[go: up one dir, main page]

EP1549586A1 - Composant micromecanique et procede correspondant - Google Patents

Composant micromecanique et procede correspondant

Info

Publication number
EP1549586A1
EP1549586A1 EP03718615A EP03718615A EP1549586A1 EP 1549586 A1 EP1549586 A1 EP 1549586A1 EP 03718615 A EP03718615 A EP 03718615A EP 03718615 A EP03718615 A EP 03718615A EP 1549586 A1 EP1549586 A1 EP 1549586A1
Authority
EP
European Patent Office
Prior art keywords
substrate
porous silicon
cavity
component according
micromechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03718615A
Other languages
German (de)
English (en)
Inventor
Gerhard Lammel
Simon Armbruster
Frank Schaefer
Hubert Benzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1549586A1 publication Critical patent/EP1549586A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon

Definitions

  • the invention is based on a micromechanical component and a method according to the category of the independent claims.
  • Getter materials made of porous metals are generally known which are used to bind gases in closed systems.
  • a low pressure is intended to be enclosed in such a closed system, such as a cavity, which pressure comes close to the vacuum.
  • the enclosed gases can be bound with getten text materials and thus the pressure can be greatly reduced.
  • a disadvantage of the known getter materials is that the manufacturing process of such getter materials is not suitable for use in a semiconductor manufacturing process.
  • Another disadvantage of the known getter materials is that they are not suitable for semiconductors.
  • the micromechanical component and the method with the features of the independent claims have the advantage over the fact that the gette ⁇ naterial is made of porous silicon.
  • This porous silicon can be easily integrated into an existing semiconductor process.
  • porous silicon is also very suitable for semiconductors.
  • the porous silicon is provided as an inexpensive getter material.
  • porous silicon binds oxygen (02) through the formation of silicon dioxide even at low temperatures. As a result, it is not necessary to activate getter material in the form of porous silicon to heat the component to high temperatures, such as in a high temperature annealing process.
  • porous silicon can be easily integrated into semiconductor processes such as CMOS, BCD and the like, and the porous silicon can be used as getter material, for example when encapsulating sensors, in order to minimize the enclosed pressure.
  • the use of porous silicon advantageously provides, according to the invention, for producing a large surface area, in particular up to over 1000 m 2 per cm 3 , as a result of which a high getter effectiveness can be achieved.
  • first and the second substrate are hermetically sealed to one another at the intermediate layer.
  • a first substrate and a membrane are provided, the cavity between the membrane and the first substrate being provided and the region of the porous silicon being provided in the first substrate.
  • FIG. 1 shows a schematic diagram of the micromechanical component according to the invention
  • FIG. 2 shows a first embodiment of the micromechanical component
  • FIG. 3 shows a second embodiment of the micromechanical component according to the invention
  • FIG. 4 shows a third embodiment of the micromechanical device according to the invention
  • FIG. 5 shows a fourth embodiment of the micromechanical component according to the invention.
  • a cavity with an enclosed valve is often required.
  • the cavity is shown in all figures with the reference number 10.
  • Such cavities or volumes 10 can be produced in various ways. For example, a recess can be created by etching.
  • a second substrate 30 is bonded to such a wet-pretreated first substrate 20, various methods such as, in particular, sealing glass bonding,
  • Direct bonding or anodic bonding can be used. Furthermore, it is also provided according to the invention to glue or solder the first substrate 20 to the second substrate 30. These connection processes are mostly carried out in a vacuum. This is because a valcuum is to prevail in the cavity 10 after the cavity 10 has been hermetically sealed. Often, however, it is disadvantageously associated with the connection processes that they themselves are associated with a gas development that is based on the principle, so that the internal pressure of the cavity 10 cannot be made arbitrary. Before the cavity 10 is closed, a getter material is therefore introduced according to the invention into the volume 10 to be closed or adjacent to it, the getter material causing the emerging gases are bound and the pressure in the cavity 10 can be reduced.
  • porous silicon is provided as the getter material.
  • This porous silicon is shown in all figures by means of a region of porous silicon, which is designated by the reference number 11.
  • Such low temperatures can easily be integrated into semiconductor processes.
  • the activation of the porous silicon as getter material is also possible after the production of semiconductor components, whereby it must be taken into account that finished semiconductor components generally have a lower temperature resistance than the pure semiconductor material that was used for their production.
  • oxygen can be bound to the very large surface of the porous silicon 11.
  • Porous silicon dioxide is then formed from the gaseous oxygen and the porous silicon.
  • a particularly advantageous field of application of the method and the micromechanical component according to the invention is to use the porous silicon as an oxygen getter, for example in anodic bonding, the anodic bonding denoting a connection of silicon, in particular silicon wafers, by means of mostly sodium-containing glass.
  • oxygen is generated at the connecting surface, which diffuses into cavities and in particular into the cavity 10 and can be bound in the cavity 10 by getten materials, such as in particular the porous silicon 11 according to the invention, in order to keep the pressure in the cavity 10 or in as low as possible to produce the cavern 10.
  • the anodic bonding is exemplified according to the invention, for example at an elevated temperature
  • the gettering effect of the porous silicon or the area of the porous silicon 11 can be increased.
  • oxygen is generated, which can be bound, with which the internal pressure in the cavity 10 or in the cavern 10 can be at least partially reduced.
  • Gases other than oxygen, which are also generated during seal glass bonding, can also be adsorbed on the very large surface of the porous silicon and thus also reduce the pressure.
  • the porous silicon can also advantageously be used as a getter material in silicone fusion bonding as a connection process, high temperatures of about 1000 ° C. being reached in this process, but the porous silicon is not destroyed.
  • FIG. 1 shows a schematic diagram of the micromechanical component according to the invention.
  • a closed volume which is also referred to as cavity 10
  • the micromechanical component according to the invention having a first substrate 20 and a second substrate 30, the first substrate 20 being connected to the second substrate 30 and between the substrates 20, 30 an intermediate layer 25 is provided.
  • the first substrate 20 is provided in particular as a silicon substrate and the second substrate 30 is also provided in particular as a silicon substrate.
  • the area of the porous silicon 11 in the second substrate 30 is provided in the schematic diagram in FIG.
  • the region 11 of porous silicon can be produced particularly simply by means of an etching process in the silicon material of the second substrate 30.
  • the intermediate layer 25 being provided, for example, as a seal glass.
  • FIG. 2 shows a first embodiment of the micromechanical device according to the invention
  • the component has the first substrate 20, which has a micromechanical structure 200.
  • a sacrificial layer 21, for example in the form of a sacrificial oxide 21, is provided in particular in the first substrate 20.
  • a functional layer 22 is provided in the first substrate 20 for producing the micromechanical structure 200, which is represented in particular by means of an epipoly silicon layer.
  • the micromechanical structure 200 comprises, for example, oscillator structures.
  • the second substrate 30 is shown in FIG. 2, which comprises the region 11 of porous silicon.
  • a connection layer 26 forms the cavity 10 through the structuring of the substrates 20, 30.
  • the area of porous silicon 11 which adjoins the cavity 10 is provided in the second substrate 30.
  • the micro-mechanical structure 200 in particular represents an acceleration or rotation rate sensor.
  • the connection layer 26 comprises in particular seal glass.
  • FIG. 3 shows a second embodiment of the milcromechanical component according to the invention.
  • the first substrate 20 is shown in the upper region of FIG. 3.
  • the first substrate 20 is also referred to as a sensor substrate.
  • the micromechanical structure 200 is produced in the first substrate or on the first substrate 20, a sacrificial layer 21 and a functional layer 22, in particular made of epipolysilicon, being provided for this purpose again.
  • a composite wafer is provided as the second substrate 30, the composite wafer consisting of the actual second substrate 30 and a further connection layer 27, the further connection layer 27 in particular as a Pyrex glass layer with the actual second substrate 30 connected is.
  • the further connection layer 27 together with the second substrate 30 forms the composite wafer.
  • a region of porous silicon 11 is provided in the composite wafer and a so-called chemical electrode 50 is provided.
  • the shield electrode 50 is particularly necessary to protect the oscillator structures of the functional layer during anodic bonding.
  • the vibrating structures would be pulled up by electrostatic forces and bonded to the substrate 20 when a voltage was applied, which is necessary for the anodic bonding to be carried out later.
  • the shield electrode 50 is partially open, so that at the edge or at locations where no vibrating structures of the milcromechanical structure 200 are provided, a connection between the
  • Cavity 10 and the area of porous silicon 11 is made. This opening of the chemical electrode is designated by the reference number 51 in FIG.
  • the volume 10 to be evacuated or the cavity 10 is thus connected to the region of porous silicon 11.
  • FIG. 4 shows a third embodiment of the micromechanical component according to the invention.
  • the area of porous silicon 11 is created in the first substrate 20 before the sacrificial layer 21 or the functional layer 22 is applied. This results in the sequence of the layers shown in FIG. 4, the first substrate 20 first, then the porous region Silicon 11, then the (etched away) sacrificial layer 21 and then the functional layer 22 follows.
  • the micromechanical structure 200 represents an acceleration sensor or a rotation rate sensor, this being provided in particular in the micropackage teclinology (MPT) shown in the figure ,
  • FIG. 5 shows a fourth filling form of the milcromechanical component according to the invention.
  • the fourth embodiment represents an absolute pressure sensor with porous silicon as getter material for generating a small internal pressure in the cavity 10.
  • the area of porous silicon is again with the reference symbol
  • the component according to the invention comprises a sacrificial layer 21 on the first substrate 20, on which a membrane 60 is provided.
  • the top of the membrane 60 which is shown in FIG. 5 in the figure above, is exposed to the ambient pressure of the pressure sensor, and is in the cavity 10 through which
  • Getter material 11 causes a particularly low internal pressure to prevail. Bending of the membrane 60 as a function of the external pressure conditions is detected by sensor elements (not shown in FIG. 5) in the region of the membrane 60 and converted into electrical signals.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

L'invention se rapporte à un composant micromécanique ainsi qu'à un procédé de production d'un composant micromécanique. Selon l'invention, ce composant micromécanique comprend une cavité (10) et une zone de silicium poreux (11). L'invention est caractérisée en ce que cette zone de silicium poreux (11) sert à abaisser la pression régnant dans ladite cavité (10).
EP03718615A 2002-09-26 2003-03-06 Composant micromecanique et procede correspondant Withdrawn EP1549586A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10244786A DE10244786A1 (de) 2002-09-26 2002-09-26 Mikromechanisches Bauelement und Verfahren
DE10244786 2002-09-26
PCT/DE2003/000703 WO2004028957A1 (fr) 2002-09-26 2003-03-06 Composant micromecanique et procede correspondant

Publications (1)

Publication Number Publication Date
EP1549586A1 true EP1549586A1 (fr) 2005-07-06

Family

ID=31984077

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03718615A Withdrawn EP1549586A1 (fr) 2002-09-26 2003-03-06 Composant micromecanique et procede correspondant

Country Status (5)

Country Link
US (1) US7404332B2 (fr)
EP (1) EP1549586A1 (fr)
JP (1) JP2006500233A (fr)
DE (1) DE10244786A1 (fr)
WO (1) WO2004028957A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009051853A1 (de) 2009-10-27 2011-06-09 Hydac Electronic Gmbh Messzelle zur Infrarot-Analyse von Fluiden, Messsystem mit einer solchen Messzelle und Verfahren zur Herstellung einer solchen Messzelle
FR2976932A1 (fr) * 2011-06-23 2012-12-28 Commissariat Energie Atomique Structure a materiau getter protege hermetiquement lors de sa realisation
US20130049143A1 (en) * 2011-08-26 2013-02-28 Qualcomm Mems Technologies, Inc. Release activated thin film getter
EP2973685B1 (fr) * 2013-03-13 2018-01-17 Robert Bosch GmbH Dispositif de microsystème électromécanique comprenant un piège à gaz

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4331798B4 (de) * 1993-09-18 2004-08-26 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Bauelementen
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
US6323550B1 (en) * 1995-06-06 2001-11-27 Analog Devices, Inc. Package for sealing an integrated circuit die
CN1077283C (zh) * 1996-08-23 2002-01-02 李韫言 一种微细加工的热式流量传感器及其制造方法
US5882496A (en) * 1997-02-27 1999-03-16 The Regents Of The University Of California Porous silicon structures with high surface area/specific pore size
JP2001068780A (ja) * 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ素子およびその製造方法
US6589883B2 (en) * 2000-03-29 2003-07-08 Georgia Tech Research Corporation Enhancement, stabilization and metallization of porous silicon
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
DE10038099A1 (de) * 2000-08-04 2002-02-21 Bosch Gmbh Robert Mikromechanisches Bauelement
DE10055081A1 (de) * 2000-11-07 2002-05-16 Bosch Gmbh Robert Mikrostrukturbauelement
DE10244785A1 (de) * 2002-09-26 2004-04-08 Robert Bosch Gmbh Verfahren und mikromechanisches Bauelement
DE102004043357B4 (de) * 2004-09-08 2015-10-22 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Sensorelements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004028957A1 *

Also Published As

Publication number Publication date
WO2004028957A1 (fr) 2004-04-08
US7404332B2 (en) 2008-07-29
JP2006500233A (ja) 2006-01-05
US20060137460A1 (en) 2006-06-29
DE10244786A1 (de) 2004-04-08

Similar Documents

Publication Publication Date Title
EP2004542B1 (fr) Boîtier micromécanique comportant au moins deux cavités présentant des pressions intérieures et/ou des compositions gazeuses différentes et procédé de fabrication
EP1836123B1 (fr) Procede pour produire une pression interne predeterminee dans une cavite d'un composant a semi-conducteur
DE102013217726A1 (de) Mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung und Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung
EP0721587A1 (fr) Dispositif micromecanique et son procede de fabrication
DE102004027501A1 (de) Mikromechanisches Bauelement mit mehreren Kavernen und Herstellungsverfahren
EP1440322A1 (fr) Microcapteur
DE102007026445A1 (de) Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements
WO2017097468A1 (fr) Procédé de fabrication d'un composant micromécanique
DE102011081033B4 (de) Verfahren zur Herstellung einer mikromechanischen Struktur und mikromechanische Struktur
DE102017200725A1 (de) Mikromechanischer Sensor
DE102010029709B4 (de) Mikromechanisches Bauelement und Verfahren zum Herstellen eines mikromechanischen Bauelements
DE102013209266A1 (de) Bauelement mit einem Hohlraum
WO1997021986A1 (fr) Microdetecteurs a membranes au silicium et leur procede de fabrication
EP1389307A2 (fr) Ensemble capteur, notamment ensemble capteur micromecanique
EP1549586A1 (fr) Composant micromecanique et procede correspondant
DE19603829A1 (de) Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium
DE10257097B4 (de) Verfahren zur Herstellung von mikroelektromechanischen Systemen (Microelectromechanical Systems: MEMS) mittels Silizium-Hochtemperatur-Fusionsbonden
EP1537394A1 (fr) Composant soi a jonctions de separation
DE10324421B4 (de) Halbleiterbauelement mit Metallisierungsfläche und Verfahren zur Herstellung desselben
EP1079431B1 (fr) Procédé d'encapsulation pour composants avec cavités
DE102012209973A1 (de) Mikromechanische Vorrichtung und Verfahren zur Herstellung einer mikromechanischen Vorrichtung
DE102016200489A1 (de) Mikromechanisches Bauelement
DE102017212318A1 (de) Mikromechanische Sensorvorrichtung und entsprechendes Herstellungsverfahren
WO2019219438A1 (fr) Procédé pour fabriquer au moins un ensemble de membrane, ensemble de membrane pour capteur micromécanique et composant
EP3601154B1 (fr) Procédé servant à fabriquer une tranche semi-conductrice au moins en partie encapsulée

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050426

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 20090526

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20141001