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EP2395394A3 - Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase - Google Patents

Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase Download PDF

Info

Publication number
EP2395394A3
EP2395394A3 EP11180712A EP11180712A EP2395394A3 EP 2395394 A3 EP2395394 A3 EP 2395394A3 EP 11180712 A EP11180712 A EP 11180712A EP 11180712 A EP11180712 A EP 11180712A EP 2395394 A3 EP2395394 A3 EP 2395394A3
Authority
EP
European Patent Office
Prior art keywords
phase
phase change
photosensitive material
change materials
etch masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11180712A
Other languages
German (de)
English (en)
Other versions
EP2395394A2 (fr
EP2395394B1 (fr
Inventor
William S. Wong
Robert A. Street
Stephen D. White
Robert Matusiak
Raj B. Apte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of EP2395394A2 publication Critical patent/EP2395394A2/fr
Publication of EP2395394A3 publication Critical patent/EP2395394A3/fr
Application granted granted Critical
Publication of EP2395394B1 publication Critical patent/EP2395394B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/02—Engraving; Heads therefor
    • B41C1/025—Engraving; Heads therefor characterised by means for the liquid etching of substrates for the manufacturing of relief or intaglio printing forms, already provided with resist pattern
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
    • B41M3/006—Patterns of chemical products used for a specific purpose, e.g. pesticides, perfumes, adhesive patterns; use of microencapsulated material; Printing on smoking articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0011—Pre-treatment or treatment during printing of the recording material, e.g. heating, irradiating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • ing And Chemical Polishing (AREA)
  • Thin Film Transistor (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
EP11180712.9A 2001-04-19 2002-04-19 Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase Expired - Lifetime EP2395394B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/838,684 US6872320B2 (en) 2001-04-19 2001-04-19 Method for printing etch masks using phase-change materials
EP02008866.2A EP1251398B1 (fr) 2001-04-19 2002-04-19 Méthode de structuration d'une couche à film mince en utilisant des matériaux à changement de phase

Related Parent Applications (3)

Application Number Title Priority Date Filing Date
EP02008866.2 Division 2002-04-19
EP02008866.2A Division EP1251398B1 (fr) 2001-04-19 2002-04-19 Méthode de structuration d'une couche à film mince en utilisant des matériaux à changement de phase
EP02008866.2A Division-Into EP1251398B1 (fr) 2001-04-19 2002-04-19 Méthode de structuration d'une couche à film mince en utilisant des matériaux à changement de phase

Publications (3)

Publication Number Publication Date
EP2395394A2 EP2395394A2 (fr) 2011-12-14
EP2395394A3 true EP2395394A3 (fr) 2012-01-04
EP2395394B1 EP2395394B1 (fr) 2015-04-08

Family

ID=25277794

Family Applications (3)

Application Number Title Priority Date Filing Date
EP12199718.3A Withdrawn EP2584407A1 (fr) 2001-04-19 2002-04-19 Procédé d'impression de masques de gravure utilisant des matériaux à changement de phase
EP11180712.9A Expired - Lifetime EP2395394B1 (fr) 2001-04-19 2002-04-19 Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase
EP02008866.2A Expired - Lifetime EP1251398B1 (fr) 2001-04-19 2002-04-19 Méthode de structuration d'une couche à film mince en utilisant des matériaux à changement de phase

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP12199718.3A Withdrawn EP2584407A1 (fr) 2001-04-19 2002-04-19 Procédé d'impression de masques de gravure utilisant des matériaux à changement de phase

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP02008866.2A Expired - Lifetime EP1251398B1 (fr) 2001-04-19 2002-04-19 Méthode de structuration d'une couche à film mince en utilisant des matériaux à changement de phase

Country Status (3)

Country Link
US (2) US6872320B2 (fr)
EP (3) EP2584407A1 (fr)
JP (1) JP2002348684A (fr)

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US6972261B2 (en) * 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment
JP4615197B2 (ja) * 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法
US7087444B2 (en) * 2002-12-16 2006-08-08 Palo Alto Research Center Incorporated Method for integration of microelectronic components with microfluidic devices
US6921679B2 (en) 2003-12-19 2005-07-26 Palo Alto Research Center Incorporated Electronic device and methods for fabricating an electronic device
JP4875834B2 (ja) * 2003-12-24 2012-02-15 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． マスク
US20050250052A1 (en) * 2004-05-10 2005-11-10 Nguyen Khe C Maskless lithography using UV absorbing nano particle
US20060127817A1 (en) * 2004-12-10 2006-06-15 Eastman Kodak Company In-line fabrication of curved surface transistors
EP1904412A1 (fr) * 2005-02-18 2008-04-02 AGC Flat Glass Europe SA Procédé de graver des surfaces de verre
US7459400B2 (en) * 2005-07-18 2008-12-02 Palo Alto Research Center Incorporated Patterned structures fabricated by printing mask over lift-off pattern
US7344928B2 (en) * 2005-07-28 2008-03-18 Palo Alto Research Center Incorporated Patterned-print thin-film transistors with top gate geometry
US7811638B2 (en) * 2005-12-22 2010-10-12 Palo Alto Research Center Incorporated Multi-printed etch mask process to pattern features
US7816146B2 (en) * 2005-12-27 2010-10-19 Palo Alto Research Center Incorporated Passive electronic devices
US8637138B2 (en) * 2005-12-27 2014-01-28 Palo Alto Research Center Incorporated Layered structures on thin substrates
US7784173B2 (en) * 2005-12-27 2010-08-31 Palo Alto Research Center Incorporated Producing layered structures using printing
US7365022B2 (en) * 2006-01-20 2008-04-29 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7749396B2 (en) * 2006-03-24 2010-07-06 Palo Alto Research Center Incorporated Method of manufacturing fine features for thin film transistors
US7524768B2 (en) * 2006-03-24 2009-04-28 Palo Alto Research Center Incorporated Method using monolayer etch masks in combination with printed masks
US7384568B2 (en) * 2006-03-31 2008-06-10 Palo Alto Research Center Incorporated Method of forming a darkfield etch mask
US7696096B2 (en) * 2006-10-10 2010-04-13 Palo Alto Research Center Incorporated Self-aligned masks using multi-temperature phase-change materials
US8821799B2 (en) * 2007-01-26 2014-09-02 Palo Alto Research Center Incorporated Method and system implementing spatially modulated excitation or emission for particle characterization with enhanced sensitivity
US9164037B2 (en) * 2007-01-26 2015-10-20 Palo Alto Research Center Incorporated Method and system for evaluation of signals received from spatially modulated excitation and emission to accurately determine particle positions and distances
US8968985B2 (en) 2007-03-30 2015-03-03 Palo Alto Research Center Incorporated Method and system for patterning a mask layer
US8017293B2 (en) * 2007-04-09 2011-09-13 Hewlett-Packard Development Company, L.P. Liquid toner-based pattern mask method and system
US8029964B1 (en) 2007-07-20 2011-10-04 Hewlett-Packard Development Company, L.P. Polymer-based pattern mask system and method having enhanced adhesion
US8258021B2 (en) * 2007-10-26 2012-09-04 Palo Alto Research Center Incorporated Protecting semiconducting oxides
US7955783B2 (en) * 2007-11-09 2011-06-07 Palo Alto Research Center Incorporated Lamination for printed photomask
US8551556B2 (en) 2007-11-20 2013-10-08 Palo Alto Research Center Incorporated Method for obtaining controlled sidewall profile in print-patterned structures
US20090139868A1 (en) * 2007-12-03 2009-06-04 Palo Alto Research Center Incorporated Method of Forming Conductive Lines and Similar Features
US20090155732A1 (en) * 2007-12-13 2009-06-18 Palo Alto Research Center Incorporated Method for Patterning Using Phase-Change Material
US8765226B2 (en) 2007-12-13 2014-07-01 Palo Alto Research Center Incorporated Method for patterning using phase-change material
US7755156B2 (en) * 2007-12-18 2010-07-13 Palo Alto Research Center Incorporated Producing layered structures with lamination
US7586080B2 (en) * 2007-12-19 2009-09-08 Palo Alto Research Center Incorporated Producing layered structures with layers that transport charge carriers in which each of a set of channel regions or portions operates as an acceptable switch
US8283655B2 (en) 2007-12-20 2012-10-09 Palo Alto Research Center Incorporated Producing layered structures with semiconductive regions or subregions
EP2086033A1 (fr) 2008-01-31 2009-08-05 Applied Materials, Inc. Procédé pour le revêtement d'un substrat et installation de revêtement
US8373860B2 (en) 2008-02-01 2013-02-12 Palo Alto Research Center Incorporated Transmitting/reflecting emanating light with time variation
US8629981B2 (en) 2008-02-01 2014-01-14 Palo Alto Research Center Incorporated Analyzers with time variation based on color-coded spatial modulation
ATE516693T1 (de) * 2008-11-04 2011-07-15 Rohm & Haas Elect Mat Verbesserte schmelzzusammensetzungen
US20100130014A1 (en) * 2008-11-26 2010-05-27 Palo Alto Research Center Incorporated Texturing multicrystalline silicon
US20100323102A1 (en) 2009-06-23 2010-12-23 Xerox Corporation System and Method for Preparing Conductive Structures Using Radiation Curable Phase Change Gel Inks
US8211617B2 (en) * 2009-08-17 2012-07-03 Palo Alto Research Center Incorporated Solid inks for printed masks
US8303832B2 (en) 2009-08-17 2012-11-06 Palo Alto Research Center Incorporated Solid inks for masks for printed circuit boards and other electronic devices
US8723140B2 (en) 2011-08-09 2014-05-13 Palo Alto Research Center Incorporated Particle analyzer with spatial modulation and long lifetime bioprobes
US9029800B2 (en) 2011-08-09 2015-05-12 Palo Alto Research Center Incorporated Compact analyzer with spatial modulation and multiple intensity modulated excitation sources
CN103303010B (zh) * 2012-03-13 2016-06-15 帕洛阿尔托研究中心公司 利用相变材料在基板上产生图案化的目标材料层的方法
NL2008943C2 (en) * 2012-06-06 2013-12-09 Stichting Materials Innovation Inst M2I Plasma jet etching device and method for removing an encapsulation portion of a sample via plasma jet etching.
JP5986008B2 (ja) * 2013-02-08 2016-09-06 日本電信電話株式会社 導電性布帛の製造方法、及び生体信号測定装置の製造方法
US9453139B2 (en) 2013-08-20 2016-09-27 Rohm And Haas Electronic Materials Llc Hot melt compositions with improved etch resistance
US8951825B1 (en) * 2013-09-10 2015-02-10 Palo Alto Research Center Incorporated Solar cell texturing
EP2937147B1 (fr) * 2014-04-22 2016-11-16 AKK GmbH Procédé avec un pochoir pour la structuration d'une surface par gravure
FR3052879B1 (fr) * 2016-06-21 2019-01-25 H.E.F. Systeme et methode de realisation d'un masque optique pour traitement de surface, installation et methode de traitement de surface
CN108376642B (zh) * 2018-02-02 2020-10-16 中国科学院上海光学精密机械研究所 Ge2Sb2Te5硫系相变薄膜材料正负胶两用湿法刻蚀方法

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Also Published As

Publication number Publication date
EP2395394A2 (fr) 2011-12-14
US6872320B2 (en) 2005-03-29
US20030027082A1 (en) 2003-02-06
EP2395394B1 (fr) 2015-04-08
EP1251398B1 (fr) 2016-01-13
US20030134516A1 (en) 2003-07-17
EP1251398A3 (fr) 2009-09-23
EP1251398A2 (fr) 2002-10-23
EP2584407A1 (fr) 2013-04-24
JP2002348684A (ja) 2002-12-04
US7033516B2 (en) 2006-04-25

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