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FR2380639A2 - N-CHANNEL MEMORIZATION FIELD EFFECT TRANSISTOR - Google Patents

N-CHANNEL MEMORIZATION FIELD EFFECT TRANSISTOR

Info

Publication number
FR2380639A2
FR2380639A2 FR7802924A FR7802924A FR2380639A2 FR 2380639 A2 FR2380639 A2 FR 2380639A2 FR 7802924 A FR7802924 A FR 7802924A FR 7802924 A FR7802924 A FR 7802924A FR 2380639 A2 FR2380639 A2 FR 2380639A2
Authority
FR
France
Prior art keywords
field effect
effect transistor
channel
layer
memorization field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7802924A
Other languages
French (fr)
Other versions
FR2380639B2 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2643932A external-priority patent/DE2643932C2/en
Priority claimed from DE2643987A external-priority patent/DE2643987C2/en
Priority claimed from DE19772706205 external-priority patent/DE2706205A1/en
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2380639A2 publication Critical patent/FR2380639A2/en
Application granted granted Critical
Publication of FR2380639B2 publication Critical patent/FR2380639B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)

Abstract

L'invention concerne un transistor à effet de champ de mémorisation à canal n. Ce transistor est constitué sous la forme d'un transistor D-MOS à effet de champ comportant une source (N+) et une couche diffusée (P) dans un substrat semi-conducteur (N-) ainsi qu'une porte de mémorisation (G1) et une porte de commande (G2) isolées par une couche de SiO2 et la distance r entre le canal et le raccord de drain (N+) est approximativement égale ou supérieure à l'épaisseur de la couche (P). Application notamment aux mémoires utilisées dans des installations de téléphonie.An n-channel storage field effect transistor is disclosed. This transistor is formed in the form of a D-MOS field effect transistor comprising a source (N +) and a diffused layer (P) in a semiconductor substrate (N-) as well as a storage gate (G1 ) and a control gate (G2) isolated by a layer of SiO2 and the distance r between the channel and the drain connection (N +) is approximately equal to or greater than the thickness of the layer (P). Application in particular to memories used in telephony installations.

FR7802924A 1976-09-29 1978-02-02 N-CHANNEL MEMORIZATION FIELD EFFECT TRANSISTOR Granted FR2380639A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2643932A DE2643932C2 (en) 1974-09-20 1976-09-29 n-channel memory FET
DE2643987A DE2643987C2 (en) 1974-09-20 1976-09-29 n-channel memory FET
DE19772706205 DE2706205A1 (en) 1977-02-14 1977-02-14 N-CHANNEL MEMORY FET

Publications (2)

Publication Number Publication Date
FR2380639A2 true FR2380639A2 (en) 1978-09-08
FR2380639B2 FR2380639B2 (en) 1983-01-21

Family

ID=32096460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7802924A Granted FR2380639A2 (en) 1976-09-29 1978-02-02 N-CHANNEL MEMORIZATION FIELD EFFECT TRANSISTOR

Country Status (1)

Country Link
FR (1) FR2380639A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464536A1 (en) * 1979-09-04 1981-03-06 Texas Instruments Inc FLOATING GRID SEMICONDUCTOR MEMORY, ELECTRICALLY PROGRAMMABLE, AND METHOD OF MANUFACTURING THE SAME
EP0205637A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Trapped charge bidirectional power fet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2033346A1 (en) * 1969-02-17 1970-12-04 Hughes Aircraft Co
FR2236247A1 (en) * 1973-07-05 1975-01-31 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2033346A1 (en) * 1969-02-17 1970-12-04 Hughes Aircraft Co
FR2236247A1 (en) * 1973-07-05 1975-01-31 Tokyo Shibaura Electric Co

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/77 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464536A1 (en) * 1979-09-04 1981-03-06 Texas Instruments Inc FLOATING GRID SEMICONDUCTOR MEMORY, ELECTRICALLY PROGRAMMABLE, AND METHOD OF MANUFACTURING THE SAME
EP0205637A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Trapped charge bidirectional power fet

Also Published As

Publication number Publication date
FR2380639B2 (en) 1983-01-21

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