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EP3353339A4 - STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER - Google Patents

STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER Download PDF

Info

Publication number
EP3353339A4
EP3353339A4 EP16849805.3A EP16849805A EP3353339A4 EP 3353339 A4 EP3353339 A4 EP 3353339A4 EP 16849805 A EP16849805 A EP 16849805A EP 3353339 A4 EP3353339 A4 EP 3353339A4
Authority
EP
European Patent Office
Prior art keywords
steam
techniques
vapor deposition
silicon carbide
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP16849805.3A
Other languages
German (de)
French (fr)
Other versions
EP3353339A1 (en
Inventor
Mark S. Land
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pallidus Inc
Original Assignee
Melior Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Melior Innovations Inc filed Critical Melior Innovations Inc
Priority to EP24168962.9A priority Critical patent/EP4407079A3/en
Publication of EP3353339A1 publication Critical patent/EP3353339A1/en
Publication of EP3353339A4 publication Critical patent/EP3353339A4/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
EP16849805.3A 2015-09-24 2016-09-23 STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER Ceased EP3353339A4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP24168962.9A EP4407079A3 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562232355P 2015-09-24 2015-09-24
PCT/US2016/053567 WO2017053883A1 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Division EP4407079A3 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Publications (2)

Publication Number Publication Date
EP3353339A1 EP3353339A1 (en) 2018-08-01
EP3353339A4 true EP3353339A4 (en) 2019-05-08

Family

ID=58387445

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16849805.3A Ceased EP3353339A4 (en) 2015-09-24 2016-09-23 STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER
EP24168962.9A Pending EP4407079A3 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Pending EP4407079A3 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Country Status (4)

Country Link
EP (2) EP3353339A4 (en)
CN (2) CN108463580B (en)
TW (4) TWI885627B (en)
WO (1) WO2017053883A1 (en)

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EP3382068B1 (en) * 2017-03-29 2022-05-18 SiCrystal GmbH Silicon carbide substrate and method of growing sic single crystal boules
EP3382067B1 (en) 2017-03-29 2021-08-18 SiCrystal GmbH Silicon carbide substrate and method of growing sic single crystal boules
CN110921670B (en) * 2018-09-19 2022-01-07 比亚迪股份有限公司 Silicon carbide and preparation method thereof
CN114174570B (en) 2019-03-29 2024-04-30 学校法人关西学院 Apparatus for manufacturing semiconductor substrate having temperature gradient inversion unit and method for manufacturing semiconductor substrate
CN110396717B (en) * 2019-07-12 2020-07-28 山东天岳先进材料科技有限公司 High-quality high-purity semi-insulating silicon carbide single crystal, substrate and preparation method thereof
TWI698397B (en) 2019-11-11 2020-07-11 財團法人工業技術研究院 Method of purifying silicon carbide powder
CN115279956A (en) * 2019-12-27 2022-11-01 沃孚半导体公司 Large diameter silicon carbide wafer
US12006591B2 (en) 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN111270304A (en) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 Method for preparing 4H silicon carbide single crystal
CN113818081A (en) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 Semi-insulating single crystal silicon carbide bulk and powder
TWI771183B (en) * 2020-10-20 2022-07-11 環球晶圓股份有限公司 Polishing method of silicon carbide wafer
CN114388347B (en) * 2020-10-20 2025-08-12 环球晶圆股份有限公司 Polishing method of silicon carbide wafer
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
CN117916850A (en) * 2021-07-09 2024-04-19 帕里杜斯有限公司 SiC P-type and low-resistivity crystals, crystal rods, wafers and equipment and methods for manufacturing the same
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
CN114804113B (en) * 2022-05-26 2024-02-02 哈尔滨晶彩材料科技有限公司 Method for preparing high-purity SiC polycrystalline source powder by hybrid functionality silane non-initiation suspension polymerization
US12434330B1 (en) 2024-04-05 2025-10-07 Wolfspeed, Inc. Laser-based surface processing for semiconductor workpiece
US12438001B1 (en) * 2024-04-05 2025-10-07 Wolfspeed, Inc. Off axis laser-based surface processing operations for semiconductor wafers
US12269123B1 (en) 2024-04-05 2025-04-08 Wolfspeed, Inc. Laser edge shaping for semiconductor wafers
CN118718882B (en) * 2024-08-30 2025-04-04 浙江晶越半导体有限公司 Crucible for producing colorless moissanite and method for producing colorless moissanite
CN119061472A (en) * 2024-11-06 2024-12-03 浙江大学杭州国际科创中心 Cleaning method of graphite parts for silicon carbide epitaxial growth and silicon carbide epitaxial growth device

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GB2301349A (en) * 1995-05-31 1996-12-04 Bridgestone Corp Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal.
US20120192790A1 (en) * 2009-06-22 2012-08-02 Zhizhan Chen Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
WO2012169789A2 (en) * 2011-06-07 2012-12-13 Lg Innotek Co., Ltd. Apparatus for fabricating ingot and method for fabricating ingot
KR20120140157A (en) * 2011-06-20 2012-12-28 엘지이노텍 주식회사 Apparatus for fabricating ingot and method for providing material
US20130161647A1 (en) * 2011-12-26 2013-06-27 Sumitomo Electric Industries, Ltd. Ingot, substrate, and substrate group
WO2016049344A2 (en) * 2014-09-25 2016-03-31 Melior Innovations, Inc. Polysilocarb based silicon carbide materials, applications and devices

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GB2301349A (en) * 1995-05-31 1996-12-04 Bridgestone Corp Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal.
US20120192790A1 (en) * 2009-06-22 2012-08-02 Zhizhan Chen Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
WO2012169789A2 (en) * 2011-06-07 2012-12-13 Lg Innotek Co., Ltd. Apparatus for fabricating ingot and method for fabricating ingot
KR20120140157A (en) * 2011-06-20 2012-12-28 엘지이노텍 주식회사 Apparatus for fabricating ingot and method for providing material
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Title
See also references of WO2017053883A1 *

Also Published As

Publication number Publication date
EP3353339A1 (en) 2018-08-01
CN108463580B (en) 2021-11-12
TW201821656A (en) 2018-06-16
TWI885627B (en) 2025-06-01
CN108463580A (en) 2018-08-28
TWI719164B (en) 2021-02-21
TW202413743A (en) 2024-04-01
TWI770769B (en) 2022-07-11
TW202244337A (en) 2022-11-16
CN114000197A (en) 2022-02-01
CN114000197B (en) 2025-01-10
TW202117101A (en) 2021-05-01
TWI820738B (en) 2023-11-01
EP4407079A3 (en) 2024-10-30
WO2017053883A1 (en) 2017-03-30
EP4407079A2 (en) 2024-07-31

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