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FR2412949B1 - - Google Patents

Info

Publication number
FR2412949B1
FR2412949B1 FR7739159A FR7739159A FR2412949B1 FR 2412949 B1 FR2412949 B1 FR 2412949B1 FR 7739159 A FR7739159 A FR 7739159A FR 7739159 A FR7739159 A FR 7739159A FR 2412949 B1 FR2412949 B1 FR 2412949B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7739159A
Other languages
French (fr)
Other versions
FR2412949A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gouvernement de la Republique Francaise
Original Assignee
Gouvernement de la Republique Francaise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gouvernement de la Republique Francaise filed Critical Gouvernement de la Republique Francaise
Priority to FR7739159A priority Critical patent/FR2412949A1/en
Publication of FR2412949A1 publication Critical patent/FR2412949A1/en
Application granted granted Critical
Publication of FR2412949B1 publication Critical patent/FR2412949B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
FR7739159A 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised Granted FR2412949A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7739159A FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739159A FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Publications (2)

Publication Number Publication Date
FR2412949A1 FR2412949A1 (en) 1979-07-20
FR2412949B1 true FR2412949B1 (en) 1980-06-13

Family

ID=9199325

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739159A Granted FR2412949A1 (en) 1977-12-26 1977-12-26 Solenoid magnetic field semiconductor detector - has magneto-diode with one surface contacting Schottky diode which is inversely polarised

Country Status (1)

Country Link
FR (1) FR2412949A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425573A (en) 1978-05-19 1984-01-10 Siemens Aktiengesellschaft Metal-semiconductor-field effect transistor (MESFET) with lightly doped drain contact region for higher voltage breakdown

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH662905A5 (en) * 1983-12-19 1987-10-30 Landis & Gyr Ag INTEGRATED HALL ELEMENT.
WO2006028427A1 (en) * 2004-09-09 2006-03-16 Inessa Antonovna Bolshakova Magnetic field measuring sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572426A (en) * 1967-04-26 1969-06-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425573A (en) 1978-05-19 1984-01-10 Siemens Aktiengesellschaft Metal-semiconductor-field effect transistor (MESFET) with lightly doped drain contact region for higher voltage breakdown

Also Published As

Publication number Publication date
FR2412949A1 (en) 1979-07-20

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Legal Events

Date Code Title Description
ST Notification of lapse