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FR2335046A1 - Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede - Google Patents

Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede

Info

Publication number
FR2335046A1
FR2335046A1 FR7538109A FR7538109A FR2335046A1 FR 2335046 A1 FR2335046 A1 FR 2335046A1 FR 7538109 A FR7538109 A FR 7538109A FR 7538109 A FR7538109 A FR 7538109A FR 2335046 A1 FR2335046 A1 FR 2335046A1
Authority
FR
France
Prior art keywords
devices
junction
manufacturing semiconductor
collective
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7538109A
Other languages
English (en)
Other versions
FR2335046B1 (fr
Inventor
Raymond Henry
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7538109A priority Critical patent/FR2335046A1/fr
Priority to GB51551/76A priority patent/GB1558514A/en
Priority to US05/748,879 priority patent/US4097986A/en
Priority to JP51149659A priority patent/JPS5940309B2/ja
Publication of FR2335046A1 publication Critical patent/FR2335046A1/fr
Application granted granted Critical
Publication of FR2335046B1 publication Critical patent/FR2335046B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
FR7538109A 1975-12-12 1975-12-12 Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede Granted FR2335046A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7538109A FR2335046A1 (fr) 1975-12-12 1975-12-12 Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede
GB51551/76A GB1558514A (en) 1975-12-12 1976-12-09 Manufacturing process for the simultaneous production of semiconductor devices
US05/748,879 US4097986A (en) 1975-12-12 1976-12-09 Manufacturing process for the collective production of semiconductive junction devices
JP51149659A JPS5940309B2 (ja) 1975-12-12 1976-12-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7538109A FR2335046A1 (fr) 1975-12-12 1975-12-12 Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede

Publications (2)

Publication Number Publication Date
FR2335046A1 true FR2335046A1 (fr) 1977-07-08
FR2335046B1 FR2335046B1 (fr) 1979-06-01

Family

ID=9163681

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538109A Granted FR2335046A1 (fr) 1975-12-12 1975-12-12 Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede

Country Status (4)

Country Link
US (1) US4097986A (fr)
JP (1) JPS5940309B2 (fr)
FR (1) FR2335046A1 (fr)
GB (1) GB1558514A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893403A (en) * 1988-04-15 1990-01-16 Hewlett-Packard Company Chip alignment method
DE4209842A1 (de) * 1992-03-26 1993-09-30 Licentia Gmbh Verfahren zum Herstellen einer flächigen Photodiodennanordnung
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
TW335595B (en) * 1996-09-09 1998-07-01 Philips Electronics Nv Electric component which can be mounted on the surface of a printed circuit board as well as a method of manufacturiing such components
FR2758888B1 (fr) * 1997-01-27 1999-04-23 Thomson Csf Procede de modelisation fine du fouillis de sol recu par un radar
US7250347B2 (en) * 2005-01-28 2007-07-31 International Business Machines Corporation Double-gate FETs (Field Effect Transistors)
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2160759A1 (fr) * 1971-11-26 1973-07-06 Thomson Csf

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
JPS4864887A (fr) * 1971-11-26 1973-09-07
US3895429A (en) * 1974-05-09 1975-07-22 Rca Corp Method of making a semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2160759A1 (fr) * 1971-11-26 1973-07-06 Thomson Csf

Also Published As

Publication number Publication date
JPS5940309B2 (ja) 1984-09-29
FR2335046B1 (fr) 1979-06-01
US4097986A (en) 1978-07-04
JPS5272584A (en) 1977-06-17
GB1558514A (en) 1980-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse