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FR2890258B1 - Dispositif et procede pour amplifier des signaux rf impulsionnels - Google Patents

Dispositif et procede pour amplifier des signaux rf impulsionnels

Info

Publication number
FR2890258B1
FR2890258B1 FR0508876A FR0508876A FR2890258B1 FR 2890258 B1 FR2890258 B1 FR 2890258B1 FR 0508876 A FR0508876 A FR 0508876A FR 0508876 A FR0508876 A FR 0508876A FR 2890258 B1 FR2890258 B1 FR 2890258B1
Authority
FR
France
Prior art keywords
impulse
amplifying
signals
amplifying impulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0508876A
Other languages
English (en)
Other versions
FR2890258A1 (fr
Inventor
Alain Letemplier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0508876A priority Critical patent/FR2890258B1/fr
Priority to PCT/EP2006/065837 priority patent/WO2007025995A1/fr
Priority to CNA2006800402357A priority patent/CN101297476A/zh
Priority to EP06793081A priority patent/EP1938451A1/fr
Priority to US12/065,318 priority patent/US8044714B2/en
Priority to JP2008528519A priority patent/JP2009506696A/ja
Publication of FR2890258A1 publication Critical patent/FR2890258A1/fr
Application granted granted Critical
Publication of FR2890258B1 publication Critical patent/FR2890258B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H03F1/025—Stepped control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
FR0508876A 2005-08-30 2005-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels Expired - Lifetime FR2890258B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0508876A FR2890258B1 (fr) 2005-08-30 2005-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels
PCT/EP2006/065837 WO2007025995A1 (fr) 2005-08-30 2006-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels
CNA2006800402357A CN101297476A (zh) 2005-08-30 2006-08-30 用于放大脉冲射频信号的装置和方法
EP06793081A EP1938451A1 (fr) 2005-08-30 2006-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels
US12/065,318 US8044714B2 (en) 2005-08-30 2006-08-30 Device and method for amplifying pulsed RF signals
JP2008528519A JP2009506696A (ja) 2005-08-30 2006-08-30 パルスｒｆ信号を増幅するための装置および方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0508876A FR2890258B1 (fr) 2005-08-30 2005-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels

Publications (2)

Publication Number Publication Date
FR2890258A1 FR2890258A1 (fr) 2007-03-02
FR2890258B1 true FR2890258B1 (fr) 2007-10-12

Family

ID=36173732

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0508876A Expired - Lifetime FR2890258B1 (fr) 2005-08-30 2005-08-30 Dispositif et procede pour amplifier des signaux rf impulsionnels

Country Status (6)

Country Link
US (1) US8044714B2 (fr)
EP (1) EP1938451A1 (fr)
JP (1) JP2009506696A (fr)
CN (1) CN101297476A (fr)
FR (1) FR2890258B1 (fr)
WO (1) WO2007025995A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8995691B2 (en) 2008-07-14 2015-03-31 Audera Acoustics Inc. Audio amplifier
US7701308B1 (en) * 2008-11-10 2010-04-20 Raytheon Company Radio frequency modulator
FR3060915B1 (fr) * 2016-12-15 2019-01-25 Thales Controle du spectre d'une emission rf impulsionnelle par mise en forme des impulsions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037914U (ja) * 1983-08-19 1985-03-15 三菱電機株式会社 パルス増幅装置
JPH0795657B2 (ja) * 1987-09-09 1995-10-11 日産自動車株式会社 保護機能内蔵型ｍｏｓｆｅｔ
JPH02268008A (ja) * 1989-04-07 1990-11-01 Toyo Commun Equip Co Ltd 高周波増幅器
US5155492A (en) * 1991-05-29 1992-10-13 Westinghouse Electric Corp. Dual mode active aperture
US5892403A (en) * 1997-03-18 1999-04-06 Telefonaktiebolaget Lm Ericsson Power interface circuit for a TDMA transmitter
JP3777040B2 (ja) * 1998-01-20 2006-05-24 三菱電機株式会社 増幅器
US6107880A (en) * 1998-08-06 2000-08-22 Motorola, Inc. Method and apparatus for increasing the linearity of the phase and gain of a power amplifier circuit
US6362690B1 (en) * 2000-04-19 2002-03-26 Ophir Rf, Inc. System and method for closed loop VSWR correction and tuning in RF power amplifiers
KR100494757B1 (ko) * 2001-09-04 2005-06-14 신덴겐코교 가부시키가이샤 스위칭 증폭 장치
US6573796B2 (en) 2001-09-24 2003-06-03 Infineon Technologies Ag Automatic LDMOS biasing with long term hot carrier compensation
JP2003243948A (ja) * 2002-02-15 2003-08-29 Toshiba Corp マイクロ波電力増幅器
DE60311681T2 (de) * 2002-11-15 2007-11-22 Matsushita Electric Industrial Co., Ltd., Kadoma Leistungsverstärkungsvorrichtung
SE0302681D0 (sv) * 2003-10-09 2003-10-09 Bang & Olufsen Icepower As Method for pulse area modulation
JP4707319B2 (ja) * 2003-11-19 2011-06-22 株式会社東芝 パルス電力増幅器
JP2005175561A (ja) * 2003-12-08 2005-06-30 Renesas Technology Corp 高周波電力増幅回路用電源回路および電源用半導体集積回路並びに電源用電子部品
US7177370B2 (en) * 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation

Also Published As

Publication number Publication date
US8044714B2 (en) 2011-10-25
WO2007025995A1 (fr) 2007-03-08
CN101297476A (zh) 2008-10-29
EP1938451A1 (fr) 2008-07-02
US20090195314A1 (en) 2009-08-06
FR2890258A1 (fr) 2007-03-02
JP2009506696A (ja) 2009-02-12

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