FR2108499A5 - - Google Patents

Info

Publication number: FR2108499A5
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR7134385A

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Varian Medical Systems Inc

Original Assignee

Varian Associates Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-09-24

Filing date

1971-09-24

Publication date

1972-05-19

1971-09-24 Application filed by Varian Associates Inc filed Critical Varian Associates Inc

1972-05-19 Application granted granted Critical

1972-05-19 Publication of FR2108499A5 publication Critical patent/FR2108499A5/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

FR7134385A 1970-09-24 1971-09-24 Expired FR2108499A5 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US00075001A US3810794A (en)	1970-09-24	1970-09-24	Preparation of gap-si heterojunction by liquid phase epitaxy

Publications (1)

Publication Number	Publication Date
FR2108499A5 true FR2108499A5 (fr)	1972-05-19

Family

ID=22122925

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7134385A Expired FR2108499A5 (fr)	1970-09-24	1971-09-24

Country Status (5)

Country	Link
US (1)	US3810794A (fr)
DE (1)	DE2144828A1 (fr)
FR (1)	FR2108499A5 (fr)
GB (1)	GB1332389A (fr)
NL (1)	NL7113128A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4128440A (en) *	1978-04-24	1978-12-05	General Electric Company	Liquid phase epitaxial method of covering buried regions for devices
US4591408A (en) *	1982-11-16	1986-05-27	Stauffer Chemical Company	Liquid phase growth of crystalline polyphosphide
WO1987007313A1 (fr) *	1986-05-28	1987-12-03	Massachusetts Institute Of Technology	Croissance epitaxiale
US4764350A (en) *	1986-10-08	1988-08-16	The United States Of America As Represented By The Secretary Of The Air Force	Method and apparatus for synthesizing a single crystal of indium phosphide
US5057287A (en) *	1988-11-01	1991-10-15	Sfa, Inc.	Liquid encapsulated zone melting crystal growth method and apparatus
JP2678405B2 (ja) *	1991-02-13	1997-11-17	株式会社小糸製作所	自動車用放電灯の点灯装置
DE4310612C1 (de) *	1993-03-31	1994-11-10	Max Planck Gesellschaft	Flüssigphasen-Heteroepitaxieverfahren

1970
- 1970-09-24 US US00075001A patent/US3810794A/en not_active Expired - Lifetime
1971
- 1971-09-03 GB GB4114571A patent/GB1332389A/en not_active Expired
- 1971-09-08 DE DE19712144828 patent/DE2144828A1/de active Pending
- 1971-09-23 NL NL7113128A patent/NL7113128A/xx unknown
- 1971-09-24 FR FR7134385A patent/FR2108499A5/fr not_active Expired

Also Published As

Publication number	Publication date
US3810794A (en)	1974-05-14
NL7113128A (fr)	1972-03-28
GB1332389A (en)	1973-10-03
DE2144828A1 (de)	1972-03-30

Publication	Publication Date	Title
AU1146470A (fr)	1971-08-19
AU1473870A (fr)	1971-11-11
AU2044470A (fr)	1972-03-30
AU2130570A (fr)	1972-04-27
AU1517670A (fr)	1971-11-18
AU2085370A (fr)	1972-04-13
AU1716970A (fr)	1972-01-06
AU1833270A (fr)	1972-02-10
AU2017870A (fr)	1972-03-23
AU1872870A (fr)	1972-02-17
AU2130770A (fr)	1972-04-27
AU1881070A (fr)	1972-02-17
AU1943370A (fr)	1972-03-09
AU1789870A (fr)	1972-01-27
AU1974970A (fr)	1972-03-16
AU2061170A (fr)	1972-04-13
AU1841070A (fr)	1972-02-10
AU1689770A (fr)	1972-01-06
AU1879170A (fr)	1972-02-17
AU1969370A (fr)	1972-03-16
AU1832970A (fr)	1972-02-03
AU2112570A (fr)	1972-04-20
AU2115870A (fr)	1972-04-20
AU2119370A (fr)	1972-04-20
AU1918570A (fr)	1972-03-02

Legal Events

Date	Code	Title	Description
1975-11-14	ST	Notification of lapse