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FI20001166L - Menetelmä ja laitteisto reaktantin syöttämiseksi kaasufaasissa reaktiokammioon - Google Patents

Menetelmä ja laitteisto reaktantin syöttämiseksi kaasufaasissa reaktiokammioon Download PDF

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Publication number
FI20001166L
FI20001166L FI20001166A FI20001166A FI20001166L FI 20001166 L FI20001166 L FI 20001166L FI 20001166 A FI20001166 A FI 20001166A FI 20001166 A FI20001166 A FI 20001166A FI 20001166 L FI20001166 L FI 20001166L
Authority
FI
Finland
Prior art keywords
reactant
feeding
reaction chamber
gas phase
chamber
Prior art date
Application number
FI20001166A
Other languages
English (en)
Swedish (sv)
Other versions
FI118805B (fi
Inventor
Janne Kesaelae
Original Assignee
Asm Microchemistry Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Microchemistry Oy filed Critical Asm Microchemistry Oy
Priority to FI20001166A priority Critical patent/FI118805B/fi
Priority to TW089111644A priority patent/TW524875B/zh
Priority to US09/854,706 priority patent/US6699524B2/en
Priority to JP2001145256A priority patent/JP5241982B2/ja
Publication of FI20001166L publication Critical patent/FI20001166L/fi
Priority to US10/695,269 priority patent/US20040086642A1/en
Application granted granted Critical
Publication of FI118805B publication Critical patent/FI118805B/fi

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
FI20001166A 2000-05-15 2000-05-15 Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon FI118805B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20001166A FI118805B (fi) 2000-05-15 2000-05-15 Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon
TW089111644A TW524875B (en) 2000-05-15 2000-06-14 Method and apparatus for feeding gas phase reactant into a reaction chamber
US09/854,706 US6699524B2 (en) 2000-05-15 2001-05-14 Method and apparatus for feeding gas phase reactant into a reaction chamber
JP2001145256A JP5241982B2 (ja) 2000-05-15 2001-05-15 気相反応物を反応室内へ供給するための方法および装置
US10/695,269 US20040086642A1 (en) 2000-05-15 2003-10-28 Method and apparatus for feeding gas phase reactant into a reaction chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20001166 2000-05-15
FI20001166A FI118805B (fi) 2000-05-15 2000-05-15 Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon

Publications (2)

Publication Number Publication Date
FI20001166L true FI20001166L (fi) 2001-11-16
FI118805B FI118805B (fi) 2008-03-31

Family

ID=8558400

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20001166A FI118805B (fi) 2000-05-15 2000-05-15 Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon

Country Status (4)

Country Link
US (2) US6699524B2 (fi)
JP (1) JP5241982B2 (fi)
FI (1) FI118805B (fi)
TW (1) TW524875B (fi)

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Also Published As

Publication number Publication date
TW524875B (en) 2003-03-21
JP5241982B2 (ja) 2013-07-17
US6699524B2 (en) 2004-03-02
FI118805B (fi) 2008-03-31
JP2001323374A (ja) 2001-11-22
US20010042523A1 (en) 2001-11-22
US20040086642A1 (en) 2004-05-06

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