[go: up one dir, main page]

FR2620572B1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique

Info

Publication number
FR2620572B1
FR2620572B1 FR888811981A FR8811981A FR2620572B1 FR 2620572 B1 FR2620572 B1 FR 2620572B1 FR 888811981 A FR888811981 A FR 888811981A FR 8811981 A FR8811981 A FR 8811981A FR 2620572 B1 FR2620572 B1 FR 2620572B1
Authority
FR
France
Prior art keywords
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888811981A
Other languages
English (en)
Other versions
FR2620572A1 (fr
Inventor
Kaneo Watanabe
Masayuki Iwamoto
Koji Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2620572A1 publication Critical patent/FR2620572A1/fr
Application granted granted Critical
Publication of FR2620572B1 publication Critical patent/FR2620572B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR888811981A 1987-09-14 1988-09-14 Dispositif photovoltaique Expired - Fee Related FR2620572B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62229982A JPH0752778B2 (ja) 1987-09-14 1987-09-14 光起電力装置

Publications (2)

Publication Number Publication Date
FR2620572A1 FR2620572A1 (fr) 1989-03-17
FR2620572B1 true FR2620572B1 (fr) 1992-04-24

Family

ID=16900744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888811981A Expired - Fee Related FR2620572B1 (fr) 1987-09-14 1988-09-14 Dispositif photovoltaique

Country Status (3)

Country Link
US (1) US4922218A (fr)
JP (1) JPH0752778B2 (fr)
FR (1) FR2620572B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
JPH081949B2 (ja) * 1989-05-30 1996-01-10 三菱電機株式会社 赤外線撮像装置及びその製造方法
DE4027236B4 (de) * 1989-08-31 2005-03-31 Sanyo Electric Co., Ltd., Moriguchi Verfahren zur Herstellung von Filmen aus amorphem Silicium und einen solchen Film verwendende Photohalbleiter-Vorrichtung
JP3048732B2 (ja) * 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
US5444270A (en) * 1994-11-04 1995-08-22 At&T Corp. Surface-normal semiconductor optical cavity devices with antireflective layers
JP3318171B2 (ja) * 1995-11-10 2002-08-26 株式会社リコー 発光ダイオードアレイおよび光書込装置
ATE547812T1 (de) * 2007-07-18 2012-03-15 Imec Verfahren zur herstellung einer emitterstruktur und daraus resultierende emitterstrukturen
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
US8916769B2 (en) 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
EP2328183A1 (fr) * 2009-11-26 2011-06-01 Engineered Products Switzerland AG Substrat doté d'une feuille de métal destinée à la fabrication de cellules photovoltaïques
CN108630779B (zh) * 2018-05-04 2019-12-17 中国电子科技集团公司第十三研究所 碳化硅探测器及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
DE3300400A1 (de) * 1982-01-06 1983-07-14 Canon K.K., Tokyo Halbleiterbauelement
JPS5914679A (ja) * 1982-07-16 1984-01-25 Toshiba Corp 光起電力装置
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
US4556790A (en) * 1982-11-30 1985-12-03 At&T Bell Laboratories Photodetector having a contoured, substantially periodic surface
US4724323A (en) * 1984-10-04 1988-02-09 Canon Kabushiki Kaisha Image line sensor unit, photosensors for use in the sensor unit and method of making the photosensors
US4726851A (en) * 1984-11-27 1988-02-23 Toa Nenryo Kogyo K.K. Amorphous silicon semiconductor film and production process thereof

Also Published As

Publication number Publication date
FR2620572A1 (fr) 1989-03-17
JPS6473681A (en) 1989-03-17
JPH0752778B2 (ja) 1995-06-05
US4922218A (en) 1990-05-01

Similar Documents

Publication Publication Date Title
FR2650916B1 (fr) Dispositif photovoltaique
FR2588123B1 (fr) Dispositif photovoltaique
FR2625043B1 (fr) Dispositif semi-conducteur
FR2630808B1 (fr) Dispositif de raccordement
FR2604563B1 (fr) Dispositif photovoltaique
DK297187D0 (da) Regnbuedannende anordning
FR2585518B1 (fr) Dispositif de branchement
FR2576887B1 (fr) Dispositif elevateur
FR2620572B1 (fr) Dispositif photovoltaique
FR2604561B1 (fr) Dispositif photovoltaique
FR2647131B1 (fr) Dispositif gravillonneur
FR2608285B2 (fr) Dispositif antivol
FR2602293B1 (fr) Dispositif antisismique
NO170862C (no) Stroppanordning
FR2606161B1 (fr) Dispositif antivol
FR2622114B1 (fr) Dispositif de liposuccion
FR2628821B1 (fr) Dispositif de raccordement
DK360387A (da) Bestraalingsanordning
BR8703368A (pt) Dispositivo vibro-estimulador
FR2625098B1 (fr) Dispositif lave-oeil
IT208171Z2 (it) Dispositivo seguicamma
FR2593569B1 (fr) Dispositif de raccordement
FR2627591B1 (fr) Dispositif tachymetrique perfectionne
AT385885B (de) Tragvorrichtung
MX160170A (es) Dispositivo taquimetrico

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080531