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EP2518767A3 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
EP2518767A3
EP2518767A3 EP12164941.2A EP12164941A EP2518767A3 EP 2518767 A3 EP2518767 A3 EP 2518767A3 EP 12164941 A EP12164941 A EP 12164941A EP 2518767 A3 EP2518767 A3 EP 2518767A3
Authority
EP
European Patent Office
Prior art keywords
transistor
semiconductor device
capacitor
memory element
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12164941.2A
Other languages
German (de)
French (fr)
Other versions
EP2518767A2 (en
Inventor
Yoshinori Ieda
Atsuo Isobe
Yutaka Shionoiri
Tomoaki Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of EP2518767A2 publication Critical patent/EP2518767A2/en
Publication of EP2518767A3 publication Critical patent/EP2518767A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)

Abstract

Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor (102p) including crystalline silicon in a channel formation region, a capacitor (136) for storing data of the memory element, and a second transistor (121) which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film (120) covering the first transistor. The first and second transistors have a source electrode or a drain electrode (163) in common.
EP12164941.2A 2011-04-29 2012-04-20 Semiconductor device Withdrawn EP2518767A3 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011102569 2011-04-29
JP2011102571 2011-04-29
JP2011113238 2011-05-20
JP2011113237 2011-05-20

Publications (2)

Publication Number Publication Date
EP2518767A2 EP2518767A2 (en) 2012-10-31
EP2518767A3 true EP2518767A3 (en) 2016-07-27

Family

ID=46298224

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12164941.2A Withdrawn EP2518767A3 (en) 2011-04-29 2012-04-20 Semiconductor device

Country Status (6)

Country Link
US (4) US9111795B2 (en)
EP (1) EP2518767A3 (en)
JP (3) JP5934566B2 (en)
KR (1) KR101958383B1 (en)
CN (2) CN106981489B (en)
TW (1) TWI556234B (en)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11605630B2 (en) * 2009-10-12 2023-03-14 Monolithic 3D Inc. 3D integrated circuit device and structure with hybrid bonding
US8946066B2 (en) * 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8804405B2 (en) * 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 Semiconductor storage
KR101976212B1 (en) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN102646699B (en) * 2012-01-13 2014-12-10 京东方科技集团股份有限公司 Oxide TFT (thin film transistor) and manufacturing method thereof
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150085035A (en) 2012-11-15 2015-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
US9224478B2 (en) * 2013-03-06 2015-12-29 Freescale Semiconductor, Inc. Temperature-based adaptive erase or program parallelism
JP6111458B2 (en) * 2013-03-28 2017-04-12 株式会社Ｊｏｌｅｄ Semiconductor device, display device and electronic apparatus
US9172369B2 (en) * 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
KR102442752B1 (en) 2013-05-20 2022-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device
US9293599B2 (en) * 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI566328B (en) * 2013-07-29 2017-01-11 高效電源轉換公司 Gallium nitride transistor having a polysilicon layer for generating additional components
WO2015060133A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9257407B2 (en) * 2013-10-28 2016-02-09 Qualcomm Incorporated Heterogeneous channel material integration into wafer
US9960280B2 (en) * 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6305067B2 (en) * 2014-01-09 2018-04-04 株式会社東芝 Manufacturing method of semiconductor device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
KR102251177B1 (en) * 2014-02-24 2021-05-12 엘지디스플레이 주식회사 Thin Film Transistor Substrate And Display Using The Same
EP2911195B1 (en) 2014-02-24 2020-05-27 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911200B1 (en) 2014-02-24 2020-06-03 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
JP6509596B2 (en) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6541398B2 (en) * 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 Semiconductor device
US9461144B2 (en) 2014-06-13 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method for semiconductor device fabrication
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
KR102303957B1 (en) * 2014-09-30 2021-09-27 엘지디스플레이 주식회사 Oxide Semiconductor Thin Film Transistor And Method For Manufacturing The Same
KR102327145B1 (en) * 2014-09-30 2021-11-16 삼성전자주식회사 Integrated circuit for estimating power of at least one node using temperature and system having the same
US9903764B2 (en) * 2014-09-30 2018-02-27 Samsung Electronics Co., Ltd. Integrated circuit for estimating power of at least one node using temperature and a system including the same
WO2016067159A1 (en) * 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Functional panel, method for manufacturing the same, module, data processing device
KR102799986B1 (en) * 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, module, and electronic device
US10706790B2 (en) 2014-12-01 2020-07-07 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
KR102526654B1 (en) * 2015-03-03 2023-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 An oxide semiconductor film, a semiconductor device including the oxide semiconductor film, and a display device including the semiconductor device
KR102582523B1 (en) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
KR102788207B1 (en) * 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10192995B2 (en) * 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104966696B (en) * 2015-05-06 2017-11-28 深圳市华星光电技术有限公司 The preparation method and its structure of TFT substrate
JP2017022377A (en) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 Semiconductor device
US9917017B2 (en) 2015-12-29 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Replacement gate process for semiconductor devices
JP6692645B2 (en) * 2016-01-15 2020-05-13 株式会社ジャパンディスプレイ Semiconductor device
JP2017224676A (en) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ Semiconductor device and display device
JP6541623B2 (en) * 2016-06-20 2019-07-10 東京エレクトロン株式会社 Plasma processing apparatus and waveform correction method
US10381100B2 (en) * 2016-07-01 2019-08-13 Synopsys, Inc. Enhancing memory yield and performance through utilizing nanowire self-heating
KR102458660B1 (en) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
KR102768407B1 (en) * 2016-08-29 2025-02-18 삼성디스플레이 주식회사 Display apparatus and method of manufacturing the same
WO2018051208A1 (en) 2016-09-14 2018-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2018074076A (en) * 2016-11-02 2018-05-10 株式会社ジャパンディスプレイ Display device
US10147681B2 (en) 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2018157101A (en) 2017-03-17 2018-10-04 東芝メモリ株式会社 Transistor, memory, and method of manufacturing transistor
US10714400B2 (en) 2017-08-30 2020-07-14 Micron Technology, Inc. Methods of forming semiconductor structures comprising thin film transistors including oxide semiconductors
KR102616996B1 (en) 2017-09-05 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, and manufacturing method for semiconductor device
WO2019123109A1 (en) * 2017-12-22 2019-06-27 株式会社半導体エネルギー研究所 Semiconductor device
JP2019145616A (en) 2018-02-19 2019-08-29 株式会社東芝 Semiconductor device
KR20240152426A (en) * 2018-03-29 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Storage device and electronic device
CN109459396B (en) * 2018-12-04 2023-08-25 南京信息工程大学 Online laser detection analyzer for carbon isotopes of atmospheric particulates and application method thereof
KR102537379B1 (en) * 2018-12-21 2023-05-26 삼성디스플레이 주식회사 Light emitting diode display device
JP2020136312A (en) * 2019-02-13 2020-08-31 株式会社ジャパンディスプレイ Semiconductor device and method for manufacturing semiconductor device
CN112071915B (en) * 2019-06-10 2025-07-22 堺显示器制品株式会社 Thin film transistor, method of manufacturing the same, and display device
CN110854172B (en) * 2019-11-26 2022-07-29 京东方科技集团股份有限公司 Semiconductor device, pixel circuit, display panel, and display device
CN111952185B (en) * 2020-08-21 2024-03-29 中国科学院上海微系统与信息技术研究所 SOI device that can reduce alignment difficulty and its preparation method
CN115885389A (en) 2020-08-27 2023-03-31 株式会社半导体能源研究所 Semiconductor device, display device, and electronic apparatus
CN114446998A (en) * 2022-01-17 2022-05-06 广州华星光电半导体显示技术有限公司 Array substrate and display panel
CN120753018A (en) 2023-03-16 2025-10-03 株式会社日本显示器 Semiconductor device with a semiconductor device having a plurality of semiconductor chips
JP2024131628A (en) 2023-03-16 2024-09-30 株式会社ジャパンディスプレイ Semiconductor Device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100148171A1 (en) * 2008-12-15 2010-06-17 Nec Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
US20110089417A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011074408A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
US20110147737A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) * 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347448A (en) 1980-11-07 1982-08-31 Mostek Corporation Buffer circuit for semiconductor memory
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPS63210023A (en) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater Compound having a hexagonal layered structure represented by InGaZn↓4O↓7 and its manufacturing method
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH04132309A (en) 1990-09-22 1992-05-06 Mitsubishi Electric Corp Output buffer circuit
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
DE69324864T2 (en) * 1992-08-21 1999-10-07 Stmicroelectronics, Inc. A method of manufacturing a vertical type semiconductor memory structure, and the structure of the method
JP3298974B2 (en) 1993-03-23 2002-07-08 電子科学株式会社 Thermal desorption gas analyzer
JPH0778484A (en) 1993-07-13 1995-03-20 Nkk Corp Storage element, non-volatile memory, non-volatile storage device and information storage method using the same
JPH07121444A (en) 1993-10-21 1995-05-12 Fuji Xerox Co Ltd Auxiliary storage device
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
KR100394896B1 (en) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. A semiconductor device including a transparent switching element
CN1101049C (en) * 1995-12-07 2003-02-05 中国科学院上海硅酸盐研究所 Non-volatility integral ferroelectric film memory
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
JP3598197B2 (en) * 1997-03-19 2004-12-08 株式会社ルネサステクノロジ Semiconductor device
JP2950313B2 (en) 1998-01-19 1999-09-20 日本電気株式会社 Input buffer circuit of semiconductor integrated circuit
JP4170454B2 (en) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin film transistor
JP4090716B2 (en) 2001-09-10 2008-05-28 雅司 川崎 Thin film transistor and matrix display device
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 Semiconductor memory device and test method thereof
DE10152034B4 (en) 2001-10-23 2004-08-26 Infineon Technologies Ag memory array
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (en) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 Transparent thin film field effect transistor using homologous thin film as active layer
JP4083486B2 (en) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 Method for producing LnCuO (S, Se, Te) single crystal thin film
CN1445821A (en) 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) 2002-03-26 2007-06-20 淳二 城戸 Organic electroluminescent device
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Semiconductor device and method of manufacturing the semiconductor device
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004079735A (en) 2002-08-15 2004-03-11 Nec Corp Method for manufacturing thin film transistor
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US6774415B2 (en) 2003-01-02 2004-08-10 International Business Machines Corporation Method and structure for ultra-thin film SOI isolation
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Sharp Corp Active matrix substrate and manufacturing method thereof
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7221605B2 (en) 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
JP2006100760A (en) 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin film transistor and manufacturing method thereof
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI412138B (en) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI481024B (en) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
JP5008323B2 (en) 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 Memory device
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
WO2006111766A2 (en) * 2005-04-21 2006-10-26 3T Technologies Limited Methods and apparatus for the manufacture of microstructures
GB2425401A (en) * 2005-04-21 2006-10-25 Stuart Philip Speakman Manufacture of microstructures using peelable mask
US7868320B2 (en) * 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 OLED display and manufacturing method thereof
EP1917656B1 (en) 2005-07-29 2016-08-24 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic EL display device and manufacturing method thereof
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide semiconductor channel thin film transistor and method for manufacturing the same
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
CN101667544B (en) 2005-11-15 2012-09-05 株式会社半导体能源研究所 Semiconductor device and method of manufacturing a semiconductor device
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社 ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
JP4087416B2 (en) * 2006-04-06 2008-05-21 シャープ株式会社 Power IC device and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
JP5285235B2 (en) 2006-04-28 2013-09-11 株式会社半導体エネルギー研究所 Semiconductor device
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP5127183B2 (en) * 2006-08-23 2013-01-23 キヤノン株式会社 Thin film transistor manufacturing method using amorphous oxide semiconductor film
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color EL display and manufacturing method thereof
KR100843143B1 (en) * 2006-12-08 2008-07-02 삼성전자주식회사 Semiconductor device and manufacturing method thereof
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light emitting display device using same
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistors and methods of manufacturing the same and flat panel displays comprising thin film transistors
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
JP5043499B2 (en) * 2007-05-02 2012-10-10 財団法人高知県産業振興センター Electronic device and method for manufacturing electronic device
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
TW200910526A (en) 2007-07-03 2009-03-01 Renesas Tech Corp Method of manufacturing semiconductor device
JP2009260004A (en) 2008-04-16 2009-11-05 Renesas Technology Corp Method of manufacturing semiconductor device
JP5430846B2 (en) 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5415713B2 (en) 2008-05-23 2014-02-12 株式会社半導体エネルギー研究所 Semiconductor device
JP4623179B2 (en) * 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and manufacturing method thereof
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
JP2010205987A (en) 2009-03-04 2010-09-16 Sony Corp Thin film transistor, method for manufacturing the same, and display
JP5760298B2 (en) * 2009-05-21 2015-08-05 ソニー株式会社 Thin film transistor, display device, and electronic device
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5663231B2 (en) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 Light emitting device
KR101877149B1 (en) * 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
CN104282691B (en) 2009-10-30 2018-05-18 株式会社半导体能源研究所 Semiconductor device
KR101928723B1 (en) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102026603B1 (en) 2010-02-05 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN107195686B (en) 2010-07-02 2021-02-09 株式会社半导体能源研究所 Semiconductor device with a plurality of semiconductor chips
JP5784479B2 (en) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 Semiconductor device
TWI657580B (en) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100148171A1 (en) * 2008-12-15 2010-06-17 Nec Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
US20110089417A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011074408A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
US20110147737A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) * 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BRENT KEETH: "Chapter 2: The DRAM Array", 2008, DRAM CIRCUIT DESIGN: FUNDAMENTAL AND HIGH-SPEED TOPICS,, PAGE(S) 33 - 64, XP009190137 *

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