EP3929960A1 - Mems switch, method of manufacturing a mems switch and device - Google Patents

Abstract

MEMS switch (1) with a bending element (150) and a switching contact (120) arranged on the bending element and with a mating contact (250), the bending element (150) in a contact position in which the switching contact (120) on the mating contact (250) is in contact, the bending element (150) being biased into the contact position.

In the method for producing such a MEMS switch (1, 300), the bending element (150) is preloaded into the contact position.

Description

The invention relates to a MEMS switch and a method for producing a MEMS switch and a device.

It is known to use so-called MEMS switches in logic circuits, gates or I / O assemblies for PLC devices. Such MEMS switches (MEMS = "Microelectromechanical Systems") are micro- or nanometer-sized mechanical solid-state switching elements that can be switched by means of electrical voltage.

For the purposes mentioned above, in particular for the implementation of assemblies for PLC devices with integrated short-circuit testing, it would be advantageous to strive for a topological configuration of micromechanical switch components that is complementary to CMOS technology. However, switching elements can be used by means of CMOS technology, which switch through in the normal state and which interrupt a switching contact in the energized state. MEMS switches, on the other hand, have strengths in other areas of application.

Against this background, it is therefore the object of the invention to create an improved MEMS switch which, in particular, allows improved operation. In addition, it is an object of the invention to specify a method for producing such a MEMS switch. Another object of the invention is to create a device with a plurality of such MEMS switches.

This object of the invention is achieved with a MEMS switch with the features specified in claim 1 and with a method with the features specified in claim 9 and with a device with the features specified in claim 13 solved. Preferred further developments of the invention are given in the associated subclaims, the following description and the drawing.

The MEMS switch according to the invention has a switching contact and a bending element and a mating contact arranged opposite the bending element. In the case of the MEMS switch according to the invention, the bending element can assume a contact position in which the mating contact is in contact with the switching contact. In the MEMS switch according to the invention, the bending element is mechanically preloaded into the contact position.

By means of the MEMS switch according to the invention, as a result of the bias in the contact position, a circuit can be implemented in which the MEMS switch provides a switching contact in its permanent state in which it is not subjected to an electrical voltage. This means that the MEMS switch switches through when there is no electrical voltage applied and only interrupts the switching contact in the event of voltage application. Such a property of producing a switching contact in the normal state without the application of voltage has so far been a unique selling point of CMOS technology. According to the invention, this advantageous property is now also available for MEMS switches. In this way, there is no need to make a choice between switches implemented in CMOS technology, which have precisely such properties, and MEMS switches, which conventionally do not have these properties. The advantages known from CMOS technology and the advantages of MEMS technology can consequently be used at the same time by means of the MEMS switch according to the invention.

In contrast to this, conventional MEMS switches are implemented with a metallic and / or silicon-based bending element, in particular a bending beam, which is deflected, for example, by an electrical voltage and then brings the switching contact and the mating contact together and short-circuits. A current can then flow through this short circuit. In the case of the MEMS switch according to the invention, however, it is not necessary to apply an electrical voltage in order to bring about a flow of current. Rather, with the MEMS switch according to the invention, a current flow is possible in the normal state, that is to say in the steady state without applying an electrical voltage to the MEMS switch.

With conventional MEMS switches, the flexural element cannot be manufactured in a contact position, since current manufacturing technologies do not allow the flexural element to be manufactured in the deflected state and to ensure contact between the switching contact and the mating contact. In addition, it is currently not possible to manufacture non-deflected bending elements which have switching contacts which, at the end of the manufacture, rest reversibly separable on a mating contact.

On the one hand, in a final process step in the production of MEMS switches, wafers, which carry switching contacts and mating contacts, are joined together by means of high temperatures. If the switching contact and mating contact are already in contact, they would stick to one another or even alloy together in the last process step, so that the conventional MEMS switch would not be switchable at all. Switching contact and mating contact would then not be easily reversibly separable.

Other known manufacturing processes were also associated with the flexural element or the switching contact and mating contact adhering to one another, so that such alternative manufacturing processes are also ruled out.

In the MEMS switch according to the invention, the bending element is advantageously a bending beam. MEMS switches with bending elements in the form of bending bar points represent an established and proven type of MEMS switch, so that the MEMS switch according to the invention is compatible with known MEMS switches can be formed and - for example by means of the same wafers - can be produced jointly or as an alternative to these.

In the MEMS switch according to the invention, the bending element is formed with, in particular from, semiconductor material, in particular silicon, and / or with or from metal, and / or with or from dielectrics. By means of the aforementioned materials, the MEMS switch can be manufactured with materials which are known, tested and compatible with semiconductor electronics. The MEMS switch according to the invention can thus be operated jointly with conventional MEMS switches or can be operated with the same operating parameters as conventional MEMS switches.

In the MEMS switch according to the invention, the bending element can expediently be brought out of the contact position by applying voltage to the MEMS switch. Preferably, the switching contact and mating contact can be spaced apart from one another.

In this development of the invention, the MEMS switch according to the invention can advantageously be used in order to implement a MEMS relay without permanent application of an electrical voltage. In particular, logic circuits and / or micromechanical logic gates can be implemented by means of this development of the MEMS switch according to the invention. In this development, a MEMS switch according to the invention can preferably be used for measuring short circuits in a PLC assembly or for discharging a capacitive load after a supply voltage has been switched off

The MEMS switch suitably has a prestressing element which is designed and arranged to mechanically prestress the bending element. The prestressing element is advantageously arranged on the bending element. In this way, the mechanical pre-tensioning can be easily applied to the bending element by means of the pre-tensioning element.

In the MEMS switch according to the invention, the prestressing element is preferably formed with a layer resting against the bending element. The layer is preferably formed with a stringing material, that is to say a material that has tensile stress. In this way, a layer that is under tensile stress can mechanically pretension the bending element on which the layer is arranged and thus deflect it when there is otherwise no force acting on the bending element. Alternatively or additionally, the layer arranged on the bending element can have a compressive stress. In this way, too, the layer under compressive stress can preload the bending element and deflect it when there is otherwise no force acting on the bending element.

In the MEMS switch according to the invention, the prestressing element is preferably formed with a material which has a coefficient of thermal expansion which differs from that of the material of the bending element by more than 20-10 ^-6 / K. A coefficient of thermal expansion in the context of the present invention is suitable to be understood as a coefficient of linear expansion. In this way, the pretensioning element, in particular a layer, can be arranged on the bending element in the heated state, so that when the bending element and the pretensioning element cool down, the different thermal expansion coefficients of the layer and the bending element result in different shrinkage of the material of the pretensioning element and bending element. If the prestressing element, in particular the layer, and the bending element are arranged next to one another, then a tensile or compressive stress of the prestressing element that exists as a result of the different shrinkage can bring about a mechanical prestressing of the bending element.

In the MEMS switch, the biasing element is preferably made with a silicon nitride and / or with a silicon oxynitride and / or a silicon oxide, preferably silicon dioxide, and / or metal, in particular gold, and / or with a piezoelectric Material and / or a polymer and / or a, in particular partial, doping and / or an electrical insulator, in particular aluminum oxide and / or gallium oxide.

Silicon oxynitride and / or silicon oxide and / or silicon dioxide and / or gold advantageously form a stringent material if this is arranged on the bending element at an elevated temperature. When cooling, the aforementioned materials develop tensile stresses or compressive stresses, which pretension the bending element.

Alternatively or additionally, the bending element can be prestressed by means of piezoelectric material. For this purpose, the piezoelectric material is expediently arranged in particular in layers on the bending element. The piezoelectric material particularly preferably forms a piezoelectric layer sequence as is known from piezo stacks.

In the method according to the invention for producing a MEMS switch according to one of the preceding claims, the bending element is mechanically preloaded into the contact position.

In the method according to the invention, the bending element is preferably initially held in its position by means of a fixation during production, then the bending element is mechanically pretensioned and the fixation is subsequently canceled. In this way, the bending element can be pretensioned particularly easily. In particular, a fixation can be realized in such a way that the bending element is manufactured subtractively and, before the bending element is manufactured subtractively, that is to say released, is pretensioned. Then the bending element is held in position, ie fixed, until its production is complete, as a result of its connection to parts from which it has yet to be separated.

In the method according to the invention, the bending element, in particular with a silicon-on-insulator substrate, is preferably manufactured subtractively.

In this way, the bending element can be fixed during its manufacture in such a way that the bending element is pretensioned before it is released, i.e. before the subtractive production of the bending element is completed from a volume material, i.e. a material from which the bending element is subtractively produced. In this way, the bending element is fixed until it is finally released so that it can be easily pretensioned and processed.

The silicon-on-insulator substrate also advantageously has a layer of an insulator. This insulator, preferably silicon dioxide, can now advantageously serve as a prestressing element on the bending element, which prestresses it. In this development of the method according to the invention, an additional provision of a prestressing element is advantageously not necessary in order to prestress the bending element. Rather, the bending element can be manufactured by means of a silicon layer of the silicon-on-insulator substrate, while the prestressing element is manufactured by means of an insulator of the silicon-on-insulator substrate.

In the subtractive production of the bending element, the insulator is particularly preferably left on the bending element, so that the prestressing element does not have to be arranged specifically on the bending element. Due to the manufacturing process, the insulator of the silicon-on-insulator substrate is regularly under compressive stress, so that the insulator can serve as a prestressing element. If the bending element is not separated from the insulator during its subtractive production from the silicon-on-insulator substrate, then the insulator can preload the bending element. If the subtractive production of the bending element is completed, the bending element is released and the bending element can move due to the prestress due to the insulator deflect. Furthermore, it is conceivable to apply an alternative material, which is under tension and consequently causes a deflection of the beam after the release of the bending element, as a replacement or supplement to the silicon-on-insulator isolator before the bar is exposed on the rear side.

In the method according to the invention, the bending element is preferably prestressed before it is manufactured subtractively. In this way, the bending element is fixed before it is released, i.e. before the subtractive manufacturing of the bending element is completed.

In the method according to the invention, a prestressing element is expediently arranged as a layer on the bending element. In this way, the prestress of a layer arranged on the bending element as a prestressing element can easily deflect the bending element as described above.

In the method according to the invention, the prestressing element is suitably arranged on the bending element or the material of the bending element at a temperature which exceeds the operating temperature of the MEMS switch and / or the temperature of at least 293 Kelvin by at least 40 Kelvin, preferably at least 60 Kelvin and in particular at least 80 Kelvin, exceeds. In this way, the pretensioning element, in particular a layer, can be arranged on the bending element in the heated state, so that when the bending element and the pretensioning element cool, different shrinkages of the material of the pretensioning element and bending element occur due to a preferably different coefficient of thermal expansion. If the prestressing element, in particular the layer, and the bending element are arranged next to one another, then a tensile or compressive stress of the prestressing element that exists as a result of the different shrinkage can easily bring about a prestressing of the bending element.

The device according to the invention is preferably a logic circuit and / or a micromechanical logic gate and / or an analog circuit or has a logic circuit and / or a micromechanical logic gate and / or an analog circuit. The device according to the invention has such a MEMS switch as described above and / or produced by a method as described above.

The invention is explained in more detail below with the aid of an exemplary embodiment shown in the drawing.

Fig. 1

eine Ausbildung eines Vorspannelements an einem Halbleitermaterial zur Fertigung eines erfindungsgemäßen MEMS-Schalters schematisch im Längsschnitt,

Fig. 2 bis 4

eine konventionelle Herstellung eines konventionellen MEMS-Schalters in aufeinanderfolgenden Prozessstadien schematisch im Längsschnitt,

Fig. 5 bis 7

ein erstes Ausführungsbeispiel einer erfindungsgemäßen Herstellung eines erfindungsgemäßen MEMS-Schalters mit einem Vorspannelement gem. Fig. 1 in aufeinanderfolgenden Prozessstadien schematisch in Längsschnitt sowie

Fig. 8 bis 10

ein weiteres Ausführungsbeispiel einer erfindungsgemäßen Herstellung eines erfindungsgemäßen MEMS-Schalters mit einem Vorspannelement gem. Fig. 1 in aufeinanderfolgenden Prozessstadien schematisch in Längsschnitt.

Show it:

Fig. 1

a design of a biasing element on a semiconductor material for the production of a MEMS switch according to the invention, schematically in longitudinal section,

Figs. 2 to 4

a conventional production of a conventional MEMS switch in successive process stages, schematically in longitudinal section,

Figures 5 to 7

a first embodiment of an inventive production of a MEMS switch according to the invention with a biasing element according to FIG. Fig. 1 in successive process stages schematically in longitudinal section as well

Figures 8 to 10

a further embodiment of an inventive production of a MEMS switch according to the invention with a biasing element according to FIG. Fig. 1 in successive process stages schematically in longitudinal section.

The production according to the invention of the MEMS switch 1 according to the invention is based on the production of a conventional one MEMS switch as in DE102017215236A1 disclosed. The MEMS switch according to the invention is manufactured as in the aforementioned publication, unless otherwise described here.

The MEMS switch 1 according to the invention comprises a bending element in the form of a bending beam which is formed with a semiconductor material, silicon in the illustrated case. The mode of operation of a biasing of a semiconductor material is first of all illustrated in FIG Fig. 1 The arrangement 2 illustrated here explains: The arrangement 2 comprises a semiconductor layer 3 formed with silicon, on which a biasing element in the form of a layer 4 is arranged. The layer 4 is applied over the entire surface of the semiconductor layer 3.

The layer 4 has a high internal tensile stress, which prestresses the semiconductor layer 3. The tensile stress of the layer 4 is realized by means of thermal expansion during the application or internal stresses of the layer 4 resulting from the process: The layer 4 is formed with gold, which is at least 40 degrees, in further embodiments at least 100 degrees, above the operating temperature of the MEMS -Switch is applied to the semiconductor layer 3. As a result of the cooling of the layer 4, this layer 3 contracts in directions parallel to the interface between layer 4 and semiconductor layer 3.

As a result of the contraction, the layer 4 formed with gold exerts a prestress on the semiconductor layer 3 formed with silicon, which bends as a result of the contraction and bends around the layer 4 formed with it.

Instead of a layer 4 formed with gold, a layer formed with another material, for example with silicon oxynitride or with metal, can also serve as a pretensioning element.

In further exemplary embodiments, instead of a material with tensile stress, a material under compressive stress, for example silicon dioxide, can be provided on a side of the semiconductor layer 3 which is remote from the view.

As in the Figures 2 to 4 is shown for making MEMS switches like them from DE102017215236A1 An SOI substrate 10 ( “silicon-on-insulator” substrate) is known, which has a silicon-insulator-silicon layer sequence 20 which is arranged on an insulation layer 30 formed with glass. The insulation layer 30 and a layer-like insulator 40 of the silicon-insulator-silicon layer sequence 20 of the SOI substrate 10 are each formed from glass, ie silicon dioxide. The SOI substrate 10 thus has a layer sequence which comprises a homogeneous glass layer 30 (in Fig. 2 shown at the bottom), based on it a 300 micrometer thick homogeneous silicon layer 70, then the one micrometer thick insulator 40 formed as a glass layer and finally a 10 micrometer thick outer silicon layer 80.

In order to manufacture the bending beams of the MEMS switches, a metallization 110 is first applied to the SOI substrate 10 and is introduced into a trough-shaped recess in the silicon layer 80. The trough-shaped depression forms a shallow trench extending perpendicular to the plane of the drawing. The metallization 110 ends with the silicon layer 80. The metallization 110 is embodied as a 300 nanometer thick gold layer. The metallization 110 differs in the geometric details from the metallization 110 in FIG Figs. 2 to 4 MEMS switch shown from that of the publication DE 102017215236 A1 , in which, instead of a metallization 110 located in a trough-shaped trench, a metallization is located in two mutually parallel strips and on an intermediate area. Otherwise corresponds to that in block letters DE 102017215236 A1 MEMS switch shown here corresponds to the MEMS switch shown here.

In addition, a region of the silicon layer 80 that is remote from the metallization 110 is also provided on its upwardly facing surface by means of a glass layer 90 and metallized by means of a 300 nanometer thick gold layer 120. The gold layer 120 is applied, as is known per se, by means of lithography and a subsequent etching step. In the case of the MEMS switch, the two gold layers 110, 120 will form a connection (gold layer 110) and a free end (gold layer 120) of the bending beam.

In addition, the SIO substrate 10 lies as in FIG Fig. 2 For this purpose, gaps 130, 140 extending perpendicular to the direction of the drawing are introduced into the outer silicon layer 80 adjacent to the gold layers 110, 120 on their side remote from the respective other gold layer 110, 120 and adjoining the insulator 40 in the thickness direction d protrude into the SIO substrate 10. The gaps run to the trough-shaped depression and the metallization 110 lying therein parallel and perpendicular to the plane of the drawing.

For this purpose, the outer silicon layer 80 has been removed beforehand by means of the DRIE process (DRIE = “ deep reacive ion etching” ) to form the gaps 130, 140.

As in Fig. 3 shown the isolation layer 30 and the silicon layer 70 and the insulator 40 removed by means of lithography and successive execution of the RIE method, the DRIE method and the RIE method in that area of the SIO substrate 10 which is at the gap on the gold layer 120 140 as well as to the gold layer 120 and the area of the outer silicon layer 80 lying between the gold layer 110 and the gold layer 120.

Consequently, by means of the outer silicon layer 80 carrying the gold layers 110 and 120, the bending beam 150 is formed, the free end of which is formed with the gold layer 120 and which is connected to the SIO substrate by means of the insulator 40 near the gold layer 110. This last step of forming the bending beam 150 is also referred to below as "releasing" the bending beam.

As a result of the gap 130, the bending beam is mechanically decoupled from the remaining regions of the outer silicon layer 80.

As in FIG Fig. 4 shown in a subsequent production step further parts of the MEMS switch can be connected.

In the case of the bending beam 150, the gold layer 120 forms a first contact of the bending beam 150 of the MEMS switch. The mating contact corresponding to the first contact of the bending beam 150 is formed according to the invention with a glass wafer 200:
For this purpose, a 700 micrometer thick glass wafer 200 is used, in which two trough-shaped trenches 210, 220 are introduced, which run parallel to one another and perpendicular to the plane of the drawing. The trench 220 is several times as wide as the trench 210. The area of the glass wafer 200 located between the two trenches 210, 220 is provided with a metallization 255. In addition, an edge region of a bottom of the wider trench 220, which is further away from the narrower trench 210, is also provided with a metallization 250, which forms a mating contact for the contact of the bending beam 150. At a distance from the metallization 250, the area of the bottom of the wider trench 220 closer to the narrower trench 210 is provided with a gate metallization 260 which, after completion of the MEMS switch, is used to deflect the bending beam 150 by means of supplying control signals.

The MEMS switch 1 according to the invention is now basically produced using the same manufacturing method as the conventional one MEMS switch manufactured. However, there are a few differences in manufacturing, as explained below:
Before the bending beam 150 is exposed as described above, the bending beam is as in FIG Fig. 5 shown provided with the layer 4 as a prestressing element. As in Fig. 1 shown consists of the layer 4 of gold. This layer 4 is as in Fig. 1 explained in the heated state, in the illustrated embodiment, heated by 40 degrees compared to the operating temperature of the MEMS switch 1, applied to the silicon layer 80 of the bending beam 150. The layer 4 has a thickness in the thickness direction d of 1.5 micrometers. In further exemplary embodiments not specifically shown, the layer can also have a different thickness, for example of one micrometer or of 2 micrometers. In further exemplary embodiments, the layer 4 can also be formed with silicon nitride and / or silicon oxynitride or other materials. In the case of silicon nitride, the layer 4 is provided with a bias voltage as a result of the deposition.

The layer 4 cools down after being applied to the silicon layer 80 of the bending beam 150. Since in the in Fig. 5 If the bending beam 150 shown here is not yet released, the layer 4 cannot yet deflect the bending beam.

Subsequently, before the bending beam 150 is exposed, the glass wafer 200 is connected to the metallization 250 forming the mating contact. In this way, the contact formed with the gold layer 120 can come to rest with the mating contact formed with the metallization 250 after the flexural beam 150 has been exposed.

After the connection of the glass wafer 200, the bending beam is now as shown on the basis of Fig. 3 shown isolated. For this purpose, as described above, the insulation layer 30 and the silicon layer 70 and the insulator 40 are made by means of lithography and successive execution of the RIE method, the DRIE method and of the RIE process in that area of the SIO substrate 10 which is adjacent to the gap 140 located on the gold layer 120 as well as to the gold layer 120 and the area of the outer silicon layer 80 located between the gold layer 110 and the gold layer 120.

After the bending beam 150 has been exposed, the bending beam 150 as a result of the layer 4 is shown in accordance with FIG. Fig. 7 bent upwards so that the contact 120 comes to rest with the mating contact formed with de r metallization 250. Without the layer 4, the bending beam 150 would be the same as in the conventional MEMS switch Figures 2 to 4 remain in a preload-free rest position, ie in an alignment of the bending beam 150 with its longitudinal center axis in the horizontal direction.

In another in the Figures 8 to 10 In the illustrated embodiment of the MEMS switch 300 according to the invention, no additional layer 4 is applied to the top of the bending beam 150. Instead, the insulator 40, which is already arranged on the silicon layer 80 of the bending beam 150 as a result of the manufacturing process, is used: unlike in FIG Figures 5 to 7 For this purpose, the layer-like insulator 40 of the silicon-insulator-silicon layer sequence 20 of the SOI substrate 10 is not removed when the bending beam 150 is exposed. Instead, the isolator 40 remains as in FIG Fig. 10 shown when the bending beam 150 is exposed.

During the manufacture of the SOI substrate 10, the glass of the insulator 40 is placed between the silicon layers 70, 80 with a high compressive stress, so that the insulator 40 forms a prestressing element with a significant compressive stress when it is used to manufacture a MEMS switch 1, as described above . After the bending beam 150 with the insulator 40 has been exposed, the insulator 40 exerts a prestress on the bending beam 150, by means of which the gold layer 120 of the bending beam with the metallization 250 of the glass wafer 200 comes to rest.

In a further exemplary embodiment, the bending beam 150 of the MEMS switches 1, 300 according to the invention is different from FIG Figures 2 to 10 shown - electrically conductive. For this purpose, the bending beam 150 is not only provided with a metallization 120 at the free end of the bending beam 150, but rather the bending beam 150 is along its entire longitudinal extent (ie along its entire extent in the direction of the two-dimensional extent of the layers of the silicon-insulator-silicon layer sequence 20 , that is, metallized perpendicular to the thickness direction d).

A device according to the invention in the form of a logic circuit which has micromechanical logic gates which are constructed with MEMS switches (1, 300) according to the invention produced according to the invention, as described above, is not explicitly shown in the drawing.

Claims (14)

1. MEMS switch (1) with a bending element (150) and a switching contact (120) arranged on the bending element, the bending element (150) in a contact position in which the switching contact (120) is in contact with the mating contact (250) is, wherein the bending element (150) is biased into the contact position. 2. MEMS switch according to the preceding claim, wherein the bending element (150) is a bending beam. 3. MEMS switch according to one of the preceding claims, in which the bending element (150) is formed with, in particular from, semiconductor material, in particular silicon, and / or metal and / or one or more dielectrics. 4. MEMS switch according to one of the preceding claims, in which the bending element (150) can be brought out of the contact position by applying voltage to the MEMS switch (1, 300) and in particular the switching contact (120) and mating contact (150) can be spaced from one another. 5. MEMS switch according to one of the preceding claims, which has a biasing element (4) which is designed and arranged to bias the bending element (150). 6. MEMS switch according to one of the preceding claims, in which the prestressing element (4) is formed with a layer resting against the bending element (150). 7. MEMS switch according to one of the preceding claims, in which the prestressing element (4) is formed with a material which has a coefficient of thermal expansion which differs from that of the material of the bending element (150) by more than 20 · 10 ^-6 / K differs. 8. MEMS switch according to one of the preceding claims, in which the biasing element (4) with a silicon nitride and / or a silicon oxynitride and / or silicon oxide and / or piezoelectric material and / or a polymer and / or a, in particular partial, Doping and / or one or more electrical insulators, in particular aluminum oxide and / or gallium oxide, is formed. 9. A method for producing a MEMS switch according to one of the preceding claims, in which the bending element (150) is biased into the contact position. 10. The method according to any one of the preceding claims, in which the bending element (150), in particular with a silicon-on-insulator substrate (10), is manufactured subtractively. 10. The method according to any one of the preceding claims, in which the bending element (150) is provided with the prestressing element (4) before it is manufactured subtractively. 11. The method according to any one of the preceding claims, wherein the prestressing element (4) is arranged as a layer on the bending element (150). 12. The method according to any one of the preceding claims, wherein the biasing element (4) is arranged on the bending element (150) or the material of the bending element (150) at a temperature which is the operating temperature of the MEMS switch (1) and / or the Temperature of at least 293 Kelvin by at least 40 Kelvin, preferably at least 60 Kelvin and in particular at least 80 Kelvin, exceeds. 13. Device, preferably a logic circuit and / or a micromechanical logic gate and / or analog circuit or comprising a logic circuit and / or a micromechanical logic gate and / or analog circuit, with a MEMS switch (1, 300) according to one of the preceding Claims and / or produced according to a method of the preceding claims.

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