FR2012133A1 - - Google Patents
Info
- Publication number
- FR2012133A1 FR2012133A1 FR6918094A FR6918094A FR2012133A1 FR 2012133 A1 FR2012133 A1 FR 2012133A1 FR 6918094 A FR6918094 A FR 6918094A FR 6918094 A FR6918094 A FR 6918094A FR 2012133 A1 FR2012133 A1 FR 2012133A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74202568A | 1968-07-02 | 1968-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2012133A1 true FR2012133A1 (fr) | 1970-03-13 |
Family
ID=24983198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR6918094A Pending FR2012133A1 (fr) | 1968-07-02 | 1969-06-04 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3549368A (fr) |
| CA (1) | CA918483A (fr) |
| FR (1) | FR2012133A1 (fr) |
| GB (1) | GB1262513A (fr) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3779774A (en) * | 1972-05-09 | 1973-12-18 | Xidex Corp | Silicone surfactants for vesicular films |
| FR2193864B1 (fr) * | 1972-07-31 | 1974-12-27 | Rhone Poulenc Sa | |
| US4103045A (en) * | 1972-07-31 | 1978-07-25 | Rhone-Poulenc, S.A. | Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides |
| JPS5525418B2 (fr) * | 1972-12-20 | 1980-07-05 | ||
| JPS53292B2 (fr) * | 1974-02-01 | 1978-01-07 | ||
| US3962004A (en) * | 1974-11-29 | 1976-06-08 | Rca Corporation | Pattern definition in an organic layer |
| US4075367A (en) * | 1976-03-18 | 1978-02-21 | Ncr Corporation | Semiconductor processing of silicon nitride |
| US4173683A (en) * | 1977-06-13 | 1979-11-06 | Rca Corporation | Chemically treating the overcoat of a semiconductor device |
| US4330569A (en) * | 1979-05-25 | 1982-05-18 | Ncr Corporation | Method for conditioning nitride surface |
| CA1184321A (fr) * | 1981-06-30 | 1985-03-19 | John C. Marinace | Adhesion d'un photoresist a un substrat |
| US4524126A (en) * | 1981-06-30 | 1985-06-18 | International Business Machines Corporation | Adhesion of a photoresist to a substrate |
| US4409319A (en) * | 1981-07-15 | 1983-10-11 | International Business Machines Corporation | Electron beam exposed positive resist mask process |
| US4491629A (en) * | 1982-02-22 | 1985-01-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Water soluble photoresist composition with bisazide, diazo, polymer and silane |
| EP0104235A4 (fr) * | 1982-03-29 | 1984-09-14 | Motorola Inc | Procede de formation d'un materiau de protection lithographique hybride a rayon electronique/optique. |
| US4431685A (en) * | 1982-07-02 | 1984-02-14 | International Business Machines Corporation | Decreasing plated metal defects |
| US4464458A (en) * | 1982-12-30 | 1984-08-07 | International Business Machines Corporation | Process for forming resist masks utilizing O-quinone diazide and pyrene |
| US4497890A (en) * | 1983-04-08 | 1985-02-05 | Motorola, Inc. | Process for improving adhesion of resist to gold |
| US4535054A (en) * | 1983-05-05 | 1985-08-13 | Hughes Aircraft Company | Wet process for developing styrene polymer resists for submicron lithography |
| JPS60147729A (ja) * | 1984-01-12 | 1985-08-03 | Toshiba Corp | ホトレジスト組成物 |
| US4592926A (en) * | 1984-05-21 | 1986-06-03 | Machine Technology, Inc. | Processing apparatus and method |
| JPS61248035A (ja) * | 1985-04-26 | 1986-11-05 | Nippon Zeon Co Ltd | 密着性の改良されたホトレジスト組成物 |
| US4806458A (en) * | 1985-10-28 | 1989-02-21 | Hoechst Celanese Corporation | Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate |
| US4692398A (en) * | 1985-10-28 | 1987-09-08 | American Hoechst Corporation | Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate |
| JPS62129846A (ja) * | 1985-12-02 | 1987-06-12 | Dainippon Screen Mfg Co Ltd | フオトレジストの塗布方法及び塗布装置 |
| US4976817A (en) * | 1988-12-09 | 1990-12-11 | Morton International, Inc. | Wet lamination process and apparatus |
| US5429673A (en) * | 1993-10-01 | 1995-07-04 | Silicon Resources, Inc. | Binary vapor adhesion promoters and methods of using the same |
| US5582703A (en) * | 1994-12-12 | 1996-12-10 | Palomar Technologies Corporation | Method of fabricating an ultra-high resolution three-color screen |
| DE69612265T2 (de) * | 1995-12-04 | 2001-07-12 | Matsushita Electric Industrial Co., Ltd. | Erzeugungsverfahren für Muster |
| US5578505A (en) * | 1995-12-15 | 1996-11-26 | Micron Technology, Inc. | Methods for measuring the surface area of a semiconductor wafer |
| US6387719B1 (en) | 2001-02-28 | 2002-05-14 | Lexmark International, Inc. | Method for improving adhesion |
| US7851138B2 (en) | 2007-07-19 | 2010-12-14 | Hitachi Global Storage Technologies, Netherlands, B.V. | Patterning a surface comprising silicon and carbon |
| US9953952B2 (en) * | 2008-08-20 | 2018-04-24 | Infineon Technologies Ag | Semiconductor device having a sealant layer including carbon directly contact the chip and the carrier |
| US9012133B2 (en) | 2011-08-30 | 2015-04-21 | International Business Machines Corporation | Removal of alkaline crystal defects in lithographic patterning |
| US9409139B2 (en) | 2013-08-05 | 2016-08-09 | Twist Bioscience Corporation | De novo synthesized gene libraries |
| CA3253836A1 (en) | 2015-02-04 | 2025-12-01 | Twist Bioscience Corp | Compositions and methods for synthetic gene assembly |
| CA2975852A1 (fr) | 2015-02-04 | 2016-08-11 | Twist Bioscience Corporation | Procedes et dispositifs pour assemblage de novo d'acide oligonucleique |
| JP6699256B2 (ja) * | 2015-03-16 | 2020-05-27 | 大日本印刷株式会社 | インプリントモールド製造用基材とインプリントモールドの製造方法 |
| WO2016172377A1 (fr) | 2015-04-21 | 2016-10-27 | Twist Bioscience Corporation | Dispositifs et procédés pour la synthèse de banques d'acides oligonucléiques |
| AU2016324296A1 (en) | 2015-09-18 | 2018-04-12 | Twist Bioscience Corporation | Oligonucleic acid variant libraries and synthesis thereof |
| CN108698012A (zh) | 2015-09-22 | 2018-10-23 | 特韦斯特生物科学公司 | 用于核酸合成的柔性基底 |
| GB201517629D0 (en) * | 2015-10-06 | 2015-11-18 | Isis Innovation | Device architecture |
| CN108603307A (zh) | 2015-12-01 | 2018-09-28 | 特韦斯特生物科学公司 | 功能化表面及其制备 |
| US10177001B2 (en) | 2016-05-31 | 2019-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface modifying material for semiconductor device fabrication |
| CA3034769A1 (fr) | 2016-08-22 | 2018-03-01 | Twist Bioscience Corporation | Banques d'acides nucleiques synthetises de novo |
| CN110248724B (zh) | 2016-09-21 | 2022-11-18 | 特韦斯特生物科学公司 | 基于核酸的数据存储 |
| CN110366613A (zh) | 2016-12-16 | 2019-10-22 | 特韦斯特生物科学公司 | 免疫突触的变体文库及其合成 |
| US10096477B2 (en) | 2017-02-15 | 2018-10-09 | International Business Machines Corporation | Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography |
| WO2018156792A1 (fr) | 2017-02-22 | 2018-08-30 | Twist Bioscience Corporation | Stockage de données reposant sur un acide nucléique |
| CN110913865A (zh) | 2017-03-15 | 2020-03-24 | 特韦斯特生物科学公司 | 免疫突触的变体文库及其合成 |
| IL271205B2 (en) | 2017-06-12 | 2025-02-01 | Twist Bioscience Corp | Methods for assembling continuous nucleic acids |
| WO2018231864A1 (fr) | 2017-06-12 | 2018-12-20 | Twist Bioscience Corporation | Méthodes d'assemblage d'acides nucléiques continus |
| US11407837B2 (en) | 2017-09-11 | 2022-08-09 | Twist Bioscience Corporation | GPCR binding proteins and synthesis thereof |
| KR102637566B1 (ko) | 2017-10-20 | 2024-02-16 | 트위스트 바이오사이언스 코포레이션 | 폴리뉴클레오타이드 합성을 위한 가열된 나노웰 |
| CN112041438B (zh) | 2018-01-04 | 2025-05-23 | 特韦斯特生物科学公司 | 基于dna的数字信息存储 |
| CA3100739A1 (fr) | 2018-05-18 | 2019-11-21 | Twist Bioscience Corporation | Polynucleotides, reactifs, et procedes d'hybridation d'acides nucleiques |
| US11031244B2 (en) * | 2018-08-14 | 2021-06-08 | Lam Research Corporation | Modification of SNO2 surface for EUV lithography |
| CA3124980A1 (fr) | 2018-12-26 | 2020-07-02 | Twist Bioscience Corporation | Synthese de novo polynucleotidique hautement precise |
| CN113785057A (zh) | 2019-02-26 | 2021-12-10 | 特韦斯特生物科学公司 | 用于抗体优化的变异核酸文库 |
| KR20210143766A (ko) | 2019-02-26 | 2021-11-29 | 트위스트 바이오사이언스 코포레이션 | Glp1 수용체에 대한 변이체 핵산 라이브러리 |
| JP2022550497A (ja) | 2019-06-21 | 2022-12-02 | ツイスト バイオサイエンス コーポレーション | バーコードに基づいた核酸配列アセンブリ |
| AU2020355027A1 (en) | 2019-09-23 | 2022-04-21 | Twist Bioscience Corporation | Antibodies that bind CD3 Epsilon |
| CA3155629A1 (fr) | 2019-09-23 | 2021-04-01 | Twist Bioscience Corporation | Banques d'acides nucleiques variants pour crth2 |
| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3163534A (en) * | 1961-03-13 | 1964-12-29 | Harris Intertype Corp | Lithographic plate including a hydrophilic barrier layer comprising a silane, an acrylic compound, and an organic metal ester |
| US3398210A (en) * | 1963-06-17 | 1968-08-20 | Dow Corning | Compositions comprising acryloxyalkylsilanes and unsaturated polyester resins |
| US3405017A (en) * | 1965-02-26 | 1968-10-08 | Hughes Aircraft Co | Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry |
| US3482977A (en) * | 1966-02-11 | 1969-12-09 | Sylvania Electric Prod | Method of forming adherent masks on oxide coated semiconductor bodies |
-
1968
- 1968-07-02 US US742025A patent/US3549368A/en not_active Expired - Lifetime
-
1969
- 1969-06-04 FR FR6918094A patent/FR2012133A1/fr active Pending
- 1969-06-23 GB GB31561/69A patent/GB1262513A/en not_active Expired
- 1969-06-23 CA CA055027A patent/CA918483A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA918483A (en) | 1973-01-09 |
| DE1915085A1 (de) | 1970-03-05 |
| GB1262513A (en) | 1972-02-02 |
| US3549368A (en) | 1970-12-22 |
| DE1915085B2 (de) | 1976-05-26 |