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FR2736205B1 - Dispositif detecteur a semiconducteur et son procede de formation - Google Patents

Dispositif detecteur a semiconducteur et son procede de formation

Info

Publication number
FR2736205B1
FR2736205B1 FR9507903A FR9507903A FR2736205B1 FR 2736205 B1 FR2736205 B1 FR 2736205B1 FR 9507903 A FR9507903 A FR 9507903A FR 9507903 A FR9507903 A FR 9507903A FR 2736205 B1 FR2736205 B1 FR 2736205B1
Authority
FR
France
Prior art keywords
sensor device
forming method
semiconductor sensor
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9507903A
Other languages
English (en)
Other versions
FR2736205A1 (fr
Inventor
Lionel Lescouzeres
Jean Paul Guillemet
Andre Peyre-Lavigne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Priority to FR9507903A priority Critical patent/FR2736205B1/fr
Priority to EP96110163A priority patent/EP0751389B1/fr
Priority to DE69630488T priority patent/DE69630488T2/de
Priority to US08/669,013 priority patent/US5907765A/en
Priority to JP8186774A priority patent/JPH09119912A/ja
Publication of FR2736205A1 publication Critical patent/FR2736205A1/fr
Application granted granted Critical
Publication of FR2736205B1 publication Critical patent/FR2736205B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
  • Measuring Volume Flow (AREA)
FR9507903A 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation Expired - Lifetime FR2736205B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9507903A FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation
EP96110163A EP0751389B1 (fr) 1995-06-30 1996-06-24 Capteur semi-conducteur et son procédé de formation
DE69630488T DE69630488T2 (de) 1995-06-30 1996-06-24 Halbleitersensor und Methode zu dessen Herstellung
US08/669,013 US5907765A (en) 1995-06-30 1996-06-24 Method for forming a semiconductor sensor device
JP8186774A JPH09119912A (ja) 1995-06-30 1996-06-27 半導体センサ装置およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9507903A FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation

Publications (2)

Publication Number Publication Date
FR2736205A1 FR2736205A1 (fr) 1997-01-03
FR2736205B1 true FR2736205B1 (fr) 1997-09-19

Family

ID=9480570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9507903A Expired - Lifetime FR2736205B1 (fr) 1995-06-30 1995-06-30 Dispositif detecteur a semiconducteur et son procede de formation

Country Status (5)

Country Link
US (1) US5907765A (fr)
EP (1) EP0751389B1 (fr)
JP (1) JPH09119912A (fr)
DE (1) DE69630488T2 (fr)
FR (1) FR2736205B1 (fr)

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FR2772512B1 (fr) * 1997-12-16 2004-04-16 Commissariat Energie Atomique Microsysteme a element deformable sous l'effet d'un actionneur thermique
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US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
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FR2808919B1 (fr) * 2000-05-15 2002-07-19 Memscap Microcomposant electronique du type capacite variable ou microswitch, ou procede de fabrication d'un tel composant
US6685823B2 (en) * 2000-10-16 2004-02-03 Uniroyal Chemical Company, Inc. C-nitrosoaniline compounds and their blends as polymerization inhibitors
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WO2003050854A2 (fr) * 2001-12-12 2003-06-19 The Pennsylvania State University Gabarits de reacteur chimique: fabrication de couche sacrificielle et utilisation de gabarits
US7309620B2 (en) * 2002-01-11 2007-12-18 The Penn State Research Foundation Use of sacrificial layers in the manufacture of high performance systems on tailored substrates
DE10219254B4 (de) * 2002-04-30 2011-08-11 Robert Bosch GmbH, 70469 Mikromechanisches Bauelement mit einem Isolationsbereich und entsprechendes Herstellungsverfahren
US7080545B2 (en) * 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
US20040163445A1 (en) * 2002-10-17 2004-08-26 Dimeo Frank Apparatus and process for sensing fluoro species in semiconductor processing systems
US7296458B2 (en) * 2002-10-17 2007-11-20 Advanced Technology Materials, Inc Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same
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US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
KR100812996B1 (ko) * 2006-12-07 2008-03-13 한국전자통신연구원 마이크로 가스 센서 및 그 제조방법
AU2007334393A1 (en) 2006-12-14 2008-06-26 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8262900B2 (en) * 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US8415177B2 (en) 2010-06-30 2013-04-09 Life Technologies Corporation Two-transistor pixel array
TW201716791A (zh) 2010-06-30 2017-05-16 生命技術公司 用於測試離子感測場效電晶體（ｉｓｆｅｔ）陣列之裝置及方法
TWI580955B (zh) 2010-06-30 2017-05-01 生命技術公司 離子感測電荷累積電路及方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
JP5876044B2 (ja) 2010-07-03 2016-03-02 ライフ テクノロジーズ コーポレーション 低濃度ドープドレインを有する化学的感応性センサ
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
EP2642289A1 (fr) 2012-03-20 2013-09-25 Sensirion AG Dispositif électronique portable
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9772317B2 (en) 2012-07-26 2017-09-26 Sensirion Ag Method for operating a portable electronic device
US11371951B2 (en) 2012-09-27 2022-06-28 Sensirion Ag Gas sensor comprising a set of one or more sensor cells
US8802568B2 (en) 2012-09-27 2014-08-12 Sensirion Ag Method for manufacturing chemical sensor with multiple sensor cells
US9080968B2 (en) * 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
JP2016510895A (ja) 2013-03-15 2016-04-11 ライフ テクノロジーズ コーポレーション 一貫性のあるセンサ表面積を有する化学センサ
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US9863901B2 (en) 2013-12-06 2018-01-09 Robert Bosch Gmbh Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
TWI794007B (zh) 2014-12-18 2023-02-21 美商生命技術公司 積體電路裝置、感測器裝置及積體電路
DE102015210659A1 (de) * 2015-06-11 2016-12-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Festkörperelekrolyt-Sensorelements
CA3034248A1 (fr) 2016-08-18 2018-02-22 Carrier Corporation Capteur isole et procede d'isolement de capteur

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GB2198611B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
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US5345213A (en) * 1992-10-26 1994-09-06 The United States Of America, As Represented By The Secretary Of Commerce Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation
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Also Published As

Publication number Publication date
EP0751389A1 (fr) 1997-01-02
US5907765A (en) 1999-05-25
FR2736205A1 (fr) 1997-01-03
EP0751389B1 (fr) 2003-10-29
DE69630488T2 (de) 2004-05-13
JPH09119912A (ja) 1997-05-06
DE69630488D1 (de) 2003-12-04

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