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EP2411781A1 - Pressure sensor - Google Patents

Pressure sensor

Info

Publication number
EP2411781A1
EP2411781A1 EP10711204A EP10711204A EP2411781A1 EP 2411781 A1 EP2411781 A1 EP 2411781A1 EP 10711204 A EP10711204 A EP 10711204A EP 10711204 A EP10711204 A EP 10711204A EP 2411781 A1 EP2411781 A1 EP 2411781A1
Authority
EP
European Patent Office
Prior art keywords
pressure sensor
mounting surface
membrane
pressure
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP10711204A
Other languages
German (de)
French (fr)
Inventor
Michael Philipps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Endress and Hauser SE and Co KG
Original Assignee
Endress and Hauser SE and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endress and Hauser SE and Co KG filed Critical Endress and Hauser SE and Co KG
Publication of EP2411781A1 publication Critical patent/EP2411781A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Definitions

  • the present invention relates to a pressure sensor, in particular a pressure sensor with a monocrystalline membrane body, which has a measuring membrane and a measuring membrane surrounding edge region, and a monocrystalline substrate body, wherein the membrane body along a mounting surface of the edge region is fixedly connected to the substrate body.
  • pressure sensors are manufactured and distributed by the applicant, for example, in differential pressure transmitters under the name "Deltabar” and in pressure transmitters, which have a hydraulic pressure transmitter, under the name "Cerabar”.
  • the membrane body and the substrate body in particular have monocrystalline silicon as the basis for material, wherein the mounting surfaces to be joined together have normal, which are each given by the same main crystal axis, for example, a ⁇ 100> axis.
  • the substrate body and the membrane body are joined together by a eutectic compound containing an intermediate layer of gold necessary to form the eutectic.
  • the described procedure and the generic pressure sensors provide satisfactory measurement results, there are, nevertheless, effects between the substrate body and the membrane body, which can occur due to the anisotropy of the mechanical and electrical material parameters.
  • the Young's modulus of silicon is 130 GPa in the 100 direction, 169 GPa in the ⁇ 1 10> direction, and 188 GPa in the ⁇ 1 1 1> direction.
  • the pressure sensor according to the invention for example a semiconductor pressure sensor, comprises a monocrystalline membrane body which has a measuring diaphragm and an edge region surrounding the measuring diaphragm, wherein the
  • Edge region has a greater material thickness than the measuring diaphragm, and wherein the edge region has a first mounting surface, the surfaces of which is given normally by a first main crystal axis; and a monocrystalline substrate body having the same semiconductor material as the membrane body with respect to the crystal structure, the substrate body having a second mounting surface whose surface normal is parallel to the first main crystal axis, the membrane body being fixedly connected to the substrate body by joining the first mounting surface to the second mounting surface is, according to the invention, the orientations of other main crystal axes of membrane body and substrate body are each aligned parallel to each other.
  • the membrane body and the substrate body Si, SiC or sapphire.
  • the first main crystal axis is, for example for a Si, a ⁇ 100> or a ⁇ 11> axis.
  • first mounting surface and the second mounting surface are joined by means of a eutectic connection.
  • first mounting surface and the second mounting surface are joined by fusion bonding (English: fusion bonding), wherein the first mounting surface and the second mounting surface are joined in particular in the wafer assembly prior to the separation of the sensors (English: full wafer bonding).
  • the pressure sensor according to the invention comprises, according to one embodiment of the invention, a transducer for converting a pressure-dependent deformation of the measuring diaphragm into an electrical signal, wherein the transducer may in particular be a (piezo) resistive or a capacitive transducer.
  • the pressure sensor according to the invention may be an absolute pressure sensor, a relative pressure sensor or a differential pressure sensor, wherein an absolute pressure sensor measures a media pressure against vacuum, a relative pressure sensor measures a media pressure against atmospheric pressure, and a differential pressure sensor measures the difference between a first media pressure and a second media pressure.
  • Substrate body and membrane body is significantly reduced, and that on the other hand, the anisotropic material properties in the vicinity of the mounting surfaces no longer lead to the entry of inhomogeneous tension. As a result, the long-term stability and the measurement accuracy can be improved as a result.
  • a pressure sensor according to the invention comprises a pressure sensor according to the invention and a housing which has in its interior a sensor chamber in which the pressure sensor is arranged, and at least one hydraulic path extending from an outer surface of the housing into the sensor chamber around a surface of the Apply measuring membrane with a pressure to be measured.
  • an opening of the hydraulic path in the outer surface of the housing is covered with a separation membrane which is pressure-tightly connected to the outer surface of the housing along an edge, and wherein the volume of the hydraulic path enclosed between the separation membrane and the measurement membrane is filled with a transmission medium, such as a non-compressible liquid.
  • Fig. 1 a representation of the main crystal planes of a silicon crystal
  • FIG. 2 shows a perspective sectional view of a membrane body according to the invention and of a device according to the invention
  • Figure 1 shows the main crystal planes ⁇ 100 ⁇ , ⁇ 1 10 ⁇ and ⁇ 11 1 ⁇ of a silicon crystal and their orientation to each other.
  • a membrane body 1 comprises monocrystalline silicon. It has a measuring membrane 3, which runs in a ⁇ 100 ⁇ plane.
  • the measuring membrane is prepared by an etching process in a silicon crystal, ⁇ 1 1 1 ⁇ planes being formed by the etching process, which delimit an edge region 5 of the membrane body towards the measuring membrane 3.
  • Perpendicular to the surface of the measuring diaphragm 3 and perpendicular to the Mounting surfaces run, each perpendicular to each other, ⁇ 1 10 ⁇ planes, which limit the membrane body laterally.
  • the membrane body 1 is to be joined to a substrate body 10 which has a ⁇ 100 ⁇ plane 12 and, in parallel, a ⁇ 100 ⁇ plane 14, the latter serving as a second mounting surface.
  • the substrate body is also bounded laterally by ⁇ 110 ⁇ planes.
  • the membrane body 1 and the substrate body 10 are oriented in such a way to each other, that the first mounting surface is applied to the second mounting surface, and that the ⁇ 1 10 ⁇ - planes of the membrane body 1 and substrate body 10 each parallel to each other.
  • the membrane body 1 and the substrate body 10 are joined together by fusion bonding, and this is especially done in the wafer assembly before the pressure sensors are singulated by sawing the wafers along the ⁇ 1 10 ⁇ planes.
  • the wafers have corresponding orientation marks, which allow the described alignment of membrane body and substrate body to each other.
  • FIG. 3 shows a pressure measuring transducer according to the invention, in which a pressure sensor according to the invention, consisting of a membrane body 1 and a substrate body 10, which are joined together along the first mounting surface 7 and the second mounting surface 14, is arranged in a sensor housing 22 in a metal housing 20.
  • the pressure transducer shown is a Relativ umansauf choir, in which a measuring diaphragm 3 of the Hableitertiksensors via a capillary 24, which extends to a surface of the housing 20, acted upon by a pressure acting on a separation membrane 26 media pressure.
  • the measuring membrane 26 is connected to the surface of the housing 20 with a circumferential weld, the free volume of the sensor chamber 22 and the volume enclosed under the separation membrane being mixed with a transfer medium, e.g. a non-compressible liquid is filled.
  • a transfer medium e.g. a non-compressible liquid
  • the substrate body is fixed in the sensor chamber 22 on the back by means of a pressure-bearing joint, for example a bond 30, through which the channel 28 extends.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

A pressure sensor comprises a monocrystalline membrane body (1) which has a measuring membrane (3) and an edge region (5) that surrounds the measuring membrane, wherein the edge region has a greater material thickness than the measuring membrane (3), and wherein the edge region has a first mounting surface (7), the surface normal of which is given by a first main crystal axis; and a monocrystalline substrate body (10) which, in terms of the crystal structure, has the same semiconductor material as the membrane body (1), wherein the substrate body (10) has a second mounting surface (14), the surface normal of which runs parallel to the first main crystal axis, wherein the membrane body is permanently connected to the substrate body by joining the first mounting surface to the second mounting surface, characterized in that the orientations of other main crystal axes of the membrane body and of the substrate body are also each oriented parallel to one another.

Description

Drucksensor pressure sensor
Die vorliegende Erfindung betrifft einen Drucksensor, insbesondere einen Drucksensor mit einem einkristallinen Membrankörper, welcher eine Messmembran und ein Messmembran umgebenden Randbereich aufweist, und einen einkristallinen Substratkörper, wobei der Membrankörper entlang einer Montagefläche des Randbereichs mit dem Substratkörper fest verbunden ist. Derartige Drucksensoren werden von der Anmelderin beispielsweise in Differenzdruckmessumformer unter der Bezeichnung „Deltabar" und in Druckmessumformern, die einen hydraulischen Druckmittler aufweisen, unter der Bezeichnung „Cerabar" hergestellt und vertrieben.The present invention relates to a pressure sensor, in particular a pressure sensor with a monocrystalline membrane body, which has a measuring membrane and a measuring membrane surrounding edge region, and a monocrystalline substrate body, wherein the membrane body along a mounting surface of the edge region is fixedly connected to the substrate body. Such pressure sensors are manufactured and distributed by the applicant, for example, in differential pressure transmitters under the name "Deltabar" and in pressure transmitters, which have a hydraulic pressure transmitter, under the name "Cerabar".
Der Membrankörper und der Substratkörper weisen insbesondere einkristallines Silizium als Basis für Material auf, wobei die miteinander zu verbindenden Montageoberflächen Normale aufweisen, welche jeweils durch die gleiche Hauptkristallachse gegeben sind, beispielsweise, eine <100>-Achse. Der Substratkörper und der Membrankörper werden durch eine eutektische Verbindung miteinander gefügt, welche eine Zwischenschicht aus Gold beinhaltet, die zur Bildung des Eutektikums erforderlich ist.The membrane body and the substrate body in particular have monocrystalline silicon as the basis for material, wherein the mounting surfaces to be joined together have normal, which are each given by the same main crystal axis, for example, a <100> axis. The substrate body and the membrane body are joined together by a eutectic compound containing an intermediate layer of gold necessary to form the eutectic.
Alternativ hierzu ist eine Verbindung über so genanntes Fusionbonding möglich. Wenngleich die beschriebene Vorgehensweise und die gattungsgemäßen Drucksensoren zufrieden stellende Messergebnisse liefern, gibt es, dennoch Rückwirkungen zwischen dem Substratkörper und dem Membrankörper, die aufgrund der Einisotropie der mechanischen und elektrischen Materialparameter auftreten können. So ist Beispiel das Elastizitätsmodul von Silizium in 100 Richtung 130 GPa, in <1 10>-Richtung 169 GPa und in <1 1 1 >-Richtung 188 GPa.Alternatively, a connection via so-called fusion bonding is possible. Although the described procedure and the generic pressure sensors provide satisfactory measurement results, there are, nevertheless, effects between the substrate body and the membrane body, which can occur due to the anisotropy of the mechanical and electrical material parameters. For example, the Young's modulus of silicon is 130 GPa in the 100 direction, 169 GPa in the <1 10> direction, and 188 GPa in the <1 1 1> direction.
An der Grenzfläche zwischen den Montageflächen können aufgrund mangelnder lateraler Orientierung der Montageflächen zueinander trotz identischen Oberflächen normale erhebliche Sprünge in den richtungsabhängigen Kristalleigenschaften auftreten. Es ist daher die Aufgabe der vorliegenden Erfindung, einen Drucksensor bereitzustellen, welcher diese Nachteile überwindet.Due to a lack of lateral orientation of the mounting surfaces to each other at the interface between the mounting surfaces, despite identical surfaces, normal substantial jumps can occur in the direction-dependent ones Crystal properties occur. It is therefore the object of the present invention to provide a pressure sensor which overcomes these disadvantages.
Die Aufgabe wird erfindungsgemäß gelöst durch den Drucksensor gemäß dem unabhängigen Patentanspruch 1.The object is achieved by the pressure sensor according to independent claim 1.
Der erfindungsgemäße Drucksensor, beispielsweise ein Halbleiterdrucksensor, umfasst einen einkristallinen Membrankörper, welcher eine Messmembran und einen die Messmembran umgebende Randbereich aufweist, wobei derThe pressure sensor according to the invention, for example a semiconductor pressure sensor, comprises a monocrystalline membrane body which has a measuring diaphragm and an edge region surrounding the measuring diaphragm, wherein the
Randbereich eine größere Materialstärke aufweist als die Messmembran, und wobei der Randbereich eine erste Montageoberfläche aufweist, deren Oberflächen normal durch einen erste Hauptkristallachse gegeben ist; und einen einkristallinen Substratkörper, der hinsichtlich der Kristallstruktur das gleiche Halbleitermaterial aufweist wie der Membrankörper, wobei der Substratkörper eine zweite Montageoberfläche aufweist, deren Oberflächennormale parallel zur ersten Hauptkristallachse verläuft, wobei der Membrankörper mit dem Substratkörper durch Fügen der ersten Montageoberfläche mit der zweiten Montageoberfläche fest verbunden ist, wobei erfindungsgemäß auch die Orientierungen anderer Hauptkristallachsen von Membrankörper und Substratkörper jeweils parallel zueinander ausgerichtet sind.Edge region has a greater material thickness than the measuring diaphragm, and wherein the edge region has a first mounting surface, the surfaces of which is given normally by a first main crystal axis; and a monocrystalline substrate body having the same semiconductor material as the membrane body with respect to the crystal structure, the substrate body having a second mounting surface whose surface normal is parallel to the first main crystal axis, the membrane body being fixedly connected to the substrate body by joining the first mounting surface to the second mounting surface is, according to the invention, the orientations of other main crystal axes of membrane body and substrate body are each aligned parallel to each other.
In einer Ausgestaltung der Erfindung weisen der Membrankörper und der Substratkörper Si, SiC oder Saphir auf.In one embodiment of the invention, the membrane body and the substrate body Si, SiC or sapphire.
In einer Weiterbildung der Erfindung ist die erste Hauptkristallachse beispielsweise für eine Si eine <100>-, oder eine <1 11 >-Achse.In a further development of the invention, the first main crystal axis is, for example for a Si, a <100> or a <11> axis.
In einer Weiterbildung der Erfindung sind die erste Montageoberfläche und die zweite Montageoberfläche mittels einer eutektischen Verbindung gefügt. In einer alternativen Weiterbildung der Erfindung sind die erste Montageoberfläche und die zweite Montageoberfläche mittels Fusionsbinden (Englisch: Fusionbonding) gefügt, wobei die erste Montageoberfläche und die zweite Montageoberfläche insbesondere im Waferverband vor der Vereinzelung der Sensoren gefügt sind (Englisch: Fullwaferbonding).In a development of the invention, the first mounting surface and the second mounting surface are joined by means of a eutectic connection. In an alternative development of the invention, the first mounting surface and the second mounting surface are joined by fusion bonding (English: fusion bonding), wherein the first mounting surface and the second mounting surface are joined in particular in the wafer assembly prior to the separation of the sensors (English: full wafer bonding).
Der erfindungsgemäße Drucksensor umfasst gemäß einer Ausgestaltung der Erfindung einen Wandler zum Wandeln einer druckabhängigen Verformung der Messmembran in ein elektrisches Signal, wobei der Wandler insbesondere ein (piezo-)resistiver oder ein kapazitiver Wandler sein kann.The pressure sensor according to the invention comprises, according to one embodiment of the invention, a transducer for converting a pressure-dependent deformation of the measuring diaphragm into an electrical signal, wherein the transducer may in particular be a (piezo) resistive or a capacitive transducer.
Der erfindungsgemäße Drucksensor kann ein Absolutdrucksensor, ein Relativdrucksensor oder ein Differenzdrucksensor sein, wobei ein Absolutdrucksensor einen Mediendruck gegen Vakuum misst, ein Relativdrucksensor einen Mediendruck gegen Atmosphärendruck misst, und ein Differenzdrucksensor die Differenz zwischen einem ersten Mediendruck und einem zweiten Mediendruck misst.The pressure sensor according to the invention may be an absolute pressure sensor, a relative pressure sensor or a differential pressure sensor, wherein an absolute pressure sensor measures a media pressure against vacuum, a relative pressure sensor measures a media pressure against atmospheric pressure, and a differential pressure sensor measures the difference between a first media pressure and a second media pressure.
Der erfindungsgemäße Drucksensor bietet die Vorteile, gegenüber dem Stand der Technik, dass einerseits die Wahrscheinlichkeit für Defekte zwischenThe pressure sensor according to the invention offers the advantages over the prior art that on the one hand the probability of defects between
Substratkörper und Membrankörper erheblich reduziert ist, und dass andererseits die anisotropen Materialeigenschaften in der Nähe der Montageflächen nicht mehr zum Eintrag von inhomogenen Verspannungen führen. Damit kann im Ergebnis die Langzeitstabilität und die Messgenauigkeit verbessert werden.Substrate body and membrane body is significantly reduced, and that on the other hand, the anisotropic material properties in the vicinity of the mounting surfaces no longer lead to the entry of inhomogeneous tension. As a result, the long-term stability and the measurement accuracy can be improved as a result.
Ein erfindungsgemäßer Druckmessaufnehmer, umfasst einen erfindungsgemäßen Drucksensor und ein Gehäuse, welches in seinem Inneren eine Sensorkammer aufweist, in welcher der Drucksensor angeordnet ist, und mindestens einen hydraulischen Pfad, der sich von einer äußeren Oberfläche des Gehäuses in die Sensorkammer erstreckt, um eine Oberfläche der Messmembran mit einem zu messenden Druck zu beaufschlagen. In einer Ausgestaltung des Druckmessaufnehmer ist eine Öffnung des hydraulischen Pfades in der äußeren Oberfläche des Gehäuses mit einer Trennmembran überdeckt, die entlang eines Randes druckdicht mit der äußeren Oberfläche des Gehäuses verbunden ist, und wobei das zwischen der Trennmembran und der Messmembran eingeschlossene Volumen des hydraulischen Pfades mit einer Übertragungsmedium, z.B. einer nicht kompressiblen Flüssigkeit gefüllt ist.A pressure sensor according to the invention comprises a pressure sensor according to the invention and a housing which has in its interior a sensor chamber in which the pressure sensor is arranged, and at least one hydraulic path extending from an outer surface of the housing into the sensor chamber around a surface of the Apply measuring membrane with a pressure to be measured. In one embodiment of the pressure transducer, an opening of the hydraulic path in the outer surface of the housing is covered with a separation membrane which is pressure-tightly connected to the outer surface of the housing along an edge, and wherein the volume of the hydraulic path enclosed between the separation membrane and the measurement membrane is filled with a transmission medium, such as a non-compressible liquid.
Die Erfindung wird nun anhand eines in der Zeichnung dargestellten Ausführungsbeispiels erläutert. Es zeigt:The invention will now be explained with reference to an embodiment shown in the drawing. It shows:
Fig. 1 : eine Darstellung der Hauptkristallebenen eines Siliziumkristalls;Fig. 1: a representation of the main crystal planes of a silicon crystal;
Fig. 2: eine perspektivische Schnittansicht eines erfindungsgemäßen Membrankörpers und eines erfindungsgemäßen2 shows a perspective sectional view of a membrane body according to the invention and of a device according to the invention
Substratkörpers; undSubstrate body; and
Fig. 3: einen Längsschnitt durch einen erfindungsgemäßen3 shows a longitudinal section through an inventive
Druckmessaufnehmer.Pressure transducers.
Als Hintergrundinformation zur vorliegenden Erfindung zeigt Figur 1 die Hauptkristallebenen {100}, {1 10} und {11 1 } eines Siliziumkristalls sowie deren Orientierung zueinander.As background information to the present invention, Figure 1 shows the main crystal planes {100}, {1 10} and {11 1} of a silicon crystal and their orientation to each other.
Wie in Figur 2 dargestellt, umfasst ein Membrankörper 1 einkristallines Silizium. Er weist eine Messmembran 3 auf, welche in einer {100}-Ebene verläuft. Die Messmembran ist durch einen Ätz-Prozess in einem Siliziumkristall präpariert, wobei durch den Ätz-Prozess {1 1 1 }-Ebenen gebildet werden, welche einen Randbereich 5 des Membrankörpers zur Messmembran 3 hin begrenzen. Parallel zur Messmembran, also auch mit {100}-Orientierung, verläuft eine erste Montagefläche 7. Senkrecht zur Fläche der Messmembran 3 und senkerecht zur Montageflächen verlaufen, jeweils senkrecht zueinander, {1 10} Ebenen, welche den Membrankörper seitlich begrenzen. Der Membrankörper 1 ist mit einem Substratkörper 10 zu fügen, welcher eine {100}-Ebene 12 und parallel dazu eine {100}-Ebene 14 aufweist, wobei letztere als zweite Montagefläche dient. Der Substratkörper ist seitlich ebenfalls durch {110}-Ebenen begrenzt. Bei derAs shown in FIG. 2, a membrane body 1 comprises monocrystalline silicon. It has a measuring membrane 3, which runs in a {100} plane. The measuring membrane is prepared by an etching process in a silicon crystal, {1 1 1} planes being formed by the etching process, which delimit an edge region 5 of the membrane body towards the measuring membrane 3. Parallel to the measuring diaphragm, ie also with {100} orientation, runs a first mounting surface 7. Perpendicular to the surface of the measuring diaphragm 3 and perpendicular to the Mounting surfaces run, each perpendicular to each other, {1 10} planes, which limit the membrane body laterally. The membrane body 1 is to be joined to a substrate body 10 which has a {100} plane 12 and, in parallel, a {100} plane 14, the latter serving as a second mounting surface. The substrate body is also bounded laterally by {110} planes. In the
Herstellung des erfindungsgemäßen Drucksensors werden der Membrankörper 1 und Substratkörper 10 in der Weise zueinander orientiert, dass die erste Montagefläche an der zweiten Montagefläche anliegt, und dass die {1 10}- Ebenen von Membrankörper 1 und Substratkörper 10 jeweils parallel zueinander verlaufen. Mit dieser Orientierung werden der Membrankörper 1 und der Substratkörper 10 durch Fusionsbinden miteinander gefügt, wobei dies insbesondere im Waferverband geschieht, bevor die Drucksensoren durch Sägen der Wafer entlang der {1 10} Ebenen vereinzelt werden. Die Wafer weisen entsprechende Orientierungsmarken auf, welche die beschriebene Ausrichtung von Membrankörper und Substratkörper zueinander ermöglichen.Production of the pressure sensor according to the invention, the membrane body 1 and the substrate body 10 are oriented in such a way to each other, that the first mounting surface is applied to the second mounting surface, and that the {1 10} - planes of the membrane body 1 and substrate body 10 each parallel to each other. With this orientation, the membrane body 1 and the substrate body 10 are joined together by fusion bonding, and this is especially done in the wafer assembly before the pressure sensors are singulated by sawing the wafers along the {1 10} planes. The wafers have corresponding orientation marks, which allow the described alignment of membrane body and substrate body to each other.
Figur 3 zeigt einen erfindungsgemäßen Druckmessaufnehmer, bei welchem ein erfindungsgemäßer Drucksensor, bestehend aus einem Membrankörper 1 und einem Substratkörper 10, die entlang der ersten Montageoberfläche 7 und der zweiten Montagefläche 14 miteinander gefügt sind, in einer Sensorkammer 22 in einem Metallgehäuse 20 angeordnet ist. Der dargestellte Druckmessaufnehmer ist ein Relativdruckmessaufnehmer, bei welchem eine Messmembran 3 des Hableiterdrucksensors über eine Kapillarleitung 24, die sich zu einer Oberfläche des Gehäuses 20 erstreckt, mit einem auf eine Trennmembran 26 einwirkenden Mediendruck beaufschlagt. Die Messmembran 26 ist mit einer umlaufenden Schweißnaht mit der Oberfläche des Gehäuses 20 verbunden, wobei das freie Volumen der Sensorkammer 22 und das unter der Trennmembran eingeschlossene Volumen mit einem Übertragungsmedium, z.B. einer nicht kompressiblen Flüssigkeit gefüllt ist. Durch das Gehäuse und durch den Substratkörper 10 erstreckt sich ein rückseitiger Kanal 28, über welche dieFIG. 3 shows a pressure measuring transducer according to the invention, in which a pressure sensor according to the invention, consisting of a membrane body 1 and a substrate body 10, which are joined together along the first mounting surface 7 and the second mounting surface 14, is arranged in a sensor housing 22 in a metal housing 20. The pressure transducer shown is a Relativdruckmessaufnehmer, in which a measuring diaphragm 3 of the Hableiterdrucksensors via a capillary 24, which extends to a surface of the housing 20, acted upon by a pressure acting on a separation membrane 26 media pressure. The measuring membrane 26 is connected to the surface of the housing 20 with a circumferential weld, the free volume of the sensor chamber 22 and the volume enclosed under the separation membrane being mixed with a transfer medium, e.g. a non-compressible liquid is filled. Through the housing and through the substrate body 10 extends a rear channel 28, via which the
Rückseite der Messmembran 3 mit dem Atmosphärendruck als Referenzdruck zu beaufschlagen ist. Der Substratkörper ist rückseitig mittels einer drucktragenden Fügung, beispielsweise einer Klebung 30, durch welche der Kanal 28 verläuft, in der Sensorkammer 22 fixiert. Rear of the measuring diaphragm 3 with the atmospheric pressure as the reference pressure too is charged. The substrate body is fixed in the sensor chamber 22 on the back by means of a pressure-bearing joint, for example a bond 30, through which the channel 28 extends.

Claims

Patentansprüche claims
1. Drucksensor, umfassend: einen einkristallinen Membrankörper (1 ), welcher eine Messmembran (3) und einen die Messmembran umgebende Randbereich (5) aufweist, wobei der Randbereich eine größere Materialstärke aufweist als die Messmembran (3), und wobei der Randbereich eine erste Montageoberfläche (7) aufweist, deren Oberflächennormale durch einen erste Hauptkristallachse gegeben ist; und einen einkristallinen Substratkörper (10), der hinsichtlich der Kristallstruktur das gleicheA pressure sensor, comprising: a monocrystalline membrane body (1) which has a measuring diaphragm (3) and an edge region (5) surrounding the measuring diaphragm, wherein the edge region has a greater material thickness than the measuring diaphragm (3), and wherein the edge region is a first Mounting surface (7) whose surface normal is given by a first main crystal axis; and a single crystalline substrate body (10) having the same crystal structure
Halbleitermaterial aufweist wie der Membrankörper(i ) , wobei der Substratkörper (10) eine zweite Montageoberfläche (14) aufweist, deren Oberflächennormale parallel zur ersten Hauptkristallachse verläuft, wobei der Membrankörper mit dem Substratkörper durch Fügen der ersten Montageoberfläche mit der zweiten Montageoberfläche fest verbunden ist, dadurch gekennzeichnet, dass auch die Orientierungen anderer Hauptkristallachsen von Membrankörper und Substratkörper jeweils parallel zueinander ausgerichtet sind.Semiconductor material has as the membrane body (i), wherein the substrate body (10) has a second mounting surface (14), the surface normal parallel to the first main crystal axis, wherein the membrane body is firmly connected to the substrate body by joining the first mounting surface with the second mounting surface, characterized in that the orientations of other main crystal axes of membrane body and substrate body are each aligned parallel to each other.
2. Drucksensor nach Anspruch 1 , wobei der Membrankörper und der Substratkörper Si, SiC oder Saphir aufweisen.2. Pressure sensor according to claim 1, wherein the membrane body and the substrate body Si, SiC or sapphire have.
3. Drucksensor gemäß Anspruch 1 oder Anspruch 2, wobei die erste Hauptkristallachse eine <100>-, <1 1 1 >-Achse ist.3. Pressure sensor according to claim 1 or claim 2, wherein the first main crystal axis is a <100>, <1 1 1> axis.
4. Drucksensor gemäß einem der Ansprüche 1 bis 3, wobei die erste Montageoberfläche und die zweite Montageoberfläche mittels einer eutektischen Verbindung gefügt sind. 4. Pressure sensor according to one of claims 1 to 3, wherein the first mounting surface and the second mounting surface are joined by means of a eutectic connection.
5. Drucksensor gemäß einem der Ansprüche 1 bis 3, wobei die erste Montageoberfläche und die zweite Montageoberfläche mittels Fusionsbinden gefügt sind.5. Pressure sensor according to one of claims 1 to 3, wherein the first mounting surface and the second mounting surface are joined by means of fusion bonding.
6. Drucksensor nach Anspruch 5, wobei die erste Montageoberfläche und die zweite Montageoberfläche im Waferverband gefügt sind.6. A pressure sensor according to claim 5, wherein the first mounting surface and the second mounting surface are joined in the wafer assembly.
7. Drucksensor nach einem der vorhergehenden Ansprüche, weiterhin umfassend einen Wandler zum Wandeln einer druckabhängigen Verformung der Messmembran in ein elektrisches Signal.7. Pressure sensor according to one of the preceding claims, further comprising a transducer for converting a pressure-dependent deformation of the measuring diaphragm into an electrical signal.
8. Drucksensor nach Anspruch 7,wobei der Wandler ein (piezo-) resistiver oder ein kapazitiver Wandler ist.8. Pressure sensor according to claim 7, wherein the transducer is a (piezo) resistive or a capacitive transducer.
9. Drucksensor nach einem der vorhergehenden Ansprüche, wobei der Drucksensor ein Absolutdrucksensor, ein Relativdrucksensor oder ein Differenzdrucksensor ist.9. Pressure sensor according to one of the preceding claims, wherein the pressure sensor is an absolute pressure sensor, a relative pressure sensor or a differential pressure sensor.
10. Druckmessaufnehmer, umfassend:10. Pressure transducer, comprising:
einen Drucksensor nach einem der vorhergehenden Ansprüche; und ein Gehäuse, welches in seinem inneren eine Sensorkammer aufweist, in welcher der Drucksensor angeordnet ist, und mindestens einen hydraulischen Pfad, der sich von einer äußeren Oberfläche des Gehäuses in die Sensorkammer erstreckt, um eine Oberfläche der Messmembran mit einem zu messenden Druck zu beaufschlagen.a pressure sensor according to one of the preceding claims; and a housing having in its interior a sensor chamber in which the pressure sensor is disposed, and at least one hydraulic path extending from an outer surface of the housing into the sensor chamber to pressurize a surface of the diaphragm with a pressure to be measured ,
11. Druckmessaufnehmer nach Anspruch 10, wobei eine Öffnung des hydraulischen Pfades in der äußeren Oberfläche des Gehäuses mit einer Trennmembran überdeckt ist, die entlang eines Randes druckdicht mit der äußeren Oberfläche des Gehäuses verbunden ist, und wobei das zwischen der Trennmembran und der Messmembran eingeschlossene Volumen des hydraulischen Pfades mit einem Übertragungsmedium gefüllt ist. 11. A pressure transducer according to claim 10, wherein an opening of the hydraulic path in the outer surface of the housing is covered with a separating membrane which is pressure-tight along an edge connected to the outer surface of the housing, and wherein the between the volume of the hydraulic path enclosed in the separating membrane and the measuring membrane is filled with a transfer medium.
EP10711204A 2009-03-26 2010-03-24 Pressure sensor Ceased EP2411781A1 (en)

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