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FR2455921A2 - Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps - Google Patents

Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

Info

Publication number
FR2455921A2
FR2455921A2 FR7911607A FR7911607A FR2455921A2 FR 2455921 A2 FR2455921 A2 FR 2455921A2 FR 7911607 A FR7911607 A FR 7911607A FR 7911607 A FR7911607 A FR 7911607A FR 2455921 A2 FR2455921 A2 FR 2455921A2
Authority
FR
France
Prior art keywords
melting
plasma jet
zone
prepn
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7911607A
Other languages
French (fr)
Other versions
FR2455921B2 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7911607A priority Critical patent/FR2455921A2/en
Publication of FR2455921A2 publication Critical patent/FR2455921A2/en
Application granted granted Critical
Publication of FR2455921B2 publication Critical patent/FR2455921B2/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The parent patent described a method of preparing crystals esp. Si by zone melting in which a polycrystalline ingot is placed in a boat, fused by a plasma jet and then the boat is displaced w.r.t. the plasma. In this addition, the ingot is pickled in acid between two such plasma fusion treatments. The heat necessary to fuse the zone is provided with a plasma jet at 10000-15000 K. The temp. distribution inside the molten zone is rotated about the axis of the plasma jet with max. at the surface and a min. at the lower part which is in contact with the boat. Improved purificn. is achieved.
FR7911607A 1979-05-08 1979-05-08 Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps Granted FR2455921A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7911607A FR2455921A2 (en) 1979-05-08 1979-05-08 Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7911607A FR2455921A2 (en) 1979-05-08 1979-05-08 Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

Publications (2)

Publication Number Publication Date
FR2455921A2 true FR2455921A2 (en) 1980-12-05
FR2455921B2 FR2455921B2 (en) 1982-10-08

Family

ID=9225187

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7911607A Granted FR2455921A2 (en) 1979-05-08 1979-05-08 Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

Country Status (1)

Country Link
FR (1) FR2455921A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2996374A (en) * 1958-11-13 1961-08-15 Texas Instruments Inc Method of zone refining for impurities having segregation coefficients greater than unity
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
FR2171417A1 (en) * 1972-02-09 1973-09-21 Vysoka Skola Banska Ostrava

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
US2996374A (en) * 1958-11-13 1961-08-15 Texas Instruments Inc Method of zone refining for impurities having segregation coefficients greater than unity
FR2171417A1 (en) * 1972-02-09 1973-09-21 Vysoka Skola Banska Ostrava

Also Published As

Publication number Publication date
FR2455921B2 (en) 1982-10-08

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