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EP3044634B1 - Système d'éclairage - Google Patents

Système d'éclairage Download PDF

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Publication number
EP3044634B1
EP3044634B1 EP14755085.9A EP14755085A EP3044634B1 EP 3044634 B1 EP3044634 B1 EP 3044634B1 EP 14755085 A EP14755085 A EP 14755085A EP 3044634 B1 EP3044634 B1 EP 3044634B1
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EP
European Patent Office
Prior art keywords
collector
radiation source
region
imaging
field
Prior art date
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Application number
EP14755085.9A
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German (de)
English (en)
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EP3044634A1 (fr
Inventor
Markus DEGÜNTHER
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication of EP3044634A1 publication Critical patent/EP3044634A1/fr
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source

Definitions

  • the invention relates to a lighting system with an illumination optics, which leads from a collector collected EUV illumination light to an object field. Furthermore, the invention relates to a projection exposure apparatus with such an illumination system, a method for producing a microstructured or nanostructured component with a projection exposure apparatus and a component produced by the method.
  • a constriction of the entire bundle of EUV illumination light which is advantageous for separating components of a lighting module of the lighting system from components of a downstream lighting module of the lighting system, does not necessarily require that the constriction area also simultaneously be a focal area of the collector, ie an area in which the radiation source area is imaged by the collector.
  • the effect "constricting" on the illumination light beam is separated from the effect "imaging”. This increases the design degrees of freedom for the lighting system, since the location of the first downstream focus area, ie the first image of the radiation source area, can be selected independently of the location of the necking area.
  • a beam path section in which, for example, a component of the illumination optical unit downstream of the constriction region can be arranged. This component is then arranged between the constriction area and the downstream focus area.
  • the collector mirrors may have mirror surfaces designed as free-form surfaces. Free-form surfaces are surfaces that can not be mathematically described by a rotationally symmetric function. Examples of this are the WO 2012/013241 A1 and the references given there.
  • the collector mirrors may be designed and arranged such that a maximum angle of incidence of the illumination light on the collector mirrors is less than 45 °.
  • a geometrically similar edge contour design according to claim 4 leads to an efficient guidance of the illumination light in the illumination system.
  • an edge contour of the collector mirror may also be hexagonal.
  • Ring mirrors according to claim 6 are well adapted to the symmetry of receiving a rotationally symmetric emitting radiation source region.
  • the ring mirrors may be arranged coaxially one inside the other.
  • a spherical optic according to claim 8 increases the detectable by the collector solid angle range around the radiation source.
  • the radiation source image area is not around the downstream focus area because the radiation source image area is not located downstream of the radiation source area in the beam path.
  • a plurality of downstream focus areas according to claim 9 allow a separation of the imaging properties for the illumination light components assigned to these multiple focus areas. Accordingly, this advantageously increases the number of design degrees of freedom of the illumination system.
  • An image with beam-angle matched collector imaging scales according to claim 10 enables a targeted size adjustment of the different focus areas and an adaptation to downstream components of the illumination optical system. An influence of the beam angle on the image scale of the collector can be compensated in this way, for example.
  • a field facet transmission optical system can be designed such that the radiation source area is imaged onto radiation source images of essentially the same size on the pupil facets.
  • the products from the collector magnification and their associated facet magnification can no more than a factor of 2.25, not more than a factor of 2.0, not more than a factor of 1.9, not more as a factor of 1.8, by no more than a factor of 1.7, by no more than a factor of 1.6, or by no more than a factor of 1.5.
  • FIG. 1 schematically shows in a meridional section an EUV projection exposure apparatus 1 for microlithography.
  • An illumination system 2 of the projection exposure apparatus 1 has, in addition to a radiation source or light source 3, an illumination optical system 4 for exposing an object field or illumination field 5 in an object plane 6.
  • a reticle 7 arranged in the object field 5 is exposed here, which is held by a reticle holder 8, which is only partially shown is.
  • a projection optical system 9 is used to image the object field 5 into an image field 10 in an image plane 11.
  • a structure is depicted on the reticle 7 on a photosensitive layer of a wafer 12 arranged in the image plane 11 in the region of the image field 10, which is likewise schematically represented Wafer holder 13 is held.
  • the illumination optics 4 and the projection optics 9 together form an optical system of the projection exposure apparatus 1.
  • the radiation source 3 is an EUV radiation source with an emitted useful radiation in the range between 5 nm and 30 nm. It may be a plasma source, in particular an LPP source (plasma generation by laser, laser-produced plasma) ,
  • the EUV radiation source can also be, for example, a DPP source (plasma discharge by gas discharge, plasma discharge).
  • EUV radiation 14, which emanates from the radiation source 3, is received and concentrated by a collector 15, which in the Fig. 1 is shown very schematically as a block.
  • the collector 15 will be described in more detail below.
  • the EUV radiation 14 is also referred to below as a useful emission, as an illumination light or as an imaging light. After the collector 15 propagates the EUV radiation 14 in the execution Fig.
  • the field facet mirror 17 is arranged in a plane 18 of the illumination optics 4, which is optically conjugate to the object plane 6. In this plane 18 there is an illumination far field 19 of the EUV radiation 14, which is formed by the transfer of the Nutzemission 14 from the collector 15. A complete illumination of the entire field facet mirror 17 can be achieved.
  • the EUV radiation 14 is reflected by a pupil facet mirror 20.
  • the pupil facet mirror 20 is arranged in a pupil plane of the illumination optics 4, which is optically conjugate to a pupil plane of the projection optics 9.
  • imaging optical assembly in the form of another transmission optics 21 in the order of the beam path designated mirrors 22, 23 and 24 field facets of the field facet mirror 17 are shown superimposed on each other in the object field 5.
  • the last mirror 24 of the transmission optics 21 is a grazing incidence mirror.
  • the pupil facet mirror 20 and the transmission optics 21 form a sequential optical system for transferring the illumination light 14 into the object field 5.
  • the transfer optics 21 can be dispensed with in particular if the pupil facet mirror 20 is arranged in an entrance pupil of the projection optics 9.
  • the pupil facet mirror 20 then represents the only transmission optics for superimposing the field facets of the field facet mirror 17 into the illumination field 5.
  • a Cartesian xyz coordinate system as a global coordinate system for the description of the positional relationships of components of the projection exposure system 1 between the object plane 6 and the image plane 11 located.
  • the x-axis runs in the Fig. 1 perpendicular to the drawing plane and this into it.
  • the y-axis runs in the Fig. 1 to the right.
  • the z-axis runs in the Fig. 1 down, so perpendicular to the object plane 6 and the image plane 11.
  • various a local xyz coordinate system is specified along the beam path of the Nutzemission 14 various a local xyz coordinate system is specified.
  • the z-axis of these local coordinate systems in each case indicates the beam direction of the useful emission 14.
  • the x-axis of the local coordinate systems runs regularly parallel to the x-axis of the global coordinate system.
  • the y-axis of the local coordinate system is tilted according to the orientation of the local coordinate system with respect to the y-axis of the global coordinate system.
  • the reticle holder 8 and the wafer holder 13 are both controllably displaced so that in the projection exposure the reticle 7 and the wafer 12 in a displacement direction, namely in the y direction of the global xyz coordinate system, on the one hand by the object field 5 and on the other hand by the image field 10 are scanned.
  • the direction of displacement y is also referred to below as the scanning direction.
  • the EUV collector 15 serves to transfer the useful emission 14 of the EUV radiation source 3 into the EUV far field 19.
  • the field facet mirror 17 is arranged as a further EUV mirror component, which converts the useful emission 14 into the illumination field 5.
  • Fig. 2 shows, in a meridional section, an embodiment of the collector 15.
  • a local Cartesian xyz coordinate system is drawn.
  • the x-axis of the coordinate system after Fig. 2 runs parallel to the x-axis of the global coordinate system Fig. 1 and perpendicular to the plane of the Fig. 2 out of this.
  • the y-axis runs in the Fig. 2 up.
  • the z-axis runs in the Fig. 2 to the left and runs parallel to a main beam direction of a beam path of the illumination light 14 after the collector 15.
  • the z-axis extends on a connecting line between the light source 3, for example, a radiating plasma volume, the Also referred to as radiation source area, and an intermediate focus 25 (see. Fig. 1 ).
  • This connecting line between the radiation source region 3 and the downstream focus region 25 simultaneously represents an optical axis oA of the collector 15.
  • the intermediate focus 25 represents a downstream focus region. In this downstream focus region 25, the collector 15 forms the radiation source region 3 with the aid of collector imaging optics 26 from.
  • the collector 15 is designed rotationally symmetrical about the z-axis.
  • the collector imaging optics 26 has a plurality of separately arranged collector imaging mirrors 27 n , of which in the Fig. 2 the three innermost collector imaging mirrors 27 1 , 27 2 and 27 3 are shown in meridional section in the half-space of positive y values. Apart from the innermost collector imaging mirror 27 1 , all other collector imaging mirrors 27 n are designed as annular mirrors. The annular mirror 27 n are arranged coaxially with each other. The z-axis next adjacent, innermost collector imaging mirror 27 1 is designed as Ellipsoidschale. This can, where it is pierced by the z-axis, have a passage opening for a laser beam for igniting the plasma in the radiation source region 3, which in the Fig. 2 not shown.
  • the further collector imaging mirrors 27 2 to 27 n each have in turn ellipsoidal mirror surfaces, which in the half-space of positive y-values in the Fig. 2 for the collector imaging mirrors 27 2 , 27 3 and 27 n are indicated by dashed lines.
  • the subdivision into the collector imaging mirrors 27 n is in the Fig. 2 indicated by a serrated, solid line whose line segments each run straight and does not coincide with the dashed mirror surfaces.
  • the collector imaging mirror 27 1 receives EUV illumination light 14 emitted from the radiation source region 3 with beam angles ⁇ 1 smaller than 55 °.
  • the collector imaging mirror 27 2 that is to say the second ellipsoidal shell of the collector 15 and simultaneously the first annular mirror, receives the illumination light 14 emitted by the radiation source region 3 in a beam angle range ⁇ 2 between 55 ° and approximately 73 °.
  • the next collector imaging mirror 27 3 receives the illumination light 14 emitted by the radiation source region 3 in a beam angle range ⁇ 3 between approximately 73 ° and 90 °.
  • the following collector imaging mirrors 27 4 to 27 n receive the illumination light 14 emitted by the radiation source region 3 with associated beam angle ranges ⁇ n covering the beam angle range between 90 ° and approximately 145 °.
  • the collector imaging mirrors 27 1 to 27 n are thus designed such that they respectively detect components of the EUV illumination light 14 from the radiation source region 3, which emits in an angular range of beam angles ⁇ n to the optical axis oA between the radiation source region 3 and the downstream focus region 25 are.
  • the innermost collector imaging mirror 27 1 images in particular EUV illumination light 14, which is emitted by the radiation source region 3 with beam angles ⁇ 20 ° to the optical axis between the radiation source region 3 and the downstream focus region 25.
  • This imaging through the innermost collector imaging mirror 27 1 takes place with a first magnification ⁇ 1 .
  • the imaging scale ⁇ is a surface imaging scale.
  • the magnification ⁇ thus indicates the ratio by which the area to be imaged is reduced or enlarged.
  • the collector imaging mirror 27 2 images the incident illumination light 14 in the beam angle range ⁇ 2 with a second magnification ⁇ 1 .
  • the illumination light which is imaged by the second collector imaging mirror 27 2 includes illumination light 14 which is emitted by the radiation source region 3 with beam angles> 70 °, namely in the beam angle range between 70 ° and 73 °, to the optical axis oA.
  • the imaging scale variation for the different beam angles which is reduced by the imaging scales adapted to the beam angles ⁇ , thus results in a correspondingly reduced variation of the sizes of the different radiation source images in the intermediate focus area 25 (cf. Fig. 1 ) for the illumination light components which are emitted from the radiation source region 3 with different beam angles ⁇ 1 .
  • magnification ⁇ 3 for the third collector imaging mirror 27 3 is also adapted to the beam angles ⁇ 3 of the illumination light 14, so that in comparison to the magnifications ⁇ 1,20 and ⁇ 2,70 there is again only a small magnification difference.
  • the magnification ⁇ n of each collector imaging mirror 27 n varies between a minimum magnification ⁇ n, min and a maximum magnification ⁇ n, max , depending on the respective beam angle ⁇ n of the illumination light 14 on the collector imaging mirror 27 n .
  • ⁇ n, max / ⁇ n, min between these imaging scales on one and the same collector imaging mirror 27 n ⁇ n, max / ⁇ n, min ⁇ 2.
  • this ratio can also be ⁇ 1.9, can be ⁇ 1.8, can be ⁇ 1.7, and can be, for example, 1.67.
  • ⁇ n / ⁇ 0 is a total standard reproduction scale for the collector 15.
  • Fig. 3 shows a further embodiment of a collector 28, which instead of the collector 15 after the Fig. 1 and 2 can be used.
  • the collector 28 has three inner collector imaging mirrors 27 1 , 27 2 and 27 3 , which are designed according to what was mentioned above in connection with the Fig. 2 has already been explained.
  • a beam angle range ⁇ up to a maximum beam angle ⁇ 3, max of 90 ° is detected via the three collector imaging mirrors 27 1 to 27 3 , ie the same beam angle range as through the annular mirrors 27 1 to 27 3 of the collector 15 Fig. 2 ,
  • the collector 28 has a spherical optic 29, which images the radiation source region 3 substantially in itself into a radiation source image region 3 'which lies in the region of the radiation source region 3, ie either coincides with it or is closely adjacent thereto .
  • This spherical optic 29 is also designed as an annular mirror in the collector 28 and covers a range of beam angles ⁇ , with which the illumination light is emitted from the radiation source region 3, between 90 ° and about 140 °.
  • the illuminating light 14 is substantially reflected back in itself and then becomes the radiation source image area 3 'imaged through the collector imaging mirrors 27 1 to 27 3 in the intermediate focus area 25, as described above in connection with Fig. 2 already explained.
  • Fig. 4 shows by way of example an xy cross-section of a portion of a bundle of the illumination light 14 in the septfokusebene 16, that is, a cross section through the respective portion of the intermediate focus area 25th
  • Fig. 4a shows here the proportion of the bundle of illumination light 14, which is reflected with small beam angles, for example with beam angles ⁇ ⁇ 10 °, from the collector imaging mirror 27 1 .
  • a diameter of the associated portion of the illumination light 14 in the intermediate focus area 25 is 4.0 in arbitrary units. This diameter is also referred to as D 0 .
  • Fig. 4b shows the corresponding diameter for the proportion of the bundle of illumination light 14, which is imaged with beam angles ⁇ in the range of 90 ° from the collector imaging mirror 27 3 in the intermediate focus region 25.
  • the diameter for this illuminating light portion is 3.2. This diameter is also referred to as D 90 .
  • Fig. 5 shows a further embodiment of a lighting system 30, which instead of the illumination system 2 in the projection exposure apparatus 1 according to Fig. 1 be used.
  • the lighting system 30 has a collector 31.
  • Fig. 5 In the schematic representation after Fig. 5 are two field facets 32 1 , 32 2 of the field facet mirror 17 shown, which in turn are composed of a plurality of individual mirrors 33, of which in the Fig. 5 three individual mirrors 33 are shown for each field facet 32. In practice, the number of individual mirrors 33 per field facet 32 may be significantly higher.
  • the number of field facets 32 is much higher in practice. For example, there may be a few hundred field facets 32 at the field facet mirror 17.
  • two pupil facets 34 1 and 34 2 of the pupil facet mirror 20 are shown schematically, which are assigned to the field facets 32 1 and 32 2 via illumination channels 35 1 and 35 2 .
  • a downstream focus area 25, the function of the focus area 25 after Fig. 1 corresponds to the first image of the radiation source region 3 of collector imaging mirrors 36 1 , 36 2 of the collector 31 in the beam path of the illumination light 14 after the radiation source region 3.
  • This downstream focus region 25 is in the illumination system 30 in the region of the pupil facet mirror 20th
  • the pupil facets 34 belong to a pupil facet transmission optics which map the field facets 32 over one another into the object field 5, as in FIG Fig. 5 is shown schematically.
  • constriction area 37 Between the collector 31 and a first component of the illumination optics 4 of the illumination system 30, ie the field facet mirror 17, there is a constriction area 37.
  • a cross section of an entire bundle of the EUV illumination light 14 in the region of the cross section on the field facet mirror 17 is at least one Factor 2 decreases, which is shown in the schematic representation of Fig. 5 , in which only two field facets 32 are shown, is not reproduced true to scale.
  • the constriction region 37 does not constitute a focal region of the collector imaging optics of the collector 31.
  • the focal region 25 is subsequently arranged in the beam path of the illumination light 14, namely in the region of the pupil facet mirror 20. Between the constriction area 37 and the focus area 25, the field facet mirror 17 is arranged in the beam path of the illumination light 14.
  • the collector imaging mirrors 36 n of the collector 31 are formed as free-form surfaces.
  • Mirror surfaces 38 of the collector imaging mirrors 36 n are designed such that a maximum angle of incidence ⁇ max of the illumination light 14 on the collector imaging mirrors 36 n is less than 45 °.
  • An edge contour of the collector imaging mirror 36 n is designed to be similar to an edge contour of the field facets 32 n .
  • the collector imaging mirrors 36 n have a rectangular edge contour.
  • a curved and, for example, part-annular edge contour of the collector imaging mirrors 36 n is possible.
  • Fig. 6 shows in a schematic representation of another embodiment of a collector 39, which can be used in particular instead of the collector 31.
  • the collector 39 has a total of 81 collector imaging mirrors 36 n , which are arranged grid-like densely packed rows and columns in the manner of a 9x9 matrix. Shown in the Fig. 6 in the beam path after the constriction region 37, an arrangement plane 40 for a field facet mirror in the manner of the field facet mirror 17. The field facet mirror itself and also its reflective effect on the illumination light 14 are in the Fig. 6 not shown. Shown in the Fig. 6 in the further course of the exemplified for some collector imaging mirror 36 n beam path of the illumination light 14 after the arrangement level 40, the imaging effect of the collector imaging mirror 36 n , so that in a perspective in the Fig.
  • FIG. 6 arises n shown another arrangement plane 41 in which a pupil facet mirror in the manner of the pupil facet mirror are arranged 20, a 9x9 grid of radiation source images 42, as the first images of the radiation source region 3 in the optical path and the light path of the illumination light 14 after the radiation source region 3 of the collector Imaging mirrors 36 n are generated.
  • a pupil facet of the pupil facet mirror 20 is arranged.
  • the arrangement plane 41 of the radiation source images 42 n represents the intermediate focus region 25 of the collector 39.
  • Fig. 6 clearly shows that this first, the radiation source region 3 downstream insects Society 41 is spatially separated from the constriction region 37th
  • Fig. 7 shows far-field variants of the illumination light 14, which are generated on the one hand by the collector 39 and on the other hand by a correspondingly constructed, alternative collector arranged in the manner of a 19x19 matrix collector imaging mirrors. Hatched, different intensity values I are indicated according to the scale indicated on the right.
  • the far fields after the Fig. 7a, 7b are where the partial beams of the illumination light 14 guided via the individual collector imaging mirrors 36 n have just completely raced apart again after the constriction region 37. In this far field no far field point sees light from more than one collector imaging mirror 36n .
  • An arrangement of a field facet mirror in the arrangement plane 40 thus results in no field facet being exposed to illumination light 14 that is reflected by more than one collector imaging mirror 36 n .
  • a cross section of the constriction region 37 can be achieved, for example, with an absolute size of 20 mm ⁇ 20 mm or even 40 mm ⁇ 40 mm.
  • Fig. 8 shows a further embodiment of a lighting system 44, which in turn can be used instead of the illumination system 2 in the projection exposure apparatus 1.
  • a lighting system 44 which in turn can be used instead of the illumination system 2 in the projection exposure apparatus 1.
  • a collector 45 of the illumination system 44 has collector imaging mirrors 46 n , of which in the Fig. 8 a total of five collector imaging mirror, namely an innermost collector imaging mirror 46 1 , two of these adjacent average collector imaging mirror 46 2 , 46 2 ' and turn these adjacent, outer collector imaging mirror 46 3 , 46 3' are shown.
  • the innermost collector imaging mirror 46 1 images portions of the illumination light 14 which are emitted at beam angles to the optical axis oA from the radiation source region 3, which are smaller than 20 °.
  • the beam angles, which in turn are imaged by the outermost collector imaging mirrors 46 3 , 46 3 ' are greater than 70 °.
  • the intermediate central collector imaging mirrors 46 2 , 46 2 ' form intermediate beam angles of the illumination light 14.
  • An imaging effect of the innermost collector imaging mirror 46 1 is such that an intermediate focus 47 1 , which is generated as an image of the radiation source region 3 from the collector imaging mirror 46 1 , is arranged at a distance F 1 from the radiation source region 3.
  • the intermediate focus 47 1 lies on the optical axis oA.
  • the Eisenfoci 47 1 , 47 2 , 47 2 ' , 47 3 , 47 3' are each spatially separated.
  • the constriction region 37 is spatially spaced at least from some of the intermediate foci 47, namely from the intermediate foci 47 1 , 47 2 and 47 2 ' .
  • the constriction region 37 thus does not coincide in the focus region 25, even in this embodiment.
  • the intermediate foci 47 are imaged on the pupil facets of the pupil facet mirror 20 by the field facets 48 n assigned to them with different facet imaging scales ⁇ F such that images of the intermediate foci 47 on the pupil facets are essentially the same size and, for example, less than 30% in cross-section, differ by less than 20%, by less than 15%, by less than 10% or even by less than 5%.
  • a first focus area namely the intermediate focus 47 1
  • a second focus area for example the intermediate foci 47 2 , 47 2 '
  • the entire focus area 25 is in the execution after Fig. 8 formed by the various spatially separated insects 46 n .
  • Fig. 9 shows a mapping between the collector imaging mirrors 46 n and the field facet 48 n.
  • the index n of the mapping F n is for the collector imaging mirrors 46 and field facets 48 in FIG Fig. 9 each represented as a large number. Due to the inverting effect on the insects 46 n these indices are on the field facet mirror 17 shown upside down.
  • the collector imaging mirrors 46 n may be square, rectangular, hexagonal or, as in the Fig. 10 shown, also be shaped arcuately with respect to their edge contour.
  • the collector imaging mirror 46 n can be formed as a single sheet, which is not shown in detail, or for applying two adjacent arcuate field facets 48 n , as double sheets, as in the FIG. 10 shown. With a collector-imaging mirror 46 n more than one field facet can be applied to 48 n with the illumination light 14, for example a group of field facets 48 n.
  • the group can simultaneously be located in a plurality of columns and / or in a plurality of rows of this field facet arrangement by a collector imaging mirror 46 n field facets 48 n applied to the illumination light 14.
  • a collector imaging mirror 46 n field facets 48 n applied to the illumination light 14.
  • the number of collector imaging mirrors 46n may range between five and twenty-five.
  • Fig. 11 For example, one possible mapping F n between collector imaging mirrors 46 n and field facets 48 n in a 3 ⁇ 3 matrix arrangement shows both the collector imaging mirrors 46 n and the field facets 48 n .
  • the view after Fig. 11 takes place with a view long the optical axis oA.
  • the collector imaging mirrors 46 n are indicated as larger squares and the field facets 48 n as smaller squares. Similar in the Fig. 9 are also in the Fig. 11 the indices of the collector imaging mirrors 46 n are represented as large numbers and the indices of the field facets 48 n as smaller and upside-down numbers.
  • An assignment of the respective collector-imaging mirror 46 is n to the respective field facet 48 n 35 n indicated via a corresponding illumination light illumination channel by the same indices. Shown on the illumination channels between the respective collector imaging mirror 46 n and the associated Feldfacette 48 n and the location of the respective intermediate focus 47 n .
  • a product of the collector training scale ⁇ K of the collector imaging mirror 46 1 and the facet magnification ⁇ F of the associated field facet differs from a product of the collector imaging scales ⁇ K of the further collector imaging mirrors 46 n and the associated facet imaging scales ⁇ F of the field facets for all light paths of the illumination light 14 towards the pupil facets of the pupil facet mirror 20 by no more than a factor of 2.5.
  • This difference for the scale-up products from the collector magnification and the associated facet magnification can be at most 2.25, at most 2.0, at most 1.9, at most 1.8, at most 1.7, at most 1.6 or even highest 1.5, depending on the design of the illumination system 45.
  • the field facets of the field facet mirror 17 after Fig. 8 belong to a field facet transmission optics, each of which images one of the focus area 47 n onto one of the pupil facets of the pupil facet mirror 20.
  • the reticle 7 and the wafer 12 are first provided with a coating that is photosensitive to the illumination light 14. It is then at least a portion of the reticle 7 on the wafer 12 by means of the projection exposure system 1 projected. Subsequently, the photosensitive layer exposed to the illumination light 14 is developed on the wafer 12. Entrained foreign particles emitted by components of the radiation source can be suppressed in the constriction area.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)

Claims (13)

  1. Système d'éclairage (30 ; 44)
    - avec une optique d'éclairage (4) qui conduit de la lumière d'éclairage EUV (14) collectée par un collecteur (31 ; 45) vers un champ d'objet (5),
    - dans lequel le collecteur (31 ; 45) sert au transfert de la lumière d'éclairage EUV (14) à partir d'une zone de source de rayonnement (3) jusqu'à l'optique d'éclairage (4),
    - dans lequel l'optique d'éclairage (4) présente :
    -- un miroir à facettes de champ (17) avec une pluralité de facettes de champ (32),
    -- un miroir à facettes de pupille (20) avec une pluralité de facettes de pupille (34), lesquelles font partie d'une optique de transmission à facettes de pupille qui assure la projection des facettes de champ (32) de manière superposée les unes sur les autres dans le champ d'objet (5),
    - dans lequel le collecteur (31 ; 45) présente une optique de projection de collecteur (36) qui projette la zone de source de rayonnement (3) dans une zone de foyer (25) située en aval,
    - dans lequel, dans la zone de foyer (25) située en aval, la première projection de la zone de source de rayonnement (3) de l'optique de projection de collecteur a lieu dans la trajectoire des rayons après la zone de source de rayonnement (3),
    caractérisé en ce que,
    entre le collecteur (31 ; 45) et un premier composant (17) de l'optique d'éclairage (4), se trouve une zone de rétrécissement (37) ne coïncidant pas avec la zone de foyer (25) située en aval, dans laquelle zone de rétrécissement une section transversale d'un faisceau global de la lumière d'éclairage EUV (14) est réduite d'au moins un facteur de 2 en comparaison avec la section transversale sur le miroir à facettes de champ (17).
  2. Système d'éclairage selon la revendication 1, caractérisé en ce que la zone de foyer (25) située en aval se trouve dans la zone du miroir à facettes de pupille (20).
  3. Système d'éclairage selon la revendication 1 ou 2, caractérisé en ce que l'optique de projection de collecteur présente une pluralité de miroirs de collecteur (36n ; 46n) disposés séparément les uns par rapport aux autres.
  4. Système d'éclairage selon la revendication 3, caractérisé en ce qu'au moins certaines surfaces de miroir (38) des miroirs de collecteur (36n ; 46n) ont un contour de bord qui est géométriquement semblable à un contour de bord de facettes de champ (32), ou de groupes de facettes de champ, du miroir à facettes de champ (17).
  5. Système d'éclairage selon la revendication 3 ou 4, caractérisé en ce que les miroirs de collecteur (36n ; 46n) ont un contour de bord rectangulaire.
  6. Système d'éclairage selon l'une des revendications 3 à 5, caractérisé en ce qu'au moins certains des miroirs de collecteur sont réalisés en tant que miroirs annulaires.
  7. Système d'éclairage selon l'une des revendications 3 à 6, caractérisé en ce que les surfaces de miroir d'au moins certains des miroirs de projection de collecteur (36n ; 46n) sont de forme ellipsoïdale.
  8. Système d'éclairage selon l'une des revendications 1 à 7, caractérisé en ce que le collecteur présente une optique sphérique qui projette la zone de source de rayonnement (3) dans une zone d'image de source de rayonnement (3') qui se trouve dans la zone de la zone de source de rayonnement (3).
  9. Système d'éclairage selon l'une des revendications 1 ainsi que 3 à 8, dans lequel l'optique de projection de collecteur projette la zone de source de rayonnement (3) dans une pluralité de zones de foyer (47n) situées en aval, et dans lequel les facettes de champ (32n) font partie d'une optique de transmission de facettes de champ qui projette respectivement l'une des zones de foyer (47n) sur l'une des facettes de pupille (34n)
  10. Système d'éclairage selon la revendication 9, caractérisé en ce que l'optique de projection de collecteur est réalisée de telle sorte que,
    - avec la lumière d'éclairage EUV (14), laquelle est émise par la zone de source de rayonnement (3) avec des angles de rayonnement (α) < 20° par rapport à un axe optique (oA) entre la zone de source de rayonnement (3) et une première zone de foyer (471) située en aval, la source de rayonnement (3) est projetée dans la première zone de foyer (471) située en aval avec une première amplification latérale de collecteur (βK1),
    - avec la lumière d'éclairage EUV (14), laquelle est émise par la zone de source de rayonnement (3) avec des angles de rayonnement (α) > 70° par rapport à l'axe optique (oA) entre la zone de source de rayonnement (3) et la première zone de foyer (471) située en aval, la source de rayonnement (3) est projetée dans des deuxièmes zones de foyer (473, 473') situées en aval, lesquelles sont situées de façon séparée spatialement de la première zone de foyer (471), avec une deuxième amplification latérale de collecteur (βK2).
  11. Système d'éclairage selon la revendication 10, caractérisé en ce que l'optique de transmission de facettes de champ est réalisée d'une manière telle,
    - que la première zone de foyer (471) est projetée avec une première amplification latérale de facettes (βF1),
    - que les deuxièmes zones de foyer (473, 47') sont projetées avec une deuxième amplification latérale de facettes (βF2),
    - dans lequel le produit (βK1 x βF1) de la première amplification latérale de collecteur (βK2) par la première amplification latérale de facettes (βF1) diffère de l'ordre d'un facteur non supérieur à 2,5 du produit (βK1 x βF1) de la deuxième amplification latérale de collecteur (βK2) par la deuxième amplification latérale de facettes (βF2) pour tous les trajets de lumière (35n) de la lumière d'éclairage (14) jusqu'aux facettes de pupille (34n).
  12. Installation d'exposition par projection (1) avec un système d'éclairage (2 ; 30 ; 44) selon l'une des revendications 1 à 11 et avec une source de rayonnement EUV (3).
  13. Procédé pour la fabrication d'un composant à nano et/ou micro-structuration avec les étapes suivantes du procécé :
    - la mise à disposition d'un réticule (7),
    - la mise à disposition d'une tranche (12) avec un revêtement sensible à la lumière pour le faisceau de lumière d'éclairage (14),
    - la projection d'au moins une partie du réticule sur la tranche (12) à l'aide de l'installation d'exposition par projection selon la revendication 12,
    - le développement de la couche sensible à la lumière, exposée avec le faisceau de lumière d'éclairage (14), sur la tranche (12).
EP14755085.9A 2013-09-11 2014-08-25 Système d'éclairage Active EP3044634B1 (fr)

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DE102013218128.0A DE102013218128A1 (de) 2013-09-11 2013-09-11 Beleuchtungssystem
PCT/EP2014/067962 WO2015036227A1 (fr) 2013-09-11 2014-08-25 Système d'éclairage

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KR102344280B1 (ko) 2021-12-28
US9810992B2 (en) 2017-11-07
EP3044634A1 (fr) 2016-07-20
KR20160054580A (ko) 2016-05-16
US20160187785A1 (en) 2016-06-30
WO2015036227A1 (fr) 2015-03-19
JP2016535314A (ja) 2016-11-10
JP6718818B2 (ja) 2020-07-08

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