EP2337765A1 - Method for removing titanium from hexachlorodisilane - Google Patents
Method for removing titanium from hexachlorodisilaneInfo
- Publication number
- EP2337765A1 EP2337765A1 EP09783845A EP09783845A EP2337765A1 EP 2337765 A1 EP2337765 A1 EP 2337765A1 EP 09783845 A EP09783845 A EP 09783845A EP 09783845 A EP09783845 A EP 09783845A EP 2337765 A1 EP2337765 A1 EP 2337765A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hexachlorodisilane
- compounds
- titanium
- distillation
- structural units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000010936 titanium Substances 0.000 title description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title description 10
- 229910052719 titanium Inorganic materials 0.000 title description 10
- 150000003609 titanium compounds Chemical class 0.000 claims abstract description 11
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000004821 distillation Methods 0.000 claims description 9
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- 238000010908 decantation Methods 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 239000005046 Chlorosilane Substances 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 229920001429 chelating resin Polymers 0.000 description 3
- -1 cyclic ether compounds Chemical class 0.000 description 3
- 238000004508 fractional distillation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001515 polyalkylene glycol Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 125000006413 ring segment Chemical group 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- QNTPNTFBQZBRCK-UHFFFAOYSA-N 1,5,9,13-tetraoxacyclohexadecane Chemical compound C1COCCCOCCCOCCCOC1 QNTPNTFBQZBRCK-UHFFFAOYSA-N 0.000 description 1
- HGRVTNYKVLTPAB-UHFFFAOYSA-N 2,2-dimethyl-1,4-dioxane Chemical compound CC1(C)COCCO1 HGRVTNYKVLTPAB-UHFFFAOYSA-N 0.000 description 1
- UJQZTMFRMLEYQN-UHFFFAOYSA-N 3-methyloxane Chemical compound CC1CCCOC1 UJQZTMFRMLEYQN-UHFFFAOYSA-N 0.000 description 1
- LJPCNSSTRWGCMZ-UHFFFAOYSA-N 3-methyloxolane Chemical compound CC1CCOC1 LJPCNSSTRWGCMZ-UHFFFAOYSA-N 0.000 description 1
- SBUOHGKIOVRDKY-UHFFFAOYSA-N 4-methyl-1,3-dioxolane Chemical compound CC1COCO1 SBUOHGKIOVRDKY-UHFFFAOYSA-N 0.000 description 1
- MPZLAZAHBNMMGF-UHFFFAOYSA-N CC1COCCC1.Cl[Si]([Si](Cl)(Cl)Cl)(Cl)Cl Chemical compound CC1COCCC1.Cl[Si]([Si](Cl)(Cl)Cl)(Cl)Cl MPZLAZAHBNMMGF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910021346 calcium silicide Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000000918 plasma mass spectrometry Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D37/00—Processes of filtration
Definitions
- the invention relates to a process for removing titanium from hexachlorodisilane by treatment with organic compounds.
- Hexachlorodisilane which is made from silicides, always contains traces of titanium and other metallic impurities. Titanium is critical in that the titanium (IV) chloride is only slightly different in boiling point from hexachlorodisilane. To separate it, a complex fractional distillation is necessary.
- Chlorosilanes distillation can be relatively easily removed from titanium. During the silicon deposition% arise from the chlorosilanes turn disilanes, but present in concent ⁇ rations at first. When storing these silanes in stainless steel containers Titan Pro ⁇ domestic product may occur due to corrosion in turn, which in turn could previously only separated by fractional distillation.
- the process according to the invention has the further advantage that hexachlorodisilane is obtained in high purity. Purity of at most 100, in particular at most 50 ppb of Ti (by weight) are achievable.
- the bound titanium compounds can be separated from the hexachlorodisilane in different ways.
- the bound titanium compounds are separated from the hexachlorodisilane by distillation, decantation or filtration.
- the distillation is greatly simplified compared to the untreated hexachlorodisilane, because the complicated boiling fraction of the bound titanium compounds eliminates the complicated fractional distillation.
- the bound titanium compounds remain in the bottom of the distillation.
- a solvent When removing titanium compounds from hexachlorodisilane, a solvent can also be used.
- Preferred compounds (V) are cyclic ether compounds which preferably have at least 5 ring atoms and preferably at most 30 ring atoms, such as 1, 3-dioxolane, tetrahydrofuran, tetrahydropyran, tetrahydropyran, 1,4-dioxane, [12] crown-4,
- the cyclic ether compounds may have hydrocarbon substituents, in particular alkyl radicals having 1 to 6 carbon atoms, preferably methyl and ethyl.
- Examples of substituted cyclic ether compounds are 4-methyl 1, 3-dioxolane, 3-methyl-tetrahydrofuran, 2, 2-dimethyl-1, 4-dioxane.
- monoethers ethers are preferred with a boiling point of at least 6O 0 C at 1 bar, for example, di-n-propyl ether.
- Polyethers which can also be used are polyalkylene glycols, such as polyethylene glycol and polypropylene glycol.
- the average molecular weights Mn of the polyalkylene glycols are preferably at least 150, in particular at least 500 and preferably at most 10000, in particular at most 5000.
- Preferred compounds (V) are also cyclic and linear thioether compounds, such as dialkyl sulfides.
- thiols ( ⁇ C-SH) compounds having a molecular weight of at least 1000 are preferred.
- vinyl polymers with SH groups such as ion exchanger, for example Amberlite ® G 73rd
- At least 100 parts by weight of hexachlorodisilane are preferably used for at least 0.001 parts, more preferably at least 0.05 parts by weight of compound (V), and preferably not more than 10, particularly preferably not more than 5 parts by weight of compound (V).
- Mixtures containing hexachlorodisilane can also be treated with organic compound (V).
- the hexachlorodisilane used contains at most 100 ppm, particularly preferably 10 ppm, in particular 1 ppm of titanium, each by weight.
- These chlorosilane mixtures used may have been treated with chlorine before or during the purification in order to convert hydrogenchlorosilanes to chlorosilanes, since in particular hydrogenchlorosilanes with a higher hydrogen content may be self-igniting.
- chlorosilane mixtures used can also be combined with other substances, such as e.g. Activated charcoal or, if at all, preferably pyrolytic or silica produced by the precipitation process.
- substances such as e.g. Activated charcoal or, if at all, preferably pyrolytic or silica produced by the precipitation process.
- the treatment with organic compound (V) is preferably carried out at at least -5 0 C, preferably at least 15 ° C.
- the distillation can be carried out either under normal pressure, overpressure or reduced pressure.
- the distillation according to the invention can be carried out in the presence or absence of inert gas, such as nitrogen, helium or argon, but it can also be carried out in air as long as the moisture content is at most 10 ppbw. For reasons of cost, the distillation is preferably carried out in the presence of nitrogen.
- inert gas such as nitrogen, helium or argon
- Example 3 ca 100g hexachlorodisilane added with 4 g of Amberlite ® GT 73 stirred at room temperature for 6 hours. A sample was filtered off and examined.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a method for removing titanium compounds from hexachlorodisilane, wherein hexachlorodisilane is treated with an organic compound (V) which contains the structural units =C-S- or =C-O-.
Description
Verfahren zur Entfernung von Titan aus Hexachlordisilan Process for removing titanium from hexachlorodisilane
Die Erfindung betrifft ein Verfahren zur Entfernung von Titan aus Hexachlordisilan durch Behandlung mit organischen Verbin- düngen .The invention relates to a process for removing titanium from hexachlorodisilane by treatment with organic compounds.
Hexachlordisilan, das aus Siliciden hergestellt wird, enthält immer Spuren an Titan und anderen metallischen Verunreinigungen. Titan ist insofern kritisch, da das Titan (IV) Chlorid sich im Siedepunkt nur geringfügig von Hexachlordisilan unterscheidet. Um es abzutrennen, ist eine aufwendige fraktionierte Destillation notwendig.Hexachlorodisilane, which is made from silicides, always contains traces of titanium and other metallic impurities. Titanium is critical in that the titanium (IV) chloride is only slightly different in boiling point from hexachlorodisilane. To separate it, a complex fractional distillation is necessary.
Eine Möglichkeit ist, das bei der Siliziumabscheidung anfallen- de Silangemisch aufzuarbeiten, da die hierzu eingesetztenOne possibility is to work up the silane mixture obtained during the silicon deposition, since the components used for this purpose are
Chlorsilane destillativ vergleichsweise einfach von Titan befreit werden können. Während der Siliziumabscheidung entstehen aus den Chlorsilanen wiederum Disilane, allerdings in Konzent¬ rationen unter 1 Gew.%. Bei der Aufbewahrung dieser Silane in Edelstahlgebinden kann durch Korrosion wiederum Titan im Pro¬ dukt auftreten, das dann wiederum bisher nur durch fraktionierte Destillation abgetrennt werden konnte.Chlorosilanes distillation can be relatively easily removed from titanium. During the silicon deposition% arise from the chlorosilanes turn disilanes, but present in concent ¬ rations at first. When storing these silanes in stainless steel containers Titan Pro ¬ domestic product may occur due to corrosion in turn, which in turn could previously only separated by fractional distillation.
US 3878291 (Apr. 15, 1975, Kleber e.a.) beschreibt ein aufwen- diges Verfahren, um Tetrachlorsilan frei von Titan und anderen Metallen zu erhalten.No. 3,878,291 (Apr. 15, 1975, Kleber et al.) Describes a complex process for obtaining tetrachlorosilane free of titanium and other metals.
Gegenstand der Erfindung ist ein Verfahren zur Entfernung von Titanverbindungen aus Hexachlordisilan, bei dem Hexachlordisilan mit organischer Verbindung (V) , die Struktureinheiten sC-S- oder =C~O- enthält, behandelt wird.The invention relates to a process for the removal of titanium compounds from hexachlorodisilane, in which hexachlorodisilane with organic compound (V), the structural units sC-S- or = C ~ O- treated.
Die Titanverunreinigungen, insbesondere Titan (IV) Chlorid, wer- den durch die organischen Verbindungen (V) , die Struktureinhei-
ten =C-S~ oder =C-O- enthalten, gebunden und können dadurch leicht abgetrennt werden.The titanium impurities, in particular titanium (IV) chloride, are formed by the organic compounds (V), the structural components th = CS ~ or = CO- bound, and thus can be easily separated.
Das erfindungsgemäße Verfahren hat den weiteren Vorteil, dass Hexachlordisilan in hoher Reinheit erhalten wird. Reinheiten von höchstens 100, insbesondere höchstens 50 ppb Ti (bezogen auf das Gewicht) sind erreichbar.The process according to the invention has the further advantage that hexachlorodisilane is obtained in high purity. Purity of at most 100, in particular at most 50 ppb of Ti (by weight) are achievable.
Nach der Behandlung mit den Verbindungen (V) können die gebundenen Titanverbindungen auf unterschiedliche Weise vom Hexa- chlordisilan abgetrennt werden. Vorzugsweise werden die gebundenen Titanverbindungen durch Destillation, Dekantieren oder Filtration vom Hexachlordisilan abgetrennt.After the treatment with the compounds (V), the bound titanium compounds can be separated from the hexachlorodisilane in different ways. Preferably, the bound titanium compounds are separated from the hexachlorodisilane by distillation, decantation or filtration.
Die Destillation ist stark vereinfacht gegenüber dem unbehan- delten Hexachlordisilan, denn durch den veränderten Siedepunkt der gebundenen Titanverbindungen kann die aufwendige fraktionierte Destillation entfallen. Vorzugsweise verbleiben die gebundenen Titanverbindungen im Sumpf der Destillation.The distillation is greatly simplified compared to the untreated hexachlorodisilane, because the complicated boiling fraction of the bound titanium compounds eliminates the complicated fractional distillation. Preferably, the bound titanium compounds remain in the bottom of the distillation.
Bei der Entfernung von Titanverbindungen aus Hexachlordisilan kann auch ein Lösungsmittel eingesetzt werden.When removing titanium compounds from hexachlorodisilane, a solvent can also be used.
Die Struktureinheiten =≡C-S- oder ≡C-O- werden vorzugsweise ausgewählt aus den Struktureinheiten ==C-S-H, ≡C-S-C≡ und ≡C-O-ö≡. Auch Di- (≡C-SS-C≡) und trisulfide («C-SSS-G≡O sind geeignet.The structural units = ≡C-S- or ≡C-O- are preferably selected from the structural units == C-S-H, ≡C-S-C≡ and ≡C-O-δ. Di- (≡C-SS-C≡) and trisulfide (CC-SSS-G≡O are also suitable.
Bevorzugte Verbindungen (V) sind cyclische Etherverbindungen, die vorzugsweise mindestens 5 Ringatome und vorzugsweise höchstens 30 Ringatome aufweisen, wie 1 , 3-Dioxolan, Tetrahydrofuran, Tetrahydropyran, Tetrahydro-pyran, 1,4-Dioxan, [12]Krone-4,Preferred compounds (V) are cyclic ether compounds which preferably have at least 5 ring atoms and preferably at most 30 ring atoms, such as 1, 3-dioxolane, tetrahydrofuran, tetrahydropyran, tetrahydropyran, 1,4-dioxane, [12] crown-4,
[15]Krone-5. Die cyclischen Etherverbindungen können Kohlenwasserstoffsubtituenten aufweisen, insbesondere Alkylreste mit 1 bis 6 Kohlenstofatomen, bevorzugt Methyl und Ethyl . Beispiele für substituierte cyclische Etherverbindungen sind 4 -Methyl-
1 , 3 -dioxolan, 3 -Methyl -tetrahydrofuran, 2 , 2-Diτnethyl-l, 4- dioxan.[15] crown-fifth The cyclic ether compounds may have hydrocarbon substituents, in particular alkyl radicals having 1 to 6 carbon atoms, preferably methyl and ethyl. Examples of substituted cyclic ether compounds are 4-methyl 1, 3-dioxolane, 3-methyl-tetrahydrofuran, 2, 2-dimethyl-1, 4-dioxane.
Ebenfalls bevorzugte Verbindungen (V) sind lineare oder verzweigte Ξtherverbindungen (≡C-O~C≡=) , wie Mono- und Polyether. Als Monoether sind Ether mit einem Siedepunkt von mindestens 6O0C bei 1 bar bevorzugt, beispielsweise Di-n-propylether . Als Polyether können auch Polyalkylenglycole, wie Polyethy- lenglycol und Polypropylenglycol eingesetzt werden. Die mittleren Molmassen Mn der Polyalkylenglycole betragen vorzugsweise mindestens 150, insbesondere mindestens 500 und vorzugsweise höchstens 10000, insbesondere höchstens 5000.Also preferred compounds (V) are linear or branched verbindungentherverbindungen (≡CO ~ C≡ =), such as mono- and polyether. As monoethers ethers are preferred with a boiling point of at least 6O 0 C at 1 bar, for example, di-n-propyl ether. Polyethers which can also be used are polyalkylene glycols, such as polyethylene glycol and polypropylene glycol. The average molecular weights Mn of the polyalkylene glycols are preferably at least 150, in particular at least 500 and preferably at most 10000, in particular at most 5000.
Bevorzugte Verbindungen (V) sind auch cyclische und lineare Thioetherverbindungen, wie Dialkylsulfide . Bei den Thiolen (≡C- S-H) sind Verbindungen mit einem Molekulargewicht von mindestens 1000 bevorzugt. Beispiele dafür sind Vinylpolymere mit SH- Gruppen, wie Ionentauscher , z.B. Amberlite® G 73.Preferred compounds (V) are also cyclic and linear thioether compounds, such as dialkyl sulfides. In the thiols (≡C-SH), compounds having a molecular weight of at least 1000 are preferred. Examples of these are vinyl polymers with SH groups, such as ion exchanger, for example Amberlite ® G 73rd
Auf 100 Gewichtsteile Hexachlordisilan werden vorzugsweise min- destens 0,001, besonders bevorzugt mindestens 0,05 Gewichtsteile Verbindung (V) , und vorzugsweise höchstens 10, besonders bevorzugt höchstens 5 Gewichtsteile Verbindung (V), eingesetzt.At least 100 parts by weight of hexachlorodisilane are preferably used for at least 0.001 parts, more preferably at least 0.05 parts by weight of compound (V), and preferably not more than 10, particularly preferably not more than 5 parts by weight of compound (V).
Auch Gemische, die Hexachlordisilan enthalten, können mit orga- nischer Verbindung (V) behandelt werden.Mixtures containing hexachlorodisilane can also be treated with organic compound (V).
Vorzugsweise enthält das eingesetzte Hexachlordisilan höchstens 100 ppm, besonders bevorzugt 10 ppm, insbesondere 1 ppm Titan, jeweils auf das Gewicht bezogen.Preferably, the hexachlorodisilane used contains at most 100 ppm, particularly preferably 10 ppm, in particular 1 ppm of titanium, each by weight.
Es können beispielsweise Hexachlordisilan enthaltende Chlorsi- langemische eingesetzt werden, die aus der Reaktion von HCl mit Calciumsilicid, aus der Reaktion von Chlor mit Silizium oder aus den Prozessabgasen der Abscheidung von polykristallinem Si- lizium erhalten werden, besonders bevorzugt Prozessabgase, die
bei der Abscheidung von polykristallinem Silizium erhalten werden. Diese eingesetzten Chlorsilangemische können vor oder während der Aufreinigung mit Chlor behandelt worden sein, um Hydrogenchlorsilane zu Chlorsilanen umzuwandeln, da insbesonde- re Hydrogenchlorsilane mit höherem Wasserstoffgehalt selbstentzündlich sein können.Hexachlorodisilane-containing chlorosilane mixtures obtained, for example, from the reaction of HCl with calcium silicide, from the reaction of chlorine with silicon or from the process offgases of the deposition of polycrystalline silicon, particularly preferably process offgases, can be used obtained in the deposition of polycrystalline silicon. These chlorosilane mixtures used may have been treated with chlorine before or during the purification in order to convert hydrogenchlorosilanes to chlorosilanes, since in particular hydrogenchlorosilanes with a higher hydrogen content may be self-igniting.
Die eingesetzten Chlorsilangemische können auch noch mit weiteren Stoffen, wie z.B. Aktivkohle oder ~ wenn überhaupt - bevor- zugt pyrolytisch oder durch Fällungsprozess hergestellte Kieselsäure, versetzt werden.The chlorosilane mixtures used can also be combined with other substances, such as e.g. Activated charcoal or, if at all, preferably pyrolytic or silica produced by the precipitation process.
Die Behandlung mit organischer Verbindung (V) erfolgt vorzugsweise bei mindestens -50C, vorzugsweise mindestens 15°C.The treatment with organic compound (V) is preferably carried out at at least -5 0 C, preferably at least 15 ° C.
Falls die gebundenen Titanverbindungen durch Destillation abgetrennt werden, kann die Destillation entweder unter Normaldruck, Überdruck oder reduziertem Druck erfolgen.If the bound titanium compounds are separated by distillation, the distillation can be carried out either under normal pressure, overpressure or reduced pressure.
Die erfindungsgemäße Destillation kann in Anwesenheit oder Abwesenheit von Schutzgas, wie Stickstoff, Helium oder Argon, durchgeführt werden,- sie kann aber auch an Luft durchgeführt werden, solange der Feuchtigkeitsgehalt maximal 10 ppbw beträgt. Bevorzugt wird aus Kostengründen die Destillation in An- Wesenheit von Stickstoff durchgeführt.The distillation according to the invention can be carried out in the presence or absence of inert gas, such as nitrogen, helium or argon, but it can also be carried out in air as long as the moisture content is at most 10 ppbw. For reasons of cost, the distillation is preferably carried out in the presence of nitrogen.
Sofern nicht anders angegeben, werden die nachstehenden Beispiele bei einem Druck der umgebenden Atmosphäre, also etwa bei 1000 hPa, und bei Raumtemperatur, also bei etwa 23° durchgeführt .Unless stated otherwise, the examples below are carried out at a pressure of the surrounding atmosphere, ie at about 1000 hPa, and at room temperature, ie at about 23 °.
In den folgenden Beispielen wurde der Gehalt an Verunreinigungen nach Hydrolyse mittels ICP-MS (Ion Coupled Plasma Mass Spectrometrie) bestimmt.
Beispiel 1In the following examples, the content of impurities after hydrolysis was determined by ICP-MS (Ion Coupled Plasma Mass Spectrometry). example 1
130 g Hexachlordisilan mit einem Gehalt von 120 ppb Titan wurde 3 Tropfen 1,4-Dioxan versetzt. Das Hexachlordisilan wurde am Rückfluss gekocht und anschließend über eine Brücke abdestilliert.130 g of hexachlorodisilane containing 120 ppb of titanium were mixed with 3 drops of 1,4-dioxane. The hexachlorodisilane was refluxed and then distilled off via a bridge.
Ergebnis rohes Wach Behandlung Hexachlordisilan mit DioxanResult of raw awake treatment hexachlorodisilane with dioxane
Ti [ppb] 80 21Ti [ppb] 80 21
Beispiel 2Example 2
In einem weiteren analogen Versuch wurde ebenfalls 130 g Hexachlordisilan mit 3 Tropfen 3 -Methyl -tetrahydropyran versetzt, am Rückfluss gekocht und anschließend über eine Brücke abdestilliert .In a further analogous experiment, 130 g of hexachlorodisilane were likewise mixed with 3 drops of 3-methyltetrahydropyran, boiled under reflux and then distilled off via a bridge.
Ergebnis rohes Nach Behandlung mitResult raw after treatment with
Hexachlordisilan 3 -Methyl -tetrahydro-pyran Ti [ppb] 190 33Hexachlorodisilane 3-methyltetrahydropyran Ti [ppb] 190 33
Beispiel 3 Es wurden ca 100g Hexachlordisilan mit 4g Amberlite® GT 73 versetzt und 6 Stunden bei Raumtemperatur gerührt. Eine Probe wurde abfiltriert und untersucht .Example 3 ca 100g hexachlorodisilane added with 4 g of Amberlite ® GT 73 stirred at room temperature for 6 hours. A sample was filtered off and examined.
Ergebnis rohes Nach Behandlung mit AmberliteResult raw after treatment with Amberlite
Hexachlordisilan Nach 6 Stunden Ti [ppb] 190 7
Hexachlorodisilane After 6 hours Ti [ppb] 190 7
Claims
1. Verfahren zur Entfernung von Titanverbindungen aus Hexa- chlordisilan, bei dem Hexachlordisilan mit organischer Ver- bindung (V) , die Struktureinheiten ≡C-S- oder ≡≤C-O- enthält, behandelt wird.1. A process for the removal of titanium compounds from hexachlorodisilane in which hexachlorodisilane is treated with organic compound (V) which contains structural units ≡C-S- or ≡≤C-O-.
2. Verfahren nach Anspruch 1, bei dem die Titanverbindungen mit Verbindung (V) gebunden werden und die gebundenen Ti- tanverbindungen, durch Destillation, Dekantieren oder Filtration vom Hexachlordisilan abgetrennt werden.2. Process according to claim 1, in which the titanium compounds are bonded with compound (V) and the bound titanium compounds are separated off from hexachlorodisilane by distillation, decantation or filtration.
3. Verfahren nach Anspruch 1 oder 2, bei dem Titan (IV) Chlorid entfernt wird.3. The method of claim 1 or 2, wherein the titanium (IV) chloride is removed.
4. Verfahren nach Anspruch 1 bis 3, bei dem die Struktureinheiten der Verbindung (V) ausgewählt werden aus ≡C-S-H, =C- S-Cs und =C-O-C≡.4. The method of claim 1 to 3, wherein the structural units of the compound (V) are selected from ≡C-S-H, = C-S-Cs and = C-O-C≡.
5. Verfahren nach Anspruch 1 bis 4, bei dem als Verbindungen (V) eyeIisehe Etherverbindungen eingesetzt werden.5. The method according to claim 1 to 4, wherein as compounds (V) eyeIisehe ether compounds are used.
6. Verfahren nach Anspruch 1 bis 4, bei dem als Verbindungen6. The method according to claim 1 to 4, wherein as compounds
(V) Vinylpolymere mit SH~Gruppen eingesetzt werden. (V) Vinyl polymers with SH ~ groups are used.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008042936A DE102008042936A1 (en) | 2008-10-17 | 2008-10-17 | Process for removing titanium from hexachlorodisilane |
| PCT/EP2009/063087 WO2010043536A1 (en) | 2008-10-17 | 2009-10-08 | Method for removing titanium from hexachlorodisilane |
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| EP2337765A1 true EP2337765A1 (en) | 2011-06-29 |
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| EP09783845A Withdrawn EP2337765A1 (en) | 2008-10-17 | 2009-10-08 | Method for removing titanium from hexachlorodisilane |
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| US (1) | US8226919B2 (en) |
| EP (1) | EP2337765A1 (en) |
| JP (1) | JP5378528B2 (en) |
| KR (1) | KR101327625B1 (en) |
| CN (1) | CN102171143B (en) |
| DE (1) | DE102008042936A1 (en) |
| WO (1) | WO2010043536A1 (en) |
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| DE102014013250B4 (en) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Process for the purification of halogenated oligosilanes |
| CN105271246B (en) * | 2015-04-30 | 2017-12-22 | 宁夏胜蓝化工环保科技有限公司 | A kind of method that chloro disilane is prepared using polysilicon by-product |
| KR102072547B1 (en) | 2018-01-26 | 2020-02-04 | 오션브릿지 주식회사 | Method for purifying hexachlorodisilane |
| CN108358209B (en) * | 2018-03-06 | 2021-05-07 | 李金金 | Method for extracting and purifying electronic-grade hexachlorodisilane and extractive distillation system |
| CN109437208A (en) * | 2018-12-25 | 2019-03-08 | 洛阳中硅高科技有限公司 | The preparation facilities of disilane |
| CN109399644A (en) * | 2018-12-25 | 2019-03-01 | 洛阳中硅高科技有限公司 | The preparation method of disilane |
| CN111643916B (en) * | 2020-05-22 | 2022-07-15 | 湖北晶星科技股份有限公司 | Process for preparing high-purity hexachlorodisilane |
| RU2759500C1 (en) * | 2021-03-12 | 2021-11-15 | Лев Эдуардович Барышников | Method for purifying hexachlorodisilane from impurities of metal chlorides |
| CN117285042A (en) * | 2023-09-08 | 2023-12-26 | 新特能源股份有限公司 | Chlorosilane purification method and purification device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FR1259489A (en) | 1960-03-16 | 1961-04-28 | Pechiney | Purification of silicon and germanium halides |
| CH508359A (en) * | 1968-02-28 | 1971-06-15 | Bat Cigarettenfab Gmbh | Smoking product or smoking device with one or more ventilation openings and a method for producing the smoking product |
| DE1792651A1 (en) | 1968-09-28 | 1971-11-25 | Dynamit Nobel Ag | Process for cleaning chlorosilanes |
| BE792542A (en) | 1971-12-11 | 1973-03-30 | Degussa | PROCESS FOR THE MANUFACTURE OF METAL-FREE CHLOROSILANES DURING THE CHLORINATION OR HYDROCHLORINATION OF FERROSILICIUM |
| EP1867604B1 (en) | 2005-04-07 | 2013-05-15 | Toagosei Co., Ltd. | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
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2008
- 2008-10-17 DE DE102008042936A patent/DE102008042936A1/en not_active Withdrawn
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- 2009-10-08 US US13/119,349 patent/US8226919B2/en not_active Expired - Fee Related
- 2009-10-08 KR KR1020117007246A patent/KR101327625B1/en not_active Expired - Fee Related
- 2009-10-08 EP EP09783845A patent/EP2337765A1/en not_active Withdrawn
- 2009-10-08 JP JP2011530489A patent/JP5378528B2/en not_active Expired - Fee Related
- 2009-10-08 WO PCT/EP2009/063087 patent/WO2010043536A1/en not_active Ceased
- 2009-10-08 CN CN2009801392981A patent/CN102171143B/en not_active Expired - Fee Related
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| CN102171143A (en) | 2011-08-31 |
| JP5378528B2 (en) | 2013-12-25 |
| WO2010043536A1 (en) | 2010-04-22 |
| JP2012505139A (en) | 2012-03-01 |
| KR101327625B1 (en) | 2013-11-12 |
| DE102008042936A1 (en) | 2010-04-22 |
| CN102171143B (en) | 2013-10-16 |
| KR20110061594A (en) | 2011-06-09 |
| US20110182794A1 (en) | 2011-07-28 |
| US8226919B2 (en) | 2012-07-24 |
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