[go: up one dir, main page]

FR2742871B1 - Localisation de defauts d'une couche metallique d'un circuit semiconducteur - Google Patents

Localisation de defauts d'une couche metallique d'un circuit semiconducteur

Info

Publication number
FR2742871B1
FR2742871B1 FR9515786A FR9515786A FR2742871B1 FR 2742871 B1 FR2742871 B1 FR 2742871B1 FR 9515786 A FR9515786 A FR 9515786A FR 9515786 A FR9515786 A FR 9515786A FR 2742871 B1 FR2742871 B1 FR 2742871B1
Authority
FR
France
Prior art keywords
defects
location
metal layer
semiconductor circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9515786A
Other languages
English (en)
Other versions
FR2742871A1 (fr
Inventor
Michel Marty
Alain Brun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Priority to FR9515786A priority Critical patent/FR2742871B1/fr
Priority to US08/770,476 priority patent/US5976898A/en
Publication of FR2742871A1 publication Critical patent/FR2742871A1/fr
Application granted granted Critical
Publication of FR2742871B1 publication Critical patent/FR2742871B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
FR9515786A 1995-12-22 1995-12-22 Localisation de defauts d'une couche metallique d'un circuit semiconducteur Expired - Fee Related FR2742871B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9515786A FR2742871B1 (fr) 1995-12-22 1995-12-22 Localisation de defauts d'une couche metallique d'un circuit semiconducteur
US08/770,476 US5976898A (en) 1995-12-22 1996-12-20 Localization of defects of a metallic layer of a semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9515786A FR2742871B1 (fr) 1995-12-22 1995-12-22 Localisation de defauts d'une couche metallique d'un circuit semiconducteur

Publications (2)

Publication Number Publication Date
FR2742871A1 FR2742871A1 (fr) 1997-06-27
FR2742871B1 true FR2742871B1 (fr) 1998-03-13

Family

ID=9486187

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9515786A Expired - Fee Related FR2742871B1 (fr) 1995-12-22 1995-12-22 Localisation de defauts d'une couche metallique d'un circuit semiconducteur

Country Status (2)

Country Link
US (1) US5976898A (fr)
FR (1) FR2742871B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500750B1 (en) * 1999-04-05 2002-12-31 Motorola, Inc. Semiconductor device and method of formation
US6566885B1 (en) * 1999-12-14 2003-05-20 Kla-Tencor Multiple directional scans of test structures on semiconductor integrated circuits
US7655482B2 (en) * 2000-04-18 2010-02-02 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
US6855568B2 (en) * 2001-06-29 2005-02-15 Kla-Tencor Corporation Apparatus and methods for monitoring self-aligned contact arrays using voltage contrast inspection
US6861666B1 (en) 2001-10-17 2005-03-01 Kla-Tencor Technologies Corporation Apparatus and methods for determining and localization of failures in test structures using voltage contrast
FR2845684B1 (fr) * 2002-10-09 2006-12-15 Saint Gobain Procede de suppression des defauts ponctuels inclus au sein d'un dispositif electrochimique
US7145344B2 (en) 2002-10-25 2006-12-05 Xilinx, Inc. Method and circuits for localizing defective interconnect resources in programmable logic devices
US9087841B2 (en) * 2013-10-29 2015-07-21 International Business Machines Corporation Self-correcting power grid for semiconductor structures method
US10283425B2 (en) * 2017-07-12 2019-05-07 United Microelectronics Corp. Test key and method for monitoring semiconductor wafer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489442A (en) * 1987-09-30 1989-04-03 Toshiba Corp Measuring method of semiconductor device
JP2970194B2 (ja) * 1992-04-02 1999-11-02 日本電気株式会社 半導体集積回路
JPH06110069A (ja) * 1992-09-29 1994-04-22 Matsushita Electric Ind Co Ltd 電子部品の欠陥修復方法および欠陥修復装置
US5430305A (en) * 1994-04-08 1995-07-04 The United States Of America As Represented By The United States Department Of Energy Light-induced voltage alteration for integrated circuit analysis

Also Published As

Publication number Publication date
FR2742871A1 (fr) 1997-06-27
US5976898A (en) 1999-11-02

Similar Documents

Publication Publication Date Title
DE69630902D1 (de) Lichtempfindliche Schicht
EP0815591A4 (fr) Interconnexion de traversees pour microcircuit
GB2326765B (en) Method of manufacturing semiconductor device having multilayer wiring
EP1011298A4 (fr) Substrat pour la formation de motifs speciaux et procede de fabrication d'un tel substrat
DE69535391D1 (de) Mehrlagenschaltungssubstrat
DE69626371D1 (de) Halbleiterschaltung
FR2730862B1 (fr) Connecteur a coins ameliore pour circuits integres
EP0686999A3 (fr) Formation de motifs pour la fabrication de composants micro-électroniques
FR2742871B1 (fr) Localisation de defauts d'une couche metallique d'un circuit semiconducteur
DE69620510D1 (de) Integrierte schaltungen mit randlosen kontaktlöchern
DE69619106D1 (de) Homogenes kühlsubstrat
FR2748601B1 (fr) Procede de formation d'interconnexions dans un circuit integre
KR970003587A (ko) 연마를 위한 예비형 반도체 회로기판의 성형 방법
FR2737939B1 (fr) Joint d'etancheite pour une batterie et procede de fabrication d'un tel joint
EP0735583A3 (fr) Circuits intégrés à semi-conducteur
EP0687068A3 (fr) Circuit d'attaque de sortie pour un circuit intégré à semi-conducteur
EP0692821A3 (fr) Méthode de fabrication d'une couche semi-conductrice
FR2770028B1 (fr) Procede de fabrication d'une structure d'interconnexion pour un dispositif a circuit integre
DE69620540D1 (de) Integrierte Halbleiterschaltung mit Differenzschaltkreis
GB2314456B (en) Method of forming a polycide layer in a semiconductor device
FR2767744B1 (fr) Substrat de formation d'image
DE69610737D1 (de) Bondflächen-Option für integrierte Schaltungen
DE59607616D1 (de) Metall-Halbleiterkontakt
FR2773262B1 (fr) Procede de formation d'elements conducteurs dans un circuit integre
DE69630493D1 (de) Metalloberflächenzustandsevaluationsmethode und Halbleiterproduktionsmethode

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090831