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FR2711276B1 - Cellule photovoltaïque et procédé de fabrication d'une telle cellule. - Google Patents

Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Info

Publication number
FR2711276B1
FR2711276B1 FR9312246A FR9312246A FR2711276B1 FR 2711276 B1 FR2711276 B1 FR 2711276B1 FR 9312246 A FR9312246 A FR 9312246A FR 9312246 A FR9312246 A FR 9312246A FR 2711276 B1 FR2711276 B1 FR 2711276B1
Authority
FR
France
Prior art keywords
layer
pct
cell
conductivity type
date
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9312246A
Other languages
English (en)
Other versions
FR2711276A1 (fr
Inventor
Herbert Keppner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Neuchatel
Original Assignee
Universite de Neuchatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Neuchatel filed Critical Universite de Neuchatel
Priority to FR9312246A priority Critical patent/FR2711276B1/fr
Priority to US08/446,628 priority patent/US5589008A/en
Priority to PCT/CH1994/000192 priority patent/WO1995010856A1/fr
Priority to EP94926766A priority patent/EP0673549A1/fr
Priority to JP7511140A priority patent/JPH08508368A/ja
Priority to AU76506/94A priority patent/AU7650694A/en
Publication of FR2711276A1 publication Critical patent/FR2711276A1/fr
Application granted granted Critical
Publication of FR2711276B1 publication Critical patent/FR2711276B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Photovoltaic Devices (AREA)
FR9312246A 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule. Expired - Fee Related FR2711276B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9312246A FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.
US08/446,628 US5589008A (en) 1993-10-11 1994-09-27 Photovoltaic cell and method for fabrication of said cell
PCT/CH1994/000192 WO1995010856A1 (fr) 1993-10-11 1994-09-27 Cellule photovoltaique et procede de fabrication d'une telle cellule
EP94926766A EP0673549A1 (fr) 1993-10-11 1994-09-27 Cellule photovoltaique et procede de fabrication d'une telle cellule
JP7511140A JPH08508368A (ja) 1993-10-11 1994-09-27 光電池および光電池を製造するための方法
AU76506/94A AU7650694A (en) 1993-10-11 1994-09-27 Photovoltaic cell and method for fabrication of said cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9312246A FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Publications (2)

Publication Number Publication Date
FR2711276A1 FR2711276A1 (fr) 1995-04-21
FR2711276B1 true FR2711276B1 (fr) 1995-12-01

Family

ID=9451834

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9312246A Expired - Fee Related FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Country Status (6)

Country Link
US (1) US5589008A (fr)
EP (1) EP0673549A1 (fr)
JP (1) JPH08508368A (fr)
AU (1) AU7650694A (fr)
FR (1) FR2711276B1 (fr)
WO (1) WO1995010856A1 (fr)

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US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
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US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
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Also Published As

Publication number Publication date
WO1995010856A1 (fr) 1995-04-20
JPH08508368A (ja) 1996-09-03
EP0673549A1 (fr) 1995-09-27
US5589008A (en) 1996-12-31
FR2711276A1 (fr) 1995-04-21
AU7650694A (en) 1995-05-04

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