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FI20116217L - A pair of n-type solar cells containing silicon - Google Patents

A pair of n-type solar cells containing silicon Download PDF

Info

Publication number
FI20116217L
FI20116217L FI20116217A FI20116217A FI20116217L FI 20116217 L FI20116217 L FI 20116217L FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 L FI20116217 L FI 20116217L
Authority
FI
Finland
Prior art keywords
pair
solar cells
containing silicon
cells containing
type solar
Prior art date
Application number
FI20116217A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20116217A7 (en
Inventor
Jarmo Skarp
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20116217A priority Critical patent/FI20116217A7/en
Priority to PCT/FI2012/051188 priority patent/WO2013079800A1/en
Publication of FI20116217L publication Critical patent/FI20116217L/en
Publication of FI20116217A7 publication Critical patent/FI20116217A7/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to an n-type silicon photovoltaic cell structure comprising a substrate (2) having a first surface (2a) and a second surface (2b) and comprising silicon, wherein the second surface (2b) is situated on the essentially opposite side of the first surface (2a) of the substrate (2), a first deposit of materials (3a) on the first surface (2a) of the substrate (2) and a second deposit (3b) of materials on the second surface (2b)of the substrate (2).
FI20116217A 2011-12-02 2011-12-02 An n-type silicon photovoltaic cell structure FI20116217A7 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20116217A FI20116217A7 (en) 2011-12-02 2011-12-02 An n-type silicon photovoltaic cell structure
PCT/FI2012/051188 WO2013079800A1 (en) 2011-12-02 2012-11-30 An n-type silicon photovoltaic cell structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20116217A FI20116217A7 (en) 2011-12-02 2011-12-02 An n-type silicon photovoltaic cell structure

Publications (2)

Publication Number Publication Date
FI20116217L true FI20116217L (en) 2013-06-03
FI20116217A7 FI20116217A7 (en) 2013-06-03

Family

ID=48534736

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20116217A FI20116217A7 (en) 2011-12-02 2011-12-02 An n-type silicon photovoltaic cell structure

Country Status (2)

Country Link
FI (1) FI20116217A7 (en)
WO (1) WO2013079800A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210010095A (en) * 2019-07-19 2021-01-27 엘지전자 주식회사 Solar cell and method for manufacturing the same
FI130280B (en) * 2021-03-19 2023-05-31 Beneq Oy Method and use in relation to film and film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070277875A1 (en) * 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
TWI320974B (en) * 2006-09-27 2010-02-21 Sino American Silicon Prod Inc Solar cell and method of fabircating the same
DE102007054384A1 (en) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Method for producing a solar cell with a surface-passivating dielectric double layer and corresponding solar cell
DE102008045522A1 (en) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hetero-solar cell and process for the preparation of hetero-solar cells
US20100210060A1 (en) * 2009-02-13 2010-08-19 Peter Borden Double anneal process for an improved rapid thermal oxide passivated solar cell
CN102460715B (en) * 2009-04-21 2015-07-22 泰特拉桑有限公司 High-efficiency solar cell structure and manufacturing method
CN102549766A (en) * 2009-04-24 2012-07-04 沃尔夫.厄埃亭 Method and apparatus for a non-resistive layer formed of electrically insulating material
DE102009025977A1 (en) * 2009-06-16 2010-12-23 Q-Cells Se Solar cell and manufacturing process of a solar cell
FR2953999B1 (en) * 2009-12-14 2012-01-20 Total Sa PHOTOVOLTAIC CELL HETEROJUNCTION WITH REAR CONTACT
DE102010017155B4 (en) * 2010-05-31 2012-01-26 Q-Cells Se solar cell
CN102064237A (en) * 2010-11-29 2011-05-18 奥特斯维能源（太仓）有限公司 Double-layer passivating method for crystalline silicon solar battery

Also Published As

Publication number Publication date
WO2013079800A1 (en) 2013-06-06
FI20116217A7 (en) 2013-06-03

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