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EP2137787B1 - Séparateur de tension continue - Google Patents

Séparateur de tension continue Download PDF

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Publication number
EP2137787B1
EP2137787B1 EP08748935A EP08748935A EP2137787B1 EP 2137787 B1 EP2137787 B1 EP 2137787B1 EP 08748935 A EP08748935 A EP 08748935A EP 08748935 A EP08748935 A EP 08748935A EP 2137787 B1 EP2137787 B1 EP 2137787B1
Authority
EP
European Patent Office
Prior art keywords
conductor
signal
amplifier according
isolation amplifier
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP08748935A
Other languages
German (de)
English (en)
Other versions
EP2137787A1 (fr
Inventor
Karl Schneider
Volker Hurm
Herbert Walcher
Ronny Kolbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of EP2137787A1 publication Critical patent/EP2137787A1/fr
Application granted granted Critical
Publication of EP2137787B1 publication Critical patent/EP2137787B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2007—Filtering devices for biasing networks or DC returns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/36—Isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/202—Coaxial filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters

Definitions

  • the invention relates to a DC isolator with at least one ground conductor and at least one signal-carrying conductor, which are arranged spaced apart by means of an insulator, wherein in the signal-carrying conductor, a capacitance is arranged which bridges a column in the signal conductor.
  • Such DC isolators known from BJ Minis, IEEE Transaction Microwave Theory and Techniques, Vol. 35, no. 6, June 1987, pages 597-600 , separate or superimpose the time-dependent component and the DC component of an electrical signal.
  • a further connection is provided at one or both contacts of the capacitor, to which the DC voltage component is added or removed.
  • the English name "Bias-T" is also common.
  • a prior art bias T separates the DC component (DC) and the time dependent component (RF) of an electrical signal from one another.
  • An ideal bias T is a 3-port that contains an infinite capacitance C and an infinite inductance L, cf. Fig. 1 , Gate 1 causes the superimposition of the DC and RF signal to be on or off.
  • the inductance allows only one DC signal, while the capacitance only passes one RF signal.
  • the signal path of the DC component from port 1 to port 3 is the signal path of the HF component from port 1 to port 2. If the inductance and port 3 are dispensed with, the bias DC can be used for DC separation from port 1 to port 2 ,
  • this inductance also causes an upper limit frequency f g2 .
  • a real inductance has finite dimensions. It therefore causes, like the capacitance, a discontinuity in the waveguide with the negative effects described above.
  • a real inductance always has finite values for the capacitance and the ohmic resistance. It can therefore be described as a network of several ideal components.
  • This network has at least one resonance frequency at which it has the effect of a short circuit and thereby causes at least a minimum in the transmission of the RF signal.
  • this resonant frequency must be high.
  • the resonant frequency of an inductance increases as its dimensions become smaller. This, however, the cross-sectional area of the conductors is small and the load capacity with a DC current is limited.
  • a bias T is known, which is realized by different width microstrip lines.
  • the microstrip line between Tor 1 and Tor 2 is continuously wider, whereby their impedance decreases.
  • the inductance between Tor 1 and Tor 3 is characterized by a very narrow microstrip line formed with high impedance.
  • the RF signal is prevented from passing through the narrow microstrip line to port 3.
  • the width of the microstrip line and thus the impedance decreases again to the original value. Due to the short effective line length, DC currents can be supplied at slightly higher upper limit frequencies.
  • the Bias-T has no capacity, it can not be used to separate a DC and an RF signal.
  • the object of the present invention is accordingly to provide a DC voltage isolator or a DC voltage supply with increased bandwidth. Furthermore, the object of the present invention is to provide a DC voltage supply, which compared to the prior art has an increased upper limit frequency and an increased maximum DC current.
  • the invention is achieved by a DC voltage disconnector according to claim 1.
  • the surface of the envelope will be understood as the area of the signal and ground conductors facing the insulator.
  • the envelope is the curve with minimum circumference, which completely encloses the cross section of the respective conductor.
  • An insulator is understood to mean any material which prevents a direct galvanic current flow between signal-carrying conductor and ground conductor.
  • the insulator may consist of an air gap or a protective gas.
  • the dielectric constant is preferably about 1 to about 13.
  • Particularly preferred is the use of polytetrafluoroethylene (PTFE) and / or GaAs and / or quartz and / or InP.
  • PTFE polytetrafluoroethylene
  • the bias T can be integrated in a particularly simple way monolithically with an amplifier on a substrate.
  • combinations of several materials can be used either as an alloy or as a layer structure as an insulator.
  • an enlarged signal conductor is used in the DC isolator, which is opposite to a small ground conductor.
  • the electronic components which form the capacitance C of a bias Ts can be arranged in a space region in which they do not appreciably disturb the field distribution of the propagating RF wave. This is due to the fact that the wider conductor of an RF line always completely shields the field of the propagating wave, whereas edge effects occur at the narrower conductor, so that this conductor is encompassed by the field of the propagating wave.
  • the electric field strength is accessible to calculations. With knowledge of the waveguide structure, ie the exact dimensions of the ground conductor and the signal-carrying conductor, the electric field strength can be calculated at each point of the waveguide structure. Due to the inventive dimensions of the ground conductor and the signal carrying conductor, there are areas on the signal carrying conductor where the amplitude of the electric field strength of the AC signal is lower than the amplitude of the electric field strength appearing on the surface of the ground conductor. The consideration and the comparison of the occurring at the surface of the conductor or calculated amplitudes of the electric field strength of the AC signal takes place locally. Spatially means that a cross section orthogonal to the propagation direction of the propagating AC signal is considered.
  • FIG. 3a is a cross section orthogonal to the direction of propagation of the AC signal through the waveguide structure of a DC isolator according to the invention. It can be seen that the signal-carrying conductor (in this case the upper conductor) on the side remote from the ground conductor has a region where the electric field strength is lower than can be found on the surface of the ground conductor. The surface is the interface between the conductor and the insulator surrounding it.
  • the ground conductor is encompassed by the field lines and so can be found at any point on its surface (neither on the side facing the signal-carrying conductor nor on the side facing away from the signal-carrying conductor) a point with such low amplitude the electric field strength of the AC signal as in the shielded area at the signal-carrying conductor.
  • FIG. 3a is the shielded area on the signal-carrying conductor on the side facing away from the mass-conductor / surface of the signal-carrying conductor.
  • the signal-carrying conductor is now separated for DC separation and thereby creates a gap which is bridged by a capacitor (capacitor or capacitors).
  • the gap which is introduced into the signal-carrying conductor for carrying out the DC voltage separation, disturbs the shielding capability of the signal-carrying conductor.
  • an almost field-free region again occurs, so that the effect of these stray fields is negligible.
  • a specific conductor section along the propagation direction is taken, wherein the dimensions of the waveguide structure along this section are carried out, so that the signal-carrying conductor according to the invention a shielded area for DC separation is provided.
  • the capacitors are installed for bridging the gap, ie in an area in which they do not appreciably disturb the field distribution of the propagating AC signal ( FIG. 3b ).
  • the surface of a conductor does not include surfaces of cavities encapsulated in the conductor, ie cavities encapsulated in the manner of a Faraday cage within a conductor.
  • FIG. 9 is a cross section of a conductor (L) having such a cavity (H).
  • the dashed line in the cavity (H) shown in cross-section shows the surface of the encapsulated cavity, which is not taken into account in the comparison of the electric field strengths on the surface of the signal conductor and on the surface of the ground conductor.
  • this can be expanded to the complete bias T by the signal-carrying conductor is connected on at least one side of the capacitance with an inductance and / or a ohmic resistance.
  • a direct current or a DC voltage can be superimposed on the signal conductor or dissipate such a voltage.
  • the DC voltage separator also simultaneously becomes a DC voltage supply.
  • the capacitance and / or the inductance and / or the ohmic resistance consists of exactly one component, which is a capacitor, a coil or a sheet resistance on a case-by-case basis.
  • the DC isolator can be made very compact, requires no supply voltage and is therefore conditionally robust and reliable.
  • the capacitance and / or the inductance and / or the ohmic Resistor may be formed by a network comprising semiconductor devices and / or resistors and / or capacitors and / or inductors.
  • a network comprising semiconductor devices and / or resistors and / or capacitors and / or inductors.
  • the structure of the DC isolator according to the present invention when the components used are provided with SMD housings.
  • Such components have small geometric dimensions, whereby the influence of the components on the electric field distribution around the conductor arrangement is further reduced. Since no holes for wire connections must be present, this embodiment dispenses with a further source of error at which reflections and losses of the RF signal can occur.
  • SMD components have standardized housings of similar dimensions which allow a simple and reliable construction.
  • a particularly simple integration of the DC voltage isolator according to the invention into existing environments results when the surface of the signal conductor facing the insulator increases stepwise or continuously in the direction of the capacitance and the surface of the ground conductor facing the insulator decreases stepwise or continuously.
  • the known narrow signal lines are used for much of the signal transport on the electronic circuit.
  • the opposite ground surface can continue to be performed over a large area. Only in the area of the bias T, the conditions are reversed by the signal conductor is gradually or continuously widened and the ground conductor correspondingly narrower. This is then interrupted at the widest point of the signal conductor, the resulting gap being bridged by at least one capacitance.
  • the signal line is then reduced again stepwise or continuously to the original value and the ground line is correspondingly widened for this purpose.
  • the characteristic impedance of the line remains constant over the bias T.
  • reflections and deteriorations of the RF signal are reliably avoided.
  • the dimensions of the conductors will be determined by a person skilled in the art on the basis of known formulas in individual cases, the width depending essentially on the thickness and the relative permittivity of the dielectric used.
  • the bias T according to the invention is the measurement technology, for example on gallium nitride components and the amplifier technology, since there are special demands on the bandwidth and / or the load capacity with high direct currents in these areas.
  • the DC power supply according to the invention can be integrated into an existing board layout with simple production methods according to the prior art.
  • a Amplifier module possible, which on the one hand amplifies the RF signal and simultaneously imposes a DC voltage component.
  • the monolithic integration of the DC voltage isolator with an amplifier on the same semiconductor wafer is possible. As a result, line lengths and transitions even smaller and disturbing reflections of the RF signal are avoided.
  • the entire assembly can be surrounded by an electrically conductive shield or a housing. This is particularly preferably connected to the electrical ground.
  • an electrically conductive shield or a housing This is particularly preferably connected to the electrical ground.
  • FIG. 2a shows a narrow signal line according to the prior art, which is arranged at a distance from a wide ground line. Between both conductors, a homogeneous field distribution of the propagating wave is formed. At the edge of the narrower conductor run curved field lines, which embrace the conductor. As a result, there are field lines, which emanate from the top of the narrow signal conductor.
  • FIG. 2b represents the same conductor in the prior art with a series capacitance C in cross section. It can be clearly seen that the capacity disturbs the field line course of the free conductor. This interference remains at low frequencies up to a few 100 MHz without affecting the signal quality. At high frequencies from about 10 GHz, however, the series capacity causes reflections that degrade the signal quality.
  • FIG. 3a shows a microstrip line in a DC isolator according to the present invention. This is characterized by the fact that the upper signal conductor is wider than the narrow ground conductor. The field distribution of the undisturbed microstrip line does not change as a result.
  • FIG. 3b shows the range of DC voltage supply with capacitances C and an inductance L for DC supply. These are now, unlike the prior art after FIG. 2b , arranged in the field-free region of the conductor arrangement. Thus, the field distribution also remains at the DC power supply unchanged over the undisturbed line. As a result, the occurrence of an upper limit frequency f g2 by the capacitance C and the inductance L is prevented as desired. Due to the larger cross-sectional area larger capacitors can be used with larger capacity values, so that the lower limit frequency is advantageously reduced.
  • the DC isolator is thus realized with a ground conductor and a signal-carrying conductor which are applied as a strip on a dielectric substrate.
  • Figure 3c is a cross section orthogonal to the direction of propagation of the propagating AC signal by a DC voltage disconnector according to the invention shown.
  • the ground conductor (B) is applied on one side of the dielectric substrate (S) and the signal-carrying conductor (A) on the other side of the dielectric substrate (S), wherein on the side of the signal-carrying conductor (A) remote from the substrate, a capacitor (C ) is arranged on the signal-carrying conductor (A), wherein that the signal-carrying conductor (A) is wider than the ground conductor (B).
  • Broader means that the distance connecting the two outermost points a 1 and a 2 of the metallization of the signal-carrying conductor (A) is wider than the distance that the two outermost points, b 1 and b 2 , of the metallization of the ground conductor ( B) connects.
  • FIG. 4 shows the board layout of a realized in microstrip technology DC voltage isolator according to the present invention.
  • the figure shows the surface metallization in gray and the backside metallization in black.
  • the opposite ground conductor is significantly wider than the signal conductor.
  • the DC supply is realized with three capacitors C for DC separation.
  • the DC voltage via inductances L is added or removed.
  • the signal line is significantly wider than the ground line.
  • the signal line is continuously increased until it reaches the width of the original ground conductor.
  • the ground conductor is reduced in the same area adapted for this, until it has reached the width of the original signal conductor. Since the characteristic impedance of such a microstrip array is a function of the line width, the board thickness, and the relative permittivity, the impedance of the line does not change as a result of this change in line width, as does the measurement results Fig. 5 and 6 demonstrate.
  • the field of the electromagnetic wave which is always located between the wide and the narrow conductor, thus migrates in the region of the transition from the circuit board top to the bottom. In the area of the capacitances C and the DC feeders, which are arranged on the upper side of the printed circuit board, the conductor is thus field-free.
  • the board layout out FIG. 4 was realized on a printed circuit board substrate with a thickness of 508 microns with a copper metallization on the top and bottom of each 17 microns thick.
  • the entire circuit board has a width of 4 cm and a length of 7.3 cm. Of which an area of 2 x 7.3 cm 2 with the bias-T is in use. another surface of 2 x 7.3 cm 2 carries a straight, uniformly wide reference line without further components.
  • FIG. 5a shows a measurement of the scattering parameters (S-parameters) in the range of 500 kHz to 500 MHz.
  • S-parameters are used to describe characteristics of linear time-invariant networks at high frequencies, since the variable quantities current and voltage can only be measured with great difficulty.
  • S-parameters describe in magnitude and phase the signal parts which are transmitted or reflected at different ports of a network.
  • To FIG. 5 a nearly undisturbed transmission from port 1 to port 2 of the bias Ts at a frequency of 25 MHz or higher is possible. The bandwidth limit down is given by the inductance used.
  • FIG. 5b shows the measurement of S-parameters for the frequency range from 500 MHz to 40 GHz.
  • the data of the same length microstrip line are shown without further components.
  • Both the reference line and the DC voltage supply according to the invention show a transmission which continuously drops to higher frequencies.
  • FIG. 5b indicates that the inventive bias T transports the signal with the same quality as the straight reference line without further components. The previously observed by a DC voltage supply signal degradation no longer occurs in the DC voltage disconnector according to the invention.
  • FIG. 6 shows again.
  • the graph shows the difference between the measured transmissions Fig. 5 for the reference line and the DC voltage supply to FIG. 4 , Up to a frequency of 35 GHz this difference is almost zero, from 35 GHz a difference of 2 dB can be measured.
  • FIG. 7 shows an alternative embodiment of the DC supply according to the invention in coaxial form.
  • the ground line represents the larger-area line.
  • the inner conductor arranged on the axis of symmetry is used as the ground conductor. This is surrounded by a substantially cylindrical insulator material. Outside of the insulator material, the likewise substantially cylindrical signal conductor is attached as a hollow cylindrical outer conductor.
  • the field distribution in the interior of the coaxial conductor does not differ from the field distribution according to the prior art.
  • the externally arranged signal conductor allows to attach components for DC separation and DC voltage supply or removal in the field-free area outside the coaxial conductor.
  • the outer conductor is separated and the resulting gap bridged with capacitors.
  • the gap which is introduced to carry out the DC separation in the signal-carrying conductor, disturbs the Shielding capability of the externally arranged signal-carrying conductor. Nevertheless, an almost field-free area already occurs one to two gap width away from the gap, so that the effect of this stray field is negligible.
  • the capacitors can be mounted on the outside of this or, if the outer conductor has a greater material thickness, can also be embedded in them.
  • FIG. 8 shows a further embodiment of the DC isolator according to the invention, in the form of the symmetrical strip line.
  • the signal-carrying conductor strip is embedded in a dielectric and runs parallel to two conductive layers deposited on the two opposite sides of the dielectric and serving as a grounding conductor.
  • this arrangement is now changed (see FIG. 8 ) that the two outer conductive layers (A 1 and A 2 ) deposited on the two opposite sides of the dielectric represent the signal carrying conductors and the inner conductor (B) embedded in the dielectric is the ground conductor.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microwave Amplifiers (AREA)
  • Filters And Equalizers (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Control Of Eletrric Generators (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Claims (14)

  1. Séparateur de tension continue avec au moins un conducteur de masse et avec au moins un conducteur de signal qui sont disposés à une certaine distance l'un de l'autre au moyen d'un isolant, au moins une capacité étant placée dans le conducteur de signal, laquelle capacité ponte une fente dans le conducteur de signal, caractérisé en ce que la capacité est placée dans une zone dans laquelle celle des surfaces du conducteur de signal qui est proche de l'isolant est plus grande que celle des surfaces du conducteur de masse qui est proche de l'isolant de telle sorte que le conducteur de signal protège du champ électrique d'un signal de tension alternative se propageant de sorte qu'il y a sur celle des surfaces du conducteur de signal qui est éloignée de l'isolant une zone protégée dans laquelle l'amplitude de l'intensité de champ électrique du signal de tension alternative est inférieure à l'amplitude de l'intensité de champ électrique du signal de tension alternative qui apparaît à la surface du conducteur de masse et en ce que la capacité est placée dans la zone protégée.
  2. Séparateur de tension continue selon la revendication 1, caractérisé en ce que le conducteur de signal est relié, sur au moins un côté de la capacité, à une inductance et/ou à une résistance ohmique.
  3. Séparateur de tension continue selon la revendication 2, caractérisé en ce que la capacité et/ou l'inductance et/ou la résistance ohmique sont constituées exactement d'un condensateur, d'une bobine ou d'une résistance à couche.
  4. Séparateur de tension continue selon la revendication 2, caractérisé en ce que la capacité et/ou l'inductance et/ou la résistance ohmique sont formées par un réseau qui comprend des composants semi-conducteurs et/ou des résistances et/ou des condensateurs et/ou des inductances.
  5. Séparateur de tension continue selon la revendication 4, caractérisé en ce que les composants semi-conducteurs et/ou les résistances et/ou les condensateurs et/ou les inductances sont munis de boîtiers SMD.
  6. Séparateur de tension continue selon l'une des revendications 1 à 5, caractérisé en ce que l'isolant a une constante diélectrique d'environ 1 à 13, notamment d'environ 3 à 10.
  7. Séparateur de tension continue selon l'une des revendications 1 à 6, caractérisé en ce que celle des surfaces du conducteur de signal qui est proche de l'isolant augmente en direction de la capacité et celle des surfaces du conducteur de masse qui est proche de l'isolant diminue.
  8. Séparateur de tension continue selon l'une des revendications 1 à 7, caractérisé en ce que le conducteur de masse et le conducteur de signal sont placés sur des côtés opposés d'un isolant plan.
  9. Séparateur de tension continue selon l'une des revendications 1 à 7, caractérisé en ce que le conducteur de masse est entouré par un isolant cylindrique qui est entouré quant à lui par un conducteur de signal cylindrique.
  10. Séparateur de tension continue selon la revendication 9, caractérisé en ce que le conducteur de signal cylindrique est composé d'un treillis de fil métallique.
  11. Séparateur de tension continue selon l'une des revendications 1 à 10, caractérisé en ce que le ou les conducteurs de masse et le ou les conducteurs de signal sont entourés respectivement par un autre conducteur.
  12. Amplificateur avec un séparateur de tension continue selon l'une des revendications 1 à 11.
  13. Amplificateur selon la revendication 12, caractérisé en ce qu'il contient du GaN et/ou du GaAs.
  14. Utilisation d'un séparateur de tension continue selon l'une des revendications 1 à 11 en technique de mesure.
EP08748935A 2007-04-16 2008-04-16 Séparateur de tension continue Not-in-force EP2137787B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007018120A DE102007018120A1 (de) 2007-04-16 2007-04-16 Gleichspannungstrenner
PCT/EP2008/003024 WO2008125341A1 (fr) 2007-04-16 2008-04-16 Séparateur de tension continue

Publications (2)

Publication Number Publication Date
EP2137787A1 EP2137787A1 (fr) 2009-12-30
EP2137787B1 true EP2137787B1 (fr) 2010-07-21

Family

ID=39636917

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08748935A Not-in-force EP2137787B1 (fr) 2007-04-16 2008-04-16 Séparateur de tension continue

Country Status (9)

Country Link
US (1) US20100182106A1 (fr)
EP (1) EP2137787B1 (fr)
JP (1) JP2010524414A (fr)
KR (1) KR20100007859A (fr)
CN (1) CN101657933A (fr)
AT (1) ATE475205T1 (fr)
CA (1) CA2683690A1 (fr)
DE (2) DE102007018120A1 (fr)
WO (1) WO2008125341A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019027949A1 (fr) * 2017-08-02 2019-02-07 Avx Corporation Résistance de polarisation de ligne de transmission

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2189942A (en) 1986-04-30 1987-11-04 Philips Electronic Associated Transmission-line bias T
US4987391A (en) * 1990-03-14 1991-01-22 Kusiak Jr Michael Antenna cable ground isolator
JP2003188047A (ja) * 2001-12-14 2003-07-04 Mitsubishi Electric Corp Ｄｃブロック回路および通信装置
US6798310B2 (en) * 2003-01-07 2004-09-28 Agilent Technologies, Inc. Coaxial DC block
DE10308211A1 (de) 2003-02-25 2004-09-09 Shf Communication Technologies Ag Element zur Gleichspannungstrennung in Leitungen, insbesondere bei Übertragung von Frequenzen im Bereich von 5 GHz bis 110 GHz
JP3966865B2 (ja) * 2004-04-08 2007-08-29 富士通株式会社 Ｄｃカット構造
US7385459B2 (en) * 2005-09-08 2008-06-10 Northrop Grumman Corporation Broadband DC block impedance matching network

Also Published As

Publication number Publication date
ATE475205T1 (de) 2010-08-15
CN101657933A (zh) 2010-02-24
WO2008125341A1 (fr) 2008-10-23
KR20100007859A (ko) 2010-01-22
DE502008000996D1 (de) 2010-09-02
EP2137787A1 (fr) 2009-12-30
CA2683690A1 (fr) 2008-10-23
US20100182106A1 (en) 2010-07-22
JP2010524414A (ja) 2010-07-15
DE102007018120A1 (de) 2008-10-30

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