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FR2865813B1 - Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous - Google Patents

Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous

Info

Publication number
FR2865813B1
FR2865813B1 FR0400907A FR0400907A FR2865813B1 FR 2865813 B1 FR2865813 B1 FR 2865813B1 FR 0400907 A FR0400907 A FR 0400907A FR 0400907 A FR0400907 A FR 0400907A FR 2865813 B1 FR2865813 B1 FR 2865813B1
Authority
FR
France
Prior art keywords
mouses
extreme
ray
field
patterned mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0400907A
Other languages
English (en)
Other versions
FR2865813A1 (fr
Inventor
Jean Louis Stehle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PRODUCTION ET DE RECH S APPLIQ
Original Assignee
PRODUCTION ET DE RECH S APPLIQ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PRODUCTION ET DE RECH S APPLIQ filed Critical PRODUCTION ET DE RECH S APPLIQ
Priority to FR0400907A priority Critical patent/FR2865813B1/fr
Priority to US10/587,194 priority patent/US7763394B2/en
Priority to EP05717492A priority patent/EP1709484A2/fr
Priority to PCT/FR2005/000168 priority patent/WO2005083516A2/fr
Publication of FR2865813A1 publication Critical patent/FR2865813A1/fr
Application granted granted Critical
Publication of FR2865813B1 publication Critical patent/FR2865813B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
FR0400907A 2004-01-30 2004-01-30 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous Expired - Fee Related FR2865813B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0400907A FR2865813B1 (fr) 2004-01-30 2004-01-30 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous
US10/587,194 US7763394B2 (en) 2004-01-30 2005-01-26 Protected pattern mask for reflection lithography in the extreme UV or soft X-ray range
EP05717492A EP1709484A2 (fr) 2004-01-30 2005-01-26 MASQUE A MOTIFS PROTEGES, POUR LA LITHOGRAPHIE PAR REFLEXION DANS LE DOMAINE DE L’EXTREME UV ET DES RAYONS X MOUS
PCT/FR2005/000168 WO2005083516A2 (fr) 2004-01-30 2005-01-26 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l’extreme uv et des rayons x mous

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0400907A FR2865813B1 (fr) 2004-01-30 2004-01-30 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous

Publications (2)

Publication Number Publication Date
FR2865813A1 FR2865813A1 (fr) 2005-08-05
FR2865813B1 true FR2865813B1 (fr) 2006-06-23

Family

ID=34746336

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0400907A Expired - Fee Related FR2865813B1 (fr) 2004-01-30 2004-01-30 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous

Country Status (4)

Country Link
US (1) US7763394B2 (fr)
EP (1) EP1709484A2 (fr)
FR (1) FR2865813B1 (fr)
WO (1) WO2005083516A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP4946296B2 (ja) 2006-03-30 2012-06-06 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
CN105051604B (zh) 2013-03-15 2019-07-23 旭化成株式会社 表膜用膜和表膜
KR102171020B1 (ko) 2013-10-16 2020-10-29 삼성전자주식회사 엑스레이 흡수 필터를 갖는 엑스레이 시스템, 반도체 패키지, 및 트레이
CN108431693B (zh) 2015-10-22 2021-10-01 Asml荷兰有限公司 制造用于光刻设备的表膜的方法、用于光刻设备的表膜、光刻设备、器件制造方法、用于处理表膜的设备和用于处理表膜的方法
EP3674797B1 (fr) 2018-12-28 2021-05-05 IMEC vzw Scanner d'euvl

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474865A (en) * 1994-11-21 1995-12-12 Sematech, Inc. Globally planarized binary optical mask using buried absorbers
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5928817A (en) * 1997-12-22 1999-07-27 Intel Corporation Method of protecting an EUV mask from damage and contamination
JP2000012428A (ja) * 1998-06-19 2000-01-14 Canon Inc Ｘ線マスク構造体、該ｘ線マスク構造体を用いたｘ線露光方法、前記ｘ線マスク構造体を用いたｘ線露光装置、前記ｘ線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6197454B1 (en) * 1998-12-29 2001-03-06 Intel Corporation Clean-enclosure window to protect photolithographic mask
US6492067B1 (en) * 1999-12-03 2002-12-10 Euv Llc Removable pellicle for lithographic mask protection and handling
US6623893B1 (en) * 2001-01-26 2003-09-23 Advanced Micro Devices, Inc. Pellicle for use in EUV lithography and a method of making such a pellicle
US6803159B2 (en) * 2002-03-28 2004-10-12 Intel Corporation Method of keeping contaminants away from a mask with electrostatic forces
FR2839560B1 (fr) * 2002-05-07 2005-10-14 Commissariat Energie Atomique Masque pour photolithographie a elements absorbeurs/dephaseurs inclus
EP1385051A1 (fr) * 2002-06-14 2004-01-28 ASML Netherlands B.V. Appareil d'exposition pour la lithographie par UV extrême ayant un élément optique avec monocouche autoassemblée, élément optique avec un telle couche, procédé pour appliquer cette couche et méthode pour fabriquer un appareil
US20040130693A1 (en) * 2002-10-31 2004-07-08 Asml Netherlands B.V. Lithographic apparatus, optical element and device manufacturing method
US20040200572A1 (en) * 2003-04-08 2004-10-14 Edita Tejnil Assembling pellicle frames and photomasks

Also Published As

Publication number Publication date
WO2005083516A2 (fr) 2005-09-09
EP1709484A2 (fr) 2006-10-11
US20070160913A1 (en) 2007-07-12
US7763394B2 (en) 2010-07-27
WO2005083516A3 (fr) 2006-05-04
FR2865813A1 (fr) 2005-08-05

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Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 12

ST Notification of lapse

Effective date: 20160930