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EP1504253A2 - Dispositif capteur destine a la mesure d'une concentration de gaz - Google Patents

Dispositif capteur destine a la mesure d'une concentration de gaz

Info

Publication number
EP1504253A2
EP1504253A2 EP02779214A EP02779214A EP1504253A2 EP 1504253 A2 EP1504253 A2 EP 1504253A2 EP 02779214 A EP02779214 A EP 02779214A EP 02779214 A EP02779214 A EP 02779214A EP 1504253 A2 EP1504253 A2 EP 1504253A2
Authority
EP
European Patent Office
Prior art keywords
sensor arrangement
gas
arrangement according
electrode structures
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02779214A
Other languages
German (de)
English (en)
Inventor
Heribert Weber
Christian Krummel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragon AG
Original Assignee
Paragon AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragon AG filed Critical Paragon AG
Publication of EP1504253A2 publication Critical patent/EP1504253A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus

Definitions

  • the invention relates to a sensor arrangement for measuring a gas concentration, in particular of carbon monoxide (CO), hydrogen (H 2 ), nitrogen oxide (NO x ) and / or hydrocarbons.
  • a sensor arrangement for measuring a gas concentration, in particular of carbon monoxide (CO), hydrogen (H 2 ), nitrogen oxide (NO x ) and / or hydrocarbons.
  • Integrated sensor arrangements with a high sensitivity to these gases generally indicate ! a gas-sensitive layer of metal oxides, which is formed by means of heat conductor structures on z. B. heated several hundred degrees Celsius and evaluated electrically, mostly resistively, via electrode structures.
  • the electrode layers are conventionally structured laterally in such a way that an interdigital finger structure results, in which the two electrodes intermesh like a comb.
  • the gas-sensitive layer is provided in a meandering manner, so that the large electrical surfaces of the electrodes result in a low total electrical resistance between the electrodes.
  • a high level of integration is desired for cost-effective production with little material and small space requirements. Furthermore, with smaller dimensions of the gas-sensitive layer between the electrodes, the number of grain boundaries within the gas-sensitive material is reduced, so that more precise measurements are possible.
  • the distances between the electrodes are determined by the structural accuracy of the semiconductor process used. With known ⁇ -mechanics this is above 1 ⁇ m, with CMOS processes below 1 ⁇ m. However, higher integration is difficult to achieve.
  • writing processes for example using an electron beam imagesetter, structure widths can also be realized significantly below 1 ⁇ m; however, such methods are operationally complex and costly.
  • the sensor arrangement according to the invention with the features of claim 1 offers, in particular, the advantage that it can be produced with relatively little effort, in particular also inexpensively, and nevertheless enables precise measurements. 'Advantageously, in this case obtained multipara- metrale sensor signals.
  • the electrodes are thus designed as electrode structures in vertically spaced electrode layers. Their contact distance is thus determined by the layer thickness of the one or more insulation layers lying between them.
  • layer thicknesses and thus electrode spacings of a few nm can be realized using common methods, for example CVD, PVD.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • essential disadvantages of the conventional only laterally structured sensor arrangements can be partially or completely avoided and also small contact distances can be achieved with relatively little effort and conventional technologies.
  • a high level of integration can be achieved with a small space requirement and low material expenditure.
  • nanostructured materials can advantageously be used for the gas-sensitive layer, in which only a few crystallites or a single crystallite is provided between the electrodes, so that better measuring properties, in particular with regard to the sensitivity and selectivity of the gases and gas concentration ranges in question, can be achieved. Due to the achievable low layer thicknesses of the gas sensitive layer, which nevertheless has a large surface against good dynamic response can also be achieved.
  • Another advantage according to the invention is that in addition to the vertical structuring, a lateral structuring can be formed. As a result, higher integration can be achieved with less space.
  • the additional formation of further electrode layers can on the one hand increase the accuracy of the measurement; in particular, the selectivity can be increased by comparing the various signals and further data, in particular statements about the state of the sensor, for example its age and the degree of its poisoning, can be obtained.
  • a free space in a central area of the substrate allows a membrane which is largely decoupled thermally from the substrate to be formed from the insulation layers, the gas-sensitive layer, the electrodes and the heat conductor structure.
  • the insulation layers can e.g. B. from silicon nitride (Si 3 N 4 ), silicon oxide, silicon oxynitride, silicon carbide or combinations of these materials, whereby an inexpensive formation of a membrane under tension is achieved.
  • the thermal insulation can also be provided by a cavity in the substrate or the use of a layer of porous substrate, eg. B. porous silicon can be achieved
  • FIG. 1 shows a vertical section through a sensor arrangement according to an embodiment of the invention
  • FIG. 2 shows a vertical section through a sensor arrangement according to a further embodiment of the invention
  • a first insulation layer 4, a second insulation layer 6, a third insulation layer 8 and a fourth insulation layer 10 are formed on a silicon substrate 2.
  • a left and right second electrode structure 14, 15, for example made of a metal are formed at a distance from one another in the lateral direction and extend parallel in the longitudinal direction.
  • Heating conductor structures 7, 11 are provided laterally outside the second electrode structures.
  • a left and a right first electrode structure 12, 13 are formed in the fourth insulation layer 10 via the third insulation layer 8.
  • a recess 9 is provided in the third and fourth insulation layers, which partially exposes the electrode structures 12, 13, 14, 15.
  • a gas-sensitive layer 16 made of, for example, a metal oxide covers this cutout and part of the surface of the fourth insulation layer 10, as a result of which all the electrode structures are covered with respect to the exterior.
  • the layers 11 to 16 extend parallel to one another in the longitudinal direction. Due to the symmetrical arrangement of the heating conductor structures 7 and 11, uniform heating of the central area with electrodes and gas-sensitive layer is achieved.
  • a space 18 is formed in the substrate 2 for thermal decoupling, so that the central region forms a membrane 17.
  • a vertical distance d between the first electrode structures 12, 13 and second electrode structures 14, 15 is, for example, 2 nm to 10 ⁇ , for example approximately 1,500 nm, or a few nm in the case of nanostructured gas-sensitive layer 16.
  • FIG. 2 shows a further embodiment, in which thermistor structures 7, 11, which are covered by the second insulation layer 6, are applied to the first insulation layer 4 laterally on the outside left and right. Between Four parallel second electrode structures 14, 24, 26, 15 are applied to the heating conductor structures 7, 1 i on the first insulation layer 4 and are each covered on their upper side by the second insulation layer 6. Four parallel first electrode structures 12, 20, 22, 13 are applied to the second insulation layer 6 each above a second electrode structure. In the second insulation layer 6, a recess 33 is formed in each of the second insulation layer 6 between two adjacent second electrode structures and filled with the gas-sensitive layer 16, so that each first and second electrode structure adjoins the gas-sensitive layer 16.
  • FIG. 3 is modified compared to the embodiment of FIG. 2 in that a second electrode structure 28 extending in the lateral direction below the four first electrode structures is provided in the second insulation layer 6.
  • an upper insulation layer 10 is applied to the second insulation layer 6, in which laterally heating conductor structures 31 and 32 are formed above the heating conductor structures 7, 11.
  • the upper insulation layer 10 adjoins the laterally outer first electrode structures 12 and 13, all first and second electrode structures adjoining the gas-sensitive layer 16.
  • a third electrode 30 is provided in the first insulation layer 4, which extends in the lateral direction over at least the first and second electrode structures and does not adjoin the gas-sensitive layer 16.
  • the sensor arrangements shown in the figures can be evaluated resistively by means of a constant voltage source or by means of an alternating voltage source by capacitive measurement or measurement of the impedance.
  • a voltage can be applied between the first and the second electrode structures, between them in the vertical direction only a small distance d is formed, so that only a few or only a single crystallite of the material of the gas-sensitive layer 16 is arranged between the electrodes.
  • the surface of the transition between the first and second electrode structures is higher than in the embodiment of FIG. 1, so that a larger signal can be obtained.
  • a lateral measurement of the ohmic resistance, the capacitance and / or impedance between the laterally spaced first electrode structures and / or between the laterally spaced second electrode structures is possible.
  • a measurement is carried out directly between the first electrode structures 12 and 13; in the embodiments of FIGS. 2 to 4, resistive four-point measurements can be carried out between the four laterally spaced electrode structures, in which a voltage between the laterally outer electrode structures 12 and 13 or 14 and 15 applied and the voltage drop across the middle electrode structures 20 and 22 or 24 and 26 is measured.
  • the third electrode layer or electrode structure 30 shown in the embodiment in FIG. 4 can accordingly also be provided in the embodiments in FIGS. 1 to 3.
  • an electrical field can be coupled into the gas-sensitive layer 16, whereby the sensor effects in resistive, capacitive measurement or impedance measurement in vertical or lateral measurement are targeted can be influenced.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Measuring Oxygen Concentration In Cells (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

Dispositif capteur destiné à la mesure d'une concentration de gaz, en particulier de CO, de H2, de NOx et / ou d'hydrocarbures. L'objet de la présente invention est de permettre une mesure précise, à l'aide d'un dispositif capteur à structure relativement simple, en particulier peu coûteuse. A cet effet, ledit dispositif capteur comporte un matériau d'isolation déposé sur un substrat (2) et possédant une ou plusieurs couches d'isolation (4, 6, 8, 10), au moins une première structure d'électrode (12, 13) placée dans le matériau d'isolation ou sur ce dernier, au moins une seconde structure d'électrode (14, 15) placée dans le matériau d'isolation ou sur ce dernier et se trouvant à une certaine distance de la première structure d'électrode dans le sens vertical, une couche sensible (16) aux gaz adjacente à la première structure d'électrode (12, 13) et à la seconde structure d'électrode (14, 15) et une structure de conducteurs chauffants (7) placée dans le matériau d'isolation (4, 6, 8, 10).
EP02779214A 2002-05-11 2002-11-14 Dispositif capteur destine a la mesure d'une concentration de gaz Withdrawn EP1504253A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10221084 2002-05-11
DE10221084A DE10221084A1 (de) 2002-05-11 2002-05-11 Sensoranordnung zum Messen einer Gaskonzentration
PCT/DE2002/004207 WO2003095999A2 (fr) 2002-05-11 2002-11-14 Dispositif capteur destine a la mesure d'une concentration de gaz

Publications (1)

Publication Number Publication Date
EP1504253A2 true EP1504253A2 (fr) 2005-02-09

Family

ID=29265242

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02779214A Withdrawn EP1504253A2 (fr) 2002-05-11 2002-11-14 Dispositif capteur destine a la mesure d'une concentration de gaz

Country Status (4)

Country Link
US (1) US20050199041A1 (fr)
EP (1) EP1504253A2 (fr)
DE (1) DE10221084A1 (fr)
WO (1) WO2003095999A2 (fr)

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WO2005012893A1 (fr) * 2003-07-25 2005-02-10 Paragon Ag Capteur chimique micro-structure
DE10353860B4 (de) * 2003-11-18 2023-03-30 Robert Bosch Gmbh Sensor zum Erfassen von Partikeln in einem Gasstrom, sowie Verfahren zu seiner Herstellung
GB0500393D0 (en) * 2005-01-10 2005-02-16 Univ Warwick Microheaters
BRPI0716764A2 (pt) * 2006-09-14 2013-09-17 Agency Science Tech & Res sensor eletroquÍmico com microeletrodos interdigitados e polÍmero condutor
US20180080891A1 (en) * 2016-09-21 2018-03-22 General Electric Company Systems and methods for environment sensing
US20080154432A1 (en) * 2006-12-20 2008-06-26 Galloway Douglas B Catalytic alloy hydrogen sensor apparatus and process
US20080154434A1 (en) * 2006-12-20 2008-06-26 Galloway Douglas B Catalytic Alloy Hydrogen Sensor Apparatus and Process
KR20090064693A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 마이크로 가스 센서 및 그 제작 방법
KR101094870B1 (ko) * 2008-12-17 2011-12-15 한국전자통신연구원 습도 센서 및 이의 제조 방법
JP5055349B2 (ja) * 2009-12-28 2012-10-24 日立オートモティブシステムズ株式会社 熱式ガスセンサ
US8410560B2 (en) * 2010-01-21 2013-04-02 Cambridge Cmos Sensors Ltd. Electromigration reduction in micro-hotplates
EP2762865A1 (fr) * 2013-01-31 2014-08-06 Sensirion Holding AG Capteur chimique et procédé de fabrication d'un tel capteur chimique
EP2833128A1 (fr) * 2013-07-30 2015-02-04 Sensirion AG Capteur chimique d'oxyde métallique intégré
KR101649586B1 (ko) * 2014-04-07 2016-08-19 주식회사 모다이노칩 센서
US10578572B2 (en) * 2016-01-19 2020-03-03 Invensense, Inc. CMOS integrated microheater for a gas sensor device
US10383967B2 (en) 2016-11-30 2019-08-20 Invensense, Inc. Substance sensing with tracers
TWI626627B (zh) * 2017-08-31 2018-06-11 研能科技股份有限公司 致動傳感模組
US11674916B2 (en) 2018-11-12 2023-06-13 Sciosense B.V. Gas sensor
US20200150069A1 (en) * 2018-11-12 2020-05-14 Ams Sensors Uk Limited Gas sensor
US11813926B2 (en) 2020-08-20 2023-11-14 Denso International America, Inc. Binding agent and olfaction sensor
US12377711B2 (en) 2020-08-20 2025-08-05 Denso International America, Inc. Vehicle feature control systems and methods based on smoking
US11760169B2 (en) 2020-08-20 2023-09-19 Denso International America, Inc. Particulate control systems and methods for olfaction sensors
US11760170B2 (en) 2020-08-20 2023-09-19 Denso International America, Inc. Olfaction sensor preservation systems and methods
US12251991B2 (en) 2020-08-20 2025-03-18 Denso International America, Inc. Humidity control for olfaction sensors
US12017506B2 (en) 2020-08-20 2024-06-25 Denso International America, Inc. Passenger cabin air control systems and methods
US11881093B2 (en) 2020-08-20 2024-01-23 Denso International America, Inc. Systems and methods for identifying smoking in vehicles
US11636870B2 (en) 2020-08-20 2023-04-25 Denso International America, Inc. Smoking cessation systems and methods
US11828210B2 (en) 2020-08-20 2023-11-28 Denso International America, Inc. Diagnostic systems and methods of vehicles using olfaction
US11932080B2 (en) 2020-08-20 2024-03-19 Denso International America, Inc. Diagnostic and recirculation control systems and methods
US12269315B2 (en) 2020-08-20 2025-04-08 Denso International America, Inc. Systems and methods for measuring and managing odor brought into rental vehicles
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Also Published As

Publication number Publication date
DE10221084A1 (de) 2003-11-20
WO2003095999A2 (fr) 2003-11-20
WO2003095999A3 (fr) 2004-03-04
US20050199041A1 (en) 2005-09-15

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