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FR2842387B1 - HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION - Google Patents

HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Info

Publication number
FR2842387B1
FR2842387B1 FR0208728A FR0208728A FR2842387B1 FR 2842387 B1 FR2842387 B1 FR 2842387B1 FR 0208728 A FR0208728 A FR 0208728A FR 0208728 A FR0208728 A FR 0208728A FR 2842387 B1 FR2842387 B1 FR 2842387B1
Authority
FR
France
Prior art keywords
implementation
etching method
heating shield
plasma engraving
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0208728A
Other languages
French (fr)
Other versions
FR2842387A1 (en
Inventor
Michel Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to FR0208728A priority Critical patent/FR2842387B1/en
Priority to EP03763950A priority patent/EP1523754A2/en
Priority to US10/516,457 priority patent/US20050224178A1/en
Priority to PCT/FR2003/002156 priority patent/WO2004008477A2/en
Priority to JP2004520754A priority patent/JP2005532693A/en
Publication of FR2842387A1 publication Critical patent/FR2842387A1/en
Application granted granted Critical
Publication of FR2842387B1 publication Critical patent/FR2842387B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
FR0208728A 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION Expired - Fee Related FR2842387B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0208728A FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION
EP03763950A EP1523754A2 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
US10/516,457 US20050224178A1 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
PCT/FR2003/002156 WO2004008477A2 (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor, and etching method using same
JP2004520754A JP2005532693A (en) 2002-07-11 2003-07-10 Heating jacket for plasma etching reactor and etching method using heating jacket

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0208728A FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Publications (2)

Publication Number Publication Date
FR2842387A1 FR2842387A1 (en) 2004-01-16
FR2842387B1 true FR2842387B1 (en) 2005-07-08

Family

ID=29763738

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0208728A Expired - Fee Related FR2842387B1 (en) 2002-07-11 2002-07-11 HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION

Country Status (5)

Country Link
US (1) US20050224178A1 (en)
EP (1) EP1523754A2 (en)
JP (1) JP2005532693A (en)
FR (1) FR2842387B1 (en)
WO (1) WO2004008477A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
WO2009117565A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
KR101900527B1 (en) * 2011-04-11 2018-09-19 램 리써치 코포레이션 E-beam enhanced decoupled source for semiconductor processing
CN105957792A (en) * 2016-06-30 2016-09-21 上海华力微电子有限公司 Etching method of semiconductor structure
JP7422531B2 (en) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 Plasma processing equipment and plasma processing method

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880396A (en) * 1973-10-25 1975-04-29 Eaton Corp Quick change panel fastening system
JPS6056431B2 (en) * 1980-10-09 1985-12-10 三菱電機株式会社 plasma etching equipment
US4439463A (en) * 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
DE3776562D1 (en) * 1986-09-12 1992-03-12 Memtec Ltd HOLLOW FIBER FILTER CARTRIDGE AND DISTRIBUTOR.
JP2677418B2 (en) * 1989-06-22 1997-11-17 富士通株式会社 ATM switch system switching method
DE4007123A1 (en) * 1990-03-07 1991-09-12 Siegfried Dipl Ing Dr Straemke Plasma treatment appts. - has working vessel with vacuum sealed vessel with evacuation of the intermediate zone
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6518195B1 (en) * 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
DE4241045C1 (en) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
US5328556A (en) * 1992-12-31 1994-07-12 Nace Technology, Inc. Wafer fabrication
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
JPH07273086A (en) * 1994-03-30 1995-10-20 Sumitomo Metal Ind Ltd Plasma processing apparatus and plasma processing method using the apparatus
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3778299B2 (en) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 Plasma etching method
JP3257328B2 (en) * 1995-03-16 2002-02-18 株式会社日立製作所 Plasma processing apparatus and plasma processing method
JP3218917B2 (en) * 1995-05-19 2001-10-15 株式会社日立製作所 Plasma processing apparatus and plasma processing method
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US5908316A (en) * 1995-12-18 1999-06-01 Motorola, Inc. Method of passivating a semiconductor substrate
JPH09186137A (en) * 1995-12-27 1997-07-15 Sony Corp Semiconductor manufacturing equipment
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6692617B1 (en) * 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
KR100258984B1 (en) * 1997-12-24 2000-08-01 윤종용 Dry etching apparatus
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
JP2000082694A (en) * 1998-06-29 2000-03-21 Sumitomo Metal Ind Ltd Plasma processing equipment
DE19900179C1 (en) * 1999-01-07 2000-02-24 Bosch Gmbh Robert Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another
KR100738141B1 (en) * 1999-04-14 2007-07-10 서페이스 테크놀로지 시스템스 피엘씨 Plasma stabilization method and apparatus
DE19919469A1 (en) * 1999-04-29 2000-11-02 Bosch Gmbh Robert Process for plasma etching silicon
WO2000070916A1 (en) * 1999-05-14 2000-11-23 Asuk Technologies, Llc Electrical heating devices and resettable fuses
JP2001077094A (en) * 1999-09-07 2001-03-23 Matsushita Electric Ind Co Ltd Plasma processing equipment
US6408786B1 (en) * 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
TW503442B (en) * 2000-02-29 2002-09-21 Applied Materials Inc Coil and coil support for generating a plasma
WO2002020864A2 (en) * 2000-06-16 2002-03-14 Applied Materials, Inc. System and method for depositing high dielectric constant materials and compatible conductive materials
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US20030052088A1 (en) * 2001-09-19 2003-03-20 Anisul Khan Method for increasing capacitance in stacked and trench capacitors
US20030188685A1 (en) * 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US6759340B2 (en) * 2002-05-09 2004-07-06 Padmapani C. Nallan Method of etching a trench in a silicon-on-insulator (SOI) structure
US20030213560A1 (en) * 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
FR2842388B1 (en) * 2002-07-11 2004-09-24 Cit Alcatel METHOD AND DEVICE FOR ETCHING SUBSTRATE BY INDUCTIVE PLASMA WITH VERY HIGH POWER
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7205240B2 (en) * 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process

Also Published As

Publication number Publication date
FR2842387A1 (en) 2004-01-16
JP2005532693A (en) 2005-10-27
WO2004008477A2 (en) 2004-01-22
US20050224178A1 (en) 2005-10-13
EP1523754A2 (en) 2005-04-20
WO2004008477A3 (en) 2004-04-08

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Legal Events

Date Code Title Description
CD Change of name or company name
TP Transmission of property
ST Notification of lapse

Effective date: 20120330