EP1908121A4 - DRAIN-ADVANCED MOSFETS WITH DIODE CLAMPING - Google Patents

DRAIN-ADVANCED MOSFETS WITH DIODE CLAMPING

Info

Publication number: EP1908121A4
Authority: EP; European Patent Office
Prior art keywords: drain; diode clamping; mosfets; advanced; advanced mosfets
Prior art date: 2005-07-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

EP05772304A

Other languages

German (de)

French (fr)

Other versions

EP1908121A1 (en

Inventor

Sameer Pendharkar

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-07-18

Filing date

2005-07-18

Publication date

2009-09-30

2005-07-18 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

2008-04-09 Publication of EP1908121A1 publication Critical patent/EP1908121A1/en

2009-09-30 Publication of EP1908121A4 publication Critical patent/EP1908121A4/en

Status Ceased legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/151—LDMOS having built-in components
- H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
- H10D30/0285—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using formation of insulating sidewall spacers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

EP05772304A 2005-07-18 2005-07-18 DRAIN-ADVANCED MOSFETS WITH DIODE CLAMPING Ceased EP1908121A4 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/US2005/025396 WO2007011354A1 (en)	2005-07-18	2005-07-18	Drain-extended mosfets with diode clamp

Publications (2)

Publication Number	Publication Date
EP1908121A1 EP1908121A1 (en)	2008-04-09
EP1908121A4 true EP1908121A4 (en)	2009-09-30

Family

ID=37669121

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP05772304A Ceased EP1908121A4 (en)	2005-07-18	2005-07-18	DRAIN-ADVANCED MOSFETS WITH DIODE CLAMPING

Country Status (4)

Country	Link
EP (1)	EP1908121A4 (en)
JP (1)	JP2009502041A (en)
KR (1)	KR100985373B1 (en)
WO (1)	WO2007011354A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009059949A (en) *	2007-08-31	2009-03-19	Sharp Corp	Semiconductor device and method for manufacturing semiconductor device
US7838940B2 (en)	2007-12-04	2010-11-23	Infineon Technologies Ag	Drain-extended field effect transistor
KR100943504B1 (en)	2007-12-31	2010-02-22	주식회사 동부하이텍	Method of manufacturing MOSPF
JP5534298B2 (en) *	2009-06-16	2014-06-25	ルネサスエレクトロニクス株式会社	Semiconductor device
US8344472B2 (en) *	2010-03-30	2013-01-01	Freescale Semiconductor, Inc.	Semiconductor device and method
KR101302108B1 (en) *	2011-12-30	2013-08-30	주식회사 동부하이텍	Drain exteneded mos transistor and method for fabricating the same
JP5960445B2 (en) *	2012-02-23	2016-08-02	ラピスセミコンダクタ株式会社	Semiconductor device
JP2013247188A (en) *	2012-05-24	2013-12-09	Toshiba Corp	Semiconductor device
US9129990B2 (en) *	2012-06-29	2015-09-08	Freescale Semiconductor, Inc.	Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
KR101694091B1 (en) *	2016-03-03	2017-01-17	강희복	A power supply circuit system using a negative threshold five-terminal NMOS FET device for Flyback inductor schematic application
KR101694092B1 (en) *	2016-03-03	2017-01-17	강희복	A power supply circuit system using a negative threshold five-terminal NMOS FET device for three-phase Flyback inductor schematic application
JP6920137B2 (en) *	2017-08-31	2021-08-18	ルネサスエレクトロニクス株式会社	Semiconductor devices and their manufacturing methods
CN112713182B (en) *	2020-12-29	2022-06-28	浙大城市学院	A silicon carbide cell-level power integrated chip structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20030173624A1 (en) *	2002-02-23	2003-09-18	Fairchild Korea Semiconductor Ltd.	High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) *	2003-02-18	2004-08-19	Kabushiki Kaisha Toshiba	Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0936674B1 (en) *	1998-02-10	2006-04-26	STMicroelectronics S.r.l.	Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate
US6924531B2 (en) *	2003-10-01	2005-08-02	Taiwan Semiconductor Manufacturing Company, Ltd.	LDMOS device with isolation guard rings

2005
- 2005-07-18 KR KR1020087003859A patent/KR100985373B1/en not_active Expired - Fee Related
- 2005-07-18 EP EP05772304A patent/EP1908121A4/en not_active Ceased
- 2005-07-18 WO PCT/US2005/025396 patent/WO2007011354A1/en not_active Ceased
- 2005-07-18 JP JP2008522752A patent/JP2009502041A/en not_active Abandoned

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20030173624A1 (en) *	2002-02-23	2003-09-18	Fairchild Korea Semiconductor Ltd.	High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) *	2003-02-18	2004-08-19	Kabushiki Kaisha Toshiba	Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARTHASARATHY V ET AL: "Drain profile engineering of resurf LDMOS devices for ESD ruggedness", PROCEEDINGS OF THE 14TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ISPSD'02. SANTA FE, NM, JUNE 4 - 7, 2002; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 4 June 2002 (2002-06-04), pages 265 - 268, XP010591617, ISBN: 978-0-7803-7318-1 *
See also references of WO2007011354A1 *

Also Published As

Publication number	Publication date
EP1908121A1 (en)	2008-04-09
KR20080033423A (en)	2008-04-16
JP2009502041A (en)	2009-01-22
WO2007011354A1 (en)	2007-01-25
KR100985373B1 (en)	2010-10-04

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DE602006011904D1 (en)	2010-03-11	EPICCLIC DRIVE SYSTEM WITH FLEXPINS
DE602006008118D1 (en)	2009-09-10	DISTANCE ARRANGEMENT WITH DISTALER RELEASE
DE112006001254A5 (en)	2008-02-14	Light-emitting component
KR100970986B9 (en)	2021-12-21	plastic fasteners
DE502006009127D1 (en)	2011-04-28	PLASTIC METAL CONNECTION
DE502006007895D1 (en)	2010-10-28	JIG
DE502006003052D1 (en)	2009-04-23	Hand tool with wobbling device
DE602006005955D1 (en)	2009-05-07	CLAMP
EP1908121A4 (en)	2009-09-30	DRAIN-ADVANCED MOSFETS WITH DIODE CLAMPING
ITFI20050094A1 (en)	2006-11-07	PERFECTED OPERCULATOR
EP1875777A4 (en)	2010-09-01	LIGHT-EMITTING COMPONENT
DE502006007719D1 (en)	2010-10-07	Rectoscope with light-emitting elements
DE602006006605D1 (en)	2009-06-18	Injection line
BRPI0618419A2 (en)	2016-09-06	quick return
DE602005017857D1 (en)	2010-01-07	Component with cooling arrangement
DE112006003063A5 (en)	2008-12-04	jig
DE502006002069D1 (en)	2008-12-24	JIG
DE602005009139D1 (en)	2008-10-02	Router with special features
DE502006000618D1 (en)	2008-05-29	injection
UA13585S (en)	2007-02-15	CLAMP
AT502122A3 (en)	2008-02-15	LUMINAIRES WITH FIXING DEVICE
DE502006009286D1 (en)	2011-05-26	Linear clamping system

Legal Events

Date	Code	Title	Description
2008-03-07	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2008-04-09	17P	Request for examination filed	Effective date: 20080218
2008-04-09	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FR GB
2008-08-27	RBV	Designated contracting states (corrected)	Designated state(s): DE FR GB
2009-09-30	A4	Supplementary search report drawn up and despatched	Effective date: 20090827
2009-12-02	17Q	First examination report despatched	Effective date: 20091029
2012-07-25	DAX	Request for extension of the european patent (deleted)
2017-09-25	REG	Reference to a national code	Ref country code: DE Ref legal event code: R003
2018-02-09	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED
2018-03-14	18R	Application refused	Effective date: 20170925