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EP2568024A1 - Composition pour polissage mécanique chimique comportant un glycoside - Google Patents

Composition pour polissage mécanique chimique comportant un glycoside Download PDF

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Publication number
EP2568024A1
EP2568024A1 EP11180449A EP11180449A EP2568024A1 EP 2568024 A1 EP2568024 A1 EP 2568024A1 EP 11180449 A EP11180449 A EP 11180449A EP 11180449 A EP11180449 A EP 11180449A EP 2568024 A1 EP2568024 A1 EP 2568024A1
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EP
European Patent Office
Prior art keywords
alkyl
glycoside
aryl
alkylaryl
cmp
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EP11180449A
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German (de)
English (en)
Inventor
Yuzhuo Li
Michael Lauter
Roland Lange
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BASF SE
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BASF SE
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Publication date
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Priority to EP11180449A priority Critical patent/EP2568024A1/fr
Publication of EP2568024A1 publication Critical patent/EP2568024A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • This invention essentially relates to a chemical mechanical polishing (CMP) composition and its use in polishing substrates of the semiconductor industry.
  • the CMP composition according to the invention comprises a specific glycoside and shows an improved polishing performance.
  • CMP chemical mechanical polishing
  • CMP is employed to planarize metal and/or oxide surfaces.
  • CMP utilizes the interplay of chemical and mechanical action to achieve the planarity of the to-be-polished surfaces.
  • Chemical action is provided by a chemical composition, also referred to as CMP composition or CMP slurry.
  • Mechanical action is usually carried out by a polishing pad which is typically pressed onto the to-be-polished surface and mounted on a moving platen. The movement of the platen is usually linear, rotational or orbital.
  • a rotating wafer holder brings the to-be-polished wafer in contact with a polishing pad.
  • the CMP composition is usually applied between the to-be-polished wafer and the polishing pad.
  • CMP compositions comprising a glycoside in general are known and described, for instance, in the following references.
  • US 6 616 514 discloses a CMP slurry comprising (a) an abrasive, (b) an aqueous medium, and (c) a further specified organic polyol that does not dissociate protons.
  • examples of such polyols include mannitol, sorbitol, mannose, xylitol, sorbose, sucrose, and dextrin.
  • US 6 866 793 discloses a CMP slurry comprising (a) bulk solution, (b) plurality of particles, and (c) at least one selective adsorption additive which is further specified in a specific concentration, wherein this adsorption additive may comprise a non-ionic surfactant.
  • non-ionic surfactants include - inter alia - sugar alkylate and sugar ester.
  • US 6 974 777 discloses a method of polishing a substrate comprising:
  • US 7 071 105 discloses a CMP system comprising (a) ceria, (b) a specific polishing additive bearing a functional group with a pK a of about 4 to about 9, and (c) a liquid carrier, wherein the polishing system has a pH of about 7 or less and does not contain a significant amount of cross-linked polymer abrasive particles that are electrostatically associated with the inorganic abrasive.
  • This CM P system may optionally further comprise a surfactant, and suitable non-ionic surfactants are for example sorbitan C 6-30 alkyl acid esters or polyoxyethylenesorbitan C 6-30 alkyl acid esters.
  • One of the objects of the present invention was to provide a CMP composition appropriate for the CMP of surfaces of dielectric substrates and/or showing an improved polishing performance, particularly the combination of high material removal rate (M RR) of silicon dioxide and low M RR of silicon nitride or polysilicon. Furthermore, A CM P composition was sought that would result in a high step height reduction (SHR) and would be ready-to-use.
  • SHR step height reduction
  • CM P composition which comprises
  • a semiconductor device can be manufactured by a process which comprises the CM P of a substrate in the presence of the CMP composition of the invention.
  • said process comprises the CM P of a dielectric substrate, that is a substrate having a dielectric constant of less than 6.
  • Said process comprises more preferably the CM P of a substrate comprising silicon dioxide, most preferably the CMP of a substrate comprising silicon dioxide and silicon nitride or polysilicon, particularly the CMP of a silicon dioxide layer of a substrate which is a shallow trench isolation (STI) device or a part thereof, for example the CMP of a silicon dioxide layer of a substrate comprising silicon dioxide and silicon nitride or polysilicon.
  • STI shallow trench isolation
  • the selectivity of silicon dioxide to silicon nitride with regard to the material removal rate is preferably higher than 15:1, more preferably higher than 25:1, most preferably higher than 35:1, for example higher than 50:1.
  • This selectivity can be adjusted by the type and concentration of glycoside (B) and by setting other parameters such as pH value.
  • the selectivity of silicon dioxide to polysilicon with regard to the material removal rate is preferably higher than 15:1, more preferably higher than 25:1, most preferably higher than 35:1, for example higher than 50:1.
  • This selectivity can be adjusted by the type and concentration of glycoside (B) and by setting other parameters such as pH value.
  • the CMP composition of the invention is used for polishing any substrate used in the semiconductor industry.
  • Said CMP composition is used preferably for polishing a dielectric substrate, that is a substrate having a dielectric constant of less than 6, more preferably for polishing a substrate comprising silicon dioxide, most preferably for polishing a substrate comprising silicon dioxide and silicon nitride or polysilicon, particularly for polishing a silicon dioxide layer of a substrate which is a shallow trench isolation (STI) device or a part thereof, and for example for polishing a silicon dioxide layer of a substrate comprising silicon dioxide and silicon nitride or polysilicon.
  • STI shallow trench isolation
  • the selectivity of silicon dioxide to silicon nitride with regard to the material removal rate is preferably higher than 15:1, more preferably higher than 25:1, most preferably higher than 35:1, for example higher than 50:1.
  • the selectivity of silicon dioxide to polysilicon with regard to the material removal rate is preferably higher than 15:1, more preferably higher than 25:1, most preferably higher than 35:1, for example higher than 50:1.
  • the CMP composition contains inorganic particles, organic particles, or a mixture or composite thereof (A).
  • (A) can be
  • a composite is a composite particle comprising two or more types of particles in such a way that they are mechanically, chemically or in another way bound to each other.
  • An example for a composite is a core-shell particle comprising one type of particle in the outer sphere (shell) and another type of particle in the inner sphere (core).
  • a core-shell particle comprising a SiO 2 core and a CeO 2 shell is preferred, and particularly, a raspberry-type coated particle comprising a SiO 2 core with a mean core size of from 20 to 200 nm wherein the core is coated with CeO2 particles having a mean particle size below 10 nm is preferred.
  • the particle sizes are determined using laser diffraction techniques and dynamic light scattering techniques.
  • the particles (A) can be contained in varying amounts.
  • the amount of (A) is not more than 10% by weight (referred to as "wt.%” in the following), more preferably not more than 5 wt.%, most preferably not more than 2 wt.%, for example not more than 0.75 wt.%, based on the total weight of the corresponding composition.
  • the amount of (A) is at least 0.005 wt.%, more preferably at least 0.01 wt.%, most preferably at least 0.05 wt.%, for example at least 0.1 wt.%, based on the total weight of the corresponding composition.
  • the particles (A) can be contained in varying particle size distributions.
  • the particle size distributions of the particles (A) can be monomodal or multimodal. In case of multimodal particle size distributions, bimodal is often preferred. In order to have an easily reproducible property profile and easily reproducible conditions during the CMP process of the invention, a monomodal particle size distribution is preferred for (A). It is most preferred for (A) to have a monomodal particle size distribution.
  • the mean particle size of the particles (A) can vary within a wide range.
  • the mean particle size is the d 50 value of the particle size distribution of (A) in the aqueous medium (C) and can be determined using dynamic light scattering techniques. Then, the d 50 values are calculated under the assumption that particles are essentially spherical.
  • the width of the mean particle size distribution is the distance (given in units of the x-axis) between the two intersection points, where the particle size distribution curve crosses the 50% height of the relative particle counts, wherein the height of the maximal particle counts is standardized as 100% height.
  • the mean particle size of the particles (A) is in the range of from 5 to 500 nm, more preferably in the range of from 5 to 250 nm, most preferably in the range of from 50 to 150 nm, and in particular in the range of from 80 to 130 nm, as measured with dynamic light scattering techniques using instruments such as High Performance Particle Sizer (HPPS) from Malvern Instruments, Ltd. or Horiba LB550.
  • HPPS High Performance Particle Sizer
  • the particles (A) can be of various shapes. Thereby, the particles (A) may be of one or essentially only one type of shape. However, it is also possible that the particles (A) have different shapes. For instance, two types of differently shaped particles (A) may be present.
  • (A) can have the shape of cubes, cubes with chamfered edges, octahedrons, icosahedrons, nodules or spheres with or without protrusions or indentations. Preferably, they are spherical with no or only very few protrusions or indentations.
  • particles (A) is not particularly limited.
  • (A) may be of the same chemical nature or a mixture or composite of particles of different chemical nature.
  • particles (A) of the same chemical nature are preferred.
  • (A) can be
  • Particles (A) are preferably inorganic particles. Among them, oxides and carbides of metals or metalloids are preferred. More preferably, particles (A) are alumina, ceria, copper oxide, iron oxide, nickel oxide, manganese oxide, silica, silicon nitride, silicon carbide, tin oxide, titania, titanium carbide, tungsten oxide, yttrium oxide, zirconia, or mixtures or composites thereof. Most preferably, particles (A) are alumina, ceria, silica, titania, zirconia, or mixtures or composites thereof. In particular, (A) are ceria. For example, (A) are colloidal ceria. Typically, colloidal ceria are produced by a wet precipitation process.
  • polymer particles are preferred.
  • Polymer particles can be homo- or copolymers. The latter may for example be block-copolymers, or statistical copolymers.
  • the homo-or copolymers may have various structures, for instance linear, branched, comb-like, den-drimeric, entangled or cross-linked.
  • the polymer particles may be obtained according to the anionic, cationic, controlled radical, free radical mechanism and by the process of suspension or emulsion polymerisation.
  • the polymer particles are at least one of the polystyrenes, polyesters, alkyd resins, polyurethanes, polylactones, polycarbonates, poylacrylates, polymethacrylates, polyethers, poly(N-alkylacrylamide)s, poly(methyl vinyl ether)s, or copolymers comprising at least one of vinylaromatic compounds, acrylates, methacrylates, maleic anhydride acrylamides, methacrylamides, acrylic acid, or methacrylic acid as monomeric units, or mixtures or composites thereof.
  • polymer particles with a cross-linked structure are preferred.
  • the CMP composition comprises
  • R 1 is alkyl, aryl, or alkylaryl
  • R 2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl
  • R 3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl
  • R 4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl
  • R 5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl
  • the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20.
  • the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is referred to as "monosaccharide-number" in the following.
  • the monosaccharide-number can vary within the range of from 1 to 20, and is preferably in the range of from 1 to 15, more preferably in the range of from 1 to 10, most preferably in the range of from 1 to 5, for example in the range of from 1 to 3.
  • (B) is a glycoside of the formulae 1 to 5. More preferably, (B) is a glycoside of the formulae 1 to 4. Most preferably, (B) is a glycoside of the formulae 1 to 3. Particularly preferably, (B) is a glycoside of the formulae 1 to 2. Particularly, (B) is a glycoside of formula 1.
  • (B) is a glycoside of formula 1a wherein R 1 is alkyl, aryl or alkylaryl, R 12 is H, alkyl, aryl or alkylaryl, R 13 is H, alkyl, aryl or alkylaryl, R 14 is H, alkyl, aryl or alkylaryl, R 15 is H, alkyl, aryl or alkylaryl, k is an integer from 1 to 20.
  • R 1 can generally be any substituted or unsubstituted alkyl, aryl or alkylaryl group.
  • R 1 is wherein R 16 is H, alkyl, aryl or alkylaryl, and preferably alkyl, R 17 is H, alkyl, aryl or alkylaryl, and preferably alkyl.
  • R 1 is CH 2 R 18 , wherein R 18 is H, alkyl, aryl or alkylaryl, and preferably alkyl.
  • R 1 can generally be any substituted or unsubstituted alkyl, aryl or alkylaryl group having various numbers of carbon atoms.
  • R 1 is C 1 -C 30 alkyl, C 1 -C 30 alkylaryl, or C 1 -C 30 aryl, more preferably R 1 is a C 1 -C 30 alkyl, most preferably, R 1 is a C 7 -C 17 alkyl, particularly, R 1 is an unsubstituted C 10 -C 16 alkyl, for example, R 1 is an unsubstituted C 12 -C 14 alkyl.
  • R 12 can generally be H or any substituted or unsubstituted alkyl, aryl or alkylaryl group.
  • R 12 is preferably H or alkyl, more preferably H or unsubstituted alkyl, and most preferably H.
  • R 13 can generally be H or any substituted or unsubstituted alkyl, aryl or alkylaryl group.
  • R 13 is preferably H or alkyl, more preferably H or unsubstituted alkyl, and most preferably H.
  • R 14 can generally be H or any substituted or unsubstituted alkyl, aryl or alkylaryl group.
  • R 14 is preferably H or alkyl, more preferably H or unsubstituted alkyl, and most preferably H.
  • R 15 can generally be H or any substituted or unsubstituted alkyl, aryl or alkylaryl group.
  • R 15 is preferably H or alkyl, more preferably H or unsubstituted alkyl, and most preferably H.
  • k is an integer from 1 to 20, preferably from 1 to 15, more preferably from 1 to 10, most preferably from 1 to 5, for example from 1 to 3.
  • the glycoside (B) can be of one type or a mixture of different types of glycosides of the formulae 1 to 6.
  • (B) is one type of glycoside of the formulae 1 to 6.
  • (B) is a glycoside of the formulae 1 to 6, wherein R 2 , R 3 , R 4 and R 5 is - independently from each other - H, X1, X2, X3, X4, X5, or X6.
  • (B) is a glycoside of formula 1 wherein R 2 is H or X1, R 3 is H or X1, R 4 is H or X1, R 5 is H or X1.
  • (B) is a glycoside of formula 1a wherein R 12 , R 13 , R 14 and R 15 is H and wherein R 1 is wherein R 16 is H, alkyl, aryl or alkylaryl, R 17 is H, alkyl, aryl or alkylaryl.
  • (B) is a glycoside of the formulae 1 a wherein R 12 , R 13 , R 14 and R 15 is H and wherein R 1 is CH 2 R 18 , wherein R 18 is H, alkyl, aryl or alkylaryl.
  • the glycoside (B) is a glucoside, galactoside or mannoside. More preferably, (B) is a glucoside or galactoside. Most preferably, (B) is a glucoside. For example, (B) is a D-glucoside.
  • (B) is a glycoside of the formula 1, wherein R 1 is alkyl, aryl, or alkylaryl, R 2 is H or X1, R 3 is H or X1, R 4 is H or X1, R 5 is H or X1, and wherein the monosaccharide-number is within the range of from 1 to 10, more preferably from 1 to 5, most preferably from 1 to 3.
  • (B) is a glycoside of the formula 1, wherein R 1 is alkyl, R 2 is H or X1, R 3 is H or X1, R 4 is H or X1, R 5 is H or X1, and wherein the monosaccharide-number is within the range of from 1 to 10, more preferably from 1 to 5, most preferably from 1 to 3.
  • the glycoside (B) can be contained in varying amounts.
  • the amount of (B) is not more than 10 wt.%, more preferably not more than 5 wt.%, most preferably not more than 2 wt.%, for example not more than 1 wt.%, based on the total weight of the corresponding composition.
  • the amount of (B) is at least 0.001 wt.%, more preferably at least 0.005 wt.%, most preferably at least 0.01 wt.%, for example at least 0.05 wt.%, based on the total weight of the corresponding composition.
  • the solubility of the glycoside of the formulae 1 to 6 (B) in an aqueous medium can vary within a wide range.
  • the solubility of (B) in water at pH 7 at 25 °C under atmospheric pressure is preferably at least 1 g/L, more preferably at least 10 g/L, most preferably at least 70 g/L, particularly at least 200 g/L, for example at least 350 g/L.
  • Said solubility can be determined by evaporating the solvent and measuring the remaining mass in the saturated solution.
  • (B) is preferably a glycoside of formula 2, more preferably a psicoside, a sorboside, a tagatoside, or a fructoside, most preferably a fructoside, for example a D-fructoside.
  • (B) is preferably a glycoside of formula 3, more preferably a psicoside, a sorboside, a tagatoside, or a fructoside, most preferably a fructoside, for example a D-fructoside
  • (B) is preferably a glycoside of formula 4, more preferably a arabinoside, a lyxoside, a riboside, or a xyloside, most preferably a riboside, for example a D-riboside.
  • (B) is preferably a glycoside of formula 5, more preferably a ribuloside or a xyluloside, most preferably a ribuloside, for example a D-ribuloside.
  • (B) is preferably a glycoside of formula 6, more preferably a arabinoside, a lyxoside, a riboside, or a xyloside, most preferably a riboside, for example a D-riboside.
  • the CMP composition contains an aqueous medium (C).
  • (C) can be of one type or a mixture of different types of aqueous media.
  • the aqueous medium (C) can be any medium which contains water.
  • the aqueous medium (C) is a mixture of water and an organic solvent miscible with water (e.g. an alcohol, preferably a C 1 to C 3 alcohol, or an alkylene glycol derivative). More preferably, the aqueous medium (C) is water. Most preferably, aqueous medium (C) is de-ionized water.
  • the amount of (C) is (100-x) % by weight of the CM P composition.
  • the CMP composition of the invention can further optionally contain at least one corrosion inhibitor (D), for example two corrosion inhibitors.
  • Preferred corrosion inhibitors are diazoles, triazoles, tetrazoles and their derivatives, for example benzotriazole or tolyltriazole.
  • Other examples for preferred corrosion inhibitors are acetylene alcohols, or a salt or an adduct of an amine and a carboxylic acid comprising an amide moiety.
  • the corrosion inhibitor (D) can be contained in varying amounts.
  • the amount of (D) is not more than 10 wt.%, more preferably not more than 5 wt.%, most preferably not more than 2.5 wt.%, for example not more than 1.5 wt.%, based on the total weight of the corresponding composition.
  • the amount of (D) is at least 0.01 wt.%, more preferably at least 0.1 wt.%, most preferably at least 0.3 wt.%, for example at least 0.8 wt.%, based on the total weight of the corresponding composition.
  • the CMP composition of the invention can further optionally contain at least one oxidizing agent (E), for example one oxidizing agent.
  • the oxidizing agent is a compound which is capable of oxidizing the to-be-polished substrate or one of its layers.
  • (E) is a per-type oxidizer. More preferably, (E) is a peroxide, persulfate, perchlorate, perbromate, periodate, permanganate, or a derivative thereof. Most preferably, (E) is a peroxide or persulfate. Particularly, (E) is a peroxide.
  • (E) is hydrogen peroxide.
  • the oxidizing agent (E) can be contained in varying amounts.
  • the amount of (E) is not more than 20 wt.%, more preferably not more than 10 wt.%, most preferably not more than 5 wt.%, for example not more than 2 wt.%, based on the total weight of the corresponding composition.
  • the amount of (E) is at least 0.05 wt.%, more preferably at least 0.1 wt.%, most preferably at least 0.5 wt.%, for example at least 1 wt.%, based on the total weight of the corresponding composition.
  • the CMP composition of the invention can further optionally contain at least one complexing agent (F), for example one complexing agent.
  • the complexing agent is a compound which is capable of complexing the ions of the to-be-polished substrate or of one of its layers.
  • (F) is a carboxylic acid having at least two COOH groups, an N -containing carboxylic acid, N -containing sulfonic acid, N -containing sulfuric acid, N -containing phosphonic acid, N- containing phosphoric acid, or a salt thereof.
  • (F) is a carboxylic acid having at least two COOH groups, an N -containing carboxylic acid, or a salt thereof.
  • (F) is an amino acid, or a salt thereof.
  • (F) is glycine, serine, alanine, hystidine, or a salt thereof.
  • the complexing agent (F) can be contained in varying amounts.
  • the amount of (F) is not more than 20 wt.%, more preferably not more than 10 wt.%, most preferably not more than 5 wt.%, for example not more than 2 wt.%, based on the total weight of the corresponding composition.
  • the amount of (F) is at least 0.05 wt.%, more preferably at least 0.1 wt.%, most preferably at least 0.5 wt.%, for example at least 1 wt.%, based on the total weight of the corresponding composition.
  • the CMP composition of the invention can further optionally contain at least one biocide (G), for example one biocide.
  • the biocide is a compound which deters, renders harmless, or exerts a controlling effect on any harmful organism by chemical or biological means.
  • (G) is an quaternary ammonium compound, an isothiazolinone-based compound, an N- substituted diazenium dioxide, or an N '-hydroxy-diazenium oxide salt. More preferably, (G) is an N -substituted diazenium dioxide, or an N '-hydroxy-diazenium oxide salt.
  • the biocide (G) can be contained in varying amounts. If present, the amount of (G) is preferably not more than 0.5 wt.%, more preferably not more than 0.1 wt.%, most preferably not more than 0.05 wt.%, particularly not more than 0.02 wt.%, for example not more than 0.008 wt.%, based on the total weight of the corresponding composition.
  • the amount of (G) is preferably at least 0.0001 wt.%, more preferably at least 0.0005 wt.%, most preferably at least 0.001 wt.%, particularly at least 0.003 wt.%, for example at least 0.006 wt.%, based on the total weight of the corresponding composition.
  • the properties of the CMP compositions used or according to the invention respectively may depend on the pH of the corresponding composition.
  • the pH value of the compositions used or according to the invention respectively is in the range of from 3 to 9, more preferably from 4 to 9, and most preferably from 5 to 8.5, for example from 7 to 8.5.
  • the CMP compositions according to the invention respectively may also contain, if necessary, various other additives, including but not limited to pH adjusting agents, stabilizers, surfactants etc.
  • Said other additives are for instance those commonly employed in CMP compositions and thus known to the person skilled in the art. Such addition can for example stabilize the dispersion, or improve the polishing performance, or the selectivity between different layers.
  • said additive can be contained in varying amounts.
  • the amount of said additive is not more than 10 wt.%, more preferably not more than 1 wt.%, most preferably not more than 0.1 wt.%, for example not more than 0.01 wt.%, based on the total weight of the corresponding composition.
  • the amount of said additive is at least 0.0001 wt.%, more preferably at least 0.001 wt.%, most preferably at least 0.01 wt.%, for example at least 0.1 wt.%, based on the total weight of the corresponding composition.
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • the CMP composition of the invention comprises:
  • Processes for preparing CMP compositions are generally known. These processes may be applied to the preparation of the CMP composition of the invention. This can be carried out by dispersing or dissolving the above-described components (A) and (B) in the aqueous medium (C), preferably water, and optionally by adjusting the pH value through adding an acid, a base, a buffer or an pH adjusting agent.
  • the customary and standard mixing processes and mixing apparatuses such as agitated vessels, high shear impellers, ultrasonic mixers, homogenizer nozzles or counterflow mixers, can be used.
  • the CMP composition of the invention is preferably prepared by dispersing the particles (A), dispersing and/or dissolving a glycoside (B) and optionally further additives in the aqueous medium (C).
  • the polishing process is generally known and can be carried out with the processes and the equipment under the conditions customarily used for the CMP in the fabrication of wafers with integrated circuits. There is no restriction on the equipment with which the polishing process can be carried out.
  • CM P process typically consists of a rotating platen which is covered with a polishing pad. Also orbital polishers have been used. The wafer is mounted on a carrier or chuck. The side of the wafer being processed is facing the polishing pad (single side polishing process). A retaining ring secures the wafer in the horizontal position.
  • the larger diameter platen is also generally horizontally positioned and presents a surface parallel to that of the wafer to be polished.
  • the polishing pad on the platen contacts the wafer surface during the planarization process.
  • the wafer is pressed onto the polishing pad.
  • Both the carrier and the platen are usually caused to rotate around their respective shafts extending perpendicular from the carrier and the platen.
  • the rotating carrier shaft may remain fixed in position relative to the rotating platen or may oscillate horizontally relative to the platen.
  • the direction of rotation of the carrier is typically, though not necessarily, the same as that of the platen.
  • the speeds of rotation for the carrier and the platen are generally, though not necessarily, set at different values.
  • the CMP composition of the invention is usually applied onto the polishing pad as a continuous stream or in dropwise fashion. Customarily, the temperature of the platen is set at temperatures of from 10 to 70 °C.
  • the load on the wafer can be applied by a flat plate made of steel for example, covered with a soft pad that is often called backing film. If more advanced equipment is being used a flexible membrane that is loaded with air or nitrogen pressure presses the wafer onto the pad. Such a membrane carrier is preferred for low down force processes when a hard polishing pad is used, because the down pressure distribution on the wafer is more uniform compared to that of a carrier with a hard platen design. Carriers with the option to control the pressure distribution on the wafer may also be used according to the invention. They are usually designed with a number of different chambers that can be loaded to a certain degree independently from each other.
  • CM P process of the invention and/or using the CM P composition of the invention, wafers with integrated circuits comprising a dielectric layer can be obtained which have an excellent functionality.
  • the CMP composition of the invention can be used in the CMP process as ready-to-use slurry, they have a long shelf-life and show a stable particle size distribution over long time. Thus, they are easy to handle and to store. They show an excellent polishing performance, particularly with regard to the combination of high material removal rate (M RR) of silicon dioxide and low M RR of silicon nitride or polysilicon. Since the amounts of its components are held down to a minimum, the CMP composition according to the invention respectively can be used in a cost-effective way.
  • M RR material removal rate
  • Strasbaugh nSpire (Model 6EC), ViPRR floating retaining ring Carrier; down pressure: 3.0 psi (210 mbar); back side pressure: 0.5 psi (34.5 mbar); retaining ring pressure: 2.5 psi (172 mbar); polishing table / carrier speed: 95 / 85 rpm; slurry flow rate: 200 ml / min; polishing time: 60 s; pad conditioning: in situ, 6.0 Ibs (27 N); polishing pad: IC1000 A2 on Suba 4 stacked pad, xy k or k grooved (R&H); backing film: Strasbaugh, DF200 (136 holes); conditioning disk: 3M S60;
  • the pad is conditioned by three sweeps, before a new type of slurry is used for CM P.
  • the slurry is stirred in the local supply station.
  • the removal is determined by optical film thickness measurement using Filmmetrics F50. 49 points diameter scans (5 mm edge exclusion) are measured pre and post CMP for each wafer. For each point on the wafer that was measured with F50 the film thickness loss is calculated from the difference of the film thickness pre and post CMP The average of the resulting data from the 49 point diameter scans gives the total removal, the standard deviation gives the (non-) uniformity.
  • the removal rate the quotient of the total material removal and the time of the main polishing step is used.
  • Standard films used for CMP experiments SiO 2 films: PE TEOS; Si 3 N 4 films: PE CVD; Poly Si films: CVD;
  • pH is adjusted by adding of aqueous ammonia solution (0.1 %) or HNO 3 (0.1 %) to the slurry.
  • the pH value is measured with a pH combination electrode (Schott, blue line 22 pH).
  • Colloidal ceria particles having a mean primary particle size of 60 nm (as determined using BET surface area measurements) and having a mean secondary particle size (d50 value) of 99 nm (as determined using dynamic light scattering techniques via a Horiba instrument) were used.

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  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2826827A1 (fr) * 2013-07-18 2015-01-21 Basf Se Composition CMP comprenant des particules abrasives à cérium

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0414128A1 (fr) * 1989-08-25 1991-02-27 Henkel KGaA Dentifrice inhibiteur de plaque dentaire
US6616514B1 (en) 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
WO2004063301A1 (fr) 2003-01-03 2004-07-29 Air Products And Chemicals, Inc. Composition et procede utilises pour la planarisation chimique et mecanique de metaux
US6866793B2 (en) 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
EP1518910A1 (fr) * 2003-09-17 2005-03-30 Rohm and Haas Electronic Materials CMP Holdings, Inc. Composition de polissage pour plaquettes semiconductrices
US6974777B2 (en) 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0414128A1 (fr) * 1989-08-25 1991-02-27 Henkel KGaA Dentifrice inhibiteur de plaque dentaire
US6616514B1 (en) 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
US6974777B2 (en) 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US6866793B2 (en) 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
WO2004063301A1 (fr) 2003-01-03 2004-07-29 Air Products And Chemicals, Inc. Composition et procede utilises pour la planarisation chimique et mecanique de metaux
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
EP1518910A1 (fr) * 2003-09-17 2005-03-30 Rohm and Haas Electronic Materials CMP Holdings, Inc. Composition de polissage pour plaquettes semiconductrices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2826827A1 (fr) * 2013-07-18 2015-01-21 Basf Se Composition CMP comprenant des particules abrasives à cérium
CN105555889A (zh) * 2013-07-18 2016-05-04 巴斯夫欧洲公司 包含含氧化铈磨料粒子的cmp组合物
JP2016529356A (ja) * 2013-07-18 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ セリアを含有する研磨粒子を含むｃｍｐ組成物
CN105555889B (zh) * 2013-07-18 2018-11-27 巴斯夫欧洲公司 包含含氧化铈磨料粒子的cmp组合物

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