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EP4342001A4 - Field-effect transistor with source-connected field plate - Google Patents

Field-effect transistor with source-connected field plate

Info

Publication number
EP4342001A4
EP4342001A4 EP22805561.2A EP22805561A EP4342001A4 EP 4342001 A4 EP4342001 A4 EP 4342001A4 EP 22805561 A EP22805561 A EP 22805561A EP 4342001 A4 EP4342001 A4 EP 4342001A4
Authority
EP
European Patent Office
Prior art keywords
field
source
effect transistor
field plate
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22805561.2A
Other languages
German (de)
French (fr)
Other versions
EP4342001A1 (en
Inventor
Kyle BOTHE
Jeremy Fisher
Matt King
Jia GUO
Qianli MU
Scott Sheppard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Wolfspeed Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/325,666 external-priority patent/US11749726B2/en
Application filed by Wolfspeed Inc filed Critical Wolfspeed Inc
Publication of EP4342001A1 publication Critical patent/EP4342001A1/en
Publication of EP4342001A4 publication Critical patent/EP4342001A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
EP22805561.2A 2021-05-20 2022-05-20 Field-effect transistor with source-connected field plate Pending EP4342001A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/325,666 US11749726B2 (en) 2020-10-27 2021-05-20 Field effect transistor with source-connected field plate
PCT/US2022/030233 WO2022246182A1 (en) 2021-05-20 2022-05-20 Field effect transistor with source-connected field plate

Publications (2)

Publication Number Publication Date
EP4342001A1 EP4342001A1 (en) 2024-03-27
EP4342001A4 true EP4342001A4 (en) 2025-04-23

Family

ID=84141875

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22805561.2A Pending EP4342001A4 (en) 2021-05-20 2022-05-20 Field-effect transistor with source-connected field plate

Country Status (4)

Country Link
EP (1) EP4342001A4 (en)
JP (1) JP2024519369A (en)
KR (1) KR102875641B1 (en)
WO (1) WO2022246182A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120341216A (en) * 2025-03-05 2025-07-18 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Anti-interference semiconductor structure and preparation method thereof, and electronic equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140361341A1 (en) * 2013-06-09 2014-12-11 Cree, Inc. CASCODE STRUCTURES FOR GaN HEMTs
US20160218189A1 (en) * 2015-01-28 2016-07-28 Kabushiki Kaisha Toshiba Semiconductor device
US20160260615A1 (en) * 2015-03-02 2016-09-08 Renesas Electronics Corporation Manufacturing method of semiconductor device and semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
JP2007150282A (en) * 2005-11-02 2007-06-14 Sharp Corp Field effect transistor
JP2011249728A (en) * 2010-05-31 2011-12-08 Toshiba Corp Semiconductor device and method for manufacturing the same
JP2013157407A (en) * 2012-01-27 2013-08-15 Fujitsu Semiconductor Ltd Compound semiconductor device and manufacturing method of the same
US9847411B2 (en) * 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US20190097001A1 (en) * 2017-09-25 2019-03-28 Raytheon Company Electrode structure for field effect transistor
US11715774B2 (en) * 2018-03-28 2023-08-01 Cornell University Vertical gallium oxide (GA2O3) power FETs
JP7143660B2 (en) * 2018-07-18 2022-09-29 サンケン電気株式会社 semiconductor equipment
CN110071173B (en) * 2019-04-30 2023-04-18 英诺赛科（珠海）科技有限公司 Semiconductor device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140361341A1 (en) * 2013-06-09 2014-12-11 Cree, Inc. CASCODE STRUCTURES FOR GaN HEMTs
US20160218189A1 (en) * 2015-01-28 2016-07-28 Kabushiki Kaisha Toshiba Semiconductor device
US20160260615A1 (en) * 2015-03-02 2016-09-08 Renesas Electronics Corporation Manufacturing method of semiconductor device and semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2022246182A1 *

Also Published As

Publication number Publication date
WO2022246182A1 (en) 2022-11-24
KR20240005063A (en) 2024-01-11
KR102875641B1 (en) 2025-10-23
JP2024519369A (en) 2024-05-10
EP4342001A1 (en) 2024-03-27

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