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EP2499654A1 - Dispositif de production de plasma à l'aide de micro-ondes - Google Patents

Dispositif de production de plasma à l'aide de micro-ondes

Info

Publication number
EP2499654A1
EP2499654A1 EP10814723A EP10814723A EP2499654A1 EP 2499654 A1 EP2499654 A1 EP 2499654A1 EP 10814723 A EP10814723 A EP 10814723A EP 10814723 A EP10814723 A EP 10814723A EP 2499654 A1 EP2499654 A1 EP 2499654A1
Authority
EP
European Patent Office
Prior art keywords
electrical conductor
microwaves
coupling
shaped
vacuum container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10814723A
Other languages
German (de)
English (en)
Inventor
Horst Muegge
Klaus-Martin BAUMGÄRTNER
Mathias Kaiser
Lukas Alberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Muegge GmbH
Original Assignee
Roth and Rau Muegge GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau Muegge GmbH filed Critical Roth and Rau Muegge GmbH
Publication of EP2499654A1 publication Critical patent/EP2499654A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means

Definitions

  • the invention relates to a device for generating plasma by means of microwaves for CVD coating of a substrate, wherein the device comprises a vacuum container, in which a reaction gas can be supplied, and an electrical conductor disposed therein, which is connected to a device for coupling microwaves ,
  • Coating processes based on the chemical vapor deposition can be used.
  • Coating methods are also referred to below as CVD (Chemical Vapor Deposition).
  • CVD Chemical Vapor Deposition
  • a solid substance component is deposited due to a chemical reaction from the gas phase.
  • At the chemical reaction must be at least one gaseous
  • Vapor deposition can reduce the temperature load on the Substrates are reduced. For this purpose will be
  • a plasma is generated adjacent to the substrate surface, for example with microwaves, in order to excite the starting compound, usually a reaction gas, through the plasma and the chemical substances required for the coating
  • a tubular outer conductor is known, which is coupled via an axially extending on the outer conductor along slot-shaped opening to a reaction space in which there is a substrate to be coated.
  • the tubular outer conductor can by
  • Microwave pulses are generated in a plasma, that is a reaction gas near the slit-shaped opening of the plasma
  • Outer conductor stimulates and supports a CVD coating of the substrate, or enabled.
  • Spatial separation of the plasma generated by the microwaves can no longer be guaranteed by the electrically conductive microwave conductors, no spatially propagating microwaves can form more, so that the plasma generation is interrupted.
  • the electrical conductor is connected at its two ends in each case with a device for coupling microwaves, that the electrical conductor is connected to a voltage source, with which between the electrical conductor and the surrounding vacuum container a
  • Coupling of microwaves is electrically isolated or decoupled. Due to the potential difference of the electrical conductor with respect to the vacuum container and in it
  • Reactive gas is an electric field is generated around the electrical conductor, so that electrically charged particles are either moved to the electrical conductor or repelled by him. It creates a den
  • Frequency range is the range of radio frequencies
  • microwaves not appreciably affected may also be a commercially available available
  • electrical conductor electrons are displaced from a plasma generated around the electrical conductor away from the electrical conductor in the radial direction and collect in one by the negative electric potential
  • the electrons surrounding the electrical conductor of the plasma together with the electrical conductor form a coaxial electrically conductive arrangement in which the coupled-in microwaves can propagate.
  • electrical conductor are distributed and cause the generation of a correspondingly homogeneous plasma.
  • Due to the negative electrical potential of the electrical conductor can also be achieved that negatively charged particles, or ejected electrons and positively charged ions are accelerated toward the electrical conductor. With a suitable specification of the negative electrical
  • Potentials can by the thus generated bombardment of the electrical conductor with positively charged ions a Adhesion and deposition of the impact of high kinetic energy impacting the electrical conductor ions are reduced, or already deposited ions can be replaced by the continuous ion bombardment of the electrical conductor again.
  • suitable environmental conditions and operating parameters can be achieved in this way, a self-cleaning of the electrical conductor, a continuously increasing coating of the electrical conductor, in particular in the region of electrically insulated housing feedthroughs and arranged in this area devices for
  • Coupling of microwaves is prevented or at least delayed.
  • the device can then over a long time
  • Periods for CVD coating of a substrate with an electrically conductive coating material can be used without regular interruptions of the
  • Microwave propagation and plasma generation necessary components are required.
  • a high coating rate is desired, so that only one
  • microwave excitation which is also advantageous for many coating processes, in particular for PECVD coating processes.
  • the electrical conductor is a waveguide which is connected to a cooling fluid reservoir.
  • the electrical conductor has a rod-shaped shape.
  • a rod-shaped electrical conductor in particular a hollow cylindrical electrical conductor can be produced inexpensively and allows due to the simple geometric conditions, a very homogeneous formation of the plasma along the rod-shaped electrical conductor.
  • Plasma generation can be generated by a plurality of parallel and spaced apart rod-shaped conductors. According to another embodiment of the inventive concept, it is provided that the electrical conductor has a
  • the curved electrical conductor can be arranged within a substantially flat surface and, for example, a
  • Workspace can be generated largely homogeneous plasma, so that a correspondingly homogeneous coating of a matched in terms of its dimensions to the working area substrate can be achieved. It is also conceivable, by a suitable shaping of a curved electrical conductor, or of
  • Feedthrough filter is connected to the voltage source.
  • the feedthrough filter can either be in the range of
  • Device for coupling the microwaves or be arranged in the region of the voltage source, or in the course of the electrically conductive connection between the voltage source and the vacuum container.
  • the device for coupling in microwaves to the electrical conductor widens in a funnel shape.
  • the device for coupling microwaves may be partially or completely filled with a dielectric material to the
  • the device for coupling microwaves may be a frusto-conical or preferably a horn-shaped
  • the slot-shaped or groove-shaped recesses or indentations can be arranged in the radial direction or at an angle thereto along closed circumferential lines.
  • the device for coupling microwaves essentially widens within the vacuum tank.
  • the device for coupling microwaves has a comparatively small diameter, or a small cross-sectional area, so that commercially available
  • Sealing devices or sealing components for the print density and electrically insulated attachment of the electrical conductor and the surrounding device for coupling microwaves can be used.
  • Figure 1 is a schematic representation of an apparatus for generating plasma by means of microwaves with a
  • Vacuum tank and with a arranged therein
  • Figure 2 shows an example of different surface
  • FIG. 4 shows a schematic representation of a device arranged in the region of a housing wall of the vacuum container for coupling microwaves, which electrically surrounds the concentrically arranged electrical conductor, FIG.
  • FIG. 5 shows a different embodiment of the device for coupling in microwaves shown in FIG. 4,
  • Figure 6 is a turn different embodiment of a
  • Fig. 7 shows another embodiment of a device for coupling microwaves in enlarged
  • FIG. 8 shows a further embodiment of a device for coupling microwaves in one with FIG. 7
  • the device 1 has a vacuum container 2, in which an electrical conductor 3 between two
  • the electrical conductor 3 can be made conductive or semi-conductive material.
  • electrical conductor 3 is by means of suitable
  • Sealing elements 5 electrically isolated and pressure-tight fixed to the two housing walls 4.
  • the electrical conductor 3 is connected at its two ends in each case with a device for coupling microwaves 6.
  • a device for coupling microwaves 6 is connected at its two ends in each case with a device for coupling microwaves 6.
  • Microwaves 6 can be coupled to microwaves on both sides of the electrical conductor 3.
  • the coupling can be independent of each other, but preferably in
  • the electrical conductor 3 is additionally with a
  • Voltage source 7 is connected, which can bring the electrical conductor 3 to a negative electrical potential relative to the appropriately grounded vacuum vessel 2.
  • the required bias voltage can be
  • Devices for coupling the microwaves 6 and the feeding microwave conductors have no negative electrical potential.
  • a plasma is generated in the vicinity of the electrical conductor 3.
  • the electrical conductor 3 bias voltage By applied to the electrical conductor 3 bias voltage, a constant electric field is generated in which the electrons and negatively charged particles of the electrical conductor 3 are displaced radially outward.
  • the easily movable electrons of the plasma generated by the microwaves accumulate at a distance from the electrical conductor 3, which is essentially predetermined by the negative electrical potential of the electrical conductor 3, and form a casing surrounding the electrical conductor 3.
  • the bias voltage and the coupled microwave energy can be achieved that this coaxial arrangement of the electrical conductor 3 and surrounding this electrical conductor 3
  • Electron shell favors the propagation of microwaves, so that surface waves ultimately arise along the electrical conductor 3 and a homogeneous energy distribution of the injected microwave energy can be achieved.
  • the homogeneous microwave propagation leads to a correspondingly homogeneous generation and maintenance of the in the
  • Vacuum tank 2 generated plasma.
  • the vacuum container 2 can not shown
  • Feeders are fed to a reaction gas.
  • the reaction gas is excited by the plasma, so that deposition of the desired coating material is forced.
  • the coating material is reflected, inter alia, on a likewise not shown
  • Coating material Semiconductive or conductive layers may also be formed by the plasma CVD coating process described above.
  • the electric field generated around the electrical conductor 3 causes positively charged ions to be accelerated toward the electrical conductor 3 and impact the electrical conductor 3 with appropriate kinetic energy. By this ion bombardment, a self-cleaning of the electrical conductor 3 is brought about. To a heating of the electrical conductor. 3
  • the electrical conductor 3 is designed as a hollow conductor and connected at its ends with a coolant circuit, so that an effective cooling of the electrical conductor 3 can be ensured by circulating the coolant.
  • the electrical conductor 3 can be used as a rod-shaped electrical conductor 3 according to that shown in FIG.
  • Fig. 2 Spatial propagation of the plasma generated by the electrical conductor 3 can be specified.
  • Fig. 3 is an embodiment of
  • electrical conductor 3 shown with a flat, substantially spiral shape can be in a work area, which is adapted to the dimensions of the spiral-shaped area of the electrical conductor 3, with simple constructive
  • Means produce a comparatively homogeneous plasma, so that a uniform coating of a spaced apart from the electrical conductor 3 substrate is possible.
  • FIGS. 4 to 6 Various embodiments of the device for coupling in the microwaves 6 are shown by way of example in FIGS. 4 to 6.
  • an outer conductor 8 surrounding the electrical conductor 3 for the microwaves to be coupled in is outside the
  • Vacuum tank 2 flared funnel-shaped. In a funnel-shaped enlarging region 9 and in a rounded end region 10 of the device for
  • Coupling of microwaves 6 is a suitable dielectric material 11.
  • electrical conductor 3 is additionally sealed by vacuum seals 12.
  • the funnel-shaped widening of the outer conductor 8 and the dielectric material 11 located therein lead to a local weakening of the microwave field, so that a plasma generation in the area around the device for
  • Coupling of the microwaves 6 is significantly reduced. In this way can be avoided or at least delayed, that in the case of an electrically conductive
  • the funnel-shaped widening of the outer conductor 8 is the
  • Housing wall 4 of the vacuum container 2 has a small diameter and not shown in this figure, commercially available sealing elements for pressure-tight and electrically insulating sealing of the coaxial feed of the electrical conductor 3 and the surrounding outer conductor 8 can be used.
  • the end region 10 additionally has ring-shaped groove-shaped recesses 13, which due to the
  • FIGS. 7 and 8 show two further embodiments of the device surrounding the electrical conductor 3
  • End region 14 and the electrical conductor 3 is a concentrically arranged, the electrical conductor 3 surrounding slot-shaped recess 15 in the insulating, Dielectric material 11.
  • the electrical conductor 3 surrounding slot-shaped recess 15 in the insulating, Dielectric material 11.
  • an inner region 16 of the slot-shaped recess 15 is only one
  • the embodiment of the device for coupling microwaves 6 shown in FIG. 8 has slot-shaped cutouts 13 extending along a circumferential line as well as concentrically arranged slot-shaped cutouts 15 surrounding the electrical conductors 3. The greatly enlarged in this way surface of the device for

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un dispositif (1) de production de plasma à l'aide de micro-ondes, pour le revêtement par CVD d'un substrat, avec un réservoir à dépression (2) dans lequel peut être introduit un gaz réactif et avec un conducteur électrique (3) qui y est implanté et dont les deux extrémités sont reliées à un équipement destiné à coupler des micro-ondes (6) et à une source de tension (7) grâce à laquelle peut être produite une différence de potentiel entre le conducteur électrique (3) et le réservoir à dépression environnant (2), le conducteur électrique (3) étant isolé électriquement par rapport aux dispositifs de couplage de micro-ondes (6). Le conducteur électrique (3) a une forme de barre rectiligne ou une forme courbe. Le conducteur électrique (3) est relié à la source de tension (7) par un filtre de traversée. Le dispositif de couplage de micro-ondes (6) s'évase en forme d'entonnoir dans la direction du conducteur électrique (3) et il est rempli partiellement ou totalement de matériau diélectrique. Le dispositif de couplage de micro-ondes (6) possède le long de sa circonférence des ouvertures en forme de rainures.
EP10814723A 2009-11-11 2010-11-05 Dispositif de production de plasma à l'aide de micro-ondes Withdrawn EP2499654A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009044496.3A DE102009044496B4 (de) 2009-11-11 2009-11-11 Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
PCT/EP2010/066953 WO2011064084A1 (fr) 2009-11-11 2010-11-05 Dispositif de production de plasma à l'aide de micro-ondes

Publications (1)

Publication Number Publication Date
EP2499654A1 true EP2499654A1 (fr) 2012-09-19

Family

ID=43852647

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10814723A Withdrawn EP2499654A1 (fr) 2009-11-11 2010-11-05 Dispositif de production de plasma à l'aide de micro-ondes

Country Status (7)

Country Link
US (1) US10290471B2 (fr)
EP (1) EP2499654A1 (fr)
KR (1) KR101862727B1 (fr)
CN (1) CN103003913B (fr)
DE (1) DE102009044496B4 (fr)
TW (1) TWI563116B (fr)
WO (1) WO2011064084A1 (fr)

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
US9622298B2 (en) 2012-03-14 2017-04-11 Microwave Materials Technologies, Inc. Microwave launchers providing enhanced field uniformity
JP7261743B2 (ja) 2017-03-15 2023-04-20 ９１５ ラボ、エルエルシー 包装された物品のマイクロ波加熱を改善するためのエネルギー制御要素
CN110741732B (zh) 2017-03-15 2023-02-17 915 实验室公司 多遍微波加热系统
EP3613260B1 (fr) 2017-04-17 2024-01-17 915 Labs, Inc. Système de stérilisation et de pasteurisation assisté par micro-ondes en utilisant des configurations synergiques d'emballage, de support et de lancement
DE102024102296A1 (de) * 2024-01-26 2025-07-31 Fachhochschule Aachen, Körperschaft des öffentlichen Rechts Vorrichtung zum Erzeugen eines abgekoppelten Mikrowellenplasmas

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Also Published As

Publication number Publication date
WO2011064084A1 (fr) 2011-06-03
TWI563116B (en) 2016-12-21
US10290471B2 (en) 2019-05-14
TW201142075A (en) 2011-12-01
US20120279448A1 (en) 2012-11-08
KR101862727B1 (ko) 2018-05-31
KR20130127357A (ko) 2013-11-22
CN103003913B (zh) 2016-02-24
DE102009044496A1 (de) 2011-05-12
CN103003913A (zh) 2013-03-27
DE102009044496B4 (de) 2023-11-02

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