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FR2426743A1 - METHOD AND DEVICE FOR METAL COATING BY DEPOSIT IN THE FORM OF VAPORS - Google Patents

METHOD AND DEVICE FOR METAL COATING BY DEPOSIT IN THE FORM OF VAPORS

Info

Publication number
FR2426743A1
FR2426743A1 FR7913339A FR7913339A FR2426743A1 FR 2426743 A1 FR2426743 A1 FR 2426743A1 FR 7913339 A FR7913339 A FR 7913339A FR 7913339 A FR7913339 A FR 7913339A FR 2426743 A1 FR2426743 A1 FR 2426743A1
Authority
FR
France
Prior art keywords
aluminum
triisobutylaluminum
parts
argon
vapors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913339A
Other languages
French (fr)
Other versions
FR2426743B1 (en
Inventor
Rudolf August Herbert Heinecke
Ronald Carl Stern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2426743A1 publication Critical patent/FR2426743A1/en
Application granted granted Critical
Publication of FR2426743B1 publication Critical patent/FR2426743B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé et dispositif de dépôt de pellicules d'aluminium à partir de composés d'aluminium volatils. Le procédé selon l'invention permet le dépôt par pyrolyse d'aluminium à partir de triisobutyle d'aluminium. Il comprend les étapes suivantes : le passage d'un courant d'argon ou d'azote secs, exempts d'oxygène, dans une certaine quantité de triisobutylaluminium liquide maintenu à une température inférieure à 90 degrés C de façon à entraîner une certaine partie des vapeurs de triisobutylaluminium, l'introduction d'argon et du triisobutylaluminium entraîné dans une chambre de réaction contenant les pièces à revêtir, l'introduction sélective par pulsations d'argon ou d'azote secs, exempts d'oxygène, dans la chambre de réaction de façon à assurer une répartition de triisobutylaluminium sensiblement uniforme à l'intérieur du récipient, et le maintien des pièces à une température comprise entre 250 et 270 degrés C, ce qui provoque le dépôt par pyrolyse d'aluminium sur lesdites pièces. Application au revêtement avec des pellicules d'aluminium des électrodes de condensateur ou des trajets conducteurs de dispositifs à semi-conducteurs.Method and device for depositing aluminum films from volatile aluminum compounds. The process according to the invention allows the deposition by pyrolysis of aluminum from triisobutyl aluminum. It comprises the following steps: passing a stream of dry argon or nitrogen, free of oxygen, through a certain quantity of liquid triisobutylaluminum maintained at a temperature below 90 degrees C so as to entrain a certain part of the triisobutylaluminum vapors, the introduction of argon and triisobutylaluminum entrained in a reaction chamber containing the parts to be coated, the selective introduction by pulses of dry, oxygen-free argon or nitrogen into the reaction chamber so as to ensure a substantially uniform distribution of triisobutylaluminum inside the container, and to maintain the parts at a temperature of between 250 and 270 degrees C, which causes deposition by pyrolysis of aluminum on said parts. Application to the coating with aluminum films of capacitor electrodes or conductive paths of semiconductor devices.

FR7913339A 1978-05-25 1979-05-25 METHOD AND DEVICE FOR METAL COATING BY DEPOSIT IN THE FORM OF VAPORS Granted FR2426743A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22633/78A GB1594399A (en) 1978-05-25 1978-05-25 Metal deposition

Publications (2)

Publication Number Publication Date
FR2426743A1 true FR2426743A1 (en) 1979-12-21
FR2426743B1 FR2426743B1 (en) 1983-08-26

Family

ID=10182595

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913339A Granted FR2426743A1 (en) 1978-05-25 1979-05-25 METHOD AND DEVICE FOR METAL COATING BY DEPOSIT IN THE FORM OF VAPORS

Country Status (4)

Country Link
JP (1) JPS54163793A (en)
FR (1) FR2426743A1 (en)
GB (1) GB1594399A (en)
IT (1) IT1192727B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (en) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd Preparation of aluminum film
DE3666230D1 (en) * 1985-05-03 1989-11-16 American Telephone & Telegraph Method of making a device comprising a patterned aluminum layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
FR1210117A (en) * 1958-09-02 1960-03-07 Ohio Commw Eng Co Aluminum deposition from a gaseous compound, in particular aluminum triisobutyl
FR1405106A (en) * 1964-08-26 1965-07-02 Union Carbide Corp Process for depositing metal coatings in holes, tubes, slots, cracks and other similar cavities

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
FR1210117A (en) * 1958-09-02 1960-03-07 Ohio Commw Eng Co Aluminum deposition from a gaseous compound, in particular aluminum triisobutyl
FR1405106A (en) * 1964-08-26 1965-07-02 Union Carbide Corp Process for depositing metal coatings in holes, tubes, slots, cracks and other similar cavities

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *

Also Published As

Publication number Publication date
IT7922732A0 (en) 1979-05-17
JPS54163793A (en) 1979-12-26
GB1594399A (en) 1981-07-30
FR2426743B1 (en) 1983-08-26
JPS641550B2 (en) 1989-01-11
IT1192727B (en) 1988-05-04

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Legal Events

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