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EP2452364A4 - Photodétecteur capable de détecter un rayonnement à grande longueur d'onde - Google Patents

Photodétecteur capable de détecter un rayonnement à grande longueur d'onde Download PDF

Info

Publication number
EP2452364A4
EP2452364A4 EP10797264.8A EP10797264A EP2452364A4 EP 2452364 A4 EP2452364 A4 EP 2452364A4 EP 10797264 A EP10797264 A EP 10797264A EP 2452364 A4 EP2452364 A4 EP 2452364A4
Authority
EP
European Patent Office
Prior art keywords
long wavelength
wavelength radiation
detecting long
photodetector capable
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10797264.8A
Other languages
German (de)
English (en)
Other versions
EP2452364A1 (fr
Inventor
Doyeol Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Cooperation Foundation of University of Seoul
Original Assignee
Industry Cooperation Foundation of University of Seoul
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/498,228 external-priority patent/US8809834B2/en
Priority claimed from US12/498,204 external-priority patent/US8227793B2/en
Application filed by Industry Cooperation Foundation of University of Seoul filed Critical Industry Cooperation Foundation of University of Seoul
Publication of EP2452364A1 publication Critical patent/EP2452364A1/fr
Publication of EP2452364A4 publication Critical patent/EP2452364A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
EP10797264.8A 2009-07-06 2010-07-05 Photodétecteur capable de détecter un rayonnement à grande longueur d'onde Withdrawn EP2452364A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/498,228 US8809834B2 (en) 2009-07-06 2009-07-06 Photodetector capable of detecting long wavelength radiation
US12/498,204 US8227793B2 (en) 2009-07-06 2009-07-06 Photodetector capable of detecting the visible light spectrum
PCT/KR2010/004350 WO2011004990A1 (fr) 2009-07-06 2010-07-05 Photodétecteur capable de détecter un rayonnement à grande longueur d'onde

Publications (2)

Publication Number Publication Date
EP2452364A1 EP2452364A1 (fr) 2012-05-16
EP2452364A4 true EP2452364A4 (fr) 2017-12-06

Family

ID=43429367

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10797264.8A Withdrawn EP2452364A4 (fr) 2009-07-06 2010-07-05 Photodétecteur capable de détecter un rayonnement à grande longueur d'onde

Country Status (3)

Country Link
EP (1) EP2452364A4 (fr)
JP (1) JP5374643B2 (fr)
WO (1) WO2011004990A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8373153B2 (en) 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8395141B2 (en) 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
US8154063B2 (en) * 2010-03-02 2012-04-10 Massachusetts Institute Of Technology Ultrafast and ultrasensitive novel photodetectors
KR102176582B1 (ko) * 2013-11-19 2020-11-09 삼성전자주식회사 위상 절연체를 이용한 표면 플라즈몬 및 편광 검출소자와 그 제조방법 및 표면 플라즈몬과 편광 검출방법
JP6918591B2 (ja) * 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
JP7540204B2 (ja) * 2020-06-05 2024-08-27 富士通株式会社 光センサ
CN116825859A (zh) * 2023-07-26 2023-09-29 湖北珞珈实验室 一种片上集成的等离激元光电探测器及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050181587A1 (en) * 2002-09-30 2005-08-18 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20080170982A1 (en) * 2004-11-09 2008-07-17 Board Of Regents, The University Of Texas System Fabrication and Application of Nanofiber Ribbons and Sheets and Twisted and Non-Twisted Nanofiber Yarns

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069380A (en) * 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory
JP4029420B2 (ja) * 1999-07-15 2008-01-09 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
FR2803950B1 (fr) * 2000-01-14 2002-03-01 Centre Nat Rech Scient Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
US7095058B2 (en) * 2003-03-21 2006-08-22 Intel Corporation System and method for an improved light-emitting device
JP4664123B2 (ja) * 2005-06-07 2011-04-06 日本電信電話株式会社 検出器
US7420225B1 (en) * 2005-11-30 2008-09-02 Sandia Corporation Direct detector for terahertz radiation
US20070298551A1 (en) * 2006-02-10 2007-12-27 Ecole Polytechnique Federale De Lausanne (Epfl) Fabrication of silicon nano wires and gate-all-around MOS devices
JPWO2008072688A1 (ja) * 2006-12-14 2010-04-02 日本電気株式会社 フォトダイオード
US8373153B2 (en) * 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050181587A1 (en) * 2002-09-30 2005-08-18 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20080170982A1 (en) * 2004-11-09 2008-07-17 Board Of Regents, The University Of Texas System Fabrication and Application of Nanofiber Ribbons and Sheets and Twisted and Non-Twisted Nanofiber Yarns

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CARMEN KAR MAN FUNG ET AL: "Nanoresonant signal boosters for carbon nanotube based infrared detectors", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 20, no. 18, 6 May 2009 (2009-05-06), pages 185201, XP020152908, ISSN: 0957-4484, DOI: 10.1088/0957-4484/20/18/185201 *
See also references of WO2011004990A1 *

Also Published As

Publication number Publication date
JP2012529768A (ja) 2012-11-22
JP5374643B2 (ja) 2013-12-25
WO2011004990A1 (fr) 2011-01-13
EP2452364A1 (fr) 2012-05-16

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