EP3707814A1 - Power converter with a very high switching frequency - Google Patents
Power converter with a very high switching frequencyInfo
- Publication number
- EP3707814A1 EP3707814A1 EP18796422.6A EP18796422A EP3707814A1 EP 3707814 A1 EP3707814 A1 EP 3707814A1 EP 18796422 A EP18796422 A EP 18796422A EP 3707814 A1 EP3707814 A1 EP 3707814A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- capacitor
- voltage
- power switch
- converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5383—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a self-oscillating arrangement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/1557—Single ended primary inductor converters [SEPIC]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/338—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/4815—Resonant converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the invention relates to a very high frequency switching power converter, as well as to a very high frequency switching power conversion method.
- the invention finds its application in particular in the conversion of a DC voltage to an AC or DC voltage, in HF and VHF radio frequency ranges (from 3 to 300 MHz, and in particular the free band at 27 MHz). Switching the converter in the radio frequency ranges makes it possible to reduce the size of the reactive components (inductors, capacitors) of the power conversion circuits, and thus reduce the overall volume of the power conversion chain, which may be advantageous. for applications where compactness and mass are important constraints.
- the switching is performed with a power switch, in particular with a field effect transistor.
- the transistor switches from the on state to the off state or vice versa, thanks to a control circuit called gate driver circuit (or "driver driver” in the English terminology).
- gate driver circuit or "driver driver” in the English terminology.
- one or more resistors can be added to the gate of the transistor in order to control the voltage or current variations on the transistor at the start of the converter (so-called non-resonant structure).
- non-resonant structure At each switching command transmitted by the gate driver to the transistor, there is a power dissipation in the one or more resistors added to the gate of the transistor.
- a gate driver having a so-called resonant structure can be employed, from passive energy storage components (capacitors and inductors), instead of using a non-resonant structure.
- the resonant structure in contrast to the non-resonant structure, makes it possible to store energy during a switching phase of the transistor, and to restore it during the next phase instead of dissipating it in the parasitic elements of the transistor. .
- a resonant network composed of an inductor and a capacitor, is placed between the drain of the transistor and the load resistor.
- the values of the components of the resonant network and of the output capacitance (also called shunt capacitance) of the transistor are selected such that the voltage V D s across the transistor is zero at each switching of the transistor, the on-state in the off state and vice versa.
- the losses in a transistor being due to the product of the voltage at its terminals by the current passing through it, a zero voltage at each switching makes it possible to minimize the losses.
- WO 2014067915 discloses a gate drive circuit for a class E converter.
- the gate drive circuit uses the drain-source voltage Vds to drive the gate of the transistor and thereby generate a switching signal, and without using auxiliary voltage source.
- the gate driver circuit is said to be "self-oscillating".
- one of the disadvantages of class E lies in the presence of a choke coil, connected to the voltage source to be converted, whose role is notably to have a current that is as constant as possible in steady state, and to transform thus the source of voltage in current source.
- the choke coil must have a value high, which prevents its integration on a printed circuit board.
- the choke coil must then be arranged separately from the converter, which adds mass, and can be unacceptable for certain applications where the mass is a critical parameter.
- a second drawback related to the class E lies in the very large voltage stress on the transistor.
- the drain-source voltage (Vds) is in fact approximately equal to four times the input voltage, which implies using a transistor with a relatively high RDSON resistance, affecting the transistor efficiency.
- a class ⁇ 2 converter illustrated in FIG. 1, comprises an input inductor L1, connected to the voltage source V
- the gate of the transistor is controlled by the gate drive circuit 12.
- the L2-C1 filter is added in parallel with the transistor in order to short-circuit the second harmonic of the drain-source voltage of the transistor and thus reduce the voltage stress. on the transistor.
- FIG. 2 illustrates the waveform of the drain-source voltage Vds in a class ⁇ 2 converter at a switching frequency of 30 MHz.
- the input voltage is equal to 20 V
- the drain-source voltage is equal to about twice the input voltage, which limits the voltage stress on the transistor.
- the lower voltage stress makes it possible to consider the parasitic capacitance as being more stable in value, which facilitates its modeling.
- the gate driver described previously in WO 201 406791 5, is well suited to a class E converter. However, this gate driver is not suitable for waveforms of class ⁇ 2 converters. .
- a gate driver for class ⁇ 2 converter is described in WO 2007/082090.
- the circuit disclosed in this document makes it possible to generate a switching signal (sinusoidal or square) for the transistor transistor gate of the class ⁇ 2. It uses for this an additional transistor, in addition to the transistor of the converter, which introduces parasitic elements into the circuit, potentially making the switching frequency of the transistor unstable.
- the disclosed circuit further includes an external voltage source, in addition to the DC voltage source to be converted, which increases the overall weight of the converter.
- An object of the invention is therefore to obtain a self-oscillating gate drive circuit, namely not involving an additional voltage source or additional transistor, for a DC voltage converter class ⁇ 2.
- An object of the invention making it possible to achieve this goal, partially or totally, is a resonant power converter of a continuous input voltage in AC or DC output voltage, comprising a power switch provided with a control, a first electrode and a second electrode connected to the ground of the converter, and a first inductor connected to an input port for a DC voltage to be converted, the first electrode being connected to the input port through the first inductor, the converter further comprising a first connected resonant network between the first electrode of the power switch and the ground, the first resonant network being configured to extract the fundamental component of a voltage between the first electrode and the second electrode of the power switch and to phase out a phase shift angle such that said fundamental component and the voltage between the first electrode and the second electrode are in phase opposition and thus generate a sinusoidal control signal, the converter further comprising a capacitive divider bridge connected between the first resonant network and the power switch control electrode to limit the amp study of the sinusoidal control signal for the control electrode of the power switch.
- the first resonant network comprises an oscillating network configured to generate and maintain, with the power switch, oscillations at a desired switching frequency, as well as a filtering module for the DC component of said oscillations, connected between the network oscillating and the divider bridge.
- the phase shift angle is substantially equal to 180 °.
- the converter comprises a first series resonant circuit, connected between the first electrode and the ground, and configured to resonate at a frequency equal to twice the switching frequency.
- the first series resonant circuit comprises a first capacitor and a second inductor.
- the drain is connected to an output port of the converted voltage via a second series resonant circuit.
- the second series resonant circuit comprises a third inductance connected in series with a third capacitor.
- the oscillating network comprises a second capacitor in parallel with an assembly composed of a fourth inductance connected in series with a fifth capacitor and with a sixth capacitor, forming a Clapp oscillator with the transistor, the filtering module being connected to the network. oscillating across the sixth capacitor.
- the oscillating network comprises a second capacitor in parallel with an assembly composed of a fourth inductance connected in series with a sixth capacitor, forming a Colpitts oscillator with the transistor, the filtering module being connected to the oscillating network at the terminals of the sixth capacitor.
- the filter module forms a low-pass LC filter, composed of a fifth inductor connected to the sixth capacitor and the divider bridge, and a seventh capacitor connected to the divider bridge and ground.
- the capacitive divider bridge comprises an eighth capacitor, connected to the first resonant network and the control electrode of the power switch, and a fourth capacitor, connected between the control electrode of the power switch and the mass.
- the switching frequency is set between 3 MHz and 300 MHz.
- Another object of the invention is a method of converting power from a DC input voltage into AC or DC output voltage in a resonant power converter comprising a power switch provided with a control electrode, a first electrode and a second electrode connected to the ground of the converter, and a first inductance connected to an input port for a DC voltage to be converted, the first electrode being connected to the input port via the first inductance, the method comprising the following steps:
- phase-shifting of the fundamental component of a phase shift angle such that said fundamental component and the voltage between the first electrode and the second electrode are in phase opposition, said phase-shifted fundamental component forming a sinusoidal control signal
- the method further comprises an initial step of generating and maintaining oscillations at a switching frequency of the power switch. power switch.
- the method further comprises a step of filtering the DC component of said oscillations between the phase shift step of the fundamental component and the step of reducing the amplitude of the signal.
- FIG. 2 represents a waveform of the drain-source voltage V D s of a class ⁇ 2 converter.
- FIG. 3 represents an electrical circuit of a class ⁇ 2 converter equipped with a gate driver circuit according to a first embodiment of the invention, operating with a Clapp oscillator.
- FIG. 4 represents an electrical circuit of a class ⁇ 2 converter equipped with a gate driver according to a second embodiment of the invention, operating with a Colpitts oscillator.
- FIG. 5 schematically represents the various steps of a method according to the invention.
- FIG. 3 represents an electrical circuit of a class ⁇ 2 converter equipped with a gate driver circuit according to a first embodiment of the invention. Vin continuous voltage is applied to the input of converter, between the input port of the voltage to be converted 9 and GND ground.
- a first inductor L1 is connected between the input port 9 is a node 1 1 which is connected to the drain of the transistor 2 to be switched at a switching frequency f 0 .
- a second inductor L2 and a first capacitor C1 form a first series resonant circuit 3, connected between node 1 1 and ground GND, and configured to resonate at a frequency equal to twice the switching frequency f 0 of the transistor, which corresponds substantially to the second harmonic of the switching frequency f 0 , in order to reduce the voltage stress on the transistor.
- a second series 4 resonant circuit comprising a third inductor L3 connected in series with a third capacitor C3, is connected between the node 1 1 and the output port 10 of the converted voltage.
- the converted voltage is shown diagrammatically in FIG. 3 by a load resistor R1.
- the second capacitor C2 represents the output capacitance of the transistor Cp, represented in FIG. 1, as well as an optional additional capacitor Copt, not shown.
- the second capacitor C2, the fifth capacitor C5, the fourth inductor L4 and the sixth capacitor C6 form an oscillating network 6.
- the oscillating network 6 thus advantageously uses certain parasitic components of the transistor, in particular its output capacitance Cp.
- the assembly composed of the oscillating network 6 and the transistor 2 forms a Clapp oscillator whose role is to create oscillations from the continuous input voltage Vin.
- the oscillations are maintained in the gate driver circuit at a given frequency f 0 .
- the Clapp oscillator has the advantage of being particularly stable in frequency, especially in the radio frequency range.
- the second capacitor C2 is represented between the first series 3 resonant circuit and the branch of the oscillating network 6 composed of the fifth capacitor C5, fourth inductor L4 and sixth capacitor C6.
- the second capacitor C2 could also be shown "right" of the transistor, to better illustrate that it partially represents the output capacitance of the transistor Cp.
- a low-pass LC type filtering module 8 composed of a fifth inductor L5 and a seventh capacitor C7, takes the voltage at the terminals of the sixth capacitor C6 as input; the output signal of the filter module 8 is recovered at the terminals of the seventh capacitor C7.
- the role of this filtering module 8 is to extract the fundamental component of the drain-source voltage signal Vds received by the Clapp oscillator, whose waveform is illustrated in FIG. 2, to remove all the harmonics therefrom. .
- the values of the reactive elements (capacitors and inductances) of the filtering module 8 and of the oscillating network 6 are determined so that the fundamental component of the drain-source voltage signal Vds at the output of the filtering module 8 , and the drain-source voltage Vds, are in phase opposition, preferably out of phase by a value substantially equal to 180 °.
- a capacitive divider bridge 7, composed of a fourth capacitor C4 and an eighth capacitor C8, makes it possible both to suppress the DC component of the voltage at the terminals of the seventh capacitor C7, and to reduce the amplitude of the signal coming from the gate attack circuit.
- the value of the fourth capacitor C4 is determined according to the DC component to be suppressed.
- the value of the eighth capacitor C8 is determined according to the amplitude reduction to be applied. There is thus a sinusoidal control signal at the output of the capacitive divider bridge 7.
- the sinusoidal control signal represents the output signal of the gate drive circuit.
- the phase shift of 180 ° and the suppression of the DC component result in a sinusoidal control signal that is lower than the threshold voltage (Vgsth) of the transistor.
- the transistor is therefore in the off state, and therefore no current flows through it.
- the sinusoidal control signal is greater than the threshold voltage (Vgsth) of the transistor, and the transistor turns on. , with a non-zero current passing through it.
- the operation of the soft switching converter (ZVS) is therefore well respected, limiting switching losses, without the need to use an additional voltage source or other active components.
- the gate driver circuit is then said to be self-oscillating.
- the embodiment illustrated in FIG. 4 differs from the embodiment illustrated in FIG. 3 by the oscillating network.
- the transistor 2 and the oscillating network 6 ' form a Colpitts oscillator.
- the Colpitts oscillator comprises one less capacitor with respect to the Clapp oscillator. Having one less capacitor advantageously makes it possible to reduce the dissipations due to parasitic elements of the capacitor, and thus to increase the efficiency of the converter. with a lower mass.
- the digital values of the fourth inductance L4 ', the sixth capacitor C6', the fifth inductance L5 'and the seventh capacitor C7' may differ from the numerical values of the corresponding components of the Clapp oscillator, to take account of the absence of the fifth capacitor C5.
- FIG. 5 diagrammatically illustrates the different steps of the power conversion method according to the invention.
- the oscillating network (6, 6 ') and the transistor 2 generate and maintain, in the presence of a direct voltage Vin, oscillations at a switching frequency f 0 of the transistor 2.
- the first resonant network 5 extracts the fundamental component of the drain-source voltage V D s of transistor 2.
- the fundamental component of the drain-source voltage V D s of the transistor is phase shifted by an angle of phase shift such that said fundamental component and the drain-source voltage V D s are in opposition phase.
- step 103 the DC component of the phase-shifted fundamental component is filtered by the capacitive divider bridge 7, in order to obtain a sinusoidal control signal for the gate of the transistor 2.
- the amplitude of this signal can be limited to the stage 104, compared to the level required by the gate of transistor 2.
- the value of 5 nH can be assigned to the first inductance, the second inductance the value of 3.3 nH, the first capacitor the value of 188 pF, the third inductor the value 340 nH, and the third capacitor the value 15 pF.
- the sizing of the Clapp oscillator consists in determining the values of the second capacitor C2, the fifth capacitor C5, the fourth inductance L4 and the sixth capacitor C6.
- a value of the fourth inductance L4 is set which is much greater than that of the first inductor L1 but smaller than that of the third inductor L3.
- L4 100 nH.
- the value of the second capacitor C2 may be given by the output capacitance of the transistor 2, substantially equal to 200 pF.
- the value of the sixth capacitor C6 is calculated by the formula of the oscillation frequency of the Clapp oscillator: Knowing the value of C2, C5, L4 and the oscillation frequency that we want to set at 100 MHz, we find a possible value of the sixth capacitor C6. This value can be modified according to the sizing of the components of the filtering module 8.
- the sizing of the filter module 8, of the LC low-pass filter type, whose function is to extract the fundamental component of the drain-source voltage signal received by the Clapp oscillator and to phase shift it by 180 °, is to determine the value of the fifth inductor L5, and the equivalent capacitance of cfu filter be of the filtering module 8, which takes account of the fourth capacitor C4, capacitor C7 of the seventh and the eighth capacitor C8.
- a first condition to impose on the filtering module 8 is that the resonant frequency of the filter module, as determined by the fifth inductor L5 and the equivalent capacitance of the filter cfu be, must be between the oscillator oscillation frequency Clapp (f 0 , here 100Mhz) and twice the same frequency (here 200 MHz), so as not to select higher order harmonics. This translates into the equation:
- a second condition to be imposed on the filtering module 8 is the phase shift of 1 80 ° at the output of the filtering module 8.
- the transfer function of the LC filter is calculated which is given by:
- the transfer function H is required to be a negative real number, which results in:
- the two conditions set allow to have possible values for L5 and CFLi be -
- the design of the capacitive divider bridge 7 consists in determining the values of the fourth capacitor C4, the seventh capacitor C7 and the eighth capacitor C8. We take note that :
- the sizing method of the gate driver components is identical for a Colpitts oscillator, shown in Figure 4. The Colpitts oscillator differs from the Clapp oscillator by one less capacitor (the fifth capacitor C5 ), which has an influence on the numerical values of the different components of the gate driver.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
CONVERTISSEUR DE PUISSANCE A TRES HAUTE FREQUENCE DE POWER CONVERTER WITH HIGH FREQUENCY OF
COMMUTATION SWITCHING
L'invention porte sur un convertisseur de puissance à très haute fréquence de commutation, ainsi que sur un procédé de conversion de puissance à très haute fréquence de commutation. L'invention trouve son application en particulier dans la conversion d'une tension continue en une tension alternative ou continue, dans des gammes de fréquence radio HF et VHF (de 3 à 300 MHz, et notamment la bande libre à 27 MHz). La commutation du convertisseur dans les gammes de fréquence radio permet de réduire la taille des composants réactifs (inductances, condensateurs) des circuits de conversion de puissance, et de réduire ainsi le volume global de la chaîne de conversion de puissance, ce qui peut être avantageux pour des applications où la compacité et la masse sont des contraintes importantes. The invention relates to a very high frequency switching power converter, as well as to a very high frequency switching power conversion method. The invention finds its application in particular in the conversion of a DC voltage to an AC or DC voltage, in HF and VHF radio frequency ranges (from 3 to 300 MHz, and in particular the free band at 27 MHz). Switching the converter in the radio frequency ranges makes it possible to reduce the size of the reactive components (inductors, capacitors) of the power conversion circuits, and thus reduce the overall volume of the power conversion chain, which may be advantageous. for applications where compactness and mass are important constraints.
Dans les circuits de conversion de puissance, la commutation est réalisée avec un interrupteur de puissance, notamment avec un transistor à effet de champ. Le transistor commute de l'état passant à l'état bloqué ou inversement, grâce à un circuit de pilotage dénommé circuit d'attaque de grille (ou « gâte driver » dans la terminologie anglo-saxonne). En règle générale, dans les convertisseurs de puissance, une ou plusieurs résistances peuvent être rajoutées sur la grille du transistor afin de maîtriser les variations de tension ou de courant sur le transistor au démarrage du convertisseur (structure dite non-résonante). A chaque ordre de commutation transmis par le circuit d'attaque de grille au transistor, il y a une dissipation d'énergie dans la ou les résistances ajoutées sur la grille du transistor. Pour des fréquences de commutation de l'ordre de la dizaine ou de la centaine de kHz, la somme des pertes dues à la dissipation peuvent être considérées comme négligeables sur une durée donnée. En revanche, sur une même durée, la somme des pertes dues à la dissipation est beaucoup plus importante pour des fréquences de commutation de l'ordre de la dizaine ou de la centaine de MHz. Afin de réduire ce genre de dissipations, et d'éviter par la suite de dégrader le rendement du convertisseur, un circuit d'attaque de grille ayant une structure dite résonante peut être employée, à partir de composants passifs de stockage d'énergie (condensateurs et inductances), au lieu d'utiliser une structure non-résonante. La structure résonante, contrairement à la structure non résonante, permet de stocker de l'énergie au cours d'une phase de commutation du transistor, et de la restituer au cours de la phase suivante au lieu de la dissiper dans les éléments parasites du transistor. In the power conversion circuits, the switching is performed with a power switch, in particular with a field effect transistor. The transistor switches from the on state to the off state or vice versa, thanks to a control circuit called gate driver circuit (or "driver driver" in the English terminology). As a rule, in the power converters, one or more resistors can be added to the gate of the transistor in order to control the voltage or current variations on the transistor at the start of the converter (so-called non-resonant structure). At each switching command transmitted by the gate driver to the transistor, there is a power dissipation in the one or more resistors added to the gate of the transistor. For switching frequencies of the order of ten or hundred kHz, the sum of the losses due to dissipation can be considered negligible over a given period. On the other hand, over the same duration, the sum of the losses due to the dissipation is much greater for switching frequencies of the order of ten or hundred MHz. In order to reduce this kind of dissipation, and to avoid later degrading the efficiency of the converter, a gate driver having a so-called resonant structure can be employed, from passive energy storage components (capacitors and inductors), instead of using a non-resonant structure. The resonant structure, in contrast to the non-resonant structure, makes it possible to store energy during a switching phase of the transistor, and to restore it during the next phase instead of dissipating it in the parasitic elements of the transistor. .
Il est par ailleurs courant d'utiliser des convertisseurs de classe E dans le domaine des très hautes fréquences (fréquences radio). Dans de tels convertisseurs, un réseau résonant, composé d'une inductance et d'un condensateur, est placé entre le drain du transistor et la résistance de charge. Les valeurs des composants du réseau résonant et de la capacité de sortie (également appelée capacité shunt) du transistor sont sélectionnés de telle sorte que la tension VDs aux bornes du transistor soit nulle lors de chaque commutation du transistor, de l'état passant à l'état bloqué et inversement. Les pertes dans un transistor étant dues au produit de la tension à ses bornes par le courant le traversant, une tension nulle à chaque commutation permet de minimiser les pertes. Un tel fonctionnement du convertisseur sans pertes de commutation est dit en commutation douce (ZVS ou « Zéro Voltage Switching » dans la terminologie anglo-saxonne). Le document WO 2014067915 décrit un circuit d'attaque de grille pour un convertisseur de classe E. Le circuit d'attaque de grille utilise la tension drain-source Vds pour commander la grille du transistor et générer ainsi un signal de commutation, et sans utiliser de source de tension auxiliaire. Le circuit d'attaque de grille est dit « auto-oscillant ». It is also common to use class E converters in the field of very high frequencies (radio frequencies). In such converters, a resonant network, composed of an inductor and a capacitor, is placed between the drain of the transistor and the load resistor. The values of the components of the resonant network and of the output capacitance (also called shunt capacitance) of the transistor are selected such that the voltage V D s across the transistor is zero at each switching of the transistor, the on-state in the off state and vice versa. The losses in a transistor being due to the product of the voltage at its terminals by the current passing through it, a zero voltage at each switching makes it possible to minimize the losses. Such an operation of the converter without loss of switching is said in soft switching (ZVS or "Zero Voltage Switching" in the English terminology). WO 2014067915 discloses a gate drive circuit for a class E converter. The gate drive circuit uses the drain-source voltage Vds to drive the gate of the transistor and thereby generate a switching signal, and without using auxiliary voltage source. The gate driver circuit is said to be "self-oscillating".
Un des inconvénients de la classe E réside toutefois dans la présence d'une bobine d'arrêt, connectée à la source de tension à convertir, et dont le rôle est notamment d'avoir un courant le plus constant possible en régime permanent, et transformer ainsi la source de tension en source de courant. Pour assurer cette fonction, la bobine d'arrêt doit avoir une valeur élevée, ce qui empêche son intégration sur un circuit imprimé. La bobine d'arrêt doit être alors agencée séparément du convertisseur, ce qui rajoute de la masse, et peut être rédhibitoire pour certaines applications où la masse est un paramètre critique. Un deuxième inconvénient lié à la classe E réside dans la très grande contrainte en tension sur le transistor. La tension drain-source (Vds) est en effet environ égale à quatre fois la tension d'entrée, ce qui implique d'utiliser un transistor avec une résistance à l'état passant RDSON relativement élevée, affectant le rendement du transistor. Le convertisseur de classe Φ2 (Phi2) permet de résoudre les inconvénients précités. Un convertisseur de classe Φ2, illustré par la figure 1 , comprend une inductance d'entrée L1 , connectée à la source de tension V|N à convertir, et ayant une valeur de même ordre de grandeur que l'inductance L3 du réseau résonant L3-C3. Il comprend par ailleurs un filtre L2-C1 , la fréquence de résonnance du filtre L2-C1 étant égale à deux fois la fréquence de commutation du transistor. La grille du transistor est commandée par le circuit d'attaque de grille 12. Le filtre L2-C1 est ajouté en parallèle du transistor afin de court-circuiter le second harmonique de la tension drain- source du transistor et réduire ainsi la contrainte en tension sur le transistor. Une telle structure est facilement intégrable sur circuit imprimé, du fait de la valeur réduite de l'inductance d'entrée. L'absence d'inductance de forte valeur (la bobine d'arrêt dans le convertisseur de classe E) permet par ailleurs d'obtenir un transitoire plus court, ce qui peut être avantageux pour réaliser des appels de puissance rapides dans le convertisseur. La figure 2 illustre la forme d'onde de la tension drain-source Vds dans un convertisseur de la classe Φ2, à une fréquence de commutation de 30 MHz. Lors de la commutation (à environ 34 ns sur la figure 2), la tension Vds est quasiment nulle, la condition de commutation douce (ZVS) est ainsi respectée. Par ailleurs, la dérivée temporelle de la tension Vds est également quasiment nulle, ce qui permet d'obtenir un fonctionnement du convertisseur avec un rendement maximal. La tension d'entrée est égale à 20 V, et la tension drain- source est égale à environ deux fois la tension d'entrée, ce qui limite la contrainte en tension sur le transistor. En diminuant la contrainte de tension, il est alors possible soit de gagner en rendement, avec une résistance à l'état passant RDSON plus faible que pour un convertisseur de la classe E, soit de gagner en compacité, en diminuant la taille de la puce sur laquelle se trouvent les différents éléments du circuit de conversion. De plus, la contrainte en tension plus faible permet de considérer la capacité parasite comme étant plus stable en valeur, ce qui facilite sa modélisation. Le circuit d'attaque de grille, décrit précédemment dans le document WO 201 406791 5, est bien adapté à un convertisseur de classe E. Toutefois ce circuit d'attaque de grille ne convient pas aux formes d'ondes des convertisseurs de la classe Φ2. However, one of the disadvantages of class E lies in the presence of a choke coil, connected to the voltage source to be converted, whose role is notably to have a current that is as constant as possible in steady state, and to transform thus the source of voltage in current source. To ensure this function, the choke coil must have a value high, which prevents its integration on a printed circuit board. The choke coil must then be arranged separately from the converter, which adds mass, and can be unacceptable for certain applications where the mass is a critical parameter. A second drawback related to the class E lies in the very large voltage stress on the transistor. The drain-source voltage (Vds) is in fact approximately equal to four times the input voltage, which implies using a transistor with a relatively high RDSON resistance, affecting the transistor efficiency. The class converter Φ2 (Phi2) solves the aforementioned drawbacks. A class Φ2 converter, illustrated in FIG. 1, comprises an input inductor L1, connected to the voltage source V | N to be converted, and having a value of the same order of magnitude as the inductance L3 of the resonant network L3-C3. It furthermore comprises a filter L2-C1, the resonant frequency of the filter L2-C1 being equal to twice the switching frequency of the transistor. The gate of the transistor is controlled by the gate drive circuit 12. The L2-C1 filter is added in parallel with the transistor in order to short-circuit the second harmonic of the drain-source voltage of the transistor and thus reduce the voltage stress. on the transistor. Such a structure is easily integrated on a printed circuit, because of the reduced value of the input inductor. The absence of high value inductance (the choke coil in the class E converter) also makes it possible to obtain a shorter transient, which can be advantageous for making fast power calls in the converter. Figure 2 illustrates the waveform of the drain-source voltage Vds in a class Φ2 converter at a switching frequency of 30 MHz. When switching (at about 34 ns in Figure 2), the voltage Vds is almost zero, the smooth switching condition (ZVS) is thus respected. Moreover, the time derivative of the voltage Vds is also almost zero, which makes it possible to obtain operation of the converter with maximum efficiency. The input voltage is equal to 20 V, and the drain-source voltage is equal to about twice the input voltage, which limits the voltage stress on the transistor. By decreasing the voltage stress, it is then possible either to gain in efficiency, with a lower RDSON on-state resistance than for a class E converter, or to gain compactness, by decreasing the size of the chip on which are the different elements of the conversion circuit. In addition, the lower voltage stress makes it possible to consider the parasitic capacitance as being more stable in value, which facilitates its modeling. The gate driver, described previously in WO 201 406791 5, is well suited to a class E converter. However, this gate driver is not suitable for waveforms of class Φ2 converters. .
Un circuit d'attaque de grille pour convertisseur de classe Φ2 est décrit dans le document WO 2007/082090. Le circuit divulgué dans ce document permet de générer un signal de commutation (sinusoïdal ou carré) pour la grille du transistor du convertisseur de la classe Φ2. Il utilise pour cela un transistor additionnel, en plus du transistor du convertisseur, ce qui introduit des éléments parasites dans le circuit, rendant potentiellement instable la fréquence de commutation du transistor. Le circuit divulgué comprend par ailleurs une source de tension externe, en plus de la source de tension continue à convertir, ce qui augmente la masse globale du convertisseur. A gate driver for class Φ2 converter is described in WO 2007/082090. The circuit disclosed in this document makes it possible to generate a switching signal (sinusoidal or square) for the transistor transistor gate of the class Φ2. It uses for this an additional transistor, in addition to the transistor of the converter, which introduces parasitic elements into the circuit, potentially making the switching frequency of the transistor unstable. The disclosed circuit further includes an external voltage source, in addition to the DC voltage source to be converted, which increases the overall weight of the converter.
Un objet de l'invention est donc d'obtenir un circuit d'attaque de grille auto-oscillant, à savoir ne faisant pas intervenir de source de tension additionnel ou de transistor additionnel, pour un convertisseur de tension continue de classe Φ2. An object of the invention is therefore to obtain a self-oscillating gate drive circuit, namely not involving an additional voltage source or additional transistor, for a DC voltage converter class Φ2.
Un objet de l'invention permettant d'atteindre ce but, partiellement ou totalement, est un convertisseur de puissance résonant d'une tension d'entrée continue en tension de sortie alternative ou continue, comprenant un interrupteur de puissance muni d'une électrode de commande, d'une première électrode et d'une deuxième électrode reliée à la masse du convertisseur, et une première inductance connectée à un port d'entrée pour une tension continue à convertir, la première électrode étant connectée au port d'entrée par l'intermédiaire de la première inductance, le convertisseur comprenant en outre un premier réseau résonant, connecté entre la première électrode de l'interrupteur de puissance et la masse, le premier réseau résonant étant configuré pour extraire la composante fondamentale d'une tension entre la première électrode et la deuxième électrode de l'interrupteur de puissance et pour la déphaser d'un angle de déphasage tel que ladite composante fondamentale et la tension entre la première électrode et la deuxième électrode soient en opposition de phase et générer ainsi un signal sinusoïdal de pilotage, le convertisseur comprenant par ailleurs un pont diviseur capacitif connecté entre le premier réseau résonant et l'électrode de commande de l'interrupteur de puissance afin de limiter l'amplitude du signal sinusoïdal de pilotage pour l'électrode de commande de l'interrupteur de puissance. An object of the invention making it possible to achieve this goal, partially or totally, is a resonant power converter of a continuous input voltage in AC or DC output voltage, comprising a power switch provided with a control, a first electrode and a second electrode connected to the ground of the converter, and a first inductor connected to an input port for a DC voltage to be converted, the first electrode being connected to the input port through the first inductor, the converter further comprising a first connected resonant network between the first electrode of the power switch and the ground, the first resonant network being configured to extract the fundamental component of a voltage between the first electrode and the second electrode of the power switch and to phase out a phase shift angle such that said fundamental component and the voltage between the first electrode and the second electrode are in phase opposition and thus generate a sinusoidal control signal, the converter further comprising a capacitive divider bridge connected between the first resonant network and the power switch control electrode to limit the amp study of the sinusoidal control signal for the control electrode of the power switch.
Avantageusement, le premier réseau résonant comprend un réseau oscillant configuré pour générer et maintenir, avec l'interrupteur de puissance, des oscillations à une fréquence de commutation souhaitée, ainsi qu'un module de filtrage de la composante continue desdites oscillations, connecté entre le réseau oscillant et le pont diviseur. Advantageously, the first resonant network comprises an oscillating network configured to generate and maintain, with the power switch, oscillations at a desired switching frequency, as well as a filtering module for the DC component of said oscillations, connected between the network oscillating and the divider bridge.
Avantageusement, l'angle de déphasage est sensiblement égal à 180°. Advantageously, the phase shift angle is substantially equal to 180 °.
Avantageusement, le convertisseur comprend un premier circuit résonant série, connecté entre la première électrode et la masse, et configuré pour résonner à une fréquence égale au double de la fréquence de commutation. Advantageously, the converter comprises a first series resonant circuit, connected between the first electrode and the ground, and configured to resonate at a frequency equal to twice the switching frequency.
Avantageusement, le premier circuit résonant série comprend un premier condensateur et une deuxième inductance. Avantageusement, le drain est connecté à un port de sortie de la tension convertie l'intermédiaire d'un deuxième circuit résonant série. Avantageusement, le deuxième circuit résonant série comprend une troisième inductance connectée en série à un troisième condensateur. Advantageously, the first series resonant circuit comprises a first capacitor and a second inductor. Advantageously, the drain is connected to an output port of the converted voltage via a second series resonant circuit. Advantageously, the second series resonant circuit comprises a third inductance connected in series with a third capacitor.
Avantageusement, le réseau oscillant comprend un deuxième condensateur en parallèle avec un ensemble composé d'une quatrième inductance connectée en série à un cinquième condensateur et à un sixième condensateur, formant un oscillateur de Clapp avec le transistor, le module de filtrage étant connecté au réseau oscillant aux bornes du sixième condensateur. Advantageously, the oscillating network comprises a second capacitor in parallel with an assembly composed of a fourth inductance connected in series with a fifth capacitor and with a sixth capacitor, forming a Clapp oscillator with the transistor, the filtering module being connected to the network. oscillating across the sixth capacitor.
Avantageusement, le réseau oscillant comprend un deuxième condensateur en parallèle avec un ensemble composé d'une quatrième inductance connectée en série à un sixième condensateur, formant un oscillateur de Colpitts avec le transistor, le module de filtrage étant connecté au réseau oscillant aux bornes du sixième condensateur. Advantageously, the oscillating network comprises a second capacitor in parallel with an assembly composed of a fourth inductance connected in series with a sixth capacitor, forming a Colpitts oscillator with the transistor, the filtering module being connected to the oscillating network at the terminals of the sixth capacitor.
Avantageusement, le module de filtrage forme un filtre LC passe-bas, composé d'une cinquième inductance connectée au sixième condensateur et au pont diviseur, et d'un septième condensateur connecté au pont diviseur et à la masse. Advantageously, the filter module forms a low-pass LC filter, composed of a fifth inductor connected to the sixth capacitor and the divider bridge, and a seventh capacitor connected to the divider bridge and ground.
Avantageusement, le pont diviseur capacitif comprend un huitième condensateur, connecté au premier réseau résonant et à l'électrode de commande de l'interrupteur de puissance, et un quatrième condensateur, connecté entre l'électrode de commande de l'interrupteur de puissance et la masse. Avantageusement, la fréquence de commutation est fixée entre 3 MHz et 300 MHz. Advantageously, the capacitive divider bridge comprises an eighth capacitor, connected to the first resonant network and the control electrode of the power switch, and a fourth capacitor, connected between the control electrode of the power switch and the mass. Advantageously, the switching frequency is set between 3 MHz and 300 MHz.
Un autre objet de l'invention est un procédé de conversion de puissance d'une tension d'entrée continue en tension de sortie alternative ou continue dans un convertisseur de puissance résonant comprenant un interrupteur de puissance muni d'une électrode de commande, d'une première électrode et d'une deuxième électrode reliée à la masse du convertisseur, et une première inductance connectée à un port d'entrée pour une tension continue à convertir, la première électrode étant connectée au port d'entrée par l'intermédiaire de la première inductance, le procédé comprenant les étapes suivantes : Another object of the invention is a method of converting power from a DC input voltage into AC or DC output voltage in a resonant power converter comprising a power switch provided with a control electrode, a first electrode and a second electrode connected to the ground of the converter, and a first inductance connected to an input port for a DC voltage to be converted, the first electrode being connected to the input port via the first inductance, the method comprising the following steps:
- Extraction, par un premier réseau résonant, connecté entre la première électrode de l'interrupteur de puissance et la masse, de la composante fondamentale d'une tension entre la première électrode et la deuxième électrode de l'interrupteur de puissance, Extracting, by a first resonant network, connected between the first electrode of the power switch and the ground, the fundamental component of a voltage between the first electrode and the second electrode of the power switch,
- Déphasage de la composante fondamentale d'un angle de déphasage tel que ladite composante fondamentale et la tension entre la première électrode et la deuxième électrode soient en opposition de phase, ladite composante fondamentale déphasée formant un signal sinusoïdal de pilotage, - Phase-shifting of the fundamental component of a phase shift angle such that said fundamental component and the voltage between the first electrode and the second electrode are in phase opposition, said phase-shifted fundamental component forming a sinusoidal control signal,
- Réduction de l'amplitude du signal sinusoïdal de pilotage pour l'électrode de commande de l'interrupteur de puissance.. Avantageusement, le procédé comprend en outre une étape initiale de génération et de maintien d'oscillations à une fréquence de commutation de l'interrupteur de puissance. - Reduction of the amplitude of the sinusoidal control signal for the control electrode of the power switch. Advantageously, the method further comprises an initial step of generating and maintaining oscillations at a switching frequency of the power switch. power switch.
Avantageusement, le procédé comprend en outre une étape de filtrage de la composante continue desdites oscillations, entre l'étape de déphasage de la composante fondamentale et l'étape de réduction de l'amplitude du signal. D'autres caractéristiques, détails et avantages de l'invention ressortiront à la lecture de la description faite en référence aux dessins annexés donnés à titre d'exemple : Advantageously, the method further comprises a step of filtering the DC component of said oscillations between the phase shift step of the fundamental component and the step of reducing the amplitude of the signal. Other features, details and advantages of the invention will emerge on reading the description made with reference to the accompanying drawings given by way of example:
- la figure 1 représente un convertisseur de classe Φ2. la figure 2 représente une forme d'onde de la tension drain-source VDs d'un convertisseur de classe Φ2. - Figure 1 shows a class converter Φ2. FIG. 2 represents a waveform of the drain-source voltage V D s of a class Φ2 converter.
la figure 3 représente un circuit électrique d'un convertisseur de classe Φ2 équipé d'un circuit d'attaque de grille selon un premier mode de réalisation de l'invention, fonctionnant avec un oscillateur de Clapp. FIG. 3 represents an electrical circuit of a class Φ2 converter equipped with a gate driver circuit according to a first embodiment of the invention, operating with a Clapp oscillator.
la figure 4 représente un circuit électrique d'un convertisseur de classe Φ2 équipé d'un circuit d'attaque de grille selon un deuxième mode de réalisation de l'invention, fonctionnant avec un oscillateur de Colpitts. FIG. 4 represents an electrical circuit of a class Φ2 converter equipped with a gate driver according to a second embodiment of the invention, operating with a Colpitts oscillator.
la figure 5 représente schématiquement les différentes étapes d'un procédé selon l'invention. FIG. 5 schematically represents the various steps of a method according to the invention.
L'invention est décrite dans le cas où l'interrupteur de puissance est un transistor à effet de champ (par exemple MOSFET, JFET). Le substrat du transistor peut être réalisé en nitrure de gallium (GaN), en carbure de silicium (SiC), ou avec tout autre matériau. Le drain, la source et la grille mentionnés dans la description peuvent être désignés de façon plus générale respectivement par une première électrode, une deuxième électrode et une électrode de commande. L'invention peut ainsi également s'appliquer à d'autres types d'interrupteurs de puissance (par exemple un transistor de type IGBT, un transistor bipolaire ou encore un thyristor). La figure 3 représente un circuit électrique d'un convertisseur de classe Φ2 équipé d'un circuit d'attaque de grille selon un premier mode de réalisation de l'invention. Une tension continue Vin est appliquée à l'entrée du convertisseur, entre le port d'entrée de la tension à convertir 9 et la masse GND. Une première inductance L1 est connectée entre le port d'entrée 9 est un nœud 1 1 auquel est connecté le drain du transistor 2 à faire commuter à une fréquence de commutation f0. Une deuxième inductance L2 et un premier condensateur C1 forment un premier circuit résonant série 3, connecté entre le nœud 1 1 et la masse GND, et configuré pour résonner à une fréquence égale au double de la fréquence de commutation f0 du transistor, ce qui correspond sensiblement au deuxième harmonique de la fréquence de commutation f0, afin de réduire la contrainte en tension sur le transistor. The invention is described in the case where the power switch is a field effect transistor (for example MOSFET, JFET). The transistor substrate may be made of gallium nitride (GaN), silicon carbide (SiC), or any other material. The drain, the source and the grid mentioned in the description can be designated more generally respectively by a first electrode, a second electrode and a control electrode. The invention can thus also be applied to other types of power switches (for example an IGBT type transistor, a bipolar transistor or a thyristor). FIG. 3 represents an electrical circuit of a class Φ2 converter equipped with a gate driver circuit according to a first embodiment of the invention. Vin continuous voltage is applied to the input of converter, between the input port of the voltage to be converted 9 and GND ground. A first inductor L1 is connected between the input port 9 is a node 1 1 which is connected to the drain of the transistor 2 to be switched at a switching frequency f 0 . A second inductor L2 and a first capacitor C1 form a first series resonant circuit 3, connected between node 1 1 and ground GND, and configured to resonate at a frequency equal to twice the switching frequency f 0 of the transistor, which corresponds substantially to the second harmonic of the switching frequency f 0 , in order to reduce the voltage stress on the transistor.
Un deuxième circuit résonant série 4, comprenant une troisième inductance L3 connectée en série à un troisième condensateur C3, est connecté entre le nœud 1 1 et le port de sortie 10 de la tension convertie. La tension convertie est schématisée sur la figure 3 par une résistance de charge R1 . Le deuxième condensateur C2 représente la capacité de sortie du transistor Cp, représentée figure 1 , ainsi qu'un condensateur additionnel optionnel Copt, non représenté. Plus la fréquence de commutation est élevée, plus la capacité du deuxième condensateur C2 est petite ; le deuxième condensateur C2 peut alors être composé uniquement de la capacité parasite Cp, sans avoir à ajouter de condensateur additionnel optionnel Copt. Le deuxième condensateur C2, le cinquième condensateur C5, la quatrième inductance L4 et le sixième condensateur C6 forment un réseau oscillant 6. Le réseau oscillant 6 selon l'invention utilise ainsi avantageusement certains composants parasites du transistor, notamment sa capacité de sortie Cp. L'ensemble composé du réseau oscillant 6 et du transistor 2 forme un oscillateur de Clapp, dont le rôle est de créer des oscillations à partir de la tension d'entrée continue Vin. Les oscillations sont entretenues dans le circuit d'attaque de grille, à une fréquence donnée f0. L'oscillateur de Clapp a l'avantage d'être particulièrement stable en fréquence, notamment dans la gamme de fréquences radio. Par simplification de la représentation du réseau oscillant 6, le deuxième condensateur C2 est représenté entre le premier circuit résonant série 3 et la branche du réseau oscillant 6 composée du cinquième condensateur C5, de la quatrième inductance L4 et du sixième condensateur C6. Toutefois, le deuxième condensateur C2 pourrait également être représenté « à droite » du transistor, pour mieux illustrer le fait qu'il représente en partie la capacité de sortie du transistor Cp. A second series 4 resonant circuit, comprising a third inductor L3 connected in series with a third capacitor C3, is connected between the node 1 1 and the output port 10 of the converted voltage. The converted voltage is shown diagrammatically in FIG. 3 by a load resistor R1. The second capacitor C2 represents the output capacitance of the transistor Cp, represented in FIG. 1, as well as an optional additional capacitor Copt, not shown. The higher the switching frequency, the smaller the capacity of the second capacitor C2; the second capacitor C2 can then be composed solely of the parasitic capacitance Cp, without having to add an optional additional capacitor Copt. The second capacitor C2, the fifth capacitor C5, the fourth inductor L4 and the sixth capacitor C6 form an oscillating network 6. The oscillating network 6 according to the invention thus advantageously uses certain parasitic components of the transistor, in particular its output capacitance Cp. The assembly composed of the oscillating network 6 and the transistor 2 forms a Clapp oscillator whose role is to create oscillations from the continuous input voltage Vin. The oscillations are maintained in the gate driver circuit at a given frequency f 0 . The Clapp oscillator has the advantage of being particularly stable in frequency, especially in the radio frequency range. To simplify the representation of the oscillating network 6, the second capacitor C2 is represented between the first series 3 resonant circuit and the branch of the oscillating network 6 composed of the fifth capacitor C5, fourth inductor L4 and sixth capacitor C6. However, the second capacitor C2 could also be shown "right" of the transistor, to better illustrate that it partially represents the output capacitance of the transistor Cp.
Un module de filtrage 8 de type LC passe-bas, composé d'une cinquième inductance L5 et d'un septième condensateur C7, prélève en entrée la tension aux bornes du sixième condensateur C6 ; le signal de sortie du module de filtrage 8 est récupéré aux bornes du septième condensateur C7. Le rôle de ce module de filtrage 8 est d'extraire la composante fondamentale du signal de tension drain-source Vds reçu par l'oscillateur de Clapp, dont la forme d'onde est illustrée à la figure 2, pour en retirer tous les harmoniques. Par ailleurs, les valeurs des éléments réactifs (condensateurs et inductances) du module de filtrage 8 et du réseau oscillant 6 sont déterminés de façon à ce que la composante fondamentale du signal de tension drain- source Vds, à la sortie du module de filtrage 8, et la tension drain-source Vds, soient en opposition de phase, de préférence déphasée d'une valeur sensiblement égale à 180°. Un pont diviseur capacitif 7, composé d'un quatrième condensateur C4 et d'un huitième condensateur C8, permet à la fois de supprimer la composante continue de la tension aux bornes du septième condensateur C7, et de réduire l'amplitude du signal issu du circuit d'attaque de grille. La valeur du quatrième condensateur C4 est déterminée selon la composante continue à supprimer. La valeur du huitième condensateur C8 est déterminée selon la réduction d'amplitude à appliquer. On retrouve ainsi un signal sinusoïdal de pilotage en sortie du pont diviseur capacitif 7. A low-pass LC type filtering module 8, composed of a fifth inductor L5 and a seventh capacitor C7, takes the voltage at the terminals of the sixth capacitor C6 as input; the output signal of the filter module 8 is recovered at the terminals of the seventh capacitor C7. The role of this filtering module 8 is to extract the fundamental component of the drain-source voltage signal Vds received by the Clapp oscillator, whose waveform is illustrated in FIG. 2, to remove all the harmonics therefrom. . Moreover, the values of the reactive elements (capacitors and inductances) of the filtering module 8 and of the oscillating network 6 are determined so that the fundamental component of the drain-source voltage signal Vds at the output of the filtering module 8 , and the drain-source voltage Vds, are in phase opposition, preferably out of phase by a value substantially equal to 180 °. A capacitive divider bridge 7, composed of a fourth capacitor C4 and an eighth capacitor C8, makes it possible both to suppress the DC component of the voltage at the terminals of the seventh capacitor C7, and to reduce the amplitude of the signal coming from the gate attack circuit. The value of the fourth capacitor C4 is determined according to the DC component to be suppressed. The value of the eighth capacitor C8 is determined according to the amplitude reduction to be applied. There is thus a sinusoidal control signal at the output of the capacitive divider bridge 7.
Le signal sinusoïdal de pilotage représente le signal de sortie du circuit d'attaque de grille. En référence à la figure 2, lorsque la tension Vds est non-nulle, le déphasage de 180° et la suppression de la composante continue aboutissent à un signal sinusoïdal de pilotage inférieur à la tension de seuil (Vgsth) du transistor. Le transistor est donc dans l'état bloqué, et donc aucun courant ne le traverse. Toujours en référence à la figure 2, lorsque la tension Vds est nulle ou quasiment nulle (par exemple inférieur à un certain seuil), le signal sinusoïdal de pilotage est supérieur à la tension de seuil (Vgsth) du transistor, et le transistor devient passant, avec ainsi un courant non nul qui le traverse. Le fonctionnement du convertisseur en commutation douce (ZVS) est donc bien respecté, limitant les pertes par commutation, sans qu'il ne soit nécessaire d'employer une source de tension supplémentaire ou d'autres composants actifs. Le circuit d'attaque de grille est alors dit auto-oscillant. The sinusoidal control signal represents the output signal of the gate drive circuit. With reference to FIG. 2, when the voltage Vds is non-zero, the phase shift of 180 ° and the suppression of the DC component result in a sinusoidal control signal that is lower than the threshold voltage (Vgsth) of the transistor. The transistor is therefore in the off state, and therefore no current flows through it. Still with reference to FIG. 2, when the voltage Vds is zero or almost zero (for example less than a certain threshold), the sinusoidal control signal is greater than the threshold voltage (Vgsth) of the transistor, and the transistor turns on. , with a non-zero current passing through it. The operation of the soft switching converter (ZVS) is therefore well respected, limiting switching losses, without the need to use an additional voltage source or other active components. The gate driver circuit is then said to be self-oscillating.
Le mode de réalisation illustré par la figure 4 diffère du mode de réalisation illustré par la figure 3 de par le réseau oscillant. Dans la figure 4, le transistor 2 et le réseau oscillant 6' forment un oscillateur de Colpitts. L'oscillateur de Colpitts comprend un condensateur en moins par rapport à l'oscillateur de Clapp Le fait d'avoir un condensateur en moins permet avantageusement de réduire les dissipations dues aux éléments parasites du condensateur, et d'augmenter ainsi le rendement du convertisseur, avec par ailleurs une masse plus faible. Les valeurs numériques de la quatrième inductance L4', du sixième condensateur C6', de la cinquième inductance L5' et du septième condensateur C7' peuvent différer des valeurs numériques des composants correspondants de l'oscillateur de Clapp, pour tenir compte de l'absence du cinquième condensateur C5. The embodiment illustrated in FIG. 4 differs from the embodiment illustrated in FIG. 3 by the oscillating network. In FIG. 4, the transistor 2 and the oscillating network 6 'form a Colpitts oscillator. The Colpitts oscillator comprises one less capacitor with respect to the Clapp oscillator. Having one less capacitor advantageously makes it possible to reduce the dissipations due to parasitic elements of the capacitor, and thus to increase the efficiency of the converter. with a lower mass. The digital values of the fourth inductance L4 ', the sixth capacitor C6', the fifth inductance L5 'and the seventh capacitor C7' may differ from the numerical values of the corresponding components of the Clapp oscillator, to take account of the absence of the fifth capacitor C5.
La figure 5 illustre schématiquement les différentes étapes du procédé de conversion de puissance selon l'invention. A l'étape 100, le réseau oscillant (6, 6') et le transistor 2 génèrent et entretiennent, dès la présence d'une tension continue Vin, des oscillations à une fréquence de commutation f0 du transistor 2. A l'étape 101 , le premier réseau résonant 5 extrait la composante fondamentale de la tension drain-source VDs du transistor 2. A l'étape 102, la composante fondamentale de la tension drain- source VDs du transistor est déphasée d'un angle de déphasage tel que ladite composante fondamentale et la tension drain-source VDs soient en opposition de phase. A l'étape 103, la composante continue de la composante fondamentale déphasée est filtrée par le pont diviseur capacitif 7, pour obtenir un signal sinusoïdal de pilotage de la grille du transistor 2. L'amplitude de ce signal peut être limitée à l'étape 104, par rapport au niveau requis par la grille du transistor 2. FIG. 5 diagrammatically illustrates the different steps of the power conversion method according to the invention. In step 100, the oscillating network (6, 6 ') and the transistor 2 generate and maintain, in the presence of a direct voltage Vin, oscillations at a switching frequency f 0 of the transistor 2. At step 101, the first resonant network 5 extracts the fundamental component of the drain-source voltage V D s of transistor 2. In step 102, the fundamental component of the drain-source voltage V D s of the transistor is phase shifted by an angle of phase shift such that said fundamental component and the drain-source voltage V D s are in opposition phase. In step 103, the DC component of the phase-shifted fundamental component is filtered by the capacitive divider bridge 7, in order to obtain a sinusoidal control signal for the gate of the transistor 2. The amplitude of this signal can be limited to the stage 104, compared to the level required by the gate of transistor 2.
Le paragraphe suivant décrit un exemple non limitatif de méthode de dimensionnement des composants du circuit d'attaque de grille, pour une fréquence d'oscillation f0 égale à 100 MHz, en tenant compte des valeurs numériques des composants de la structure Φ2 du convertisseur à cette fréquence. The following paragraph describes a nonlimiting example of a method for dimensioning the components of the gate driver circuit, for an oscillation frequency f 0 equal to 100 MHz, taking into account the numerical values of the components of the structure Φ2 of the converter. this frequency.
Pour une tension continue d'entrée de 20 V, et délivrant une puissance de sortie d'environ 2 W à une charge résistive de 100 Ω, on peut affecter à la première inductance la valeur de 5 nH, à la deuxième inductance la valeur de 3,3 nH, au premier condensateur la valeur de 188 pF, à la troisième inductance la valeur de 340 nH, et au troisième condensateur la valeur de 15 pF. Le dimensionnement de l'oscillateur de Clapp consiste à déterminer les valeurs du deuxième condensateur C2, du cinquième condensateur C5, de la quatrième inductance L4 et du sixième condensateur C6. Afin de réduire le courant absorbé dans le circuit d'attaque de grille, on fixe une valeur de la quatrième inductance L4 qui est très supérieure à celle de la première inductance L1 mais inférieure à celle de la troisième inductance L3. On peut donc fixer L4=100 nH. La valeur du deuxième condensateur C2 peut être donnée par la capacité de sortie du transistor 2, sensiblement égale à 200 pF. On peut ensuite poser C5 = C2 = 200 pF. For an input DC voltage of 20 V, and delivering an output power of about 2 W at a resistive load of 100 Ω, the value of 5 nH can be assigned to the first inductance, the second inductance the value of 3.3 nH, the first capacitor the value of 188 pF, the third inductor the value 340 nH, and the third capacitor the value 15 pF. The sizing of the Clapp oscillator consists in determining the values of the second capacitor C2, the fifth capacitor C5, the fourth inductance L4 and the sixth capacitor C6. In order to reduce the current absorbed in the gate drive circuit, a value of the fourth inductance L4 is set which is much greater than that of the first inductor L1 but smaller than that of the third inductor L3. We can therefore fix L4 = 100 nH. The value of the second capacitor C2 may be given by the output capacitance of the transistor 2, substantially equal to 200 pF. We can then put C5 = C2 = 200 pF.
La valeur du sixième condensateur C6 est calculée par la formule de la fréquence d'oscillation de l'oscillateur de Clapp : Connaissant la valeur de C2, C5, L4 ainsi que la fréquence d'oscillation que l'on veut fixer à 1 00 MHz, on trouve une valeur possible du sixième condensateur C6. Cette valeur peut être modifiée en fonction du dimensionnement des composants du module de filtrage 8. The value of the sixth capacitor C6 is calculated by the formula of the oscillation frequency of the Clapp oscillator: Knowing the value of C2, C5, L4 and the oscillation frequency that we want to set at 100 MHz, we find a possible value of the sixth capacitor C6. This value can be modified according to the sizing of the components of the filtering module 8.
Le dimensionnement du module de filtrage 8, du type filtre LC passe-bas, et dont le rôle est d'extraire la composante fondamentale du signal de tension drain-source reçu par l'oscillateur de Clapp et de le déphaser de 1 80°, consiste à déterminer la valeur de la cinquième inductance L5, et de la capacité équivalente du filtre Cfiitre du module de filtrage 8, qui tient compte du quatrième condensateur C4, du septième condensateur C7 et du huitième condensateur C8. Une première condition à imposer au module de filtrage 8 est que la fréquence de résonance du module de filtrage, déterminée par la cinquième inductance L5 et par la capacité équivalente du filtre Cfiitre, doit être comprise entre la fréquence d'oscillation de l'oscillateur de Clapp (f0, ici 100Mhz) et deux fois cette même fréquence (ici 200 MHz), afin de ne pas sélectionner les harmoniques d'ordre supérieur. Cela se traduit par l'équation : The sizing of the filter module 8, of the LC low-pass filter type, whose function is to extract the fundamental component of the drain-source voltage signal received by the Clapp oscillator and to phase shift it by 180 °, is to determine the value of the fifth inductor L5, and the equivalent capacitance of cfu filter be of the filtering module 8, which takes account of the fourth capacitor C4, capacitor C7 of the seventh and the eighth capacitor C8. A first condition to impose on the filtering module 8 is that the resonant frequency of the filter module, as determined by the fifth inductor L5 and the equivalent capacitance of the filter cfu be, must be between the oscillator oscillation frequency Clapp (f 0 , here 100Mhz) and twice the same frequency (here 200 MHz), so as not to select higher order harmonics. This translates into the equation:
1 1
2n^L . Cfiltre 2n ^ L. Cf ilter
Une deuxième condition à imposer au module de filtrage 8 est le déphasage de 1 80° en sortie du module de filtrage 8. Pour cela, on calcule la fonction de transfert du filtre LC qui est donnée par : A second condition to be imposed on the filtering module 8 is the phase shift of 1 80 ° at the output of the filtering module 8. For this, the transfer function of the LC filter is calculated which is given by:
Η(ω = 1 — Η (ω = 1 -
1— Lï>. Lfutre. ω 1- Lï>. Lfu be. ω
Où ω = 2π.ί0 Where ω = 2π.ί 0
Afin d'obtenir un déphasage de 1 80° à la sortie du module de filtrage 8, on impose à la fonction de transfert H d'être un nombre réel négatif, ce qui se traduit par : In order to obtain a phase shift of 1 80 ° at the output of the filtering module 8, the transfer function H is required to be a negative real number, which results in:
L5. C iltre■ L5. C iltre ■
Les deux conditions posées permettent d'avoir des valeurs possibles pour L5 et Cflitre- Le dimensionnement du pont diviseur capacitif 7 consiste à déterminer les valeurs du quatrième condensateur C4, du septième condensateur C7 et du huitième condensateur C8. On note que : The two conditions set allow to have possible values for L5 and CFLi be - The design of the capacitive divider bridge 7 consists in determining the values of the fourth capacitor C4, the seventh capacitor C7 and the eighth capacitor C8. We take note that :
C8. C4 C 8 . C 4
infiltre — † ϋ7i n filter - † ϋ 7
En définissant un rapport de réduction de 1 /9 pour le pont diviseur capacitif 7, on obtient alors : By defining a reduction ratio of 1/9 for the capacitive divider bridge 7, we obtain:
C4 = 8. C% C4 = 8. C %
On définit la valeur du quatrième condensateur C4 suivant la composante continue à supprimer du signal issu du module de filtrage. Pour une composante continue égale à 6V, une valeur de C4 = 200 pF peut convenir. On obtient une valeur de C8=1 600 pF, ce qui permet de déterminer la valeur du septième condensateur C7 à partir des valeurs possibles pour L5 et CfNtre définies précédemment. Il est à noter que le sixième condensateur C6, la cinquième inductance L5 et le septième condensateur C7 forment un filtre de Tchebychev. La valeur du sixième condensateur C6 peut alors être modifiée pour correspondre aux valeurs des coefficients normalisés du tableau de normalisation des composants de Tchebychev. La méthode de dimensionnement des composants du circuit d'attaque de grille est identique pour un oscillateur de Colpitts, illustré par la figure 4. L'oscillateur de Colpitts se distingue de l'oscillateur de Clapp par un condensateur en moins (le cinquième condensateur C5), ce qui a une influence sur les valeurs numériques des différents composants du circuit d'attaque de grille. The value of the fourth capacitor C4 is defined according to the DC component to be removed from the signal from the filtering module. For a DC component equal to 6V, a value of C4 = 200 pF may be suitable. A value of C8 = 1600 pF is obtained, which makes it possible to determine the value of the seventh capacitor C7 from the possible values for L5 and CfNtre defined above. It should be noted that the sixth capacitor C6, the fifth inductor L5 and the seventh capacitor C7 form a Chebyshev filter. The value of the sixth capacitor C6 can then be modified to correspond to the values of the normalized coefficients of the Chebyshev component normalization table. The sizing method of the gate driver components is identical for a Colpitts oscillator, shown in Figure 4. The Colpitts oscillator differs from the Clapp oscillator by one less capacitor (the fifth capacitor C5 ), which has an influence on the numerical values of the different components of the gate driver.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| FR1760531A FR3073343B1 (en) | 2017-11-09 | 2017-11-09 | POWER CONVERTER WITH HIGH FREQUENCY SWITCHING |
| PCT/EP2018/079741 WO2019091833A1 (en) | 2017-11-09 | 2018-10-30 | Power converter with a very high switching frequency |
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| US (1) | US11171556B2 (en) |
| EP (1) | EP3707814A1 (en) |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005304231A (en) * | 2004-04-14 | 2005-10-27 | Tokyo Coil Engineering Kk | Dc-dc converter and its output power increasing method |
| US20160013640A1 (en) * | 2014-07-14 | 2016-01-14 | Steven E. Summer | Radiation hardened active or circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4685041A (en) * | 1985-03-11 | 1987-08-04 | American Telephone And Telegraph Company, At&T Bell Laboratories | Resonant rectifier circuit |
| US4605999A (en) * | 1985-03-11 | 1986-08-12 | At&T Bell Laboratories | Self-oscillating high frequency power converter |
| WO2006119362A2 (en) * | 2005-05-03 | 2006-11-09 | Massachusetts Institute Of Technology | Methods and apparatus for resistance compression networks |
| US7889519B2 (en) * | 2006-01-12 | 2011-02-15 | Massachusetts Institute Of Technology | Methods and apparatus for a resonant converter |
| US9735676B2 (en) * | 2012-11-02 | 2017-08-15 | Danmarks Tekniske Universitet | Self-oscillating resonant power converter |
| CN106233606B (en) * | 2014-04-15 | 2019-04-19 | 丹麦技术大学 | Resonant DC-DC Power Converter Assembly |
| JP6467967B2 (en) * | 2015-02-16 | 2019-02-13 | Tdk株式会社 | Resonant inverter and switching power supply |
| JP6787071B2 (en) * | 2016-11-21 | 2020-11-18 | Tdk株式会社 | Power converter |
-
2017
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005304231A (en) * | 2004-04-14 | 2005-10-27 | Tokyo Coil Engineering Kk | Dc-dc converter and its output power increasing method |
| US20160013640A1 (en) * | 2014-07-14 | 2016-01-14 | Steven E. Summer | Radiation hardened active or circuit |
Non-Patent Citations (5)
| Title |
|---|
| AHN DUKJU ET AL: "Wireless Power Transmission With Self-Regulated Output Voltage for Biomedical Implant", IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 61, no. 5, 1 May 2014 (2014-05-01), pages 2225 - 2235, XP011530728, ISSN: 0278-0046, [retrieved on 20131018], DOI: 10.1109/TIE.2013.2273472 * |
| ANTHONY N LASKOVSKI ET AL: "Class-E self-oscillation for the transmission of wireless power to implants", SENSORS AND ACTUATORS A: PHYSICAL, ELSEVIER BV, NL, vol. 171, no. 2, 24 July 2011 (2011-07-24), pages 391 - 397, XP028327858, ISSN: 0924-4247, [retrieved on 20110802], DOI: 10.1016/J.SNA.2011.07.018 * |
| LUNDEN OLLI-PEKKA ET AL: "A simple closed-form analysis of clapp oscillator output power using a novel quasi-linear transistor model", 2014 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), IEEE, 19 January 2014 (2014-01-19), pages 88 - 90, XP032605332, DOI: 10.1109/RWS.2014.6830073 * |
| RIVAS J M ET AL: "A High-Frequency Resonant Inverter Topology with Low Voltage Stress", POWER ELECTRONICS SPECIALISTS CONFERENCE, 2007. PESC 2007. IEEE, IEEE, PISCATAWAY, NJ, USA, 17 June 2007 (2007-06-17), pages 2705 - 2717, XP031218688, ISBN: 978-1-4244-0654-8 * |
| See also references of WO2019091833A1 * |
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| FR3073343B1 (en) | 2019-10-11 |
| US20210194344A1 (en) | 2021-06-24 |
| US11171556B2 (en) | 2021-11-09 |
| FR3073343A1 (en) | 2019-05-10 |
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