FR2361304A1 - POLYCRYSTALLINE SILICON DEPOSIT PROCESS - Google Patents
POLYCRYSTALLINE SILICON DEPOSIT PROCESSInfo
- Publication number
- FR2361304A1 FR2361304A1 FR7712732A FR7712732A FR2361304A1 FR 2361304 A1 FR2361304 A1 FR 2361304A1 FR 7712732 A FR7712732 A FR 7712732A FR 7712732 A FR7712732 A FR 7712732A FR 2361304 A1 FR2361304 A1 FR 2361304A1
- Authority
- FR
- France
- Prior art keywords
- polycrystalline silicon
- deposit process
- silicon deposit
- silicon
- support parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000002231 Czochralski process Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
La présente invention concerne un procédé de dépôt de silicium polycristallin, à partir d'une phase gazeuse, sur des pièces supports en carbone. Le procédé selon l'invention est essentiellement caractérisé en ce que lesdites pièces supports sont assemblées à partir d'éléments souples planiformes en carbone, d'épaisseur comprise entre 0,1 et 2 mm On peut utiliser le silicium ainsi produit, après broyage, pour la production de silicium monocristallin par le procède de Czochralski, par fusion de zone avec tirage et creusetThe present invention relates to a method for depositing polycrystalline silicon, from a gas phase, on carbon support parts. The method according to the invention is essentially characterized in that said support parts are assembled from flexible planiform elements made of carbon, with a thickness of between 0.1 and 2 mm. The silicon thus produced can be used, after grinding, for the production of monocrystalline silicon by the Czochralski process, by zone melting with pulling and crucible
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762618273 DE2618273C3 (en) | 1976-04-27 | 1976-04-27 | Process for the deposition of polycrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2361304A1 true FR2361304A1 (en) | 1978-03-10 |
| FR2361304B1 FR2361304B1 (en) | 1981-01-09 |
Family
ID=5976298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7712732A Granted FR2361304A1 (en) | 1976-04-27 | 1977-04-27 | POLYCRYSTALLINE SILICON DEPOSIT PROCESS |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS52155142A (en) |
| BE (1) | BE853997A (en) |
| CA (1) | CA1092905A (en) |
| DE (1) | DE2618273C3 (en) |
| FR (1) | FR2361304A1 (en) |
| GB (1) | GB1569651A (en) |
| IT (1) | IT1086646B (en) |
| NL (1) | NL7702613A (en) |
| SE (1) | SE7704805L (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006110481A3 (en) * | 2005-04-10 | 2007-04-05 | Rec Silicon Inc | Production of polycrystalline silicon |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354580A (en) * | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1391792A (en) * | 1962-12-19 | 1965-03-12 | Thomson Houston Comp Francaise | Improvements to processes for forming a sheet material, in particular for pyrolytic graphite sheets |
| DE1272801B (en) * | 1965-07-14 | 1968-07-11 | Hitco Cardena | Process for charring cellulosic fibrous material |
| DE2022025C3 (en) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for producing a hollow body from semiconductor material |
| GB1292534A (en) * | 1970-06-04 | 1972-10-11 | Pfizer | Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties |
| DE2229229A1 (en) * | 1972-06-15 | 1974-01-10 | Siemens Ag | PROCESS FOR PRODUCING MOLDED BODIES FROM SILICON OR SILICON CARBIDE |
-
1976
- 1976-04-27 DE DE19762618273 patent/DE2618273C3/en not_active Expired
-
1977
- 1977-03-08 CA CA273,378A patent/CA1092905A/en not_active Expired
- 1977-03-10 NL NL7702613A patent/NL7702613A/en not_active Application Discontinuation
- 1977-04-22 IT IT4907877A patent/IT1086646B/en active
- 1977-04-25 GB GB1708777A patent/GB1569651A/en not_active Expired
- 1977-04-26 SE SE7704805A patent/SE7704805L/en not_active Application Discontinuation
- 1977-04-27 JP JP4899777A patent/JPS52155142A/en active Granted
- 1977-04-27 BE BE177052A patent/BE853997A/en not_active IP Right Cessation
- 1977-04-27 FR FR7712732A patent/FR2361304A1/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006110481A3 (en) * | 2005-04-10 | 2007-04-05 | Rec Silicon Inc | Production of polycrystalline silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7702613A (en) | 1977-10-31 |
| BE853997A (en) | 1977-10-27 |
| DE2618273A1 (en) | 1977-11-03 |
| DE2618273C3 (en) | 1984-04-19 |
| IT1086646B (en) | 1985-05-28 |
| GB1569651A (en) | 1980-06-18 |
| SE7704805L (en) | 1977-10-28 |
| CA1092905A (en) | 1981-01-06 |
| DE2618273B2 (en) | 1978-11-09 |
| JPS52155142A (en) | 1977-12-23 |
| JPS5635604B2 (en) | 1981-08-18 |
| FR2361304B1 (en) | 1981-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE180023T1 (en) | EPITACTIC GROWING OF SILICON CARBID AND SILICON CARBID STRUCTURES PRODUCED IN THIS WAY | |
| TW278203B (en) | Method for preparing molten silicon melt from polycrystalline silicon | |
| GB1213867A (en) | Method of manufacturing silicon carbide single crystal filaments | |
| GB1490665A (en) | Method of growing epitaxial layers of silicon | |
| GB1375772A (en) | ||
| GB1438877A (en) | Silicon or silicon carbide holders for use in diffusion operations | |
| KR950003483A (en) | Method for manufacturing a semiconductor material rod or block expanded by solidification by crystallization of a melt produced from granular material, and apparatus for performing the method | |
| FR2392137A1 (en) | PROCESS FOR MANUFACTURING LARGE SURFACE SILICON PARTS FIXED TO A SUBSTRATE | |
| FR2361304A1 (en) | POLYCRYSTALLINE SILICON DEPOSIT PROCESS | |
| GB1520500A (en) | Process for manufacturing semi-conductors | |
| JPS55104999A (en) | Production of silicon carbide crystal layer | |
| TW200745389A (en) | Method for manufacturing single crystal | |
| EP0390671A3 (en) | Process for determination of concentrations of metal impurities in czochralski single crystal silicon | |
| US2995439A (en) | Preparation of high purity chromium and other metals | |
| JPS55104998A (en) | Production of silicon carbide crystal layer | |
| FR2362215A1 (en) | NICKELING PROCESS AND DEVICE | |
| RU94000685A (en) | MELTING DEVICE FOR CULTIVATION OF CRYSTALS FROM MELTING | |
| GB1524523A (en) | Device for controlling the diameter of a growing crystal | |
| Ravi et al. | Low cost silicon solar arrays | |
| GB804268A (en) | Improvements in and relating to refractory containers | |
| CHU | Development of low-cost thin film polycrystalline silicon solar cells for terrestrial applications[Quarterly Progress Report, 1 Jul.- 30 Sep. 1975] | |
| JPS55126596A (en) | Production of single crystal | |
| Sinelnikova et al. | Single Crystals of Titanium Carbide and Their Certain Properties | |
| UA31812A (en) | METHOD for solid solution of PBTE-SNTE PRODUCTION | |
| JPS533902A (en) | Production of silicon crystal membrane |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |