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EP2898540A1 - Module solaire et son processus de fabrication - Google Patents

Module solaire et son processus de fabrication

Info

Publication number
EP2898540A1
EP2898540A1 EP13762819.4A EP13762819A EP2898540A1 EP 2898540 A1 EP2898540 A1 EP 2898540A1 EP 13762819 A EP13762819 A EP 13762819A EP 2898540 A1 EP2898540 A1 EP 2898540A1
Authority
EP
European Patent Office
Prior art keywords
layer
solar module
value
anyone
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13762819.4A
Other languages
German (de)
English (en)
Inventor
Laure-Emmanuelle PERRET-AEBI
Patrick HEINSTEIN
Matthieu Despeisse
Christophe Ballif
Michael Stückelberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique Federale de Lausanne EPFL
Original Assignee
Ecole Polytechnique Federale de Lausanne EPFL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale de Lausanne EPFL filed Critical Ecole Polytechnique Federale de Lausanne EPFL
Priority to EP13762819.4A priority Critical patent/EP2898540A1/fr
Publication of EP2898540A1 publication Critical patent/EP2898540A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/807—Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar modules. More particularly, it relates to a solar module comprising:
  • an amorphous silicon photoelectric device comprising at least a transparent front electrode layer, active layers, which comprise a p-type doped Si layer, an intrinsic Si layer, a n-type doped Si layer, and a transparent back electrode layer,
  • the invention also relates to a method for producing this solar module.
  • a particularly advantageous application of the present invention is for the production of photovoltaic modules intended for generating electrical energy, but the invention also applies, more generally, to any structure in which light radiation is converted into an electrical signal, such as photodetectors.
  • Thin film silicon solar modules can be produced in the superstrate (p-i-n) and in the substrate (n-i-p) configurations. They make use of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon materials ( ⁇ -3 ⁇ : ⁇ ). Thin film silicon solar modules can be designed as single pin (nip) junctions as well as multi-junctions consisting in pin-pin (nip-nip) and pin-pin-pin (nip- nip-nip)stacked modules in order to optimize the use of the full solar spectrum, allowing for improved efficiencies.
  • a-Si:H hydrogenated amorphous silicon
  • ⁇ -3 ⁇ : ⁇ microcrystalline silicon materials
  • the typical prior art relating to the thin film silicon solar module architecture in the superstrate configuration is detailed in Figure 1.
  • the silicon active layers comprising a p-type doped Si layer, an intrinsic Si layer, a n-type doped Si layer, and the front and the back electrodes, all constituting the thin film silicon solar module 2, are all together deposited on a front glass 4 and scribed to ensure series interconnection of the thin film silicon active segments.
  • the thin film silicon module encapsulation process is based on a back reflector 6 (polymer, paint or metallic layer), a polymeric sheet 8 (Poly vinyl butyral PVB, Ethylene vinyl acetate EVA, lonomer, Silicon, Polyolefin) of a thickness between 0.2 - 1.5 mm, and a back glass 10 (glass/glass configuration) or a back sheet (glass/foil configuration).
  • a back reflector 6 polymer, paint or metallic layer
  • a polymeric sheet 8 Poly vinyl butyral PVB, Ethylene vinyl acetate EVA, lonomer, Silicon, Polyolefin
  • An edge sealing (0.3 - 2 cm width) can be used in addition to tightly close the module edges from external contamination.
  • Typical lamination processes are used for the encapsulation process and take place between 80 - 200°C under vacuum and at a pressure between 400 - 1000 mbars.
  • Typical assemblies of thin film photovoltaic modules and lamination process are described in the patent applications US 201 1/0220185, US 7,868,246, US 201 1/0041891 , US 6,288,326 and US 201 1/0237021.
  • Typical polymeric encapsulants are poly vinyl butyral (PVB) (US 2010/0180943, US 201 1/0056555), ethylene vinyl acetate (EVA) (US 2007/0122629), ionomers (US 7,902,452), silicone (US 2008/ 0276983) and fluoropolymers based materials (US 201 1/70129676).
  • PVB poly vinyl butyral
  • EVA ethylene vinyl acetate
  • ionomers US 7,902,452
  • silicone US 2008/ 0276983
  • fluoropolymers based materials US 201 1/70129676
  • Thin film silicon modules typically have a brownish (a-Si:H single junctions) or black (multiple junctions) color rendering, uniform over the module, appealing for aesthetically pleasing integration into buildings.
  • the typical prior art single junction a-Si:H solar modules active layers design is shown in Figure 2.
  • a transparent conductive oxide (TCO) layer 12 is deposited on a glass sheet 1 1 to act as front electrode.
  • a positively doped silicon layer 14 is deposited on the TCO 12 (with a thickness of 5 - 50 nm), followed by a silicon intrinsic layer 16 (with a thickness of 200 - 300 nm), a negatively doped silicon layer (18) (with a typical thickness of 10 - 100 nm) and a back TCO layer (20).
  • Such a-Si:H single junction solar modules can be found on the market with efficiencies in the order of 7 - 7.4 % in the superstrate configuration.
  • Typical architectures can for example be found in the patent publications WO 2012/065957 and in WO 201 1/076466.
  • An object of the present invention is to propose a solar module which is attractive for building integration by exhibiting a uniform color similar to that of traditional roof tiles
  • the present invention relates to a solar module comprising at least:
  • an amorphous silicon photoelectric device comprising at least a transparent front electrode layer, a p-type doped silicon layer, an intrinsic silicon layer, a n-type doped silicon layer, and a transparent back electrode layer,
  • the intrinsic silicon layer of the amorphous silicon photoelectric device has a thickness comprised between 50 nm and 300 nm, and preferably comprised between 100 nm and 200 nm.
  • the solar module further comprises, between the amorphous silicon photoelectric device and the back reflector, a colored encapsulant layer which comprises a coloring agent chosen in such a way that the solar module has a color within a region defined by an x value of 0.15 to 0.75 and a y value of 0.10 to 0.70, and preferably defined by an x value of 0.28 to 0.65 and a y value of 0.20 to 0.50, in a chromaticity diagram of a CIE 1931 Yxy color system using a white light source measured with a D65 light source.
  • a coloring agent chosen in such a way that the solar module has a color within a region defined by an x value of 0.15 to 0.75 and a y value of 0.10 to 0.70, and preferably defined by an x value of 0.28 to 0.65 and a y value of 0.20 to 0.50, in a chromaticity diagram of a CIE 1931 Yxy color system using a white light source measured with a D65 light
  • the present invention relates also to a method for producing a solar module as defined below, said method comprising the following steps of:
  • an amorphous silicon photoelectric device comprising at least a transparent front electrode layer, a p-type doped silicon layer, an intrinsic silicon layer, a n-type doped silicon layer, and a transparent back electrode layer, the intrinsic silicon layer of the amorphous silicon photoelectric device having a thickness comprised between 50 nm and 300 nm, and preferably comprised between 100 nm and 200 nm;
  • a colored encapsulant layer which comprises a coloring agent chosen in such a way that the solar module has a color within a region defined by an x value of 0.15 to 0.75 and a y value of 0.10 to 0.70, and preferably defined by an x value of 0.28 to 0.65 and a y value of 0.20 to 0.50, in a chromaticity diagram of a CIE 1931 Yxy color system using a white light source measured with a D65 light source;
  • the solar module of the invention has a uniform terracotta color similar to the color of traditional roof tiles and can be easily incorporated into the architecture of the buildings.
  • Figure 1 is a schematic cross-section of a typical assembly of a thin film silicon module of the prior art
  • Figure 2 is a schematic cross-section of a typical amorphous silicon (a-Si:H) single junction solar module of the prior art
  • Figure 3 is a schematic cross-section of a solar module of the invention.
  • Figure 4 is a spectral reflectivity curve of a solar module of the invention. Detailed description
  • back means something which is the farthest away from the incoming light side and the term “front” means something which is the closest to the incoming light side.
  • a solar module according to the invention comprises at least:
  • an amorphous silicon photoelectric device 32 comprising at least a transparent front electrode layer 34, a p-type doped silicon layer 36, an intrinsic silicon layer 38, a n-type doped silicon layer 40, and a transparent back electrode layer 42,
  • the a-Si:H intrinsic layer 38 of the amorphous silicon photoelectric device 32 has a thickness comprised between 50 nm and 300 nm, and preferably comprised between 100 nm and 200 nm.
  • the thickness of the a-Si:H intrinsic layer 38 is tailored to vary the color aspect of the thin film silicon a-Si:H solar modules. Most interestingly, this variation of the color aspect of the module is achieved without a strong impact on the module efficiency. This arises from the fact that the thinner is the a-Si:H photoactive element, the lower is the photoinduced degradation (commonly referred to as Staebler-Wronski effect) of the electrical performances
  • the thinner absorber layer leads to a decreased light absorption (pre-requisite to alter the color rendering by enhancing light reflected out of the module)
  • the increased electrical performances result into a performance loss below 3% relative for absorber thicknesses in the range of 100 nm to 200 nm.
  • the p-type doped silicon layer 36 has a thickness comprised between 5 nm and 50 nm, and the n-type doped silicon layer 40 has a thickness comprised between 10 nm and 100 nm, as used in the solar module of the prior art.
  • the solar module further comprises, between the amorphous silicon photoelectric device 32 and the back reflector 44, a colored encapsulant layer 48 which comprises a coloring agent chosen in such a way that the solar module has a color within a region defined by an x value of 0.15 to 0.75 and a y value of 0.10 to 0.70, and preferably defined by an x value of 0.28 to 0.65 and a y value of 0.20 to 0.50, in a chromaticity diagram of a CIE 1931 Yxy color system using a white light source measured with a D65 light source.
  • the colored encapsulant layer 48 may be a polymeric layer, using the typical polymeric encapsulants disclosed in the "background of the invention” section, as poly vinyl butyral (PVB), ethylene vinyl acetate (EVA) ionomers, polyolefin, silicone and fluoropolymers based materials.
  • PVB poly vinyl butyral
  • EVA ethylene vinyl acetate
  • Said colored encapsulant layer 48 has a thickness comprised between 0.15 mm and 0.5 mm.
  • the coloring agent used in the colored encapsulant layer 48 may be selected from the group comprising organic pigments, inorganic pigments, polymeric pigments and dyes, said coloring agent having a color allowing to obtain the color of the solar module as defined above.
  • the colored encapsulant layer 48 may be based on UWin EVA supplied by Guangzhou Uwin Houseware Company Limited, Huayi EVA supplied by Shanghai Huayi Plastics Auxiliary Cooperation Company, Sanken EVA supplied by Guangzhou S&K Glass Machinery Co. Ltd. or Trosifol® colour supplied by Kuraray.
  • the solar modules of the invention may be produced from standard solar modules without expensive modifications. These photovoltaic elements will not only produce electricity but will also be considered as elements incorporated into the architecture of the buildings.
  • the front sheet 30 may be any transparent material.
  • the front sheet 30 is a glass sheet.
  • said front sheet 30 has a thickness comprised between 1 mm and
  • an anti-reflection scheme can be applied at the front glass surface.
  • the solar module of the invention may further comprise a textured glass sheet 50 deposited on the front sheet
  • the front sheet 30 may be a textured glass sheet obtained by imprinting or embossing textures or etching at the front glass sheet 30 to ensure a rough air/glass interface.
  • This additional feature permits to conserve a uniform terra-cotta color rendering for any angles of incidence of the incoming light and any angles of perspective of the observer and it reduces the primary reflection of light at high incident angle light which can create a dazzle.
  • the transparent front electrode layer 34 may be made of any suitable materials, and is preferably a transparent conducting oxide (TCO) layer.
  • TCO transparent conducting oxide
  • such transparent front electrode layer 34 may be made of a material selected from the group comprising FTO (fluorinated tin oxide), ITO (indium tin oxide), IOH (hydrogen doped indium oxide), ZnO and SnO2.
  • said transparent front electrode layer 34 has a thickness comprised between 400 nm and 2000 nm depending on the selected material.
  • the transparent back electrode layer 42 may be made of any suitable materials, and is preferably a transparent conducting oxide (TCO) layer.
  • TCO transparent conducting oxide
  • the transparent back electrode layer 42 may be made of a material selected from the group comprising FTO (fluorinated tin oxide), ITO (indium tin oxide), IOH (hydrogen doped indium oxide), ZnO and SnO2.
  • said transparent back electrode layer 42 has a thickness comprised between 40 nm and 2000 nm depending on the selected material.
  • the back reflector 44 may be formed by a polymeric encapsulant layer by using the typical polymeric encapsulants disclosed in the "background of the invention” section, as poly vinyl butyral (PVB), ethylene vinyl acetate (EVA) ionomers, silicone and fluoropolymers based materials.
  • PVB poly vinyl butyral
  • EVA ethylene vinyl acetate
  • silicone and fluoropolymers based materials Preferably, said polymeric encapsulant layer forming the back reflector 44 may be white or may have exactly the same color as the color of the solar module as defined above.
  • said back reflector 44 has a thickness comprised between 0.2 mm and 0.6 mm.
  • the back sheet 46 may be a back glass sheet or a back polymeric sheet.
  • said back sheet 46 has a thickness comprised between 1 mm mm and 6 mm.
  • the present invention relates also to a method for producing a solar module as defined below, said method comprising the following steps of:
  • an amorphous silicon photoelectric device 32 comprising at least a transparent front electrode layer 34, a p-type doped silicon layer 36, an intrinsic silicon layer 38, a n-type doped silicon layer 40, and a transparent back electrode layer 42, the intrinsic silicon layer 38 of the amorphous silicon photoelectric device 32 having a thickness comprised between 50 nm and 300 nm, and preferably comprised between 100 nm and 200 nm; - depositing on the amorphous silicon photoelectric device 32 a colored encapsulant layer 48 which comprises a coloring agent chosen in such a way that the solar module has a color within a region defined by an x value of 0.15 to 0.75 and a y value of 0.10 to 0.70, and preferably defined by an x value of 0.28 to 0.65 and a y value of 0.20 to 0.50, in a chromaticity diagram of a CIE 1931 Yxy color system using a white light source measured with a D65 light
  • the step of depositing the colored encapsulant layer 48, directly after the back electrode layer 42, may be made through a lamination process.
  • the step of depositing the back reflector 44 may be made through a lamination process of a polymeric encapsulant layer.
  • a solar module of the invention may be prepared by the steps of:
  • a solar grade glass substrate with a typical thickness of 3 mm, most preferably textured, possibly by embossing .
  • a back TCO layer which is substantially transparent, such as ZnO grown by LPCVD with a thickness of 1 .4 ⁇
  • the electrical characteristics are measured with standard conditions of AM 1 .5G illumination.
  • ISC short-circuit current of such a module of the invention is comprised between 9.00mA cm2 to 10.20 mA cm2, compared to a module with a reference encapsulation scheme which has an ISC comprised between 12.32 to 14.5 mA/cm2.
  • Figure 4 shows an exemplary spectral reflectivity curve of a realised solar module according to the invention. It illustrates the color response that may be obtained by the above described arrangement of the combination of a color encapsulant and the thin a-Si:H photoactive element, allowing to obtain the terra cotta like color response of the solar module according to the invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un module solaire comprenant une feuille avant (30), un dispositif photoélectrique de silicium amorphe (32) comprenant au moins une couche d'électrode avant transparente (34), une couche de silicium dopée de type p (36), une couche de silicium intrinsèque (38), une couche de silicium dopée de type n (40), et une couche d'électrode arrière transparente (42), un réflecteur arrière (44), et une feuille arrière (46). La couche de silicium intrinsèque (38) du dispositif photoélectrique de silicium amorphe (32) a une épaisseur comprise entre 50 nm et 300 nm, et de préférence comprise entre 100 nm et 200 nm. De plus, le module solaire comprend en outre, entre le dispositif photoélectrique de silicium amorphe (32) et le réflecteur arrière (44), une couche d'agent d'encapsulation colorée (48) qui comprend un agent colorant choisi de telle sorte que le module solaire a une couleur à l'intérieur d'une région définie par une valeur x de 0,15 à 0,75 et une valeur y de 0,10 à 0,70, et de préférence définie par une valeur x de 0,28 à 0,65 et une valeur y de 0,20 à 0,50, dans un diagramme de chromaticité d'un système de couleur Yxy 1931 CIE. De tels modules solaires ont une couleur de terre cuite uniforme similaire à la couleur de tuiles de toit traditionnelles et peuvent être facilement incorporés dans l'architecture des bâtiments.
EP13762819.4A 2012-09-21 2013-09-13 Module solaire et son processus de fabrication Withdrawn EP2898540A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13762819.4A EP2898540A1 (fr) 2012-09-21 2013-09-13 Module solaire et son processus de fabrication

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12185495.4A EP2711990A1 (fr) 2012-09-21 2012-09-21 Module solaire et méthode associée
PCT/EP2013/069071 WO2014044620A1 (fr) 2012-09-21 2013-09-13 Module solaire et son processus de fabrication
EP13762819.4A EP2898540A1 (fr) 2012-09-21 2013-09-13 Module solaire et son processus de fabrication

Publications (1)

Publication Number Publication Date
EP2898540A1 true EP2898540A1 (fr) 2015-07-29

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EP12185495.4A Withdrawn EP2711990A1 (fr) 2012-09-21 2012-09-21 Module solaire et méthode associée
EP13762819.4A Withdrawn EP2898540A1 (fr) 2012-09-21 2013-09-13 Module solaire et son processus de fabrication

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EP12185495.4A Withdrawn EP2711990A1 (fr) 2012-09-21 2012-09-21 Module solaire et méthode associée

Country Status (3)

Country Link
EP (2) EP2711990A1 (fr)
CN (1) CN104718628A (fr)
WO (1) WO2014044620A1 (fr)

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WO2016095977A1 (fr) * 2014-12-16 2016-06-23 Ecole Polytechnique Federale De Lausanne (Epfl) Module solaire et son procédé de production
CN107154775A (zh) * 2017-05-08 2017-09-12 四川浩能新能源有限公司 一种提高光利用的光伏瓦
ES2837041T3 (es) * 2018-02-23 2021-06-29 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Módulo solar con efecto de color homogéneo
WO2019214122A1 (fr) * 2018-05-08 2019-11-14 北京汉能光伏投资有限公司 Module de cellule solaire

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