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FR2535528B1 - INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS - Google Patents

INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS

Info

Publication number
FR2535528B1
FR2535528B1 FR8218248A FR8218248A FR2535528B1 FR 2535528 B1 FR2535528 B1 FR 2535528B1 FR 8218248 A FR8218248 A FR 8218248A FR 8218248 A FR8218248 A FR 8218248A FR 2535528 B1 FR2535528 B1 FR 2535528B1
Authority
FR
France
Prior art keywords
insulating
integrated circuit
circuit structure
semiconductor islands
around semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8218248A
Other languages
French (fr)
Other versions
FR2535528A1 (en
Inventor
Yvon Gris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EFCIS
Original Assignee
EFCIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EFCIS filed Critical EFCIS
Priority to FR8218248A priority Critical patent/FR2535528B1/en
Publication of FR2535528A1 publication Critical patent/FR2535528A1/en
Application granted granted Critical
Publication of FR2535528B1 publication Critical patent/FR2535528B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
FR8218248A 1982-10-29 1982-10-29 INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS Expired FR2535528B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8218248A FR2535528B1 (en) 1982-10-29 1982-10-29 INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8218248A FR2535528B1 (en) 1982-10-29 1982-10-29 INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS

Publications (2)

Publication Number Publication Date
FR2535528A1 FR2535528A1 (en) 1984-05-04
FR2535528B1 true FR2535528B1 (en) 1986-01-17

Family

ID=9278778

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8218248A Expired FR2535528B1 (en) 1982-10-29 1982-10-29 INTEGRATED CIRCUIT STRUCTURE ON INSULATING SUBSTRATE WITH INSULATING FILLER AROUND SEMICONDUCTOR ISLANDS

Country Status (1)

Country Link
FR (1) FR2535528B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178447B1 (en) * 1984-10-09 1993-02-17 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof
JP2791613B2 (en) * 1990-10-12 1998-08-27 三菱電機株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015279A (en) * 1975-05-27 1977-03-29 Rca Corporation Edgeless transistor
DE2728532A1 (en) * 1977-06-24 1979-01-11 Siemens Ag Barrier layer FET on insulating substrate - has series of insular gate zones connected to common gate terminal and extending through whole layer thickness

Also Published As

Publication number Publication date
FR2535528A1 (en) 1984-05-04

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Legal Events

Date Code Title Description
ST Notification of lapse