EP1716578A4 - NANOMETRIC METAL PATE FOR INTERCONNECTION AND METHOD OF USE - Google Patents
NANOMETRIC METAL PATE FOR INTERCONNECTION AND METHOD OF USEInfo
- Publication number
- EP1716578A4 EP1716578A4 EP05723019A EP05723019A EP1716578A4 EP 1716578 A4 EP1716578 A4 EP 1716578A4 EP 05723019 A EP05723019 A EP 05723019A EP 05723019 A EP05723019 A EP 05723019A EP 1716578 A4 EP1716578 A4 EP 1716578A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- interconnection
- nanometric metal
- pate
- metal pate
- nanometric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27332—Manufacturing methods by local deposition of the material of the layer connector in solid form using a powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1453—Applying the circuit pattern before another process, e.g. before filling of vias with conductive paste, before making printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Electric Cables (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54513904P | 2004-02-18 | 2004-02-18 | |
| PCT/US2005/004567 WO2005079353A2 (en) | 2004-02-18 | 2005-02-14 | Nanoscale metal paste for interconnect and method of use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1716578A2 EP1716578A2 (en) | 2006-11-02 |
| EP1716578A4 true EP1716578A4 (en) | 2009-11-11 |
Family
ID=34886114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP05723019A Withdrawn EP1716578A4 (en) | 2004-02-18 | 2005-02-14 | NANOMETRIC METAL PATE FOR INTERCONNECTION AND METHOD OF USE |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1716578A4 (en) |
| JP (1) | JP2007527102A (en) |
| KR (1) | KR20070033329A (en) |
| CN (1) | CN1961381A (en) |
| WO (1) | WO2005079353A2 (en) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4770379B2 (en) * | 2005-10-13 | 2011-09-14 | 富士電機株式会社 | Metal member joining method and assembly jig thereof |
| JP4638382B2 (en) * | 2006-06-05 | 2011-02-23 | 田中貴金属工業株式会社 | Joining method |
| CN100435366C (en) * | 2006-06-08 | 2008-11-19 | 天津大学 | Method for connecting high-power LEDs with nano-silver solder paste low-temperature sintering package |
| DE102006047395A1 (en) * | 2006-10-06 | 2008-04-10 | Robert Bosch Gmbh | Method for producing a sensor component and sensor component |
| US7952261B2 (en) | 2007-06-29 | 2011-05-31 | Bayer Materialscience Ag | Electroactive polymer transducers for sensory feedback applications |
| US8304062B2 (en) * | 2007-07-20 | 2012-11-06 | Fry's Metals, Inc. | Electrical conductors and methods of making and using them |
| DE102007022338B4 (en) * | 2007-07-26 | 2013-12-05 | Semikron Elektronik Gmbh & Co. Kg | Manufacturing method for a power semiconductor device with metal contact layer |
| JP2009138243A (en) * | 2007-12-07 | 2009-06-25 | Dowa Electronics Materials Co Ltd | Silver fine powder with excellent affinity for polar medium, silver ink, and method for producing silver particle |
| WO2009090915A1 (en) | 2008-01-17 | 2009-07-23 | Nichia Corporation | Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for manufacturing light-emitting device |
| JP5642336B2 (en) * | 2008-02-06 | 2014-12-17 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
| US8253233B2 (en) * | 2008-02-14 | 2012-08-28 | Infineon Technologies Ag | Module including a sintered joint bonding a semiconductor chip to a copper surface |
| RU2389095C2 (en) * | 2008-03-25 | 2010-05-10 | ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ УНИТАРНОЕ ПРЕДПРИЯТИЕ "Научно-исследовательский институт "ВОЛГА" (ФГУП "НИИ "ВОЛГА") | Electroconductive paste |
| US8421247B2 (en) * | 2008-04-30 | 2013-04-16 | Hitachi Chemical Company, Ltd. | Connecting material having metallic particles of an oxygen state ratio and size and semiconductor device having the connecting material |
| US7682875B2 (en) * | 2008-05-28 | 2010-03-23 | Infineon Technologies Ag | Method for fabricating a module including a sintered joint |
| US20100000762A1 (en) | 2008-07-02 | 2010-01-07 | Applied Nanotech Holdings, Inc. | Metallic pastes and inks |
| DE102008034946B4 (en) * | 2008-07-26 | 2016-05-19 | Semikron Elektronik Gmbh & Co. Kg | Production method of a noble metal compound |
| DE102008039828A1 (en) * | 2008-08-27 | 2010-03-04 | W.C. Heraeus Gmbh | Control of the porosity of metal pastes for the pressure-free low-temperature sintering process |
| US7754533B2 (en) | 2008-08-28 | 2010-07-13 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
| DE102008055137A1 (en) | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Electrical or electronic composite component and method for producing an electrical or electronic composite component |
| DE102008055134A1 (en) | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Electrical or electronic composite component and method for producing an electrical or electronic composite component |
| DE102009008926B4 (en) | 2009-02-13 | 2022-06-15 | Danfoss Silicon Power Gmbh | Process for creating a high-temperature and temperature-change-resistant connection of a semiconductor component with a connection partner and a contact lug using a temperature-loading process |
| EP2239793A1 (en) | 2009-04-11 | 2010-10-13 | Bayer MaterialScience AG | Electrically switchable polymer film structure and use thereof |
| DE102009022660B3 (en) * | 2009-05-26 | 2010-09-16 | Semikron Elektronik Gmbh & Co. Kg | Attachment of a component to a substrate and / or a connection element to the component and / or to the substrate by pressure sintering |
| DE102009040076A1 (en) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metal paste with oxidizing agent |
| DE102009040078A1 (en) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metal paste with CO precursors |
| US8637379B2 (en) | 2009-10-08 | 2014-01-28 | Infineon Technologies Ag | Device including a semiconductor chip and a carrier and fabrication method |
| DE102010001666A1 (en) | 2010-02-08 | 2011-08-11 | Robert Bosch GmbH, 70469 | Electrical or electronic composite component e.g. junction FET (JFET) has connection layer and interlayer whose active compound is arranged on attaching layers along opposite side of sinter layers |
| ES2495390T3 (en) | 2010-03-12 | 2014-09-17 | Clariant International Ag | Production of conductive surface coatings with dispersion with electrostatically stabilized silver nanoparticles |
| US20110256383A1 (en) | 2010-04-01 | 2011-10-20 | Bayer Materialscience Ag | Polymer material comprising a polymer and silver nanoparticles dispersed herein |
| JP5861049B2 (en) * | 2010-04-22 | 2016-02-16 | パナソニックIpマネジメント株式会社 | Solid electrolytic capacitor and solid electrolytic capacitor manufacturing method |
| DE102010044326A1 (en) * | 2010-09-03 | 2012-03-08 | Heraeus Materials Technology Gmbh & Co. Kg | Use of aliphatic hydrocarbons and paraffins as solvents in silver pastes |
| WO2012061511A2 (en) | 2010-11-03 | 2012-05-10 | Fry's Metals, Inc. | Sintering materials and attachment methods using same |
| TWI542269B (en) | 2011-03-01 | 2016-07-11 | 拜耳材料科學股份有限公司 | Automated manufacturing processes for producing deformable polymer devices and films |
| TW201250288A (en) | 2011-03-22 | 2012-12-16 | Bayer Materialscience Ag | Electroactive polymer actuator lenticular system |
| CN102290117B (en) * | 2011-04-25 | 2013-03-06 | 深圳市唯特偶新材料股份有限公司 | Low temperature-sintered nano silver paste and preparation method thereof |
| FR2978301B1 (en) * | 2011-07-18 | 2013-08-02 | Renault Sa | METHOD FOR ASSEMBLING AN ULTRASONIC TRANSDUCER AND TRANSDUCER OBTAINED BY THE METHOD |
| EP2560468A1 (en) | 2011-08-19 | 2013-02-20 | ABB Research Ltd. | Method of connecting elements of a plurality of elements to one another |
| DE102011083893A1 (en) * | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Starting material of a sintered compound and method for producing the sintered compound |
| DE102011083926A1 (en) * | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Layer composite of a carrier film and a layer arrangement comprising a sinterable layer of at least one metal powder and a solder layer |
| CN103170617B (en) * | 2011-12-23 | 2016-04-27 | 比亚迪股份有限公司 | The sintering method that a kind of modification Ag cream and application thereof and power model chips are connected with matrix |
| US9888568B2 (en) | 2012-02-08 | 2018-02-06 | Crane Electronics, Inc. | Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module |
| WO2013142552A1 (en) | 2012-03-21 | 2013-09-26 | Bayer Materialscience Ag | Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices |
| KR20150031285A (en) | 2012-06-18 | 2015-03-23 | 바이엘 인텔렉쳐 프로퍼티 게엠베하 | Stretch frame for stretching process |
| WO2014066576A1 (en) | 2012-10-24 | 2014-05-01 | Bayer Intellectual Property Gmbh | Polymer diode |
| CN103137831A (en) * | 2013-02-21 | 2013-06-05 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode (LED) lamp and encapsulation method thereof |
| JP2013151753A (en) * | 2013-03-04 | 2013-08-08 | Dowa Electronics Materials Co Ltd | Silver micropowder excellent in affinity for polar medium, and silver ink |
| JP6185269B2 (en) * | 2013-03-27 | 2017-08-23 | 京セラ株式会社 | Electronic device and method for manufacturing electronic device |
| EP3111451A4 (en) * | 2014-02-24 | 2018-02-14 | Henkel AG & Co. KGaA | Sinterable metal particles and the use thereof in electronics applications |
| DE102014104272A1 (en) | 2014-03-26 | 2015-10-01 | Heraeus Deutschland GmbH & Co. KG | Carrier and clip each for a semiconductor element, method of manufacture, use and sintering paste |
| US20160064630A1 (en) * | 2014-08-26 | 2016-03-03 | Texas Instruments Incorporated | Flip chip led package |
| US9230726B1 (en) | 2015-02-20 | 2016-01-05 | Crane Electronics, Inc. | Transformer-based power converters with 3D printed microchannel heat sink |
| FR3041210B1 (en) * | 2015-09-15 | 2017-09-15 | Sagem Defense Securite | SILVER FRITTAGE ASSEMBLY METHOD WITHOUT PRESSURE |
| CN108603295A (en) | 2016-01-29 | 2018-09-28 | 惠普发展公司,有限责任合伙企业 | The particle product of metal connection |
| CN106271200B (en) * | 2016-08-23 | 2019-06-07 | 天津大学 | The preparation method of the Ag-Pd nano-solder paste of resistance to Ag migration under a kind of hot environment |
| US10492297B2 (en) | 2017-02-22 | 2019-11-26 | Xerox Corporation | Hybrid nanosilver/liquid metal ink composition and uses thereof |
| CN107175433A (en) * | 2017-04-19 | 2017-09-19 | 天津大学 | A kind of preparation method of low sintering tin dope nano mattisolda |
| CN107252891A (en) * | 2017-05-08 | 2017-10-17 | 上海大学 | The method that two-step sintering nanometer silver paste prepares microelectronic interconnection material |
| US11352527B2 (en) | 2017-11-13 | 2022-06-07 | Nitto Denko Corporation | Sinter-bonding composition, sinter-bonding sheet and dicing tape with sinter-bonding sheet |
| CN109277722B (en) * | 2018-10-06 | 2021-04-30 | 天津大学 | Preparation method of Ag-Si nano soldering paste for improving silver electrochemical migration |
| TW202100266A (en) * | 2019-03-22 | 2021-01-01 | 日商播磨化成股份有限公司 | Metal paste, bonding method and method for producing bonded body |
| CN110380078A (en) * | 2019-07-19 | 2019-10-25 | 哈尔滨工业大学 | Low-temperature sealing structure and method for sealing for metallic support type solid oxide fuel cell |
| CN112996338B (en) * | 2019-12-12 | 2025-03-25 | 秦文隆 | Ultra-thin temperature balancing plate and manufacturing method thereof |
| CN113964050B (en) * | 2021-10-18 | 2025-01-24 | 中冶赛迪工程技术股份有限公司 | A pressure-free, low-temperature sintering method and its application |
| CN114664676A (en) * | 2022-03-16 | 2022-06-24 | 上海音特电子有限公司 | Method for welding power transient suppression diode by using nano silver paste |
| CN114864134A (en) * | 2022-05-31 | 2022-08-05 | 深圳市百柔新材料技术有限公司 | Nano-alloy composite low-temperature slurry, preparation method and application thereof |
| CN114974656A (en) * | 2022-05-31 | 2022-08-30 | 深圳市百柔新材料技术有限公司 | Nano composite low-temperature slurry, preparation method and application thereof |
| CN116092720A (en) * | 2022-12-02 | 2023-05-09 | 广东华智芯电子科技有限公司 | Silver-containing composite slurry, preparation method thereof, bonding material and application |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07126556A (en) * | 1993-11-04 | 1995-05-16 | Tatsuta Electric Wire & Cable Co Ltd | Conductive resin composition |
| WO2004005413A1 (en) * | 2002-07-03 | 2004-01-15 | Nanopowders Industries Ltd. | Low sintering temperatures conductive nano-inks and a method for producing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4333966A (en) * | 1979-07-30 | 1982-06-08 | Graham Magnetics, Inc. | Method of forming a conductive metal pattern |
| US5882722A (en) * | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
| US6114413A (en) * | 1997-07-10 | 2000-09-05 | International Business Machines Corporation | Thermally conducting materials and applications for microelectronic packaging |
| US5855820A (en) * | 1997-11-13 | 1999-01-05 | E. I. Du Pont De Nemours And Company | Water based thick film conductive compositions |
| JP2001135138A (en) * | 1999-10-29 | 2001-05-18 | Matsushita Electric Ind Co Ltd | Conductor paste |
| JP3764349B2 (en) * | 2001-05-07 | 2006-04-05 | ハリマ化成株式会社 | Method of forming an alternative conductive metal film for plating using metal fine particle dispersion |
-
2005
- 2005-02-14 KR KR1020067019146A patent/KR20070033329A/en not_active Ceased
- 2005-02-14 WO PCT/US2005/004567 patent/WO2005079353A2/en not_active Ceased
- 2005-02-14 JP JP2006554151A patent/JP2007527102A/en active Pending
- 2005-02-14 EP EP05723019A patent/EP1716578A4/en not_active Withdrawn
- 2005-02-14 CN CNA2005800105708A patent/CN1961381A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07126556A (en) * | 1993-11-04 | 1995-05-16 | Tatsuta Electric Wire & Cable Co Ltd | Conductive resin composition |
| WO2004005413A1 (en) * | 2002-07-03 | 2004-01-15 | Nanopowders Industries Ltd. | Low sintering temperatures conductive nano-inks and a method for producing the same |
Non-Patent Citations (3)
| Title |
|---|
| WONG WAI KWAN ET AL: "Low temperature sintering process for deposition of nano-structured metal for nano IC packaging", ELECTRONICS PACKAGING TECHNOLOGY, 2003 5TH CONFERENCE (EPTC 2003) DEC. 10-12, 2003, PISCATAWAY, NJ, USA,IEEE, 10 December 2003 (2003-12-10), pages 551 - 556, XP010687352, ISBN: 978-0-7803-8205-3 * |
| ZHANG Z ET AL: "PRESSURE-ASSISTED LOW-TEMPERATURE SINTERING OF SILVER PASTE AS AN ALTERNATIVE DIE-ATTACH SOLUTION TO SOLDER REFLOW", IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 25, no. 4, 1 October 2002 (2002-10-01), pages 279 - 283, XP001143650, ISSN: 1523-334X * |
| ZHANG ZHIYE ET AL: "NANOSCALE SILVER SINTERING FOR HIGH-TEMPERATURE PACKAGING OF SEMICONDUCTOR DEVICES", MATERIALS PROCESSING AND MANUFACTURING DIVISION. GLOBAL SYMPOSIUM SURFACES AND INTERFACES IN NANOSTRUCTURED MATERIALS AND TRENDS IN LIGA, MINIATURIZATION AND NANOSCALE MATERIALS, 14-18 MARCH, CHARLOTTE, NC, US, 2004, TMS, WARRENDALE, PA, US, pages 129 - 135, XP001248317 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070033329A (en) | 2007-03-26 |
| WO2005079353A2 (en) | 2005-09-01 |
| WO2005079353A3 (en) | 2005-12-08 |
| JP2007527102A (en) | 2007-09-20 |
| CN1961381A (en) | 2007-05-09 |
| EP1716578A2 (en) | 2006-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1716578A4 (en) | NANOMETRIC METAL PATE FOR INTERCONNECTION AND METHOD OF USE | |
| EP1815507A4 (en) | COPPER INTERCONNECTION WIRING AND METHOD OF FORMING THE SAME | |
| EP1734986A4 (en) | PROCESS FOR MODULATION OF APPETIT | |
| FR2876011B1 (en) | METHOD FOR MAKE-UP A SUPPORT AND KIT FOR IMPLEMENTING SAID METHOD | |
| EP1782263A4 (en) | PRODUCTION OF SWPM-MDT WORKFLOW | |
| EP1736263A4 (en) | HANGING STRUCTURE FOR REMOVABLE CHIP | |
| EP2079561A4 (en) | FASTENERS AND SPACING RINGS FOR THE SAME | |
| FR2871902B1 (en) | METHOD AND INSTALLATION OF ACOUSTO-OPTICAL IMAGING | |
| EP1901733A4 (en) | USE OF HUPERZINE FOR PATHOLOGIES | |
| FR13C0044I2 (en) | USE OF DIHYDROIMIDAZOLONES FOR THE TREATMENT OF CANINE EPILEPSY | |
| EP1755596A4 (en) | PROCESS FOR THE PREPARATION OF ATAZANAVIR BISULFATE AND NEW FORMS | |
| EP1899198A4 (en) | LIBERABLE RETENTION MECHANISM AND METHOD OF USE | |
| FR2875971B1 (en) | ALTERNATIVE-CONTINUOUS CONVERTER FOR AERONAUTICS | |
| EP1663255A4 (en) | COMPOSITIONS OF WITHANAMIDE AND WITHANOLIDE AND METHOD OF USE THEREOF | |
| FR2871060B1 (en) | SUPPRESSOR AGENT FOR INFLAMMATION AND METHOD USING THE SAME | |
| FR2872374B1 (en) | INTELLIGENT BOX FOR OUTSIDE | |
| FR2879914B1 (en) | INTESTINAL RETRACTOR RETRACTOR FOR COELIOSCOPIC SURGERY | |
| FR2846376B1 (en) | MAINTENANCE AND INHIBITION PLATINUM FOR THRUST INVERTER | |
| EP1974370A4 (en) | MICROGRAVIDE COMPOSITION AND METHOD OF USE | |
| EP1582493A4 (en) | CABLE FOR ELEVATOR AND ELEVATOR EQUIPMENT | |
| EP1750513A4 (en) | USE OF GPCR54 LIGANDS FOR THE TREATMENT OF INFERTILITY | |
| FR2835851B1 (en) | COMPOSITION FOR THE TREATMENT OF MAGNESIUM ALLOYS | |
| ITPD20030151A1 (en) | SPEED REDUCER | |
| FR2863362B1 (en) | METHOD OF JUDGING PRACTICAL CONDITIONS FOR THE USE OF AN ORDINATED ALLOY IN IRRADIATION ENVIRONMENTS | |
| EP1657207A4 (en) | WINCH OF LOW THICKNESS FOR ELEVATOR |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20060818 |
|
| AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR |
|
| DAX | Request for extension of the european patent (deleted) | ||
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H05K 3/32 20060101ALI20090903BHEP Ipc: H01B 1/22 20060101ALI20090903BHEP Ipc: H01L 21/60 20060101AFI20090903BHEP |
|
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20090909 |
|
| 17Q | First examination report despatched |
Effective date: 20110315 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20110927 |