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FR2066947A1 - - Google Patents

Info

Publication number
FR2066947A1
FR2066947A1 FR7039096A FR7039096A FR2066947A1 FR 2066947 A1 FR2066947 A1 FR 2066947A1 FR 7039096 A FR7039096 A FR 7039096A FR 7039096 A FR7039096 A FR 7039096A FR 2066947 A1 FR2066947 A1 FR 2066947A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7039096A
Other versions
FR2066947B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2066947A1 publication Critical patent/FR2066947A1/fr
Application granted granted Critical
Publication of FR2066947B1 publication Critical patent/FR2066947B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/045—Electric field
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
FR7039096A 1969-11-03 1970-10-29 Expired FR2066947B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87329969A 1969-11-03 1969-11-03

Publications (2)

Publication Number Publication Date
FR2066947A1 true FR2066947A1 (fr) 1971-08-13
FR2066947B1 FR2066947B1 (fr) 1976-04-16

Family

ID=25361352

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7039096A Expired FR2066947B1 (fr) 1969-11-03 1970-10-29

Country Status (9)

Country Link
US (1) US3640811A (fr)
JP (1) JPS494583B1 (fr)
BE (1) BE758321A (fr)
CA (1) CA932627A (fr)
DE (1) DE2054069A1 (fr)
FR (1) FR2066947B1 (fr)
GB (1) GB1279229A (fr)
NL (1) NL7015995A (fr)
SE (1) SE358771B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290504A1 (fr) * 1974-11-05 1976-06-04 Eastman Kodak Co Procede pour deposer une couche de matiere dielectrique photosensible sur un support
FR2544746A1 (fr) * 1983-04-22 1984-10-26 White Eng Corp Procede de placage ionique pur utilisant des champs magnetiques
WO1988010321A1 (fr) * 1987-06-25 1988-12-29 University Of Houston-University Park Procede de deposition de pellicules en diamant

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947298A (en) * 1974-01-25 1976-03-30 Raytheon Company Method of forming junction regions utilizing R.F. sputtering
ATE2909T1 (de) * 1978-07-08 1983-04-15 Wolfgang Kieferle Verfahren zum auflagern einer metall- oder legierungsschicht auf ein elektrisch leitendes werkstueck und vorrichtung zur durchfuehrung desselben.
GB2159753B (en) * 1984-03-06 1988-09-07 Asm Fico Tooling Method and apparatus for cleaning lead pins before soldering operations
IT1185964B (it) * 1985-10-01 1987-11-18 Sgs Microelettronica Spa Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
GB2202236B (en) * 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride
KR910005401B1 (ko) * 1988-09-07 1991-07-29 경상현 비결정 실리콘을 이용한 자기정렬 트랜지스터 제조방법
EP1835524A1 (fr) * 2006-03-16 2007-09-19 Sulzer Metco AG Dispositif de fixation pour une source de pulvérisation cathodique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121852A (en) * 1960-04-18 1964-02-18 Gen Motors Corp Ohmic contacts on semiconductors
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3271286A (en) * 1964-02-25 1966-09-06 Bell Telephone Labor Inc Selective removal of material using cathodic sputtering
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
US3325393A (en) * 1964-05-28 1967-06-13 Gen Electric Electrical discharge cleaning and coating process
US3479269A (en) * 1967-01-04 1969-11-18 Bell Telephone Labor Inc Method for sputter etching using a high frequency negative pulse train
US3492215A (en) * 1967-02-27 1970-01-27 Bendix Corp Sputtering of material simultaneously evaporated onto the target

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"SOLID STATE TECHNOLOGY",VOLUME 11,NO.12,DECEMBRE 1968,"SPUTTER ETCHING OF MICROCIRCUITS AND COMPONENTS"R.HEIL,S.HURWIT,W.HUSS,PAGES 42-47 *
*REVUE AMERICAINE"ELECTRONICS", VOLUME 38,NO.1,11 JANVIER 1965,"ION PLATING",PAGES 35-36 *
*REVUE AMERICAINE"RCA REVIEW",VOLUME 29,NO.4,DECEMBRE 1968,"DC SPUTTERING WITH RF-INDUCAD SUBSTRATE BIAS",J.L.VOSSEN ET AL,PAGES 566-581) *
29,NO.4,DECEMBRE 1968,"DC SPUTTERING WITH RF-INDUCAD SUBSTRATE BIAS",J.L.VOSSEN ET AL,PAGES *
566-581) *
MICROCIRCUITS AND COMPONENTS"R.HEIL,S.HURWIT,W.HUSS,PAGES 42-47 *
REVUE AMERICAINE"ELECTRONICS", *
REVUE AMERICAINE"RCA REVIEW",VOLUME *
REVUE AMERICAINE"SOLID STATE TECHNOLOGY",VOLUME 11,NO.12,DECEMBRE 1968,"SPUTTER ETCHING OF *
VOLUME 38,NO.1,11 JANVIER 1965,"ION PLATING",PAGES 35-36 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290504A1 (fr) * 1974-11-05 1976-06-04 Eastman Kodak Co Procede pour deposer une couche de matiere dielectrique photosensible sur un support
FR2544746A1 (fr) * 1983-04-22 1984-10-26 White Eng Corp Procede de placage ionique pur utilisant des champs magnetiques
WO1988010321A1 (fr) * 1987-06-25 1988-12-29 University Of Houston-University Park Procede de deposition de pellicules en diamant

Also Published As

Publication number Publication date
BE758321A (fr) 1971-04-01
DE2054069A1 (de) 1971-05-19
GB1279229A (en) 1972-06-28
US3640811A (en) 1972-02-08
CA932627A (en) 1973-08-28
SE358771B (fr) 1973-08-06
NL7015995A (fr) 1971-05-05
JPS494583B1 (fr) 1974-02-01
FR2066947B1 (fr) 1976-04-16

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