EP2901473A1 - Assembly method, of the flip-chip type, for connecting two electronic components, assembly obtained by the method - Google Patents
Assembly method, of the flip-chip type, for connecting two electronic components, assembly obtained by the methodInfo
- Publication number
- EP2901473A1 EP2901473A1 EP13805536.3A EP13805536A EP2901473A1 EP 2901473 A1 EP2901473 A1 EP 2901473A1 EP 13805536 A EP13805536 A EP 13805536A EP 2901473 A1 EP2901473 A1 EP 2901473A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- assembly
- tracks
- inserts
- assembly method
- components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000003780 insertion Methods 0.000 claims description 73
- 230000037431 insertion Effects 0.000 claims description 73
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- -1 AgCu Inorganic materials 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910016570 AlCu Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910007637 SnAg Inorganic materials 0.000 claims description 3
- 229910008433 SnCU Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000011651 chromium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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Definitions
- the present invention relates to a method of assembling two electronic components together, of the type with vertical connections, more commonly called “flip-chip” process in English or “flipped chip”, according to which one of the two electronic components is returned to make electrical connections or assemblies vertically.
- the invention makes it possible to obtain an assembly between electronic components irrespective of their interconnection pitch and the spacing between these components.
- the invention more particularly relates to the assembly between a chip and a substrate, for example both made of silicon.
- the invention aims to reduce the force required to achieve the assembly between electronic components.
- the invention has wide applications in all microelectronic devices requiring vertical interconnections (in English "front to front") at very small steps.
- a particularly interesting application of the invention is the production of stacked 3D three-dimensional structures or multi-spectral heterogeneous imagers.
- an assembly of two electronic components is meant in the context of the invention as well an assembly of two components of different materials than a two-component assembly made of the same material.
- an assembly according to the invention may relate to an assembly between an electronic chip and a substrate, both of which may be made of silicon.
- no interconnection is meant the distance between two connection tracks on the same electronic component.
- spacing between components is meant the spacing between the two facing components defined by the interconnection height.
- the so-called “Flip-Chip” technique is a well known technique for achieving mechanical and electrical interconnection, or assembly between two components, such as between a chip and a printed circuit substrate.
- This technique is called “Flip-Chip” because one of the components, usually the chip, which carries conductors, is returned to put the two components face-to-face to allow the operations of interconnections by bonding between the conductors and metal protuberances, known under the naming in English "bumps" and forming contacts made on the other component, generally a printed circuit substrate.
- FIGS. 1, 2 and 3 show an assembly between two electronic components according to the above-mentioned application WO 2009/115686.
- An open and hollow insert 10 in the form of a blind tube of cylindrical section is secured by its base on the surface of a substrate 11 of a first electronic component.
- a ball 20, typically a solder ball, is secured to the surface of a substrate 21 of a second electronic component 2.
- the material of the ball 20 is of lower hardness than that of the insert 10.
- the publication [3] has moreover explained that the insertion force of a tube is directly proportional to the insertion surface Si of the tube in the stud and therefore to its wall thickness and to the length L of its perimeter.
- the insertion surface Si of an insert in the form of a microtube with a cylindrical section of radius R and a wall thickness e1 is equal to the area of the section of the microtube 10.
- ie Si 2 * 7i * R * el.
- the insertion force is, in first order approximation, inversely proportional to both the Young's modulus. the constituent metal of the connection pad and its yield strength at room temperature.
- Young's modulus the constituent metal of the connection pad and its yield strength at room temperature.
- those with the lowest Young's modulus are those with melting points closest to ambient temperature.
- Table 1 The list of ductile metals with low Young's modulus and low melting temperature is shown in Table 1 below. TABLE 1
- thermocompression insertion assemblies take place between an electronic chip and a wafer, or between one chip and another chip, to make connections with materials that must not pass to the liquid state during the encapsulation steps ("packaging" in English) subsequent to the insertion.
- These packaging steps are up to temperatures of 230 ° C. This temperature of 230 ° C is the temperature at which the electronic components are soldered to an AgCuSn solder circuit board.
- Zinc (Zn) may be suitable but it remains less advantageous than aluminum (Al), the latter having a high Young's modulus.
- the inventor has therefore been confronted with the problem of reducing the insertion forces in a given ductile material, more particularly in aluminum.
- the general object of the invention is to propose an improvement of assembly method according to the aforementioned patent applications WO2009 / 115686 and EP2287904 and which overcomes at least some of the disadvantages of the state of the art mentioned above.
- a particular object of the invention is to propose a solution for reducing the insertion force to be applied to achieve the assembly between two microelectronic components according to a method of thermocompression at low temperature and to avoid any risk of electrical short circuit between the conductive inserts of one component and the connection tracks of the other component.
- the object of the invention is a flip-chip assembly method of two electronic components to one another, said components each comprising a so-called assembly face, according to which the two are brought closer together.
- assembly faces one of the other in a said assembly direction X and applies a given force F to one and / or the other of the components, one and / or the other face ( s) assembly comprising:
- the inserts are aligned opposite the corresponding tracks so that the inserts and the tracks form two by two, after assembly, at least one substantially transverse intersection,
- connection inserts of a component have a unit wall thickness (s) el and a unitary length of wall (s) L1 while the connection tracks of a component have a thickness unitary e2, the unit thicknesses e1, e2 being the smallest dimensions considered transversely to the assembly direction X, the length L 1 being the largest dimension of wall (s) transverse to the assembly direction X,
- the insertion surface Si is at least 40% less than the cross section SI.
- An insert according to the invention may comprise one or more walls. Also by
- Unit length of wall (s) L1 means the perimeter delimited by the wall or walls.
- the unit length is the sum of all the lengths of the branches of the star, which constitutes the perimeter.
- connection track according to the invention consists of a continuous metal deposit in all possible forms.
- a single insert can be inserted in several parts of the same track, and therefore the insertion surface Si to consider according to the invention comprises all the intersections between a thickness of a track and an insert.
- the invention essentially consists in very significantly reducing the cross section of the ductile material of a component that each insert of the other component penetrates during connection assembly.
- the invention is simple to implement, since it is only necessary to make tracks of very thin ductile material without there being any need to modify either the shape or the dimensions or the hard material constituting the inserts or their method of production. known from the aforementioned patent applications WO2009 / 115686 and EP2287904.
- the insertion forces to be applied to make the connections can be considerably reduced.
- the unit thickness of walls and inserts may be between 0.1 and 1 ⁇ , preferably between 0.1 and 0.5 ⁇ .
- the unit thickness of the tracks e2 may be between 0.05 and 2 ⁇ , preferably between 0.1 and 1 ⁇ .
- the constituent material of the tracks is preferably a ductile metallic material chosen from aluminum Al, indium In, Au gold, tin Sn, lead, Pb, bismuth, antimony Sb, zinc Zn, aluminum-copper alloy AlCu, alloys of SnAgCu, SnAg, AgCu, SnCu.
- Tracks made of ductile metallic material may advantageously be made by photolithography, of the additive or subtractive type, or by electrolysis of the metal or alloy.
- the material constituting the tracks may be a hard metal material selected from Cu copper, Ti titanium, Ti titanium nitride, W tungsten, WN tungsten nitride, Mo molybdenum, or Au, chromium Cr, nickel Ni, platinum Pt.
- the connection tracks of hard metal material can be made by photolithography, additive or subtractive type.
- Au, Cu or Ni tracks can be made by electrolytic growth.
- the tracks made of hard metal material are advantageously made according to the same technique as the inserts.
- the inserts according to the invention are preferably blind micro-tubes whose base is secured to one of the components.
- the inserts and, where appropriate, the connecting tracks are thus advantageously manufactured as described in the patent application WO2009 / 115686 or in the application EP 2287904.
- the connecting tracks may have a very large thickness e2, advantageously of the order of 0.1 ⁇ or 0.05 ⁇ , which allows to reduce even more significantly the forces required for the insertion of the inserts within them.
- the conductive inserts according to the invention may have any shape: micro-tube, tip, open bar, element cross-section star, cross, with lobes ....
- connection track parts to be penetrated by a is in the form of at least three branches symmetrically distributed around a point of symmetry, preferably at the number of four branches distributed at 90 from one another.
- the force F applied per insert can be very small, preferably less than 5mN, preferably less than 0.8mN, typically equal to 0.5mN.
- the alignment and the application of the force F are carried out at ambient temperature.
- the spacing between the two components corresponding to the height H is preferably between a ratio p / 20 and a ratio equal to p / 2, p being the interconnection step between two connection tracks of a component.
- the interconnection pitch p between two connection tracks of a component may be less than or equal to 50 ⁇ .
- the spacing between the two components corresponding to the height H is advantageously less than 20 ⁇ , typically equal to 1 ⁇ .
- one of the components is a chip and the other component is a printed circuit substrate.
- FIG. 1 is a schematic sectional view of two electronic components at an insert and a connection pad according to the prior art, before assembly;
- FIG. 2 is a schematic sectional view of two electronic components at an insert and a connection pad according to the prior art, once assembled;
- FIG. 3 is a view from above of FIG. 2;
- - Figure 4 is a schematic top view of two electronic components at an insert and a connecting track according to an example of the invention, once assembled
- - Figure 5 is a schematic top view of two electronic components at an insert and a connecting track according to another example of the invention, once assembled
- FIGS. 6 and 6A are views respectively from above and in section of two electronic components at an insert and a connection track, showing in detail their assembly;
- FIG. 7 to 10 are schematic top views of two electronic components at an insert and a connecting track according to four other examples of the invention, once assembled.
- connection tracks are represented solely for the sake of clarity and that they are not to scale.
- FIGS. 4 to 10 show a connection insert 10 inserted in a connection track 20 each belonging to one of two electronic components 1, 2, such as microchips hybridized by means of a press tool. support on the upper component.
- the component 1, which is the one returned, comprises a substrate 11 on which are secured by their base conductive inserts 10 in the form of a blind tube, the inserts all having a height h.
- the choice of heights h inserts advantageously takes into account the minimum pitch p between interconnections to perform.
- the minimum height h is of the order of p / 20 in order to allow non-flatness to be accepted between the components 1, 2 to be assembled.
- the maximum height h is of the order of p / 2 in order to limit the so-called buckling effects that can occur beyond.
- Each insert 10 has a wall length L1 and a unit wall thickness el.
- the unit thickness is here referred to as the average dimension, or average width, of the wall of the insert in one direction. transverse to the longitudinal direction thereof. The directions of thickness, length and height locally forming an orthogonal reference.
- the unit thickness el of a tube 10 is for example equal to 0.2 ⁇ .
- Each insert tube 10 may have any shape in cross section as shown diagrammatically in FIG. 4. It may be a square section tube (FIG. 5), with a circular section (FIGS. 7 to 10).
- the component 2 comprises meanwhile a substrate 21 on which connection tracks 20 of the same height H have been made.
- the choice of heights H of the tracks 20 advantageously takes account of the minimum pitch p between interconnections to be made.
- the minimum height H is of the order of p / 20 in order to make it possible to accept non-flatness between the chips to be assembled and the maximum height H is equal to p / 2 in order to allow the complete insertion of a tube 10 of maximum height h.
- the height H of the tracks 20 is calculated so that it is greater than that of the inserts 10 in order to prevent the hard metal of the inserts 10 from abutting on the circuit (s) below the track (s) 20. insertion.
- Each track 20 has a unit thickness e2.
- the unit thickness e2 is for example equal to ⁇ .
- the unit thickness e2 is the average dimension, or average width, of the wall of the track in a direction transverse to the longitudinal direction thereof.
- Tracks 20 are in the form of linear and vertical patterns. Each track 20 may be in the form of a single elongate strip (FIGS. 4 and 9), of a tube for example of rectangular or square section (FIG. 10), of a cross (FIGS. 5, 7 and 8) with the branches joined by a via.
- the constituent material of the tracks 20 is a ductile metal material selected from Al aluminum, indium In, Au gold, Sn tin, lead, Pb, bismuth, antimony Sb, AlCu aluminum-copper alloy, SnAgCu, SnAg, AgCu, SnCu alloys.
- the ductile metal material tracks may be made by photolithography, additive or subtractive type, or by electrolysis of the metal or alloy.
- the material constituting the tracks is a hard metal material selected from copper Cu, titanium Ti, titanium nitride TiN, tungsten W, tungsten nitride WN, molybdenum Mo, gold Au, Cr chromium, nickel Ni, platinum Pt.
- Connection tracks of hard metal material can be made by photolithography, additive or subtractive type.
- Au, Cu or Ni tracks can be made by electrolytic growth.
- the insertion section between a track and an insert is minimized while maintaining it sufficient to obtain the mechanical rigidity of the desired interconnection contact.
- tracks can be made according to several possible configurations and therefore have a greater or lesser number of unit wall thicknesses e2 intersected by the same insert 10.
- the same insert 10 can be inserted into a only thickness e2 (FIGS. 4 and 9), in two thicknesses e2 (FIG. 10), four thicknesses e2 (FIGS. 5 and 8), eight thicknesses e2 (FIG. 7) ...
- Step 1 the two components 1, 2 are approached and aligned so as to have each insert 10 facing a part of a connection 20.
- Step 2 a force F is applied in the orthogonal assembly direction X to the faces of the substrates supporting the inserts 10 and tracks 20.
- the force F is applied to a press tool resting on the upper component 1, which causes the insertion of the inserts 10 in the tracks 20.
- N n * el * e2.
- the section Si is very small compared to the force applied, the stress generated is very high and each track 20 is then plastically deformed. There is insertion of each insert 10 by plastic deformation of each corresponding track 20.
- Step 3 the force F is applied until the insertion of the inserts 10 on their total height h in the connection tracks 20.
- Step 4 Unload and remove the press tool.
- the two components 1, 2 are assembled (hybridized) with the electrical connection established between each connection track 20 and each conductive insert 10.
- FIG. 6A shows in detail an assembly at an insert 10 and the corresponding track 20, obtained according to the assembly method which has just been described.
- the insertion force required according to the invention is proportional to the common insertion section between each insert 10 and each track 20.
- a track 20 of unit width e2 much lower than the perimeter circular section of a tube of radius R
- an insertion of a tube 10 of radius R into a single track 20 according to the invention requires a much lower insertion force than an insertion of the same tube in all its circumference as in the state of the art ( Figure 3), in a ratio equal to ⁇ 2 / 2 * ⁇ * R.
- an insertion according to Figure 9 is on a section equal to el * e2 while an insertion according to Figure 3 is on a section equal to el * 2 * 7i * R.
- insertions can be made in two parts of tracks symmetrical with respect to a point.
- unit thickness e2 very thin, typically of the order of the unit wall thickness and an insert.
- a tube in a number equal to eight unit wall thicknesses as shown in FIG. 7. It is thus possible to produce very thin thicknesses e1, e2, typically equal to 0.1. ⁇ , the insertion section equal to 8 * el * e2 then being very small typically equal to 8 * 0.1 * 0.1 or 0.08 ⁇ 2 , and the insertion force required also.
- connections to be made in a step equal to ⁇ with a tube 10 of radius R 2.5 ⁇ .
- such a tube 10 requires an insertion force Fl equal to 4 mN for insertion of its total circumference in an aluminum connection pad, of diameter equal to 7 ⁇ .
- a symmetrical cross-shaped aluminum track 20 is formed (FIG. 8), and an aluminum track 20 in the form of an elongated strip (FIG. 9). of unit thicknesses e2 equal to 1 ⁇ .
- the cross 20 is made with a resumption of contact on a via opening 22 of diameter equal to 2 ⁇ , in the form of a round stud 23 of diameter equal to 3 ⁇ surmounted by the four branches. 20 of unit width e2.
- the track portions 20 to be intercepted by a tube 10 are in the form of at least three branches symmetrically distributed around a point of symmetry. It may therefore be for example three branches distributed at 120 ° to one another, four branches distributed at 90 ° to each other forming a symmetrical cross ( Figure 8), eight branches grouped two by two with one group being distributed at 90 ° from another also forming a symmetrical cross ( Figure 7). This gives an isostatic mechanical connection between inserts and tracks in all directions.
- F2 Fl * 4 * e / 2nR, equal to 0.25 * Fl;
- F3 Fl * e / 2nR, equal to 0.06 * F1.
- the necessary insertion forces were computationally compared by varying the tube diameter of the inserts 10 and the unit thickness of the tracks 20 with the insertion surface Si.
- the studs according to the state of the art and the tracks 20 according to the invention are made of aluminum and that the insertion force calculated at constant pressure for insertion of the total circumference of a tube 10 into a stud. according to the state of the art is equal to 5mn. The force required for the two configurations according to the invention is then compared in order to have the same pressure.
- thermocompression assembly methods according to the state of the art, such as those described in the aforementioned patent applications WO2009 / 1 15686 and EP2287904, the invention makes it possible to considerably reduce the constant insertion force. for a given ductile material.
- An interesting advantage of the invention is that it makes it possible to multiply the number of hybridized points with constant insertion force for a given ductile material.
- the invention it is possible to produce a stack of two assemblies each obtained according to the reduced insertion force assembly method which has just been described.
- the invention has wide applications in all microelectronic devices, intended to operate at high operating temperatures, requiring vertical interconnections (in English "front to front") at very small steps.
- a particularly interesting application of the invention is the production of stacked 3D three-dimensional structures or multi-spectral heterogeneous imagers.
- heterogeneous detection devices of large size, with a large number of insertion connections (cooled IRCMOS, X detectors, etc.),
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Abstract
Description
Procédé d'assemblage de deux composants électroniques, de type Flip-Chip, Assemblage obtenu selon le procédé Method of assembling two electronic components, Flip-Chip type, assembly obtained by the process
Domaine technique Technical area
La présente invention concerne un procédé d'assemblage de deux composants électroniques entre eux, du type à connexions verticales, plus communément appelé procédé « flip-chip » en anglais ou « puce retournée », selon lequel l'un des deux composants électroniques est retourné pour pouvoir effectuer les connexions électriques ou assemblages à la verticale. The present invention relates to a method of assembling two electronic components together, of the type with vertical connections, more commonly called "flip-chip" process in English or "flipped chip", according to which one of the two electronic components is returned to make electrical connections or assemblies vertically.
L'invention permet d'obtenir un assemblage entre composants électroniques quel que soit leur pas d'interconnexion et l'espacement entre ces composants. The invention makes it possible to obtain an assembly between electronic components irrespective of their interconnection pitch and the spacing between these components.
L'invention concerne plus particulièrement l'assemblage entre une puce et un substrat, par exemple tous deux réalisés en silicium. The invention more particularly relates to the assembly between a chip and a substrate, for example both made of silicon.
L'invention vise à réduire la force requise pour réaliser l'assemblage entre composants électroniques. The invention aims to reduce the force required to achieve the assembly between electronic components.
L'invention trouve largement applications dans tous les dispositifs microélectroniques requérant des interconnexions verticales (en anglais « front to front ») à très petit pas. The invention has wide applications in all microelectronic devices requiring vertical interconnections (in English "front to front") at very small steps.
Une application particulièrement intéressante de l'invention est la réalisation de structures tridimensionnelles 3D empilées ou d'imageurs hétérogènes multi-spectraux. A particularly interesting application of the invention is the production of stacked 3D three-dimensional structures or multi-spectral heterogeneous imagers.
Par « assemblage de deux composants électroniques », on entend dans le cadre de l'invention aussi bien un assemblage de deux composants de matériaux différent qu'un assemblage de deux composants réalisés dans le même matériau. En particulier, un assemblage selon l'invention peut concerner un assemblage entre une puce électronique et un substrat, tous deux pouvant être réalisés en silicium. By "assembly of two electronic components" is meant in the context of the invention as well an assembly of two components of different materials than a two-component assembly made of the same material. In particular, an assembly according to the invention may relate to an assembly between an electronic chip and a substrate, both of which may be made of silicon.
Par « pas d'interconnexion », on entend la distance entre deux pistes de connexion sur un même composant électronique. By "no interconnection" is meant the distance between two connection tracks on the same electronic component.
Par « espacement entre composants », on entend l'écartement entre les deux composants en regard défini par la hauteur d'interconnexion. By "spacing between components" is meant the spacing between the two facing components defined by the interconnection height.
Etat de la technique State of the art
La technique dite de « Flip-Chip » est une technique bien connue pour réaliser l'interconnexion mécanique et électrique, ou assemblage entre deux composants, tel qu'entre une puce et un substrat de circuit imprimé. Cette technique est dite « Flip-Chip » car l'un des composants, en général la puce, qui porte des conducteurs, est retourné pour mettre en face-à-face les deux composants pour permettre les opérations d'interconnexions par solidarisation entre les conducteurs et des protubérances métalliques, connues sous l'appellation en anglais « bumps » et formant des contacts réalisés sur l'autre composant, en général un substrat de circuit imprimé. The so-called "Flip-Chip" technique is a well known technique for achieving mechanical and electrical interconnection, or assembly between two components, such as between a chip and a printed circuit substrate. This technique is called "Flip-Chip" because one of the components, usually the chip, which carries conductors, is returned to put the two components face-to-face to allow the operations of interconnections by bonding between the conductors and metal protuberances, known under the naming in English "bumps" and forming contacts made on the other component, generally a printed circuit substrate.
Selon cette technique, on cherche constamment à réduire l'espacement entre composants tout en permettant un nombre de connexions toujours plus élevé. Or, les trois grandes catégories d'assemblage actuellement connues selon cette technique que sont le brasage, la thermocompression et l'utilisation d'adhésifs, tels que les ACF (acronyme anglais d' « Anisotropic Conductive Films »), montrent chacune leurs limites pour réduire l'espacement. According to this technique, it is constantly sought to reduce the spacing between components while allowing a number of connections always higher. However, the three major assembly categories currently known by this technique, namely brazing, thermocompression and the use of adhesives, such as the ACF (acronym for "Anisotropic Conductive Films"), each have their limits for reduce spacing.
En particulier, la thermocompression à basse température par pénétration d'inserts conducteurs dans des protubérances, telle que décrite dans la demande de brevet WO 2006/054005, est limitée par la très grande force à appliquer pour un nombre très élevé de connexions à établir et par la faisabilité de réalisation proprement dite des inserts. In particular, the low-temperature thermocompression by penetration of conductive inserts into protuberances, as described in the patent application WO 2006/054005, is limited by the very great force to be applied for a very large number of connections to be established and by the feasibility of actual realization of the inserts.
Aussi, pour remédier aux limites de cette méthode, la demanderesse a proposé dans la demande de brevet WO 2009/115686, la réalisation d'inserts conducteurs sous forme de tubes borgnes dont la base est solidarisée à la surface d'un composant. Les inserts conducteurs ont fait l'objet d'une demande de brevet de perfectionnement EP2287904 avec au moins une surface de l'extrémité ouverte d'un insert laissée libre de sorte à permettre l'échappement des gaz contenus dans l'insert, lors de l'insertion. Différentes nouvelles formes sont prévues dans cette demande pour les inserts conducteurs, telles que barre ouverte, éléments à section transversale en étoile, en croix, avec lobes... Also, to overcome the limitations of this method, the applicant has proposed in the patent application WO 2009/115686, the production of conductive inserts in the form of blind tubes whose base is secured to the surface of a component. The conductive inserts have been the subject of a patent application EP2287904 perfection with at least one surface of the open end of an insert left free so as to allow the escape of the gases contained in the insert, when insertion. Various new shapes are provided in this application for conductive inserts, such as open bar, cross-section elements star, cross, with lobes ...
On a représenté aux figures 1 , 2 et 3 un assemblage entre deux composants électroniques selon la demande WO 2009/115686 précitée. Un insert creux et ouvert 10 sous la forme d'un tube borgne de section cylindrique est solidarisé par sa base sur la surface d'un substrat 11 d'un premier composant électronique. Une bille 20, typiquement une bille de soudure, est solidarisée à la surface d'un substrat 21 d'un deuxième composant électronique 2. Le matériau de la bille 20 est de dureté inférieure à celle de l'insert 10. Lors de l'assemblage par thermocompression entre les deux composants 1, 2, l'insert 10 est aligné en regard de la bille 20 puis une force F sensiblement constante est appliquée selon la direction X d'assemblage représentée par la flèche (figure 1), jusqu'à l'obtention de l'assemblage, c'est-à-dire l'insertion complète de l'insert 10 dans la bille (figures 2 et 2A). FIGS. 1, 2 and 3 show an assembly between two electronic components according to the above-mentioned application WO 2009/115686. An open and hollow insert 10 in the form of a blind tube of cylindrical section is secured by its base on the surface of a substrate 11 of a first electronic component. A ball 20, typically a solder ball, is secured to the surface of a substrate 21 of a second electronic component 2. The material of the ball 20 is of lower hardness than that of the insert 10. When the thermocompression assembly between the two components 1, 2, the insert 10 is aligned opposite the ball 20 and a substantially constant force F is applied according to the assembly direction X represented by the arrow (FIG. 1), until the assembly is obtained, that is to say the complete insertion of the insert 10 into the ball (FIGS. 2 and 2A) ).
Bien que donnant largement satisfaction notamment en faisabilité de réalisation des inserts, la méthode selon ces demandes de brevet peut être encore améliorée. Although largely satisfactory in particular feasibility of making the inserts, the method according to these patent applications can be further improved.
En particulier, il existe un besoin de diminuer l'intensité de la force à appliquer pour réaliser l'assemblage par thermocompression entre deux composants microélectroniques, notamment lorsque les interconnexions entre composants nécessitent l'utilisation de matériau(x) qui ne doivent pas passer à l'état liquide lors d'étapes d'encapsulation (en anglais « packaging ») ultérieures à l'assemblage proprement dit. In particular, there is a need to reduce the intensity of the force to be applied to achieve the assembly by thermocompression between two microelectronic components, especially when the interconnections between components require the use of material (x) which must not pass to the liquid state during encapsulation steps (in English "packaging") subsequent to the actual assembly.
II a été démontré dans les publications [1] et [2] que pour un même insert réalisé sous la forme d'un microtube, la force d'insertion requise dépend non seulement des propriétés mécaniques du matériau ductile lui-même (dureté, plasticité, ...) dans lequel le plot est réalisé mais aussi de la surface d'insertion ou autrement dit d'intersection entre l'insert 10 et le plot en matériau ductile 20. It has been demonstrated in publications [1] and [2] that for the same insert made in the form of a microtube, the insertion force required depends not only on the mechanical properties of the ductile material itself (hardness, plasticity , ...) in which the stud is made but also of the insertion surface or in other words of intersection between the insert 10 and the pad of ductile material 20.
La publication [3] a d'ailleurs explicité que la force d'insertion d'un tube est directement proportionnelle à la surface d'insertion Si du tube dans le plot et donc à son épaisseur de paroi et à la longueur L de son périmètre. Ainsi, dans l'exemple montré en figure 3, la surface d'insertion Si d'un insert sous forme de microtube de section cylindrique de rayon R et d'épaisseur de paroi el est égale à l'aire de la section du microtube 10 dans un plan horizontal, i.e. dans un plan orthogonal à la direction d'assemblage X, soit Si = 2*7i*R*el . La force d'insertion F est donc égale à F = k* 2*7i*R*el, avec k constante. The publication [3] has moreover explained that the insertion force of a tube is directly proportional to the insertion surface Si of the tube in the stud and therefore to its wall thickness and to the length L of its perimeter. . Thus, in the example shown in FIG. 3, the insertion surface Si of an insert in the form of a microtube with a cylindrical section of radius R and a wall thickness e1 is equal to the area of the section of the microtube 10. in a horizontal plane, ie in a plane orthogonal to the assembly direction X, ie Si = 2 * 7i * R * el. The insertion force F is therefore equal to F = k * 2 * 7i * R * el, with k constant.
En ce qui concerne les propriétés mécaniques du matériau ductile, lorsqu'on souhaite réaliser une insertion à température ambiante, on doit prendre en compte que la force d'insertion est, en approximation du premier ordre, inversement proportionnelle à la fois au module de Young du métal constitutif du plot de connexion et de sa limite d'élasticité à température ambiante. Par ailleurs, parmi les métaux ductile connus, ceux qui présentent le module d'Young le plus faible sont ceux qui présentent des points de fusion les plus proches de la température ambiante. On a indiqué dans le tableau 1 ci-après la liste de métaux ductiles à faible module d'Young et à faible température de fusion. TABLEAU 1 With regard to the mechanical properties of the ductile material, when it is desired to perform an insertion at ambient temperature, it must be taken into account that the insertion force is, in first order approximation, inversely proportional to both the Young's modulus. the constituent metal of the connection pad and its yield strength at room temperature. On the other hand, of the known ductile metals, those with the lowest Young's modulus are those with melting points closest to ambient temperature. The list of ductile metals with low Young's modulus and low melting temperature is shown in Table 1 below. TABLE 1
En sus des considérations précédentes sur les métaux ductiles, il est préconisé, lorsque les assemblages par insertion par thermocompression ont lieu entre une puce électronique et une galette (« wafer » en anglais) ou entre une puce et une autre puce, de réaliser des liaisons avec des matériaux qui ne doivent pas passer à l'état liquide lors des étapes d'encapsulation (« packaging » en anglais) ultérieures à l'insertion. Ces étapes de packaging se font jusqu'à des températures de 230°C. Cette température de 230°C est celle à laquelle les composants électroniques sont soudés sur un circuit imprimé par soudure AgCuSn. In addition to the above considerations on ductile metals, it is recommended, when thermocompression insertion assemblies take place between an electronic chip and a wafer, or between one chip and another chip, to make connections with materials that must not pass to the liquid state during the encapsulation steps ("packaging" in English) subsequent to the insertion. These packaging steps are up to temperatures of 230 ° C. This temperature of 230 ° C is the temperature at which the electronic components are soldered to an AgCuSn solder circuit board.
Aussi, partant du tableau 1 , seul l'aluminium peut répondre à l'ensemble des contraintes techniques. En effet, l'indium a une température de fusion inférieure à 230°C, l'étain est susceptible de créer des défauts dits de whiskers, le plomb est prohibé. Le zinc (Zn) pourrait convenir mais il reste moins avantageux que l'aluminium (Al), ce dernier ayant un module d'Young élevé. Also, starting from Table 1, only aluminum can meet all the technical constraints. Indeed, indium has a melting temperature lower than 230 ° C, tin is likely to create so-called whiskers defects, lead is prohibited. Zinc (Zn) may be suitable but it remains less advantageous than aluminum (Al), the latter having a high Young's modulus.
L'aluminium présente malgré tout un module d'Young conséquent, ce qui a pour inconvénients de: Aluminum nevertheless has a substantial Young's modulus, which has the disadvantages of:
- nécessiter des dimensionnements de machines d'insertion complexes, d'autant plus en cas de nombre de connexions élevé : à titre d'exemple, un nombre de 106 connexions à réaliser conformément à la demande WO2009/115686 nécessite l'application d'une force d'insertion de 5000N ; - require sizing complex insertion machines, especially in case of high number of connections: for example, a number of 106 connections to achieve according to the application WO2009 / 115686 requires the application of a 5000N insertion force;
- nécessiter des durées dédiés à l'insertion, élevés, ces durées étant proportionnelles à la force d'insertion requise; - induire un risque de destruction des couches actives sous-jacentes aux plots de connexion, du fait de la force exercée sur les inserts lors de l'insertion. to require durations dedicated to the insertion, high, these durations being proportional to the insertion force required; - Induce a risk of destruction of the active layers underlying the connection pads, due to the force exerted on the inserts during insertion.
L'inventeur a donc été confronté au problème de réduction des forces d'insertion dans un matériau ductile donné, plus particulièrement dans de l'aluminium. The inventor has therefore been confronted with the problem of reducing the insertion forces in a given ductile material, more particularly in aluminum.
Le but général de l'invention est de proposer une amélioration de méthode d'assemblage selon les demandes de brevet WO2009/115686 et EP2287904 précitées et qui pallie au moins une partie des inconvénients de l'état de l'art mentionné ci-avant. The general object of the invention is to propose an improvement of assembly method according to the aforementioned patent applications WO2009 / 115686 and EP2287904 and which overcomes at least some of the disadvantages of the state of the art mentioned above.
Un but particulier de l'invention est de proposer une solution pour réduire la force d'insertion à appliquer pour réaliser l'assemblage entre deux composants microélectroniques selon une méthode de thermocompression à basse température et pour éviter tout risque de court-circuit électrique entre les inserts conducteurs d'un composant et les pistes de connexion de l'autre composant. A particular object of the invention is to propose a solution for reducing the insertion force to be applied to achieve the assembly between two microelectronic components according to a method of thermocompression at low temperature and to avoid any risk of electrical short circuit between the conductive inserts of one component and the connection tracks of the other component.
Exposé de l'invention Presentation of the invention
Pour ce faire, l'invention a pour objet un procédé d'assemblage de type flip- chip de deux composants électroniques l'un à l'autre, lesdits composants comportant chacun une face dite face d'assemblage, selon lequel on rapproche les deux faces d'assemblage l'une de l'autre selon une direction dite d'assemblage X et on applique une force donnée F à l'un et/ou l'autre des composants, l'une et/ou l'autre face(s) d'assemblage comportant: To do this, the object of the invention is a flip-chip assembly method of two electronic components to one another, said components each comprising a so-called assembly face, according to which the two are brought closer together. assembly faces one of the other in a said assembly direction X and applies a given force F to one and / or the other of the components, one and / or the other face ( s) assembly comprising:
- des inserts de connexion en matériau rigide présentant une forme longitudinale allongée selon la direction X d'assemblage; connecting inserts of rigid material having an elongated longitudinal shape in the X assembly direction;
- des pistes de connexion en matériau de dureté inférieure à celle des inserts et de forme longitudinale allongée transversalement à la direction X d'assemblage; - Connection tracks of material of lower hardness than the inserts and elongate longitudinal shape transverse to the X assembly direction;
procédé selon lequel: method according to which:
- on aligne les inserts en regard des pistes correspondantes de manière à ce que les inserts et les pistes forment deux à deux, après assemblage, au moins une intersection sensiblement transversale, the inserts are aligned opposite the corresponding tracks so that the inserts and the tracks form two by two, after assembly, at least one substantially transverse intersection,
- puis, on applique la force donnée F pour faire pénétrer les inserts dans les pistes jusqu'à obtenir l'assemblage entre les deux composants. - Then apply the given force F to penetrate the inserts in the tracks until the assembly between the two components.
Selon un mode de réalisation préféré, dans lequel les inserts de connexion d'un composant présentent une épaisseur unitaire de paroi(s) el et une longueur unitaire de paroi(s) Ll tandis que les pistes de connexion d'un composant présentent une épaisseur unitaire e2, les épaisseurs unitaires el, e2 étant les plus petites dimensions considérées transversalement à la direction X d'assemblage, la longueur Ll étant la plus grande dimension considérée de paroi(s) transversalement à la direction X d'assemblage, According to a preferred embodiment, in which the connection inserts of a component have a unit wall thickness (s) el and a unitary length of wall (s) L1 while the connection tracks of a component have a thickness unitary e2, the unit thicknesses e1, e2 being the smallest dimensions considered transversely to the assembly direction X, the length L 1 being the largest dimension of wall (s) transverse to the assembly direction X,
procédé selon lequel préalablement à l'alignement des inserts en regard des pistes correspondantes, on détermine les dimensions el, e2, et Ll de sorte que chaque surface d'insertion Si entre un insert et une piste donnés soit sensiblement égale à un multiple N du produit des épaisseurs unitaires N = n*el *e2 où n est un entier, ce multiple N étant très inférieur à la section transversale S 1 d'un insert considérée transversalement à la direction d'assemblage SI = Ll *el . method according to which prior to the alignment of the inserts facing the corresponding tracks, the dimensions el, e2, and Ll are determined so that each insertion surface Si between a given insert and a track is substantially equal to a multiple N of the produces unit thicknesses N = n * el * e2 where n is an integer, this multiple N being much smaller than the cross section S 1 of an insert considered transversely to the assembly direction SI = Ll * el.
Par « très inférieur à la section transversale SI d'un insert », on entend qu'une très faible partie de la section transversale d'un insert rencontre le matériau ductile de connexion lors de l'insertion, cette très faible partie étant par ailleurs suffisante pour assurer la rigidité mécanique de chaque connexion réalisée. Avantageusement, la surface d'insertion Si est inférieure d'au moins 40% à la section transversale SI . By "much smaller than the cross section SI of an insert", it is meant that a very small portion of the cross section of an insert meets the ductile connecting material during insertion, this very small part being otherwise sufficient to ensure the mechanical rigidity of each connection made. Advantageously, the insertion surface Si is at least 40% less than the cross section SI.
Un insert selon l'invention peut comporter une ou plusieurs parois. Aussi par An insert according to the invention may comprise one or more walls. Also by
« longueur unitaire de paroi(s) Ll », on entend le périmètre délimité par la ou les parois. Par exemple, pour une paroi en forme d'étoile, la longueur unitaire est la somme de toutes les longueurs des branches de l'étoile, qui constitue le périmètre. "Unitary length of wall (s) L1" means the perimeter delimited by the wall or walls. For example, for a star-shaped wall, the unit length is the sum of all the lengths of the branches of the star, which constitutes the perimeter.
Une piste de connexion selon l'invention est constituée par un dépôt de métal continu selon toutes formes possibles. Ainsi, un seul insert peut être inséré dans plusieurs parties d'une même piste, et donc la surface d'insertion Si à considérer selon l'invention comporte toutes les intersections entre une épaisseur d'une piste et un insert. A connection track according to the invention consists of a continuous metal deposit in all possible forms. Thus, a single insert can be inserted in several parts of the same track, and therefore the insertion surface Si to consider according to the invention comprises all the intersections between a thickness of a track and an insert.
Autrement dit, l'invention consiste essentiellement à diminuer de manière très importante la section du matériau ductile d'un composant que chaque insert de l'autre composant pénètre lors de l'assemblage par connexion. L'invention est simple à réaliser, puisqu'il est seulement nécessaire de réaliser des pistes de matériau ductile très fines sans qu'il y ait lieu de modifier ni la forme ni les dimensions ni le matériau dur constitutif des inserts ni leur procédé de réalisation connus des demandes de brevet WO2009/115686 et EP2287904 précitées. In other words, the invention essentially consists in very significantly reducing the cross section of the ductile material of a component that each insert of the other component penetrates during connection assembly. The invention is simple to implement, since it is only necessary to make tracks of very thin ductile material without there being any need to modify either the shape or the dimensions or the hard material constituting the inserts or their method of production. known from the aforementioned patent applications WO2009 / 115686 and EP2287904.
Grâce à l'invention, on peut réduire considérablement les forces d'insertion à appliquer pour réaliser les connexions. En corollaire, on supprime ainsi tout dimensionnement complexe des machines d'insertion et on réduit considérablement les durées nécessaires aux étapes d'insertion proprement dites. Thanks to the invention, the insertion forces to be applied to make the connections can be considerably reduced. As a corollary, we thus eliminate everything complex dimensioning of the insertion machines and considerably reduces the durations necessary for the insertion steps themselves.
L'épaisseur unitaire de parois el des inserts peut être comprise entre 0,1 et 1 μιη, de préférence entre 0,1 et 0,5 μιη. The unit thickness of walls and inserts may be between 0.1 and 1 μιη, preferably between 0.1 and 0.5 μιη.
L'épaisseur unitaire des pistes e2 peut être comprise entre 0,05 et 2 μιη, de préférence entre 0,1 et 1 μιη. The unit thickness of the tracks e2 may be between 0.05 and 2 μιη, preferably between 0.1 and 1 μιη.
Selon une variante de réalisation, le matériau constitutif des pistes est de préférence un matériau métallique ductile choisi parmi l'aluminium Al, l'indium In, l'or Au, l'étain Sn, le plomb, Pb, le bismuth, l'antimoine Sb, le zinc Zn, un alliage aluminium- cuivre AlCu, des alliages de SnAgCu, SnAg, AgCu, SnCu. Les pistes en matériau métallique ductile peuvent être avantageusement réalisées par photolithogravure, de type additive ou soustractive, ou par électrolyse du métal ou de l'alliage. According to an alternative embodiment, the constituent material of the tracks is preferably a ductile metallic material chosen from aluminum Al, indium In, Au gold, tin Sn, lead, Pb, bismuth, antimony Sb, zinc Zn, aluminum-copper alloy AlCu, alloys of SnAgCu, SnAg, AgCu, SnCu. Tracks made of ductile metallic material may advantageously be made by photolithography, of the additive or subtractive type, or by electrolysis of the metal or alloy.
Selon une variante de réalisation alternative, le matériau constitutif des pistes peut être un matériau métallique dur choisi parmi le cuivre Cu, le titane Ti, le nitrure de titane Ti , le tungstène W, le nitrure de tungstène WN, le molybdène Mo, l'or Au, le chrome Cr, le nickel Ni, le platine Pt. Les pistes de connexion en matériau métallique dur peuvent être réalisées par photolithogravure, de type additive ou soustractive. Des pistes en Au, Cu ou Ni peuvent être réalisées par croissance électrolytique. According to an alternative embodiment, the material constituting the tracks may be a hard metal material selected from Cu copper, Ti titanium, Ti titanium nitride, W tungsten, WN tungsten nitride, Mo molybdenum, or Au, chromium Cr, nickel Ni, platinum Pt. The connection tracks of hard metal material can be made by photolithography, additive or subtractive type. Au, Cu or Ni tracks can be made by electrolytic growth.
Les pistes en matériau métallique dur sont avantageusement réalisées selon la même technique de réalisation que les inserts. The tracks made of hard metal material are advantageously made according to the same technique as the inserts.
Les inserts selon l'invention sont de préférence des micro-tubes borgnes dont la base est solidarisée à l'un des composants. Les inserts et le cas échéant les pistes de connexion sont ainsi avantageusement fabriqués comme décrit dans la demande de brevet WO2009/115686 ou dans la demande EP 2287904. Lorsque les pistes de connexion sont réalisées selon la technique décrite dans ces demandes, elles peuvent présenter une très grande finesse d'épaisseur e2, avantageusement de l'ordre de 0,1 μιη voire 0,05μιη, ce qui permet de réduire encore plus sensiblement les forces nécessaires à l'insertion des inserts en leur sein. De manière générale, les inserts conducteurs selon l'invention peuvent présenter toute forme : micro-tube, pointe, barre ouverte, élément à section transversale en étoile, en croix, avec lobes .... The inserts according to the invention are preferably blind micro-tubes whose base is secured to one of the components. The inserts and, where appropriate, the connecting tracks are thus advantageously manufactured as described in the patent application WO2009 / 115686 or in the application EP 2287904. When the connecting tracks are produced according to the technique described in these applications, they may have a very large thickness e2, advantageously of the order of 0.1 μιη or 0.05μιη, which allows to reduce even more significantly the forces required for the insertion of the inserts within them. In general, the conductive inserts according to the invention may have any shape: micro-tube, tip, open bar, element cross-section star, cross, with lobes ....
Selon une variante avantageuse, et afin de mieux répartir les contraintes mécaniques lors de l'insertion, les parties de piste de connexion à faire pénétrer par un même tube sont sous forme de branches au moins au nombre de trois réparties de manière symétrique autour d'un point de symétrie, de préférence au nombre de quatre branches réparties à 90 l'une de l'autre. According to an advantageous variant, and in order to better distribute the mechanical stresses during the insertion, the connection track parts to be penetrated by a The same tube is in the form of at least three branches symmetrically distributed around a point of symmetry, preferably at the number of four branches distributed at 90 from one another.
La force F appliquée par insert peut être très faible, de préférence inférieure à 5mN, de préférence inférieure à 0,8mN, typiquement égale à 0,5mN. The force F applied per insert can be very small, preferably less than 5mN, preferably less than 0.8mN, typically equal to 0.5mN.
Avantageusement, l'alignement et l'application de la force F sont réalisés à température ambiante. Advantageously, the alignment and the application of the force F are carried out at ambient temperature.
L'espacement entre les deux composants correspondant à la hauteur H est de préférence compris entre un rapport p/20 et un rapport égal à p/2, p étant le pas d'interconnexion entre deux pistes de connexion d'un composant. The spacing between the two components corresponding to the height H is preferably between a ratio p / 20 and a ratio equal to p / 2, p being the interconnection step between two connection tracks of a component.
Le pas d'interconnexion p entre deux pistes de connexion d'un composant peut être inférieur ou égal à 50 μιη. The interconnection pitch p between two connection tracks of a component may be less than or equal to 50 μιη.
L'espacement entre les deux composants correspondant à la hauteur H est avantageusement inférieur à 20 μιη, typiquement égal à 1 μιη. The spacing between the two components corresponding to the height H is advantageously less than 20 μιη, typically equal to 1 μιη.
Selon un mode de réalisation avantageux, un des composants est une puce et l'autre composant est un substrat de circuit imprimé. According to an advantageous embodiment, one of the components is a chip and the other component is a printed circuit substrate.
Description détaillée detailed description
D'autres avantages et caractéristiques de l'invention ressortiront mieux à la lecture de la description détaillée de l'invention faite à titre illustratif et non limitatif en référence aux figures suivantes parmi lesquelles : Other advantages and features of the invention will emerge more clearly from a reading of the detailed description of the invention, given by way of illustration and without limitation with reference to the following figures among which:
- la figure 1 est une vue schématique en coupe de deux composants électroniques au niveau d'un insert et d'un plot de connexion selon l'art antérieur, avant leur assemblage ; - Figure 1 is a schematic sectional view of two electronic components at an insert and a connection pad according to the prior art, before assembly;
- la figure 2 est une vue schématique en coupe de deux composants électroniques au niveau d'un insert et d'un plot de connexion selon l'art antérieur, une fois leur assemblage réalisé; - Figure 2 is a schematic sectional view of two electronic components at an insert and a connection pad according to the prior art, once assembled;
- la figure 3 est une vue de dessus de la figure 2; FIG. 3 is a view from above of FIG. 2;
- la figure 4 est une vue schématique de dessus de deux composants électroniques au niveau d'un insert et d'une piste de connexion selon un exemple de l'invention, une fois leur assemblage réalisé; - la figure 5 est une vue schématique de dessus de deux composants électroniques au niveau d'un insert et d'une piste de connexion selon un autre exemple de l'invention, une fois leur assemblage réalisé; - Figure 4 is a schematic top view of two electronic components at an insert and a connecting track according to an example of the invention, once assembled; - Figure 5 is a schematic top view of two electronic components at an insert and a connecting track according to another example of the invention, once assembled;
- les figures 6 et 6A sont des vues respectivement de dessus et en coupe de deux composants électroniques au niveau d'un insert et d'une piste de connexion, montrant en détail leur assemblage ; - Figures 6 and 6A are views respectively from above and in section of two electronic components at an insert and a connection track, showing in detail their assembly;
- les figures 7 à 10 sont des vues schématiques de dessus de deux composants électroniques au niveau d'un insert et d'une piste de connexion selon quatre autres exemples de l'invention, une fois leur assemblage réalisé. - Figures 7 to 10 are schematic top views of two electronic components at an insert and a connecting track according to four other examples of the invention, once assembled.
Par souci de clarté, les mêmes références désignant les mêmes éléments d'un composant électronique selon l'état de l'art et d'un composant électronique selon l'invention sont utilisées pour toutes les figures 1 à 10. For the sake of clarity, the same references designating the same elements of an electronic component according to the state of the art and of an electronic component according to the invention are used for all of Figures 1 to 10.
On précise que les différents éléments, en particulier les pistes de connexion, selon l'invention sont représentées uniquement par souci de clarté et qu'ils ne sont pas à l'échelle. It is specified that the various elements, in particular the connection tracks, according to the invention are represented solely for the sake of clarity and that they are not to scale.
Les figures 1 à 3 relatives à un assemblage par insertion selon l'état de l'art ont déjà été commentées en préambule. Elles ne sont pas décrites ici en détail. Figures 1 to 3 relating to an insertion assembly according to the state of the art have already been commented in the preamble. They are not described here in detail.
On a représenté aux figures 4 à 10, un insert de connexion 10 inséré dans une piste de connexion 20 appartenant chacun à l'un de deux composants électroniques 1, 2, tels que des puces électroniques hybridées au moyen d'un outil de presse en appui sur le composant supérieur. FIGS. 4 to 10 show a connection insert 10 inserted in a connection track 20 each belonging to one of two electronic components 1, 2, such as microchips hybridized by means of a press tool. support on the upper component.
Le composant 1, qui est celui retourné, comporte un substrat 11 sur lequel sont solidarisés par leur base des inserts conducteur 10 sous la forme d'un tube borgne, les inserts présentant tous une hauteur h. Le choix des hauteurs h des inserts tient compte avantageusement du pas p minimum entre interconnexions à effectuer. Ainsi, de préférence la hauteur minimale h est de l'ordre de p/20 afin de permettre d'accepter des non planéités entre les composants 1, 2 à assembler. De préférence, la hauteur h maximale est de l'ordre de p/2 afin de limiter les effets dit de flambage pouvant se produire au-delà. The component 1, which is the one returned, comprises a substrate 11 on which are secured by their base conductive inserts 10 in the form of a blind tube, the inserts all having a height h. The choice of heights h inserts advantageously takes into account the minimum pitch p between interconnections to perform. Thus, preferably the minimum height h is of the order of p / 20 in order to allow non-flatness to be accepted between the components 1, 2 to be assembled. Preferably, the maximum height h is of the order of p / 2 in order to limit the so-called buckling effects that can occur beyond.
Pour réaliser ces inserts conducteurs 10, on a procédé avantageusement comme décrit dans la demande de brevet WO2009/1 15686. Chaque insert 10 présente une longueur de paroi Ll et une épaisseur unitaire de paroi el . On appelle ici épaisseur unitaire el la dimension moyenne, ou largeur moyenne, de la paroi de l'insert suivant une direction transversale à la direction longitudinale de celui-ci. Les directions d'épaisseur, de longueur et de hauteur formant localement un repère orthogonal. L'épaisseur unitaire el d'un tube 10 est par exemple égale à 0,2μιη. Chaque tube d'insert 10 peut présenter une forme quelconque en section transversale comme schématisé en figure 4. Il peut s'agir d'un tube à section carrée (figure 5), à section circulaire (figures 7 à 10)... To make these conductive inserts 10, it has advantageously been described as described in the patent application WO2009 / 1 15686. Each insert 10 has a wall length L1 and a unit wall thickness el. The unit thickness is here referred to as the average dimension, or average width, of the wall of the insert in one direction. transverse to the longitudinal direction thereof. The directions of thickness, length and height locally forming an orthogonal reference. The unit thickness el of a tube 10 is for example equal to 0.2μιη. Each insert tube 10 may have any shape in cross section as shown diagrammatically in FIG. 4. It may be a square section tube (FIG. 5), with a circular section (FIGS. 7 to 10).
Le composant 2 comporte quant à lui un substrat 21 sur lequel des pistes de connexion 20 de même hauteur H ont été réalisées. Le choix des hauteurs H des pistes 20 tient compte avantageusement du pas p minimum entre interconnexions à effectuer. Ainsi, de préférence la hauteur minimale H est de l'ordre de p/20 afin de permettre d'accepter des non planéités entre les puces à assembler et la hauteur maximale H est égale à p/2 afin de permettre l'insertion complète d'un tube 10 de hauteur h maximale. On calcule la hauteur H des pistes 20 de sorte qu'elle soit supérieure à celle h des inserts 10 pour éviter que le métal dur des inserts 10 ne vienne buter sur le(s) circuit(s) inférieur(s) aux pistes 20 lors de l'insertion. Chaque piste 20 présente une épaisseur unitaire e2. L'épaisseur unitaire e2 est par exemple égale à Ιμιη. On appelle ici épaisseur unitaire e2 la dimension moyenne, ou largeur moyenne, de la paroi de la piste suivant une direction transversale à la direction longitudinale de celle-ci. Les directions d'épaisseur, de longueur et de hauteur formant localement un repère orthogonal. The component 2 comprises meanwhile a substrate 21 on which connection tracks 20 of the same height H have been made. The choice of heights H of the tracks 20 advantageously takes account of the minimum pitch p between interconnections to be made. Thus, preferably the minimum height H is of the order of p / 20 in order to make it possible to accept non-flatness between the chips to be assembled and the maximum height H is equal to p / 2 in order to allow the complete insertion of a tube 10 of maximum height h. The height H of the tracks 20 is calculated so that it is greater than that of the inserts 10 in order to prevent the hard metal of the inserts 10 from abutting on the circuit (s) below the track (s) 20. insertion. Each track 20 has a unit thickness e2. The unit thickness e2 is for example equal to Ιμιη. Here the unit thickness e2 is the average dimension, or average width, of the wall of the track in a direction transverse to the longitudinal direction thereof. The directions of thickness, length and height locally forming an orthogonal reference.
Les pistes 20 sont réalisées sous forme de motifs linéaires et verticaux. Chaque piste 20 peut être sous la forme d'une unique bande allongée (figures 4 et 9), d'un tube par exemple à section rectangulaire ou carrée (figure 10), d'une croix (figures 5, 7 et 8) avec les branches réunies par un via. Tracks 20 are in the form of linear and vertical patterns. Each track 20 may be in the form of a single elongate strip (FIGS. 4 and 9), of a tube for example of rectangular or square section (FIG. 10), of a cross (FIGS. 5, 7 and 8) with the branches joined by a via.
Selon une variante de réalisation, le matériau constitutif des pistes 20 est un matériau métallique ductile choisi parmi l'aluminium Al, l'indium In, l'or Au, l'étain Sn, le plomb, Pb, le bismuth, l'antimoine Sb, un alliage aluminium-cuivre AlCu, des alliages de SnAgCu, SnAg, AgCu, SnCu. Les pistes en matériau métallique ductile peuvent être réalisées par photolithogravure, de type additive ou soustractive, ou par électrolyse du métal ou de l'alliage. According to an alternative embodiment, the constituent material of the tracks 20 is a ductile metal material selected from Al aluminum, indium In, Au gold, Sn tin, lead, Pb, bismuth, antimony Sb, AlCu aluminum-copper alloy, SnAgCu, SnAg, AgCu, SnCu alloys. The ductile metal material tracks may be made by photolithography, additive or subtractive type, or by electrolysis of the metal or alloy.
Selon une variante de réalisation alternative, le matériau constitutif des pistes est un matériau métallique dur choisi parmi le cuivre Cu, le titane Ti, le nitrure de titane TiN , le tungstène W, le nitrure de tungstène WN, le molybdène Mo, l'or Au, le chrome Cr, le nickel Ni, le platine Pt. Les pistes de connexion en matériau métallique dur peuvent être réalisées par photolithogravure, de type additive ou soustractive. Des pistes en Au, Cu ou Ni peuvent être réalisées par croissance électrolytique. According to an alternative embodiment, the material constituting the tracks is a hard metal material selected from copper Cu, titanium Ti, titanium nitride TiN, tungsten W, tungsten nitride WN, molybdenum Mo, gold Au, Cr chromium, nickel Ni, platinum Pt. Connection tracks of hard metal material can be made by photolithography, additive or subtractive type. Au, Cu or Ni tracks can be made by electrolytic growth.
Selon l'invention, on détermine par calcul, les dimensions el, e2, et Ll de sorte que chaque surface d'insertion Si, Sii +Si2+Si3... entre un insert et une piste donnés soit sensiblement égale à un multiple N du produit des épaisseurs unitaires N = n*el*e2 où n est un entier, ce multiple N étant très inférieur à la section transversale SI d'un insert considérée transversalement à la direction d'assemblage SI = Ll *el . According to the invention, the dimensions el, e2, and Ll are determined by calculation so that each insertion surface Si, Sii + Si 2 + Si 3 ... between an insert and a given track is substantially equal to one multiple N of the product of the unit thicknesses N = n * el * e2 where n is an integer, this multiple N being much smaller than the cross section SI of an insert considered transversely to the assembly direction SI = Ll * el.
Ainsi, en réduisant considérablement la section d'insertion comparativement à celle lors d'une insertion de la section complète d'un tube selon l'état de l'art comme montré en figure 3, on réduit de manière très importante la force d'insertion constante qu'il est nécessaire d'appliquer entre un insert 10 et une piste de connexion 20. Thus, by considerably reducing the insertion section compared to that when inserting the complete section of a tube according to the state of the art as shown in FIG. 3, the force of constant insertion that it is necessary to apply between an insert 10 and a connection track 20.
Autrement dit, selon l'invention on minimise la section d'insertion entre une piste et un insert tout en la maintenant suffisante pour obtenir la rigidité mécanique du contact d'interconnexion souhaitée. En fonction des formes de circuit, on peut réaliser des pistes selon plusieurs configurations possibles et donc avoir un nombre plus ou moins important d'épaisseurs de paroi unitaire e2 intersectées par un même insert 10. Ainsi, un même insert 10 peut être inséré dans une seule épaisseur e2 (figures 4 et 9), dans deux épaisseurs e2 (figure 10), quatre épaisseurs e2 (figures 5 et 8), huit épaisseurs e2 (figure 7)... In other words, according to the invention, the insertion section between a track and an insert is minimized while maintaining it sufficient to obtain the mechanical rigidity of the desired interconnection contact. Depending on the circuit shapes, tracks can be made according to several possible configurations and therefore have a greater or lesser number of unit wall thicknesses e2 intersected by the same insert 10. Thus, the same insert 10 can be inserted into a only thickness e2 (FIGS. 4 and 9), in two thicknesses e2 (FIG. 10), four thicknesses e2 (FIGS. 5 and 8), eight thicknesses e2 (FIG. 7) ...
On décrit maintenant les différentes étapes d'assemblage selon l'invention. The various assembly steps according to the invention are now described.
Etape 1 : on met en approche et aligne les deux composants 1, 2 de sorte à avoir chaque insert 10 en regard d'une partie d'une de connexion 20. Step 1: the two components 1, 2 are approached and aligned so as to have each insert 10 facing a part of a connection 20.
Etape 2 : on applique une force F selon la direction X d'assemblage orthogonale aux faces des substrats supportant les inserts 10 et pistes 20. La force F est appliquée à un outil de presse en appui sur le composant supérieur 1 ce qui entraîne l'insertion des inserts 10 dans les pistes 20. Si désigne la section transversale intersectée par chaque insert 10 et est sensiblement égale à un multiple N du produit des épaisseurs unitaires N = n*el *e2. La section Si est très faible devant la force appliquée, la contrainte engendrée est très élevée et chaque piste 20 est alors déformée plastiquement. Il y a insertion de chaque insert 10 par déformation plastique de chaque piste correspondante 20. Step 2: a force F is applied in the orthogonal assembly direction X to the faces of the substrates supporting the inserts 10 and tracks 20. The force F is applied to a press tool resting on the upper component 1, which causes the insertion of the inserts 10 in the tracks 20. If denotes the cross section intersected by each insert 10 and is substantially equal to a multiple N of the product of the unit thicknesses N = n * el * e2. The section Si is very small compared to the force applied, the stress generated is very high and each track 20 is then plastically deformed. There is insertion of each insert 10 by plastic deformation of each corresponding track 20.
Etape 3 : la force F est appliquée jusqu'à obtenir l'insertion des inserts 10 sur leur hauteur h totale dans les pistes de connexion 20. Etape 4: on réalise un déchargement et un retrait de l'outil de presse. Les deux composants 1, 2 sont assemblés (hybridés) avec la connexion électrique établie entre chaque piste de connexion 20 et chaque insert conducteur 10. Step 3: the force F is applied until the insertion of the inserts 10 on their total height h in the connection tracks 20. Step 4: Unload and remove the press tool. The two components 1, 2 are assembled (hybridized) with the electrical connection established between each connection track 20 and each conductive insert 10.
La figure 6 A montre en détail un assemblage au niveau d'un insert 10 et la piste correspondante 20, obtenu selon le procédé d'assemblage qui vient d'être décrit. FIG. 6A shows in detail an assembly at an insert 10 and the corresponding track 20, obtained according to the assembly method which has just been described.
La force d'insertion requise selon l'invention est proportionnelle à la section d'insertion commune entre chaque insert 10 et chaque piste 20. Ainsi, par exemple, en choisissant une piste 20 de largeur unitaire e2 très inférieure à la section circulaire de périmètre d'un tube de rayon R, une insertion d'un tube 10 de rayon R dans une seule piste 20 conformément à l'invention (figure 9) nécessite une force d'insertion bien moindre qu'une insertion du même tube selon toute sa circonférence comme selon l'état de l'art (figure 3), dans un rapport égal à ε2/2*π *R. The insertion force required according to the invention is proportional to the common insertion section between each insert 10 and each track 20. Thus, for example, by choosing a track 20 of unit width e2 much lower than the perimeter circular section of a tube of radius R, an insertion of a tube 10 of radius R into a single track 20 according to the invention (FIG. 9) requires a much lower insertion force than an insertion of the same tube in all its circumference as in the state of the art (Figure 3), in a ratio equal to ε2 / 2 * π * R.
En effet, une insertion selon la figure 9 se fait sur une section égale à el *e2 tandis qu'une insertion selon la figure 3 se fait sur une section égale à el *2*7i*R. Indeed, an insertion according to Figure 9 is on a section equal to el * e2 while an insertion according to Figure 3 is on a section equal to el * 2 * 7i * R.
Dans les configurations où les interconnexions sont soumises à des sollicitations thermomécaniques importantes, on peut réaliser des insertions selon deux parties de pistes symétriques par rapport à un point. On peut ainsi choisir par exemple d'effectuer plusieurs intersections entre un insert 10 et une piste 20 de manière symétrique autour du centre de l'insert (figures 5, 7 et 8), c'est-à-dire de manière contrebalancée. In configurations where the interconnections are subjected to significant thermomechanical stresses, insertions can be made in two parts of tracks symmetrical with respect to a point. One can thus choose for example to make several intersections between an insert 10 and a track 20 symmetrically around the center of the insert (Figures 5, 7 and 8), that is to say in a counterbalanced manner.
On peut multiplier le nombre de parties de pistes 20 à intercepter par un tube It is possible to multiply the number of parts of tracks 20 to be intercepted by a tube
10, notamment afin d'utiliser des pistes d'épaisseur unitaire e2 très fines, typiquement de l'ordre de l'épaisseur unitaire de paroi el d'un insert. Ainsi à titre d'exemple, on peut réaliser une insertion d'un tube dans un nombre égale à huit épaisseurs unitaires de paroi comme montré en figure 7. On peut ainsi réaliser des épaisseurs el , e2 très fines, typiquement égale à 0,1 μιη, la section d'insertion égale à 8*el *e2 étant alors très faible typiquement égale à 8*0,1 *0,1 soit 0,08μιη2, et la force d'insertion requise également. 10, especially in order to use tracks of unit thickness e2 very thin, typically of the order of the unit wall thickness and an insert. Thus, by way of example, it is possible to insert a tube in a number equal to eight unit wall thicknesses as shown in FIG. 7. It is thus possible to produce very thin thicknesses e1, e2, typically equal to 0.1. μιη, the insertion section equal to 8 * el * e2 then being very small typically equal to 8 * 0.1 * 0.1 or 0.08μιη 2 , and the insertion force required also.
A titre d'exemple, on considère des connexions à réaliser selon un pas égal à ΙΟμιη avec un tube 10 de rayon R=2,5 μιη. For example, we consider connections to be made in a step equal to ΙΟμιη with a tube 10 of radius R = 2.5 μιη.
Selon l'état de l'art, un tel tube 10 nécessite une force d'insertion Fl égale à 4mN pour une insertion de sa circonférence totale dans un plot de connexion en aluminium, de diamètre égal à 7μιη. Selon l'invention, afin de réduire considérablement la force d'insertion on réalise une piste 20 en aluminium en forme de croix symétrisée (figure 8), et une piste 20 en aluminium sous la forme d'une bande allongée (figure 9), d'épaisseurs unitaire e2 égale à 1 μιη. On précise que dans l'exemple représenté, la croix 20 est faite avec une reprise de contact sur une ouverture 22 de via de diamètre égal à 2 μιη, sous la forme d'un plot rond 23 de diamètre égal à 3μιη surmonté des quatre branches 20 de largeur unitaire e2. According to the state of the art, such a tube 10 requires an insertion force Fl equal to 4 mN for insertion of its total circumference in an aluminum connection pad, of diameter equal to 7μιη. According to the invention, in order to reduce the insertion force considerably, a symmetrical cross-shaped aluminum track 20 is formed (FIG. 8), and an aluminum track 20 in the form of an elongated strip (FIG. 9). of unit thicknesses e2 equal to 1 μιη. It should be noted that in the example shown, the cross 20 is made with a resumption of contact on a via opening 22 of diameter equal to 2 μιη, in the form of a round stud 23 of diameter equal to 3μιη surmounted by the four branches. 20 of unit width e2.
De préférence, afin de mieux répartir les contraintes mécaniques lors de l'insertion, les parties de piste 20 à intercepter par un tube 10 sont sous forme de branches au moins au nombre de trois réparties de manière symétrique autour d'un point de symétrie. Il peut donc s'agir par exemple de trois branches réparties à 120° l'une de l'autre, de quatre branches réparties à 90° l'une de l'autre en formant une croix symétrique (figure 8), de huit branches regroupées deux à deux avec un groupe étant réparti à 90° d'un autre en formant également une croix symétrique (figure 7). On obtient ainsi une connexion mécanique isostatique entre inserts et pistes dans toutes les directions. Preferably, in order to better distribute the mechanical stresses during the insertion, the track portions 20 to be intercepted by a tube 10 are in the form of at least three branches symmetrically distributed around a point of symmetry. It may therefore be for example three branches distributed at 120 ° to one another, four branches distributed at 90 ° to each other forming a symmetrical cross (Figure 8), eight branches grouped two by two with one group being distributed at 90 ° from another also forming a symmetrical cross (Figure 7). This gives an isostatic mechanical connection between inserts and tracks in all directions.
Pour une même profondeur d'insertion, les forces d'insertion à appliquer respectivement sur la croix de la figure 8 et de la bande de la figure 9 sont comparativement à la force Fl selon l'état de l'art, égales à : For the same depth of insertion, the insertion forces to be respectively applied to the cross of Figure 8 and the band of Figure 9 are compared to the force Fl according to the state of the art, equal to:
F2= Fl *4*e/2nR, soit égale à 0.25* Fl ; F2 = Fl * 4 * e / 2nR, equal to 0.25 * Fl;
F3= Fl *e/2nR, soit égale à 0.06*F1. F3 = Fl * e / 2nR, equal to 0.06 * F1.
Ainsi, on obtient une réduction très sensible de la force d'insertion requise avec une piste 20 selon l'invention comparativement à une insertion de circonférence totale dans un plot ductile réalisé dans le même matériau selon l'état de l'art. Thus, a very substantial reduction in the insertion force required with a track 20 according to the invention is obtained compared to a total circumferential insertion in a ductile stud made of the same material according to the state of the art.
On a comparé par calcul les forces d'insertion nécessaires en faisant varier le diamètre de tubes des inserts 10 et l'épaisseur unitaire des pistes 20 avec la surface d'insertion Si. The necessary insertion forces were computationally compared by varying the tube diameter of the inserts 10 and the unit thickness of the tracks 20 with the insertion surface Si.
Les résultats, entre une configuration avec insertion selon l'état de l'art (figure 3), une insertion selon l'invention avec une seule piste 20 allongée (figure 9) et une insertion selon l'invention avec une piste 20 sous forme d'un tube à section transversale rectangulaire (figure 10) sont donnés respectivement dans les tableaux 2 à 4 suivants. The results, between an insertion configuration according to the state of the art (FIG. 3), an insertion according to the invention with a single elongated track (FIG. 9) and an insertion according to the invention with a track 20 in the form of of a rectangular cross section tube (Figure 10) are given respectively in Tables 2 to 4 following.
On précise que les plots selon l'état de l'art et les pistes 20 selon l'invention sont en aluminium et que la force d'insertion calculée à pression constante pour une insertion de la circonférence totale d'un tube 10 dans un plot selon l'état de l'art est égale à 5mN. On calcule alors comparativement la force nécessaire pour les deux configurations selon l'invention pour avoir la même pression. It is specified that the studs according to the state of the art and the tracks 20 according to the invention are made of aluminum and that the insertion force calculated at constant pressure for insertion of the total circumference of a tube 10 into a stud. according to the state of the art is equal to 5mn. The force required for the two configurations according to the invention is then compared in order to have the same pressure.
TABLEAU 2 TABLE 2
(ASSEMBLAGE TUBE 10/PLOT DE CONNEXION 20 SELON FIGURE 3) (ASSEMBLY TUBE 10 / CONNECTION PLATE 20 ACCORDING TO FIGURE 3)
De ces tableaux 2 à 4, il ressort que la force d'insertion par insert peut être considérablement réduite grâce à l'invention, de 84 à 97%, dans cet exemple. From these tables 2 to 4, it appears that the insert insertion force can be considerably reduced by the invention, from 84 to 97%, in this example.
En conclusion, comparativement aux procédés d'assemblage par thermocompression selon l'état de l'art, tels que ceux décrits dans les demandes de brevet WO2009/1 15686 et EP2287904 précitées, l'invention permet de diminuer considérablement la force d'insertion constante pour un matériau ductile donné. In conclusion, compared to thermocompression assembly methods according to the state of the art, such as those described in the aforementioned patent applications WO2009 / 1 15686 and EP2287904, the invention makes it possible to considerably reduce the constant insertion force. for a given ductile material.
Un avantage intéressant de l'invention est de permettre de multiplier le nombre de points hybridés à force d'insertion constante pour un matériau ductile donné. An interesting advantage of the invention is that it makes it possible to multiply the number of hybridized points with constant insertion force for a given ductile material.
On peut selon l'invention réaliser un empilement de deux assemblages obtenus chacun selon le procédé d'assemblage à force d'insertion réduite qui vient d'être décrit. L'invention trouve largement applications dans tous les dispositifs microélectroniques, destinés à fonctionner à des températures de fonctionnement élevées, requérant des interconnexions verticales (en anglais « front to front ») à très petit pas. According to the invention, it is possible to produce a stack of two assemblies each obtained according to the reduced insertion force assembly method which has just been described. The invention has wide applications in all microelectronic devices, intended to operate at high operating temperatures, requiring vertical interconnections (in English "front to front") at very small steps.
Une application particulièrement intéressante de l'invention est la réalisation de structures tridimensionnelles 3D empilées ou d'imageurs hétérogènes multi-spectraux. A particularly interesting application of the invention is the production of stacked 3D three-dimensional structures or multi-spectral heterogeneous imagers.
De nombreuses autres applications peuvent être prévues pour l'invention, plus particulièrement pour les matrices : Many other applications may be provided for the invention, more particularly for the matrices:
- de détection hétérogènes, de grande taille, à grand nombre de connexions par insertion (IRCMOS refroidis, détecteurs X, ...), heterogeneous detection devices, of large size, with a large number of insertion connections (cooled IRCMOS, X detectors, etc.),
- sensibles aux températures, hybridées à « froid », c'est-à-dire à température ambiante, - temperature sensitive, hybridized to "cold", that is to say at room temperature,
- sensibles aux contraintes mécaniques. - sensitive to mechanical stresses.
On peut par exemple réaliser de telles matrices en proposant des pistes ductiles en aluminium conformes à l'exemple numérique donné ci-avant: on peut appliquer la même force de l'ordre de 0,5 mN pour réaliser une connexion conforme à l'invention dans un piste 20 en aluminium comme montré en figure 9 que pour une connexion selon l'état de l'art dans un plot en indium 20 comme montré en figure 3. Or, appliquer une faible force pour réaliser l'insertion dans une piste en aluminium est avantageux, car il est bien plus aisé et moins coûteux de réaliser une piste 20 en aluminium comme montré en figure 9 par une technique de photolithographie soustractive (gravure) qu'un plot en indium 20 comme montré en figure 3 par une technique de photolithographie additive (en anglais « lift-off ») ou par électrolyse. For example, it is possible to produce such matrices by proposing ductile aluminum tracks in accordance with the numerical example given above: the same force of the order of 0.5 mN can be applied to make a connection according to the invention. in an aluminum track 20 as shown in FIG. 9 only for a connection according to the state of the art in an indium pad 20 as shown in FIG. 3. However, applying a weak force to effect insertion into a track in FIG. aluminum is advantageous because it is much easier and less expensive to make an aluminum track 20 as shown in FIG. 9 by a subtractive photolithography technique (etching) than an indium pad 20 as shown in FIG. additive photolithography (in English "lift-off") or electrolysis.
D'autres variantes et améliorations peuvent être prévues sans pour autant sortir du cadre de l'invention. Other variants and improvements may be provided without departing from the scope of the invention.
L'invention n'est pas limitée aux exemples qui viennent d'être décrits ; on peut notamment combiner entre elles des caractéristiques des exemples illustrés au sein de variantes non illustrées. Références citées The invention is not limited to the examples which have just been described; it is possible in particular to combine with one another characteristics of the illustrated examples within non-illustrated variants. References cited
[1]: .B. Goubault de Brugière, F.Marion, M. Fendler et al. « Micro tube insertion into indium, copper and other materials for 3D applications. » Proc 60th Electronic Components and Technology Conf, Las Vegas, NV, 2010 pl757 ; [1]: .B. Goubault de Brugière, F.Marion, M. Fendler et al. "Micro tube insertion into indium, copper and other materials for 3D applications. Proc 60th Electronic Components and Technology Conf, Las Vegas, NV, 2010 pl757;
[2]: B. Goubault de Brugière, F. Marion, M. Fendler et al « A ΙΟμηι pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications. », Proc 61th Electronic Components and Technology Conf, Orlando, FL, 2011 pl400 ; [2]: B. Goubault de Brugiere, F. Marion, M. Fendler et al "A ΙΟμηι pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications. Proc 61th Electronic Components and Technology Conf, Orlando, FL, 2011 pl400;
[3]: D. Saint-Patrice, F. Marion, M. Fendler et al. "New Reflow Soldering and Tip in Buried Box (TB2) Techniques For Ultrafine Pitch Megapixels Imaging Array, " Proc 58th Electronic Components and Technology Conf, Orlando, FL, 2008 p 46-53. [3]: D. Saint-Patrice, F. Marion, M. Fendler et al. "New Reflow Soldering and Tip in Buried Box (TB2) Techniques for Ultrafine Pitch Megapixel Imaging Array," Proc. 58th Electronic Components and Technology Inc., Orlando, FL, 2008p 46-53.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1259082A FR2996053A1 (en) | 2012-09-27 | 2012-09-27 | METHOD OF ASSEMBLING TWO ELECTRONIC COMPONENTS, OF THE FLIP-CHIP TYPE, ASSEMBLY OBTAINED ACCORDING TO THE METHOD |
| PCT/IB2013/058896 WO2014049551A1 (en) | 2012-09-27 | 2013-09-26 | Assembly method, of the flip-chip type, for connecting two electronic components, assembly obtained by the method |
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| EP2901473A1 true EP2901473A1 (en) | 2015-08-05 |
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| EP13805536.3A Withdrawn EP2901473A1 (en) | 2012-09-27 | 2013-09-26 | Assembly method, of the flip-chip type, for connecting two electronic components, assembly obtained by the method |
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| EP (1) | EP2901473A1 (en) |
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| JP7525878B2 (en) * | 2020-06-17 | 2024-07-31 | 東北マイクロテック株式会社 | Stacked semiconductor device, and mounted components, base body, and bump connector used therein |
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| JP3830125B2 (en) * | 2000-03-14 | 2006-10-04 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor device |
| JP3506233B2 (en) * | 2000-06-28 | 2004-03-15 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
| JP4520052B2 (en) * | 2001-01-17 | 2010-08-04 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| US6543674B2 (en) * | 2001-02-06 | 2003-04-08 | Fujitsu Limited | Multilayer interconnection and method |
| JP2002313995A (en) * | 2001-04-19 | 2002-10-25 | Mitsubishi Electric Corp | Land grid array type semiconductor device and its mounting method |
| US7015590B2 (en) * | 2003-01-10 | 2006-03-21 | Samsung Electronics Co., Ltd. | Reinforced solder bump structure and method for forming a reinforced solder bump |
| FR2876243B1 (en) | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | DUCTILE BURST CONDUCTIVE PROTUBERANCE COMPONENT AND METHOD FOR ELECTRICAL CONNECTION BETWEEN THIS COMPONENT AND A COMPONENT HAVING HARD CONDUCTIVE POINTS |
| FR2876244B1 (en) * | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | COMPONENT HAVING A HARD-CONDUCTIVE MICROPOINT ASSEMBLY AND METHOD FOR ELECTRICALLY CONNECTING IT WITH A COMPONENT PROVIDED WITH DUCTILE CONDUCTIVE PROTUBERANCES |
| FR2928033B1 (en) * | 2008-02-22 | 2010-07-30 | Commissariat Energie Atomique | CONNECTING COMPONENT HAVING HOLLOW INSERTS. |
| FR2928032B1 (en) * | 2008-02-22 | 2011-06-17 | Commissariat Energie Atomique | CONNECTING COMPONENT HAVING INSERTS WITH COMPENSATING RODS. |
| FR2936359B1 (en) * | 2008-09-25 | 2010-10-22 | Commissariat Energie Atomique | CONNECTION BY EMBOITEMENT OF TWO INSERTS WELDED. |
| FR2949171B1 (en) * | 2009-08-13 | 2011-08-26 | Commissariat Energie Atomique | METHOD FOR ASSEMBLING TWO ELECTRONIC COMPONENTS |
| FR2949172B1 (en) * | 2009-08-13 | 2011-08-26 | Commissariat Energie Atomique | HERMETIC ASSEMBLY OF TWO COMPONENTS AND METHOD OF MAKING SUCH ASSEMBLY |
| JP2011077308A (en) * | 2009-09-30 | 2011-04-14 | Fujitsu Ltd | Method for mounting semiconductor device |
| FR2971081B1 (en) * | 2011-02-02 | 2013-01-25 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING TWO SUBSTRATES CONNECTED BY AT LEAST ONE MECHANICAL AND ELECTRICALLY CONDUCTIVE CONNECTION OBTAINED |
-
2012
- 2012-09-27 FR FR1259082A patent/FR2996053A1/en not_active Withdrawn
-
2013
- 2013-09-26 EP EP13805536.3A patent/EP2901473A1/en not_active Withdrawn
- 2013-09-26 US US14/429,595 patent/US9368473B2/en not_active Expired - Fee Related
- 2013-09-26 WO PCT/IB2013/058896 patent/WO2014049551A1/en active Application Filing
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO2014049551A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2996053A1 (en) | 2014-03-28 |
| US20150235985A1 (en) | 2015-08-20 |
| US9368473B2 (en) | 2016-06-14 |
| WO2014049551A1 (en) | 2014-04-03 |
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