2009513469A (fr)
CN (1) CN101300686A (fr)
CA (1) CA2626063A1 (fr)
FR (1) FR2892426B1 (fr)
WO (1) WO2007048904A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
DE102009015236B4 (de) * 2009-04-01 2015-03-05 H.C. Starck Gmbh Tiegel und seine Verwendung
US20110168081A1 (en) * 2010-01-12 2011-07-14 Tao Li Apparatus and Method for Continuous Casting of Monocrystalline Silicon Ribbon
NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
KR101281033B1 (ko) * 2011-05-19 2013-07-09 한국에너지기술연구원 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법
US20120329203A1 (en) * 2011-06-22 2012-12-27 Liang-Tung Chang Method for Forming Silicon Thin Film
KR101483693B1 (ko) * 2012-04-05 2015-01-19 한국에너지기술연구원 실리콘 기판 제조 장치
KR101406705B1 (ko) 2012-04-05 2014-06-12 한국에너지기술연구원 실리콘 기판 제조 장치
FR3081856B1 (fr) * 2018-06-05 2020-11-27 Inst Polytechnique Grenoble Dispositif de production de silicium fondu

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
US4251570A (en) * 1979-11-19 1981-02-17 Honeywell Inc. Cold substrate growth technique for silicon-on-ceramic
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
JP3992469B2 (ja) * 2001-09-21 2007-10-17 独立行政法人科学技術振興機構 酸化物系共晶体のバルクの製造装置と製造方法
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication

Also Published As

Publication number Publication date
EP1941553A1 (fr) 2008-07-09
JP2009513469A (ja) 2009-04-02
WO2007048904A8 (fr) 2008-06-19
CA2626063A1 (fr) 2007-05-03
US20090139445A1 (en) 2009-06-04
WO2007048904A1 (fr) 2007-05-03
FR2892426A1 (fr) 2007-04-27
CN101300686A (zh) 2008-11-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110630