FR2752302B1 - Capteur de champ magnetique a pont de magnetoresistances - Google Patents
Capteur de champ magnetique a pont de magnetoresistancesInfo
- Publication number
- FR2752302B1 FR2752302B1 FR9610004A FR9610004A FR2752302B1 FR 2752302 B1 FR2752302 B1 FR 2752302B1 FR 9610004 A FR9610004 A FR 9610004A FR 9610004 A FR9610004 A FR 9610004A FR 2752302 B1 FR2752302 B1 FR 2752302B1
- Authority
- FR
- France
- Prior art keywords
- magnetic field
- field sensor
- magnetoresistance
- bridge
- magnetoresistance bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9610004A FR2752302B1 (fr) | 1996-08-08 | 1996-08-08 | Capteur de champ magnetique a pont de magnetoresistances |
| JP10509450A JPH11513128A (ja) | 1996-08-08 | 1997-08-07 | 磁気抵抗ブリッジを有する磁場センサ |
| EP97936752A EP0853766A1 (fr) | 1996-08-08 | 1997-08-07 | Capteur de champ magnetique a pont de magnetoresistances |
| PCT/FR1997/001465 WO1998007042A1 (fr) | 1996-08-08 | 1997-08-07 | Capteur de champ magnetique a pont de magnetoresistances |
| US09/043,907 US6069476A (en) | 1996-08-08 | 1997-08-07 | Magnetic field sensor having a magnetoresistance bridge with a pair of magnetoresistive elements featuring a plateau effect in their resistance-magnetic field response |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9610004A FR2752302B1 (fr) | 1996-08-08 | 1996-08-08 | Capteur de champ magnetique a pont de magnetoresistances |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2752302A1 FR2752302A1 (fr) | 1998-02-13 |
| FR2752302B1 true FR2752302B1 (fr) | 1998-09-11 |
Family
ID=9494921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9610004A Expired - Fee Related FR2752302B1 (fr) | 1996-08-08 | 1996-08-08 | Capteur de champ magnetique a pont de magnetoresistances |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6069476A (fr) |
| EP (1) | EP0853766A1 (fr) |
| JP (1) | JPH11513128A (fr) |
| FR (1) | FR2752302B1 (fr) |
| WO (1) | WO1998007042A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529114B1 (en) * | 1998-05-27 | 2003-03-04 | Honeywell International Inc. | Magnetic field sensing device |
| JP2002522866A (ja) * | 1998-08-14 | 2002-07-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | スピントンネル接合素子を具える磁界センサ |
| FR2787197B1 (fr) * | 1998-12-11 | 2001-02-23 | Thomson Csf | Capteur de champ magnetique a magnetoresistance geante |
| EP1074815A1 (fr) * | 1999-08-04 | 2001-02-07 | FESTO AG & Co | Capteur magnétique biaxial de position |
| DE10122468C1 (de) * | 2001-05-09 | 2003-03-20 | Heusler Isabellenhuette | Elektrischer Widerstand und Verfahren zu seiner Herstellung |
| JP3603872B2 (ja) * | 2001-05-16 | 2004-12-22 | 松下電器産業株式会社 | 磁気センサとこれを用いた紙幣識別装置 |
| US6949927B2 (en) | 2001-08-27 | 2005-09-27 | International Rectifier Corporation | Magnetoresistive magnetic field sensors and motor control devices using same |
| US6771472B1 (en) | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| DE10213941A1 (de) * | 2002-03-28 | 2003-10-30 | Bosch Gmbh Robert | Sensorelement und Gradiometeranordnung, deren Verwendung zum Messen von Magnetfeldgradienten und Verfahren hierzu |
| US7375516B2 (en) | 2004-02-19 | 2008-05-20 | Mitsubishi Electric Corporation | Magnetic field detector, current detector, position detector and rotation detector employing it |
| DE102004047770B4 (de) * | 2004-09-30 | 2014-08-21 | Infineon Technologies Ag | Sensor zum Erzeugen eines Ausgangssignals aufgrund eines Messmagnetfelds sowie Verfahren zum Abgleichen und zum Betrieb eines solchen |
| FR2880131B1 (fr) * | 2004-12-23 | 2007-03-16 | Thales Sa | Procede de mesure d'un champ magnetique faible et capteur de champ magnetique a sensibilite amelioree |
| KR20070087628A (ko) * | 2004-12-28 | 2007-08-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 조정 가능한 특성을 지닌 브릿지-유형의 센서 |
| DE102005047413B8 (de) * | 2005-02-23 | 2012-05-10 | Infineon Technologies Ag | Magnetfeldsensorelement und Verfahren zum Durchführen eines On-Wafer-Funktionstests, sowie Verfahren zur Herstellung von Magnetfeldsensorelementen und Verfahren zur Herstellung von Magnetfeldsensorelementen mit On-Wafer-Funktionstest |
| JP4406632B2 (ja) * | 2006-08-31 | 2010-02-03 | アルプス電気株式会社 | 磁気検出装置およびその製造方法 |
| KR101107668B1 (ko) * | 2006-09-07 | 2012-01-25 | 알프스 덴키 가부시키가이샤 | 자기검출장치 |
| JP4639216B2 (ja) * | 2007-06-07 | 2011-02-23 | アルプス電気株式会社 | 磁気センサ |
| WO2009031539A1 (fr) * | 2007-09-03 | 2009-03-12 | Alps Electric Co., Ltd. | Dispositif de détection magnétique |
| DE102007044485A1 (de) * | 2007-09-18 | 2009-04-02 | Infineon Technologies Ag | Magnetfeldsensor mit einem Sensorelement und Sensormodul mit einem Magnetfeldsensor |
| US7923987B2 (en) | 2007-10-08 | 2011-04-12 | Infineon Technologies Ag | Magnetic sensor integrated circuit with test conductor |
| US8559139B2 (en) | 2007-12-14 | 2013-10-15 | Intel Mobile Communications GmbH | Sensor module and method for manufacturing a sensor module |
| US8080993B2 (en) * | 2008-03-27 | 2011-12-20 | Infineon Technologies Ag | Sensor module with mold encapsulation for applying a bias magnetic field |
| US7724566B1 (en) | 2008-08-27 | 2010-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive resistor memory cell |
| WO2013085547A1 (fr) | 2011-12-05 | 2013-06-13 | Advanced Microsensors Corporation | Appareil de détection de champ magnétique et procédés associés |
| DE102014205949A1 (de) * | 2014-03-31 | 2015-10-01 | Siemens Aktiengesellschaft | Durchflusskammer für einen Durchflusszytometer sowie Durchflusszytometer |
| US9812637B2 (en) | 2015-06-05 | 2017-11-07 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
| CN106597326B (zh) * | 2015-10-16 | 2020-01-07 | 爱盛科技股份有限公司 | 磁场感测装置 |
| US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
| US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
| JP2019087688A (ja) | 2017-11-09 | 2019-06-06 | Tdk株式会社 | 磁気センサ |
| US11175353B2 (en) | 2018-02-16 | 2021-11-16 | Analog Devices International Unlimited Company | Position sensor with compensation for magnet movement and related position sensing method |
| US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
| US12320870B2 (en) | 2022-07-19 | 2025-06-03 | Allegro Microsystems, Llc | Controlling out-of-plane anisotropy in an MR sensor with free layer dusting |
| US12359904B2 (en) | 2023-01-26 | 2025-07-15 | Allegro Microsystems, Llc | Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials |
| US12352832B2 (en) | 2023-01-30 | 2025-07-08 | Allegro Microsystems, Llc | Reducing angle error in angle sensor due to orthogonality drift over magnetic-field |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS576962Y2 (fr) * | 1974-07-26 | 1982-02-09 | ||
| US4447781A (en) * | 1981-10-13 | 1984-05-08 | Honeywell Inc. | Magnetoresistive transducer apparatus |
| US4533872A (en) * | 1982-06-14 | 1985-08-06 | Honeywell Inc. | Magnetic field sensor element capable of measuring magnetic field components in two directions |
| US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
| US5569544A (en) * | 1992-11-16 | 1996-10-29 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components |
| US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
| US5351005A (en) * | 1992-12-31 | 1994-09-27 | Honeywell Inc. | Resetting closed-loop magnetoresistive magnetic sensor |
| FR2715507B1 (fr) * | 1994-01-25 | 1996-04-05 | Commissariat Energie Atomique | Magnétorésistance multicouche polarisée. |
| JPH08511873A (ja) * | 1994-04-15 | 1996-12-10 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 磁界センサ、そんなセンサを具えた装置及びそんなセンサを製造する方法 |
| US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
-
1996
- 1996-08-08 FR FR9610004A patent/FR2752302B1/fr not_active Expired - Fee Related
-
1997
- 1997-08-07 JP JP10509450A patent/JPH11513128A/ja active Pending
- 1997-08-07 WO PCT/FR1997/001465 patent/WO1998007042A1/fr not_active Ceased
- 1997-08-07 US US09/043,907 patent/US6069476A/en not_active Expired - Fee Related
- 1997-08-07 EP EP97936752A patent/EP0853766A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998007042A1 (fr) | 1998-02-19 |
| FR2752302A1 (fr) | 1998-02-13 |
| EP0853766A1 (fr) | 1998-07-22 |
| JPH11513128A (ja) | 1999-11-09 |
| US6069476A (en) | 2000-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20060428 |