FR2371705A1 - Procede de suppression des couches d'un materiau organique formees sur un substrat - Google Patents
Procede de suppression des couches d'un materiau organique formees sur un substratInfo
- Publication number
- FR2371705A1 FR2371705A1 FR7731531A FR7731531A FR2371705A1 FR 2371705 A1 FR2371705 A1 FR 2371705A1 FR 7731531 A FR7731531 A FR 7731531A FR 7731531 A FR7731531 A FR 7731531A FR 2371705 A1 FR2371705 A1 FR 2371705A1
- Authority
- FR
- France
- Prior art keywords
- persulphate
- conc
- sulphuric acid
- polymers
- sensitised
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 title abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title abstract 4
- 235000011149 sulphuric acid Nutrition 0.000 title abstract 4
- 239000001117 sulphuric acid Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229920000642 polymer Polymers 0.000 abstract 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 abstract 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 229930003836 cresol Natural products 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- WGXGKXTZIQFQFO-CMDGGOBGSA-N ethenyl (e)-3-phenylprop-2-enoate Chemical compound C=COC(=O)\C=C\C1=CC=CC=C1 WGXGKXTZIQFQFO-CMDGGOBGSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 abstract 1
- 239000012044 organic layer Substances 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract 1
- 229920002492 poly(sulfone) Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Procédé de suppression des couches d'un matériau organique formées sur un substrat. Un matériau organique, tel qu'un matériau photorésistant du type organique polymérisé est éliminé de la surface d'un substrat en traitant les couches par une solution de persulfate dans de l'acide sulfurique concentré. Cette solution est un agent de décapage efficace et qui évite les problèmes de pollution et limite les dangers dûs à la manipulation, trouve à s'appliquer de façon générale dans l'industrie de la fabrication des dispositifs integrés à semi-conducteurs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74319076A | 1976-11-19 | 1976-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2371705A1 true FR2371705A1 (fr) | 1978-06-16 |
| FR2371705B1 FR2371705B1 (fr) | 1980-12-19 |
Family
ID=24987844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7731531A Granted FR2371705A1 (fr) | 1976-11-19 | 1977-10-07 | Procede de suppression des couches d'un materiau organique formees sur un substrat |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | UST973008I4 (fr) |
| JP (1) | JPS5364769A (fr) |
| DE (1) | DE2747669A1 (fr) |
| FR (1) | FR2371705A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009026324A2 (fr) | 2007-08-20 | 2009-02-26 | Advanced Technology Materials, Inc. | Composition et procédé pour retirer un photorésist à implantation ionique |
| EP2288965A4 (fr) * | 2008-05-01 | 2011-08-10 | Advanced Tech Materials | Mélanges à ph bas pour l élimination de réserve implantée à haute densité |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4678597A (en) | 1986-03-17 | 1987-07-07 | Am International, Inc. | Chemical cleaning solution and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE277834C (fr) * |
-
1977
- 1977-10-07 FR FR7731531A patent/FR2371705A1/fr active Granted
- 1977-10-19 JP JP12465077A patent/JPS5364769A/ja active Pending
- 1977-10-25 DE DE19772747669 patent/DE2747669A1/de not_active Withdrawn
- 1977-12-09 US US05/858,985 patent/UST973008I4/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE277834C (fr) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009026324A2 (fr) | 2007-08-20 | 2009-02-26 | Advanced Technology Materials, Inc. | Composition et procédé pour retirer un photorésist à implantation ionique |
| EP2190967A4 (fr) * | 2007-08-20 | 2010-10-13 | Advanced Tech Materials | Composition et procédé pour retirer un photorésist à implantation ionique |
| EP2288965A4 (fr) * | 2008-05-01 | 2011-08-10 | Advanced Tech Materials | Mélanges à ph bas pour l élimination de réserve implantée à haute densité |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5364769A (en) | 1978-06-09 |
| UST973008I4 (en) | 1978-08-01 |
| FR2371705B1 (fr) | 1980-12-19 |
| DE2747669A1 (de) | 1978-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |