[go: up one dir, main page]

FR2871281B1 - Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee - Google Patents

Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee

Info

Publication number
FR2871281B1
FR2871281B1 FR0403434A FR0403434A FR2871281B1 FR 2871281 B1 FR2871281 B1 FR 2871281B1 FR 0403434 A FR0403434 A FR 0403434A FR 0403434 A FR0403434 A FR 0403434A FR 2871281 B1 FR2871281 B1 FR 2871281B1
Authority
FR
France
Prior art keywords
board
volatile memory
dual power
feeding dual
feeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0403434A
Other languages
English (en)
Other versions
FR2871281A1 (fr
Inventor
Jean Michel Daga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to FR0403434A priority Critical patent/FR2871281B1/fr
Priority to US11/061,799 priority patent/US7120061B2/en
Priority to DE602005012080T priority patent/DE602005012080D1/de
Priority to CNA2005800101251A priority patent/CN1961379A/zh
Priority to EP05729910A priority patent/EP1747559B1/fr
Priority to PCT/US2005/009865 priority patent/WO2005096796A2/fr
Priority to TW094110507A priority patent/TWI373767B/zh
Publication of FR2871281A1 publication Critical patent/FR2871281A1/fr
Priority to US11/539,567 priority patent/US7450429B2/en
Application granted granted Critical
Publication of FR2871281B1 publication Critical patent/FR2871281B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR0403434A 2004-04-01 2004-04-01 Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee Expired - Fee Related FR2871281B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0403434A FR2871281B1 (fr) 2004-04-01 2004-04-01 Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee
US11/061,799 US7120061B2 (en) 2004-04-01 2005-02-18 Method and apparatus for a dual power supply to embedded non-volatile memory
CNA2005800101251A CN1961379A (zh) 2004-04-01 2005-03-24 用于嵌入式非易失性存储器的双电源供电的方法和设备
EP05729910A EP1747559B1 (fr) 2004-04-01 2005-03-24 Procede et appareil pour la distribution d'une double alimentation electrique a une memoire non volatile integree
DE602005012080T DE602005012080D1 (de) 2004-04-01 2005-03-24 Verfahren und vorrichtung für eine doppelte stromversorgung für eingebetteten, nicht-flüchtigen speicher
PCT/US2005/009865 WO2005096796A2 (fr) 2004-04-01 2005-03-24 Procede et appareil pour la distribution d'une double alimentation electrique a une memoire non volatile integree
TW094110507A TWI373767B (en) 2004-04-01 2005-04-01 Embedded non-volatile memory and method of driving the same
US11/539,567 US7450429B2 (en) 2004-04-01 2006-10-06 Method and apparatus for a dual power supply to embedded non-volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0403434A FR2871281B1 (fr) 2004-04-01 2004-04-01 Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee

Publications (2)

Publication Number Publication Date
FR2871281A1 FR2871281A1 (fr) 2005-12-09
FR2871281B1 true FR2871281B1 (fr) 2008-06-13

Family

ID=35054103

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0403434A Expired - Fee Related FR2871281B1 (fr) 2004-04-01 2004-04-01 Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee

Country Status (5)

Country Link
US (1) US7120061B2 (fr)
CN (1) CN1961379A (fr)
DE (1) DE602005012080D1 (fr)
FR (1) FR2871281B1 (fr)
TW (1) TWI373767B (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1747559B1 (fr) * 2004-04-01 2008-12-31 Atmel Corporation Procede et appareil pour la distribution d'une double alimentation electrique a une memoire non volatile integree
US7355905B2 (en) * 2005-07-01 2008-04-08 P.A. Semi, Inc. Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
US7352609B2 (en) * 2005-08-15 2008-04-01 International Business Machines Corporation Voltage controlled static random access memory
US7466582B2 (en) * 2005-08-15 2008-12-16 International Business Machines Corporation Voltage controlled static random access memory
US7554843B1 (en) * 2005-11-04 2009-06-30 Alta Analog, Inc. Serial bus incorporating high voltage programming signals
US7681106B2 (en) * 2006-03-29 2010-03-16 Freescale Semiconductor, Inc. Error correction device and methods thereof
US7675806B2 (en) * 2006-05-17 2010-03-09 Freescale Semiconductor, Inc. Low voltage memory device and method thereof
US7365585B2 (en) * 2006-08-09 2008-04-29 Atmel Corporation Apparatus and method for charge pump slew rate control
US7834662B2 (en) * 2006-12-13 2010-11-16 Apple Inc. Level shifter with embedded logic and low minimum voltage
US7652504B2 (en) * 2006-12-13 2010-01-26 Apple Inc. Low latency, power-down safe level shifter
US7427890B2 (en) * 2006-12-29 2008-09-23 Atmel Corporation Charge pump regulator with multiple control options
US7656740B2 (en) 2007-02-05 2010-02-02 Micron Technology, Inc. Wordline voltage transfer apparatus, systems, and methods
CN101617371B (zh) * 2007-02-16 2014-03-26 莫塞德技术公司 具有多个外部电源的非易失性半导体存储器
US7639540B2 (en) * 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
US7715267B2 (en) * 2007-07-18 2010-05-11 Macronix International Co., Ltd. Driving method and driving circuit and low power memory using the same
US8102728B2 (en) * 2009-04-07 2012-01-24 Apple Inc. Cache optimizations using multiple threshold voltage transistors
US8004922B2 (en) * 2009-06-05 2011-08-23 Nxp B.V. Power island with independent power characteristics for memory and logic
US7995410B2 (en) 2009-06-26 2011-08-09 Apple Inc. Leakage and NBTI reduction technique for memory
US8605534B2 (en) * 2009-09-09 2013-12-10 Marvell World Trade Ltd. Circuits, architectures, apparatuses, systems, algorithms, and methods for memory with multiple power supplies and/or multiple low power modes
US8867278B2 (en) * 2011-02-28 2014-10-21 Samsung Electronics Co., Ltd. Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
US8553488B2 (en) 2011-06-10 2013-10-08 Apple Inc. Performing stuck-at testing using multiple isolation circuits
KR101874408B1 (ko) 2011-11-09 2018-07-05 삼성전자주식회사 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템
US9665144B2 (en) * 2011-12-21 2017-05-30 Intel Corporation Methods and systems for energy efficiency and energy conservation including entry and exit latency reduction for low power states
US9142266B2 (en) * 2013-11-19 2015-09-22 Arm Limited Memory circuitry using write assist voltage boost
KR20160079051A (ko) * 2013-12-27 2016-07-05 인텔 코포레이션 이중 전압 비대칭 메모리 셀
JP6495024B2 (ja) * 2015-01-29 2019-04-03 ルネサスエレクトロニクス株式会社 半導体装置
US9666253B2 (en) * 2015-09-18 2017-05-30 Taiwan Semiconductor Manufacturing Company Ltd. Dual rail memory, memory macro and associated hybrid power supply method
US10163470B2 (en) * 2015-09-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Dual rail memory, memory macro and associated hybrid power supply method
CN106935268B (zh) * 2015-12-31 2021-12-17 紫光同芯微电子有限公司 一种非易失性存储器双电源管理电路
TWI608485B (zh) * 2016-06-07 2017-12-11 來揚科技股份有限公司 電阻式記憶體的讀寫控制裝置
KR102392665B1 (ko) * 2017-11-29 2022-04-29 삼성전자주식회사 메모리 장치, 이를 포함하는 시스템 온 칩 및 메모리 장치의 동작 방법
US11056155B1 (en) 2018-06-20 2021-07-06 Adesto Technologies Corporation Nonvolatile memory devices, systems and methods with switching charge pump architectures
CN112967741B (zh) * 2021-02-06 2023-09-08 江南大学 一种面向存算阵列的高速高压字线驱动电路
US12237007B2 (en) 2021-07-09 2025-02-25 Stmicroelectronics International N.V. Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12176025B2 (en) 2021-07-09 2024-12-24 Stmicroelectronics International N.V. Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12087356B2 (en) 2021-07-09 2024-09-10 Stmicroelectronics International N.V. Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US12354644B2 (en) 2021-07-09 2025-07-08 Stmicroelectronics International N.V. Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US11984151B2 (en) 2021-07-09 2024-05-14 Stmicroelectronics International N.V. Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
US11875854B2 (en) * 2022-03-31 2024-01-16 Macronix International Co., Ltd. Memory device and word line driver thereof
KR20240112465A (ko) * 2023-01-12 2024-07-19 에스케이하이닉스 주식회사 전력 공급의 효율을 개선한 스토리지 시스템 및 반도체 패키지

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
US5222040A (en) 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
JPH06236694A (ja) 1991-05-07 1994-08-23 Intel Corp 高電圧レベル変換回路
US5274278A (en) 1991-12-31 1993-12-28 Intel Corporation High-speed tri-level decoder with dual-voltage isolation
JP2870328B2 (ja) 1992-11-12 1999-03-17 日本電気株式会社 不揮発性半導体記憶装置
US5399928A (en) 1993-05-28 1995-03-21 Macronix International Co., Ltd. Negative voltage generator for flash EPROM design
DE69427025T2 (de) 1994-08-31 2001-09-27 Stmicroelectronics S.R.L., Agrate Brianza Doppelquellenspannungsversorgungsschaltung
US5483486A (en) * 1994-10-19 1996-01-09 Intel Corporation Charge pump circuit for providing multiple output voltages for flash memory
TW423162B (en) 1997-02-27 2001-02-21 Toshiba Corp Power voltage supplying circuit and semiconductor memory including the same
KR100290283B1 (ko) * 1998-10-30 2001-05-15 윤종용 불휘발성 반도체 메모리 장치 및 그의 워드 라인 구동 방법
JP2001067886A (ja) * 1999-08-26 2001-03-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US6201747B1 (en) 1999-09-30 2001-03-13 Advanced Micro Devices, Inc. Method and apparatus for measuring subthreshold current in a memory array
US6550028B1 (en) * 1999-10-19 2003-04-15 Advanced Micro Devices, Inc. Array VT mode implementation for a simultaneous operation flash memory device
KR100734637B1 (ko) 2000-04-14 2007-07-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스, 메모리 셀 및 메모리 셀 구조물과 그 제어 방법
JP2002261239A (ja) * 2001-02-28 2002-09-13 Sharp Corp 不揮発性半導体メモリ装置の昇圧回路
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6822899B1 (en) * 2002-12-23 2004-11-23 Cypress Semiconductor Corporation Method of protecting flash memory from data corruption during fast power down events

Also Published As

Publication number Publication date
FR2871281A1 (fr) 2005-12-09
CN1961379A (zh) 2007-05-09
TWI373767B (en) 2012-10-01
TW200615957A (en) 2006-05-16
US7120061B2 (en) 2006-10-10
DE602005012080D1 (de) 2009-02-12
US20050219903A1 (en) 2005-10-06

Similar Documents

Publication Publication Date Title
FR2871281B1 (fr) Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee
FR2879800B1 (fr) Dispositif a memoire integree et procede
EP1769361A4 (fr) Procede et systeme permettant de terminer des instructions d'ecriture dans un systeme de memoire a concentrateur
EP1826896A4 (fr) Dispositif d'alimentation
EP1780046A4 (fr) Dispositif d'alimentation de liquide
EP1223493A4 (fr) Dispositif de commande d'alimentation, dispositif a semi-conducteur et procede d'excitation de ce dispositif a semi-conducteur
FR2878023B1 (fr) Procede et dispositif de fourniture d'eau chaude
FR2879230B1 (fr) Systeme et procede d'ajustement a une cle.
FR2858303B1 (fr) Dispositif et procede de delivrance d'un fluide
EP1580648A4 (fr) Dispositif usb et procede de controle d'un dispositif usb
EP1829299A4 (fr) Procede et dispositif destines a changer un dispositif pendant une connexion active
FR2847798B1 (fr) Procede pour determiner des parametres fonctionnels dans un dispositif de fluoroscopie
FR2860893B1 (fr) Procede et dispositif pour bloquer selectivement une action telecommandee
EP1557888A4 (fr) Dispositif a semi-conducteur et procede permettant de produire ce dispositif
TW556905U (en) Memory card adapting device
EP1326168A4 (fr) Procede de gestion de donnees pour un dispositif a memoire
EP1661065A4 (fr) Systeme et procede de commande de dispositif d'alimentation
FR2873233B1 (fr) Dispositif et procede de commande d'une inductance
EP1154487A4 (fr) Memoire a semiconducteur et procede de commande de memoire a semiconducteur
EP1586458A4 (fr) Procede et systeme d'alimentation en encre et conteneur d'encre
FR2845178B3 (fr) Peripherique d'ordinateur a fonction de memoire flash
EP1619150A4 (fr) Dispositif d'alimentation et dispositif d'enregistrement
FR2848037B1 (fr) Systeme et procede pour entendre une largeur d'impulsion
FR2862633B1 (fr) Dispositif permettant d'evacuer les boues presentes dans un circuit, notamment de chauffage
FR2850612B1 (fr) Procede et dispositif de gestion d'une unite motrice

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231