FR2772967B1 - Cellule de memoire eeprom protegee - Google Patents

Cellule de memoire eeprom protegee

Info

Publication number: FR2772967B1
Authority: FR; France
Prior art keywords: memory cell; eeprom memory; protected; protected eeprom; cell
Prior art date: 1997-12-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9716433A

Other languages

English (en)

Other versions

FR2772967A1 (fr

Inventor

Federico Pio

Nicola Zatelli

Laurent Sourgen

Mathieu Lisart

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SRL

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics SRL

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-12-18

Filing date

1997-12-18

Publication date

2004-01-02

1997-12-18 Application filed by SGS Thomson Microelectronics SRL, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SRL

1997-12-18 Priority to FR9716433A priority Critical patent/FR2772967B1/fr

1998-12-04 Priority to DE69831921T priority patent/DE69831921D1/de

1998-12-04 Priority to EP98123137A priority patent/EP0926737B1/fr

1998-12-17 Priority to US09/215,650 priority patent/US6151245A/en

1998-12-18 Priority to JP36090498A priority patent/JPH11265588A/ja

1999-06-25 Publication of FR2772967A1 publication Critical patent/FR2772967A1/fr

2004-01-02 Application granted granted Critical

2004-01-02 Publication of FR2772967B1 publication Critical patent/FR2772967B1/fr

2017-12-18 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00

FR9716433A 1997-12-18 1997-12-18 Cellule de memoire eeprom protegee Expired - Fee Related FR2772967B1 (fr)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
FR9716433A FR2772967B1 (fr)	1997-12-18	1997-12-18	Cellule de memoire eeprom protegee
DE69831921T DE69831921D1 (de)	1997-12-18	1998-12-04	Eine geschützte EEPROM Zelle
EP98123137A EP0926737B1 (fr)	1997-12-18	1998-12-04	Cellule de mémoire EEPROM protégée
US09/215,650 US6151245A (en)	1997-12-18	1998-12-17	Screened EEPROM cell
JP36090498A JPH11265588A (ja)	1997-12-18	1998-12-18	スクリーン付きｅｅｐｒｏｍセル

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9716433A FR2772967B1 (fr)	1997-12-18	1997-12-18	Cellule de memoire eeprom protegee

Publications (2)

Publication Number	Publication Date
FR2772967A1 FR2772967A1 (fr)	1999-06-25
FR2772967B1 true FR2772967B1 (fr)	2004-01-02

Family

ID=9515069

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9716433A Expired - Fee Related FR2772967B1 (fr)	1997-12-18	1997-12-18	Cellule de memoire eeprom protegee

Country Status (5)

Country	Link
US (1)	US6151245A (fr)
EP (1)	EP0926737B1 (fr)
JP (1)	JPH11265588A (fr)
DE (1)	DE69831921D1 (fr)
FR (1)	FR2772967B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4281331B2 (ja)	2002-01-21	2009-06-17	株式会社デンソー	不揮発性半導体記憶装置
EP2600784B1 (fr)	2010-08-05	2021-12-29	Medtronic Ireland Manufacturing Unlimited Company	Appareils, systèmes et procédés de neuromodulation rénale par cryoablation
US9060754B2 (en)	2010-10-26	2015-06-23	Medtronic Ardian Luxembourg S.A.R.L.	Neuromodulation cryotherapeutic devices and associated systems and methods
US20120158104A1 (en)	2010-10-26	2012-06-21	Medtronic Ardian Luxembourg S.A.R.L.	Neuromodulation cryotherapeutic devices and associated systems and methods

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2471051A1 (fr) *	1979-11-30	1981-06-12	Dassault Electronique	Circuit integre a transistors mos protege contre l'analyse et carte comprenant un tel circuit
EP0169941B1 (fr) *	1984-07-31	1989-10-18	Siemens Aktiengesellschaft	Circuit intégré semi-conducteur monolithique
FR2569054B1 (fr) *	1984-08-10	1986-11-28	Eurotechnique Sa	Dispositif de neutralisation de l'acces a une zone a proteger d'un circuit integre
DE4422791C2 (de) *	1993-06-29	2001-11-29	Toshiba Kawasaki Kk	Halbleitervorrichtungen mit einem eine Inversionsschicht in einem Oberflächenbereich eines Halbleitersubstrats induzierenden leitenden Film
US5557569A (en) *	1993-10-12	1996-09-17	Texas Instruments Incorporated	Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US5504706A (en) *	1993-10-12	1996-04-02	Texas Instruments Incorporated	Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells
US5852290A (en) *	1995-08-04	1998-12-22	Thomson Consumer Electronics, Inc.	Smart-card based access control system with improved security
KR970054309A (ko) *	1995-12-29	1997-07-31	김주용	불 휘발성 반도체 메모리장치
US5751038A (en) *	1996-11-26	1998-05-12	Philips Electronics North America Corporation	Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers

1997
- 1997-12-18 FR FR9716433A patent/FR2772967B1/fr not_active Expired - Fee Related
1998
- 1998-12-04 EP EP98123137A patent/EP0926737B1/fr not_active Expired - Lifetime
- 1998-12-04 DE DE69831921T patent/DE69831921D1/de not_active Expired - Lifetime
- 1998-12-17 US US09/215,650 patent/US6151245A/en not_active Expired - Lifetime
- 1998-12-18 JP JP36090498A patent/JPH11265588A/ja active Pending

Also Published As

Publication number	Publication date
EP0926737A2 (fr)	1999-06-30
EP0926737B1 (fr)	2005-10-19
FR2772967A1 (fr)	1999-06-25
US6151245A (en)	2000-11-21
EP0926737A3 (fr)	1999-07-14
JPH11265588A (ja)	1999-09-28
DE69831921D1 (de)	2006-03-02

Publication	Publication Date	Title
FR2770328B1 (fr)	2001-11-23	Point memoire remanent
DE19880311T1 (de)	1999-05-12	Nichtflüchtige Speicherstruktur
DE69937259D1 (de)	2007-11-15	Nichtflüchtiges Speicherregister
DE69528329D1 (de)	2002-10-31	EEPROM-Speicherzelle
EP0623959A3 (fr)	1995-02-01	Cellule eeprom.
EP1016085A4 (fr)	2003-10-15	Ensemble memoire flash
DE69833290D1 (de)	2006-04-13	Speicherkarte
DE69823180D1 (de)	2004-05-19	Speicherzugangsschutz
DE69810096D1 (de)	2003-01-23	Nichtflüchtiger speicher
EE200100109A (et)	2002-06-17	Kiipkaarditasku
DE69827714D1 (de)	2004-12-30	Assoziativspeichersystem
DE69826539D1 (de)	2004-11-04	Cachespeichersystem
DE69803860D1 (de)	2002-03-21	Direktspeicherzugriffseinheit
DE69604929D1 (de)	1999-12-02	Flash-eeprom-speicher mit getrennter referenzmatix
DE69936654D1 (de)	2007-09-06	Speicheranordnung
EP0917153A4 (fr)	2000-12-13	Memoire a semi-conducteurs
DE19882486T1 (de)	2000-06-15	Synchroner, nicht-flüchtiger Seitenmodus-Speicher
DE69829011D1 (de)	2005-03-17	Referenz zelle für ferroelektrischen 1T/1C-Speicher
EP1153395A4 (fr)	2002-04-17	Organisation d'un circuit de memoire
DE69829092D1 (de)	2005-03-31	Festwertspeicher
DE69817955D1 (de)	2003-10-16	Assoziativspeicher
DE59913423D1 (de)	2006-06-14	Speicherzellenanordnung
DE59905214D1 (de)	2003-05-28	Ferroelektrische speicheranordnung
IT1295910B1 (it)	1999-05-28	Circuito di lettura per memorie non volatili
DE50014731D1 (de)	2007-12-06	Speicherzellenanordnung

Legal Events

Date	Code	Title	Description
2006-11-17	ST	Notification of lapse	Effective date: 20060831