EP2425468A4 - MONOLITHIC FBAR-CMOS STRUCTURE SUCH AS FOR MASS DETECTION - Google Patents
MONOLITHIC FBAR-CMOS STRUCTURE SUCH AS FOR MASS DETECTIONInfo
- Publication number
- EP2425468A4 EP2425468A4 EP10770334.0A EP10770334A EP2425468A4 EP 2425468 A4 EP2425468 A4 EP 2425468A4 EP 10770334 A EP10770334 A EP 10770334A EP 2425468 A4 EP2425468 A4 EP 2425468A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- cmos structure
- mass detection
- fbar
- monolithic
- monolithic fbar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000105 evaporative light scattering detection Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0426—Bulk waves, e.g. quartz crystal microbalance, torsional waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Landscapes
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Acoustics & Sound (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17386609P | 2009-04-29 | 2009-04-29 | |
| US21561109P | 2009-05-07 | 2009-05-07 | |
| PCT/US2010/032976 WO2010127122A1 (en) | 2009-04-29 | 2010-04-29 | Monolithic fbar-cmos structure such as for mass sensing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2425468A1 EP2425468A1 (en) | 2012-03-07 |
| EP2425468A4 true EP2425468A4 (en) | 2014-05-21 |
Family
ID=43032556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP10770334.0A Withdrawn EP2425468A4 (en) | 2009-04-29 | 2010-04-29 | MONOLITHIC FBAR-CMOS STRUCTURE SUCH AS FOR MASS DETECTION |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2425468A4 (en) |
| CN (1) | CN102414855B (en) |
| CA (1) | CA2760508A1 (en) |
| WO (1) | WO2010127122A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9255912B2 (en) | 2009-04-29 | 2016-02-09 | The Trustees Of Columbia University In The City Of New York | Monolithic FBAR-CMOS structure such as for mass sensing |
| WO2014062936A1 (en) | 2012-10-17 | 2014-04-24 | The Trustees Of Columbia University In The City Of New York | Cmos-integrated jfet for dense low-noise bioelectronic platforms |
| US10122345B2 (en) | 2013-06-26 | 2018-11-06 | The Trustees Of Columbia University In The City Of New York | Co-integrated bulk acoustic wave resonators |
| CN105866815B (en) * | 2016-05-06 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | A kind of FBAR gamma irradiation sensor of flexible structure |
| WO2018031055A1 (en) * | 2016-08-11 | 2018-02-15 | Qorvo Us, Inc. | Acoustic resonator device with controlled placement of functionalization material |
| GB2554400A (en) | 2016-09-26 | 2018-04-04 | Univ Warwick | Bulk acoustic wave resonator based sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030199105A1 (en) * | 2002-04-22 | 2003-10-23 | Kub Francis J. | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| US20060125489A1 (en) * | 2002-07-19 | 2006-06-15 | Hans-Dieter Feucht | Device and method for detecting a substance |
| US20060202779A1 (en) * | 2005-03-14 | 2006-09-14 | Fazzio R S | Monolithic vertical integration of an acoustic resonator and electronic circuitry |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2271179A1 (en) * | 1999-05-05 | 2000-11-05 | Sensorchem International Corporation | Process for monitoring and detecting small molecule - biomolecule interactions |
| KR100865652B1 (en) * | 2001-05-11 | 2008-10-29 | 우베 고산 가부시키가이샤 | Piezoelectric Thin Film Resonators |
| JP3939939B2 (en) * | 2001-07-17 | 2007-07-04 | 富士通株式会社 | Method for manufacturing piezoelectric thin film resonant element |
| JP3949990B2 (en) * | 2002-03-29 | 2007-07-25 | 株式会社東芝 | Voltage controlled oscillator |
| CN100567972C (en) * | 2003-10-08 | 2009-12-09 | 皇家飞利浦电子股份有限公司 | Bulk Acoustic Wave Sensor |
| EP1528677B1 (en) * | 2003-10-30 | 2006-05-10 | Agilent Technologies, Inc. | Film acoustically-coupled transformer with two reverse c-axis piezoelectric elements |
| US7323805B2 (en) * | 2004-01-28 | 2008-01-29 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
| US7138889B2 (en) * | 2005-03-22 | 2006-11-21 | Triquint Semiconductor, Inc. | Single-port multi-resonator acoustic resonator device |
| EP1959568A1 (en) * | 2007-02-19 | 2008-08-20 | Consejo Superior de Investigaciones Cientificas | Thin-film bulk acoustic ware resonator and method for performing heterogeneous integration of the same with complementary-metal-oxide-semiconductor integrated circuit |
| CN101246162A (en) * | 2008-03-12 | 2008-08-20 | 浙江大学 | Antibody Detection Biochip Using Piezoelectric Thin Film Bulk Acoustic Wave Device |
-
2010
- 2010-04-29 EP EP10770334.0A patent/EP2425468A4/en not_active Withdrawn
- 2010-04-29 CA CA2760508A patent/CA2760508A1/en not_active Abandoned
- 2010-04-29 CN CN201080018971.9A patent/CN102414855B/en not_active Expired - Fee Related
- 2010-04-29 WO PCT/US2010/032976 patent/WO2010127122A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030199105A1 (en) * | 2002-04-22 | 2003-10-23 | Kub Francis J. | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| US20060125489A1 (en) * | 2002-07-19 | 2006-06-15 | Hans-Dieter Feucht | Device and method for detecting a substance |
| US20060202779A1 (en) * | 2005-03-14 | 2006-09-14 | Fazzio R S | Monolithic vertical integration of an acoustic resonator and electronic circuitry |
Non-Patent Citations (2)
| Title |
|---|
| BREDERLOW R ET AL: "Biochemical sensors based on bulk acoustic wave resonators", INTERNATIONAL ELECTRON DEVICES MEETING 2003. IEDM. TECHNICAL DIGEST. WASHINGTON, DC, DEC 8 - 10, 2003; [INTERNATIONAL ELECTRON DEVICES MEETING], NEW YORK, NY : IEEE, US, 8 December 2003 (2003-12-08), pages 992 - 994, XP010684243, ISBN: 978-0-7803-7872-8 * |
| See also references of WO2010127122A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102414855B (en) | 2015-02-11 |
| CA2760508A1 (en) | 2010-11-04 |
| WO2010127122A1 (en) | 2010-11-04 |
| EP2425468A1 (en) | 2012-03-07 |
| CN102414855A (en) | 2012-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20111102 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20140424 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 47/00 20060101AFI20140416BHEP |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20141125 |