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EP2671251A2 - Method and device for electrically contact-connecting connection areas of two substrates - Google Patents

Method and device for electrically contact-connecting connection areas of two substrates

Info

Publication number
EP2671251A2
EP2671251A2 EP12714202.4A EP12714202A EP2671251A2 EP 2671251 A2 EP2671251 A2 EP 2671251A2 EP 12714202 A EP12714202 A EP 12714202A EP 2671251 A2 EP2671251 A2 EP 2671251A2
Authority
EP
European Patent Office
Prior art keywords
substrates
electrically contact
connection areas
connecting connection
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12714202.4A
Other languages
German (de)
French (fr)
Inventor
Ghassem Azdasht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pac Tech Packaging Technologies GmbH
Original Assignee
Pac Tech Packaging Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pac Tech Packaging Technologies GmbH filed Critical Pac Tech Packaging Technologies GmbH
Publication of EP2671251A2 publication Critical patent/EP2671251A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in subclasses H10F, H10H, H10K or H10N
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    • H01L2224/81065—Composition of the atmosphere being reducing
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    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
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    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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    • H01L2224/81909—Post-treatment of the bump connector or bonding area
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Definitions

  • the present invention relates to a method for electrically contacting pads of two substrates, wherein the first substrate with its second substrate facing pads is directly and electrically connected mechanically to the pads of the second substrate and the pads of the first substrate are provided with a Lotstoffön Ltd.
  • the first substrate may be a chip and the second substrate a carrier substrate, wherein the chip is contacted face-down with its chip pads against the substrate pads.
  • the invention relates to an apparatus for carrying out a second phase of the method according to the invention.
  • CONFIRMATION COPY facing pads and previously applied to the pads of the chip solder is mounted directly on the carrier substrate or a printed circuit board.
  • the solder agent application is reflowed during reflow soldering in a soldering oven and connects to the connection surfaces of the carrier substrate.
  • phase I the chip is positioned with its pads against the pads of the substrate and the chip pads and / or the substrate pads are provided with a LotstoffKU.
  • phase I the chip is applied with laser energy to the rear, in such a way that the solder is melted or fused at least to the extent to allow a fixation of the chip on the substrate, wherein at the same time a leveling or a uniform flattening of the chips on the chip pads . Plotted on the substrate pads Lotstoffträge takes place, so that a contact is made between all chip pads and substrate pads.
  • an arrangement of the component arrangement formed by the chip and the substrate takes place in a housing which is designed such that, during a reflow of the solder material application, the component arrangement is acted upon by a flux medium, in particular in gaseous form, which preferably consists of a nitrogen - / formic acid mixture consists.
  • a flux medium in particular in gaseous form, which preferably consists of a nitrogen - / formic acid mixture consists.
  • FIG. 1 shows a device for carrying out the method during phase II, after the above-described fixation of the chip on the substrate has previously been carried out in the phase I not shown here.
  • the component assembly is transferred to the position shown in FIG. 1, in which it is located below the housing 3 and then the housing 3 is lowered over the component assembly, as shown in Fig. 1.
  • the component arrangement formed from the chip 6 and the substrate 7 is located in an interior of a housing 3 sealed to the outside by a seal 2 relative to a support table 1.
  • the housing 3 has a wall which is otherwise substantially gas-tight in relation to the surroundings Inflow opening 8 and an outlet Flow opening 9, which allow a flow or flushing or flooding of the housing interior with a gaseous medium.
  • the substantially parallel to a rear side of the chip 6 arranged housing wall is formed by a glass plate or a transparent plate, which allows a backward loading of the chip with laser energy 5, wherein the laser radiation is focused according to the dimensions of the back of the chip 6 to a to avoid direct heat input or energy input into the substrate 7.
  • a reflow of the solder deposit 10 arranged between the chip connection surfaces and the substrate connection surfaces occurs during a flow through the housing interior with a flux gas, which in the present case is formed from a mixture of nitrogen and formic acid.
  • a nitrogen flow outside the housing 3 can be passed over a surface of a formic acid bath, so that the entrained fumes of formic acid mix with the nitrogen prior to the inflow into the housing 3.
  • a flow or purging of the interior of the housing 3 with a preferably pure protective gas flow, in which case preferably a nitrogen flow is used, for flux deposits, ie here in particular Precipitates of formic acid to avoid on the device assembly 6/7.
  • a nitrogen flow is used, for flux deposits, ie here in particular Precipitates of formic acid to avoid on the device assembly 6/7.
  • any gaseous flux which produces comparable effects can be used instead of the formic acid exemplified here.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Laser Beam Processing (AREA)
EP12714202.4A 2011-02-02 2012-01-30 Method and device for electrically contact-connecting connection areas of two substrates Withdrawn EP2671251A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011010161 2011-02-02
PCT/DE2012/000068 WO2012103868A2 (en) 2011-02-02 2012-01-30 Method and device for electrically contact-connecting connection areas of two substrates

Publications (1)

Publication Number Publication Date
EP2671251A2 true EP2671251A2 (en) 2013-12-11

Family

ID=45954256

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12714202.4A Withdrawn EP2671251A2 (en) 2011-02-02 2012-01-30 Method and device for electrically contact-connecting connection areas of two substrates

Country Status (6)

Country Link
US (1) US9649711B2 (en)
EP (1) EP2671251A2 (en)
JP (1) JP2014506012A (en)
KR (1) KR20140014156A (en)
CN (1) CN103477424B (en)
WO (1) WO2012103868A2 (en)

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Publication number Priority date Publication date Assignee Title
CN104842069A (en) * 2014-02-13 2015-08-19 泰科电子(上海)有限公司 Laser welding system
WO2017025744A1 (en) * 2015-08-13 2017-02-16 Bae Systems Plc Apparatus and method for communications management
US20180270833A1 (en) * 2015-09-25 2018-09-20 Gary David Boudreau Interference management for multiuser in-coverage device to device communication
FR3061801A1 (en) * 2017-01-12 2018-07-13 Commissariat Energie Atomique METHOD FOR ELECTRICAL CONNECTION BETWEEN AT LEAST TWO ELEMENTS
KR102052904B1 (en) 2018-03-27 2019-12-06 순천향대학교 산학협력단 Dice game apparatus for cognitive function test
DE102018114013A1 (en) * 2018-06-12 2019-12-12 Osram Opto Semiconductors Gmbh METHOD FOR FIXING A SEMICONDUCTOR CHIP ON A SURFACE, METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT
KR102208069B1 (en) * 2019-01-29 2021-01-27 주식회사 프로텍 Laser Bonding Apparatus for Semi-conductor Chip in Nitrogen Atmosphere
US11651973B2 (en) 2020-05-08 2023-05-16 International Business Machines Corporation Method and apparatus of processor wafer bonding for wafer-scale integrated supercomputer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH459316A (en) * 1965-06-18 1968-07-15 Ibm Method for the correct contact insertion of microminiaturized circuit elements in an integrated circuit
US3486223A (en) * 1967-04-27 1969-12-30 Philco Ford Corp Solder bonding
JPH06262743A (en) * 1993-03-11 1994-09-20 Seiko Epson Corp Bonding device
JPH0774209A (en) * 1993-09-01 1995-03-17 Nippondenso Co Ltd Manufacture of semiconductor device
DE69401108T2 (en) * 1993-09-28 1997-04-03 At & T Corp Surface mount soldering arrangement of integrated circuit packs without wire connections
WO2005005088A2 (en) * 2003-07-01 2005-01-20 Chippac, Inc. Method and apparatus for flip chip attachment by post-collapse re-melt and re-solidification of bumps
JP2005294823A (en) * 2004-03-11 2005-10-20 Hitachi Metals Ltd System and method for forming connection bumps of electronic component or the like, and device and method for bonding conductive balls
DE60219779T2 (en) * 2001-03-28 2007-12-27 Intel Corp., Santa Clara FLUX-FREE FLIP CHIP CONNECTION
US20080268571A1 (en) * 2007-04-24 2008-10-30 Samsung Techwin Co., Ltd. Apparatus for heating chip, flip chip bonder having the apparatus, and method for bonding flip chip using the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278867A (en) * 1978-12-29 1981-07-14 International Business Machines Corporation System for chip joining by short wavelength radiation
DE3737563A1 (en) * 1987-11-05 1989-05-18 Ernst Hohnerlein SOLDERING MACHINE
JPH0763861B2 (en) * 1989-10-23 1995-07-12 日産自動車株式会社 Panel parts welding equipment
JPH04186696A (en) * 1990-11-16 1992-07-03 Mitsubishi Electric Corp bonding equipment
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
JPH0677638A (en) * 1992-08-21 1994-03-18 Matsushita Electric Ind Co Ltd Laser soldering equipment
DE4443822C2 (en) * 1994-12-09 1997-07-10 Telefunken Microelectron Laser soldering process
JP3285294B2 (en) * 1995-08-08 2002-05-27 太陽誘電株式会社 Circuit module manufacturing method
DE19751487A1 (en) * 1997-11-20 1999-06-02 Pac Tech Gmbh Method and device for the thermal connection of pads of two substrates
JP2000174059A (en) * 1998-12-09 2000-06-23 Matsushita Electric Ind Co Ltd Electronic component mounting method
JP2001156436A (en) * 1999-11-30 2001-06-08 Ueda Japan Radio Co Ltd Electronic component soldering method
JP3404021B2 (en) * 2001-01-18 2003-05-06 富士通株式会社 Soldering equipment
JP3350529B1 (en) 2001-06-07 2002-11-25 富士通株式会社 Solder joining apparatus and solder joining method
TW570856B (en) * 2001-01-18 2004-01-11 Fujitsu Ltd Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
DE10213577B3 (en) * 2002-03-26 2004-02-19 Siemens Ag Process for simultaneous laser beam soldering
JP4522752B2 (en) * 2004-06-10 2010-08-11 三菱電機株式会社 Terminal joining method by soldering
US20090045444A1 (en) * 2007-08-13 2009-02-19 Holger Huebner Integrated device and circuit system
US7642135B2 (en) 2007-12-17 2010-01-05 Skyworks Solutions, Inc. Thermal mechanical flip chip die bonding
JP5378078B2 (en) * 2009-06-19 2013-12-25 株式会社東芝 Manufacturing method of semiconductor device
JP4901933B2 (en) * 2009-09-29 2012-03-21 株式会社東芝 Manufacturing method of semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH459316A (en) * 1965-06-18 1968-07-15 Ibm Method for the correct contact insertion of microminiaturized circuit elements in an integrated circuit
US3486223A (en) * 1967-04-27 1969-12-30 Philco Ford Corp Solder bonding
JPH06262743A (en) * 1993-03-11 1994-09-20 Seiko Epson Corp Bonding device
JPH0774209A (en) * 1993-09-01 1995-03-17 Nippondenso Co Ltd Manufacture of semiconductor device
DE69401108T2 (en) * 1993-09-28 1997-04-03 At & T Corp Surface mount soldering arrangement of integrated circuit packs without wire connections
DE60219779T2 (en) * 2001-03-28 2007-12-27 Intel Corp., Santa Clara FLUX-FREE FLIP CHIP CONNECTION
WO2005005088A2 (en) * 2003-07-01 2005-01-20 Chippac, Inc. Method and apparatus for flip chip attachment by post-collapse re-melt and re-solidification of bumps
JP2005294823A (en) * 2004-03-11 2005-10-20 Hitachi Metals Ltd System and method for forming connection bumps of electronic component or the like, and device and method for bonding conductive balls
US20080268571A1 (en) * 2007-04-24 2008-10-30 Samsung Techwin Co., Ltd. Apparatus for heating chip, flip chip bonder having the apparatus, and method for bonding flip chip using the same

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KR20140014156A (en) 2014-02-05
WO2012103868A8 (en) 2012-11-15
CN103477424A (en) 2013-12-25
WO2012103868A3 (en) 2012-09-27
WO2012103868A2 (en) 2012-08-09
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US20140027418A1 (en) 2014-01-30
US9649711B2 (en) 2017-05-16

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